KR20080101214A - 에칭 알루미늄 하부기판을 사용하는P(VDF-TrFE) 기반 커패시터 및P(VDF-TrFE)기반 커패시터에서의 고온 안정성향상 방법 - Google Patents
에칭 알루미늄 하부기판을 사용하는P(VDF-TrFE) 기반 커패시터 및P(VDF-TrFE)기반 커패시터에서의 고온 안정성향상 방법 Download PDFInfo
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- KR20080101214A KR20080101214A KR1020070047670A KR20070047670A KR20080101214A KR 20080101214 A KR20080101214 A KR 20080101214A KR 1020070047670 A KR1020070047670 A KR 1020070047670A KR 20070047670 A KR20070047670 A KR 20070047670A KR 20080101214 A KR20080101214 A KR 20080101214A
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- trfe
- vdf
- capacitor
- aluminum
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 115
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 115
- 239000003990 capacitor Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 23
- 230000002708 enhancing effect Effects 0.000 title 1
- 238000000137 annealing Methods 0.000 claims abstract description 45
- 230000010287 polarization Effects 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 230000000737 periodic effect Effects 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims description 31
- 230000008018 melting Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 24
- 230000005684 electric field Effects 0.000 claims description 15
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 6
- 229960003280 cupric chloride Drugs 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 238000002048 anodisation reaction Methods 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 238000010408 sweeping Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 abstract description 16
- 230000005621 ferroelectricity Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920001166 Poly(vinylidene fluoride-co-trifluoroethylene) Polymers 0.000 description 2
- 238000000333 X-ray scattering Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 238000009304 pastoral farming Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000013545 self-assembled monolayer Substances 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229920006125 amorphous polymer Polymers 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001654 grazing-incidence X-ray scattering Methods 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229920006126 semicrystalline polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (6)
- 알루미늄 하부전극, 상기 하부전극 상에 형성되는 P(VDF-TrFE) 강유전성 박막 및 상기 P(VDF-TrFE) 강유전성박막 위에 형성되는 상부전극을 포함하여 이루어지는 커패시터에 있어서, 상기 알루미늄 하부전극으로서 토포그래픽하며 주기적인 나노크기 표면 구조를 갖는 에칭된 알루미늄 하부전극을 사용하는 것을 특징으로 하는 P(VDF-TrFE)기반 커패시터.
- 제 1 항에서, 상기 에칭된 알루미늄 하부전극의 표면은 나노크기의 오목반구형볼(recessed semi-spherical bowl)형상이 주기적으로 나타나는 표면구조를 갖는 것을 특징으로 하는 P(VDF-TrFE)기반 커패시터.
- 제 2 항에서, 상기 에칭된 알루미늄 하부전극은 알루미늄 0.3 M 수산(oxalic acid, C2H2O4) 내에서 순수 알루미늄 기판의 아노다이징(anodization)과, 그 후 제2염화구리(cupric chloride, CuCl2) 용액에서 화학적으로 에칭됨으로써 제조되는 것을 특징으로 하는 P(VDF-TrFE) 기반 커패시터.
- 본 발명은알루미늄 하부전극, 상기 하부전극 상에 형성되는 P(VDF-TrFE) 강유전성 박막 및 상기 P(VDF-TrFE) 강유전성박막 위에 형성되는 상부전극을 포함하 여 이루어지는 커패시터에 있어서, P(VDF-TrFE)의 용융온도 이상의 고온에서의 어닐링 후에도 분극 특성을 유지하기 위한 방법으로서,P(VDF-TrFE)의 용융온도에서 1차 어닐링(anealing) 하는 단계(I);P(VDF-TrFE)의 용융온도 이상에서 2차 어닐링하는 단계(II); 및단계(II) 이후 저전압의 전기장을 가하여 주는 전기분극화(electric poling) 단계(III)를 포함하는 P(VDF-TrFE) 기반 커패시터의 고온 안정성 향상방법.
- 제 4 항에서, 상기 단계(I)의 어닐링 온도가 120 ~ 140℃인 것을 특징으로 하는 P(VDF-TrFE) 기반 커패시터의 고온 안정성 향상방법.
- 제 4 항에서, 상기 단계(III)의 전기분극화(electric poling)는, ±30V 이하의 스위핑전기장을 가하여 주는 것을 특징으로 하는 P(VDF-TrFE) 기반 커패시터의 고온 안정성 향상방법.
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KR1020070047670A KR100873893B1 (ko) | 2007-05-16 | 2007-05-16 | 에칭 알루미늄 하부기판을 사용하는P(VDF-TrFE) 기반 커패시터 및P(VDF-TrFE)기반 커패시터에서의 고온 안정성향상 방법 |
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KR1020070047670A KR100873893B1 (ko) | 2007-05-16 | 2007-05-16 | 에칭 알루미늄 하부기판을 사용하는P(VDF-TrFE) 기반 커패시터 및P(VDF-TrFE)기반 커패시터에서의 고온 안정성향상 방법 |
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KR20080101214A true KR20080101214A (ko) | 2008-11-21 |
KR100873893B1 KR100873893B1 (ko) | 2008-12-15 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104803342A (zh) * | 2014-01-23 | 2015-07-29 | 清华大学 | 碗状金属纳米结构的制备方法 |
CN106863859A (zh) * | 2017-01-04 | 2017-06-20 | 复旦大学 | 一种制备高度取向聚偏二氟‑三氟乙烯共聚物薄膜的方法 |
CN115160610A (zh) * | 2022-06-28 | 2022-10-11 | 之江实验室 | 一种自支撑的取向P(VDF-TrFE)薄膜及其制备方法 |
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US20060289351A1 (en) | 2004-07-02 | 2006-12-28 | The University Of Chicago | Nanostructures synthesized using anodic aluminum oxide |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104803342A (zh) * | 2014-01-23 | 2015-07-29 | 清华大学 | 碗状金属纳米结构的制备方法 |
CN104803342B (zh) * | 2014-01-23 | 2016-08-17 | 清华大学 | 碗状金属纳米结构的制备方法 |
CN106863859A (zh) * | 2017-01-04 | 2017-06-20 | 复旦大学 | 一种制备高度取向聚偏二氟‑三氟乙烯共聚物薄膜的方法 |
CN106863859B (zh) * | 2017-01-04 | 2019-05-31 | 复旦大学 | 一种制备高度取向聚偏二氟-三氟乙烯共聚物薄膜的方法 |
CN115160610A (zh) * | 2022-06-28 | 2022-10-11 | 之江实验室 | 一种自支撑的取向P(VDF-TrFE)薄膜及其制备方法 |
CN115160610B (zh) * | 2022-06-28 | 2024-03-19 | 之江实验室 | 一种自支撑的取向P(VDF-TrFE)薄膜及其制备方法 |
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