KR20080086754A - 은 또는 은 합금 와이어를 이용한 반도체 패키지 - Google Patents

은 또는 은 합금 와이어를 이용한 반도체 패키지 Download PDF

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Publication number
KR20080086754A
KR20080086754A KR1020070028848A KR20070028848A KR20080086754A KR 20080086754 A KR20080086754 A KR 20080086754A KR 1020070028848 A KR1020070028848 A KR 1020070028848A KR 20070028848 A KR20070028848 A KR 20070028848A KR 20080086754 A KR20080086754 A KR 20080086754A
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South Korea
Prior art keywords
silver
wire
pad
semiconductor package
alloy
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KR1020070028848A
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English (en)
Inventor
조종수
문정탁
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엠케이전자 주식회사
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Application filed by 엠케이전자 주식회사 filed Critical 엠케이전자 주식회사
Priority to KR1020070028848A priority Critical patent/KR20080086754A/ko
Priority to US12/051,078 priority patent/US20080230915A1/en
Publication of KR20080086754A publication Critical patent/KR20080086754A/ko

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

귀금속 패드와 우수한 신뢰성을 유지하면서도 비용을 낮출 수 있는 은 또는 은 합금 와이어를 이용한 반도체 패키지가 제공된다. 반도체 패키지는 패키지 기판을 포함한다. 반도체 칩은 패키지 기판 상에 부착되고, 귀금속(noble metal)으로 구성된 하나 또는 그 이상의 패드를 갖는다. 그리고, 하나 또는 그 이상의 와이어는 하나 또는 그 이상의 패드 및 패키지 기판을 전기적으로 연결하도록 본딩되고, 은(Ag) 또는 은 합금(Ag alloy)으로 구성된다.

Description

은 또는 은 합금 와이어를 이용한 반도체 패키지{Semiconductor package using wires consist of Ag or Ag alloy}
도 1은 본 발명의 일 실시예에 따른 반도체 패키지를 보여주는 사시도이고;
도 2는 알루미늄 패드를 이용한 비교예들에 따른 반도체 패키지들의 와이어와 패드 사이의 접합 강도 실험 결과를 보여주는 그래프이고;
도 3은 접합 강도 실험 전의 반도체 패키지를 부분적으로 보여주는 주사전자현미경 사진이고;
도 4 및 도 5는 도 2의 접합 강도 실험 후의 반도체 패키지를 부분적으로 보여주는 주사전자현미경 사진들이고;
도 6은 팔라듐 패드를 이용한 비교예 및 실험예들에 따른 반도체 패키지들의 와이어와 패드 사이의 접합 강도 실험 결과를 보여주는 그래프이고; 그리고
도 7 및 도 8은 도 6의 접합 강도 실험 후의 반도체 패키지를 부분적으로 보여주는 주사전자현미경 사진들이다.
본 발명은 반도체 패키지(semiconductor package)에 관한 것으로서, 특히 은(Ag) 또는 은 합금(Ag alloy) 와이어를 이용한 반도체 패키지에 관한 것입니다.
통상적인 반도체 패키지에 있어서, 반도체 칩의 패드는 알루미늄으로 구성된다. 패키지 기판과 알루미늄 패드는 금 와이어를 이용하여 본딩된다. 금은 높은 화학적 안정성과 높은 전기 전도도 때문에 본딩용 와이어로서 널리 사용되어 왔다. 하지만, 반도체 산업계에서의 지속적인 제조 비용의 감소 요구에 부응하고, 최근 금값의 상승으로 인한 비용 증대 문제를 해결하기 위해, 금을 대체할 새로운 와이어가 요구되고 있다.
예를 들어, 금-은 합금 와이어가 이용되고 있지만, 여전히 금의 조성이 높아서 비용 감소에 한계가 있고, 신뢰성에 문제가 있다. 금-은 합금 와이어에 대한 연구의 예로는, 일본특허출원 공개번호 1998-326803호, 1999-67811호, 1999-67812호, 2000-150562호 등이 있다.
또한, 최근 반도체 칩의 속도를 높이기 위해서 배선 금속으로 사용되는 알루미늄은 구리로 대체되고 있다. 따라서, 패드를 구성하는 물질이 알루미늄에서 구리 또는 다른 귀금속으로 대체될 수 있다. 이에 따라, 구리를 포함하는 귀금속과 좋은 접합 강도를 유지할 수 있는 와이어가 필요해졌다.
본 발명이 이루고자하는 기술적 과제는 귀금속 패드와 우수한 신뢰성을 유지하면서도 비용을 낮출 수 있는 와이어를 이용한 반도체 패키지를 제공하는 것이다.
상기 기술적 과제를 달성하기 위한 본 발명에 따른 반도체 패키지는 패키지 기판을 포함한다. 반도체 칩은 상기 패키지 기판 상에 부착되고, 귀금속(noble metal)으로 구성된 하나 또는 그 이상의 패드를 갖는다. 그리고, 하나 또는 그 이상의 와이어는 상기 하나 또는 그 이상의 패드 및 상기 패키지 기판을 전기적으로 연결하도록 본딩되고, 은(Ag) 또는 은 합금(Ag alloy)으로 구성된다.
상기 본 발명의 일 예에 있어서, 상기 하나 또는 그 이상의 패드는 팔라듐(Pd), 백금(Pt), 금(Au), 니켈(Ni) 및 구리(Cu)의 군에서 선택된 하나 또는 이들의 합금으로 구성될 수 있다.
상기 본 발명의 다른 예에 있어서, 상기 하나 또는 그 이상의 와이어는 95 중량% 이상의 은을 함유할 수 있고, 나아가 5 중량% 이하의 팔라듐(Pd)을 더 함유할 수 있다.
본 발명에 있어서, 중량%는 와이어의 총 중량에 대한 합금 성분 또는 첨가 성분의 무게 비를 %로 나타낸 것이다.
이하, 첨부한 도면을 참조하여 본 발명에 따른 바람직한 실시예를 설명함으로써 본 발명을 상세하게 설명한다. 그러나 본 발명은 이하에서 개시되는 실시예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 것이며, 단지 본 실시예는 본 발명의 개시가 완전하도록 하며, 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이다.
도 1은 본 발명의 일 실시예에 따른 반도체 패키지(100)를 보여주는 사시도이다.
도 1을 참조하면, 패키지 기판(105)은 하나 또는 그 이상의 리드(140)를 포 함할 수 있다. 예를 들어, 패키지 기판(105)은 리드 프레임으로 제공될 수 있다. 리드(140)는 전자 제품(미도시)과 반도체 패키지(100)의 전기적인 연결을 위해서 제공될 수 있다. 리드(140)의 배치는 예시적으로 도시되었고, 반도체 패키지(100)의 종류에 따라서 다양하게 변형될 수 있다.
다른 실시예에서, 패키지 기판(105)은 인쇄회로기판으로 제공될 수 있고, 이 경우 리드(140) 대신에 솔더볼 또는 범프(미도시)가 전자 제품과 반도체 패키지(100)의 전기적인 연결을 위하여 이용될 수 있다.
반도체 칩(110)은 패키지 기판(105) 상에 부착될 수 있다. 예를 들어, 반도체 칩(110)은 메모리 소자 또는 로직 소자를 포함할 수 있지만, 본 발명의 범위는 이러한 예에 제한되지 않는다. 반도체 칩(110)은 하나 또는 그 이상의 패드(120)를 포함할 수 있다.
패드(120)는 반도체 칩(110)의 외부 터미널로 기능할 수 있다. 패드(120)는 반도체 칩(110)의 가장자리에 배치될 수 있다. 하지만, 패드(120)의 배치는 반도체 패키지(100)에 따라서 변형될 수 있고, 따라서 반도체 칩(110)의 가운데 부근에 배치될 수도 있다. 패드(120)의 수는 예시적으로 도시되었고, 본 발명의 범위는 이러한 예에 제한되지 않는다.
패드(120)는 통상적인 알루미늄 대신에 귀금속(noble metal)으로 구성될 수 있다. 본 발명의 실시예들에 있어서, 귀금속은 화학적으로 안정한, 즉 쉽게 산화되지 않고 잘 부식되지 않는 금속을 지칭할 수 있다. 예를 들어, 패드(120)는 팔라듐(Pd), 백금(Pt), 금(Au), 니켈(Ni) 및 구리(Cu)의 군에서 선택된 하나 또는 이들 의 합금으로 구성될 수 있다. 하지만, 이러한 패드(120)에 제조 공정 상의 불가피한 불순물들이 포함되는 것을 제외하는 것은 아니다.
패드(120) 및 패키지 기판(105)은 하나 또는 그 이상의 와이어(130)에 의해서 전기적으로 연결될 수 있다. 예를 들어, 와이어(130)는 본딩 기술을 이용하여 패드(120) 및 리드(140)에 연결될 수 있다. 와이어(130)는 볼(ball) 부분(132)과 네크(neck) 부분(134)을 포함할 수 있다.
와이어(130)는 통상적인 금(Au) 대신에 은(Ag) 또는 은(Ag)을 주성분으로 하는 은 합금(Ag alloy)으로 구성될 수 있다. 은(Ag)은 금속 가운데서도 전기 전도도가 가장 높고, 예컨대 금(Au) 보다도 30% 이상 높은 전기 전도도를 갖는다. 또한, 은(Ag)은 금(Au)에 비해서 가격이 싸므로 와이어(130)의 재료비 절감에 기여할 수 있다.
예를 들어, 은(Ag)은 금(Au)에 비해서 1/30 내지 1/50의 비용으로 구매할 수 있다. 또한, 은(Ag)은 금(Au)과 유사한 기계적 특성을 갖고 있으므로, 종래 금 와이어 본딩 공정이 은 와이어 본딩에도 그대로 적용될 수 있다.
이 실시예에서, 은 합금은 높은 전기 전도도를 유지하고 가격 절감 효과를 높이기 위해서, 95 중량% 이상의 은(Ag)을 함유할 수 있다. 나아가, 은 합금은 가공성 향상을 위해서 5 중량% 이하의 팔라듐(Pd)을 더 포함할 수 있다. 또한, 합금 원소로 팔라듐(Pd) 외에 다른 귀금속이 5 중량% 이하로 첨가될 수도 있다.
은(Ag) 또는 은 합금으로 구성된 와이어(130)는 귀금속으로 구성된 패드(120)와 우수한 접합 강도를 유지할 수 있다. 왜냐하면, 귀금속과 은(Ag) 또는 은 합금 사이에 갈바닉(galvanic) 부식이 일어날 가능성이 낮기 때문이다. 따라서, 반도체 패키지(100)의 고습 신뢰성이 높아질 수 있다.
반도체 패키지(100)는 반도체 칩(110) 및 와이어(130)를 둘러싸는 몰딩재(미도시)를 더 포함할 수 있다. 예를 들어, 몰딩재는 에폭시 몰딩 컴파운드(epoxy molding compound; EMC)를 포함할 수 있다.
이 실시예에 따른 반도체 패키지(100)는 은(Ag) 또는 은 합금으로 구성된 와이어(130)를 이용하여 제조 비용을 크게 낮출 수 있고, 나아가 귀금속으로 구성된 패드(120)를 이용하여 높은 신뢰성을 유지할 수 있다.
이하에서는 비교예들 및 실험예들에 따른 반도체 패키지들의 접합 강도를 비교한 결과를 설명한다. 접합 강도는 고습 신뢰성 시험 방법의 하나로, 압력솥 시험(pressure cooker test; PCT)을 이용하였다. 비교예들은 통상적인 알루미늄으로 구성된 패드 또는 금으로 구성된 와이어를 이용한 반도체 패키지들을 나타낸다. 실험예들은 귀금속으로 구성된 패드 및 은 또는 은 합금으로 구성된 와이어를 이용한 반도체 패키지를 나타낸다.
도 2는 알루미늄 패드를 이용한 비교예들에 따른 반도체 패키지들의 와이어와 패드 사이의 접합 강도 실험 결과를 보여주는 그래프이다. 도 3은 접합 강도 실험 전의 반도체 패키지를 부분적으로 보여주는 주사전자현미경 사진이고, 도 4 및 도 5는 도 2의 접합 강도 실험 후의 반도체 패키지를 부분적으로 보여주는 주사전자현미경 사진들이다. 비교예 1-3에서, 패드는 모두 알루미늄(Al)으로 구성되고 와이어는 금(Au), 은(Ag) 및 은-팔라듐(Ag-Pd) 합금으로 각각 구성된다.
도 2를 참조하면, 비교예 1에서 금 와이어 및 알루미늄 패드는 96 시간까지 높은 접합 강도를 유지하였다. 비교예 2에서, 은 와이어 및 알루미늄 패드는 24 시간 이내에 접합 강도를 나타내는 BPT 값이 0 g까지 감소하였다. 비교예 3에서, 은-팔라듐 합금 와이어 및 알루미늄 패드는 48 시간에 BPT값이 0 g까지 감소하였다. 따라서, 알루미늄 패드와 금 와이어는 접합 강도 측면에서 높은 신뢰성을 유지하였으나, 알루미늄 패드와 은 또는 은 합금 와이어는 접합 강도 측면에서 신뢰성이 매우 나쁘다는 것을 알 수 있다.
도 3을 참조하면, 접합 강도 시험 전에 와이어(130)는 패드(120)에 안정적으로 본딩된 것을 알 수 있다. 볼 부분(132)은 패드(120)와 직접 부착되고, 네크 부분(132)은 볼 부분(132)으로부터 신장한다. 이 경우, 와이어(130)는 비교예 1-3의 어느 하나를 대표하여 나타낸다.
도 4를 참조하면, 비교예 1의 경우, 접합 강도 시험에서, 와이어(130a)의 네크 부분(134)에서 파괴가 일어난 것을 알 수 있다. 와이어(130a)의 파괴 시까지, 볼 부분(132)은 패드(120)와 접착력을 유지하고 있는 것을 알 수 있다.
도 5를 참조하면, 비교예 2 및 3의 경우, 접합 강도 시험에서 와이어는 패드(120)로부터 탈착되었다. 즉, 네크 부분의 파괴 전에, 볼 부분이 패드(120)로부터 탈착된 것을 알 수 있다. 이러한 결과는, 패드(120)와 와이어 사이의 계면에서 갈바닉 부식(galvanic corrosion)이 일어났기 때문으로 해석된다. 따라서, 은 또는 은 합금 와이어는 알루미늄 패드와의 본딩에 이용되기 어렵다는 것을 알 수 있다.
도 6은 팔라듐 패드를 이용한 비교예 및 실험예들에 따른 반도체 패키지들의 와이어와 패드 사이의 접합 강도 실험 결과를 보여주는 그래프이다. 도 7 및 도 8은 도 6의 접합 강도 실험 후의 반도체 패키지를 부분적으로 보여주는 주사전자현미경 사진들이다. 비교예 4 및 실험예 1-2에서 패드는 모두 팔라듐으로 구성된다. 비교예 4에서 와이어는 금으로 구성되고, 실험예 1에서 와이어는 은(Ag)으로 구성되고, 실험예 2에서 와이어는 은-팔라듐 합금으로 구성된다.
도 6을 참조하면, 비교예 4, 실험예 1 및 실험예 2는 모두 비교적 우수한 접합 강도를 나타내었다. 96시간의 PCT 후, 접합 강도를 나타내는 BPT값은 비교예 4의 경우 약 7% 감소되고, 실험예 1의 경우 약 6% 감소되고, 실험예 2의 경우 약 13% 감소되었다. 이러한 실험예 1 및 2의 결과는 전술한 비교예 2 및 3의 결과와 크게 대비될 수 있다. 따라서, 은(Ag) 또는 은-팔라듐 합금 와이어는 팔라듐 패드와 우수한 접착 강도를 갖는 것을 알 수 있다.
도 7을 참조하면, 비교예 4의 경우, 접합 강도 시험에서 와이어(130b)의 네크 부분(134)에서 파괴가 일어난 것을 알 수 있다. 와이어(130b)의 파괴 시까지, 볼 부분(132)은 패드(120)와 접착력을 유지하고 있는 것을 알 수 있다.
도 8을 참조하면, 실험예 1 및 2의 경우, 접합 강도 시험에서 와이어(130c)의 네크 부분(134)에서 파괴가 일어난 것을 알 수 있다. 와이어(130c)가 파괴될 때까지, 볼 부분(132)은 패드(120)와 접착력을 유지하고 있다는 것을 알 수 있다.
전술한 실험예 1 및 2에서, 패드(120)는 팔라듐을 예로 하였으나, 다른 귀금속, 예컨대 백금(Pt), 금(Au), 니켈(Ni) 또는 구리(Cu)에도 동일한 결과를 얻을 수 있다.
발명의 특정 실시예들에 대한 이상의 설명은 예시 및 설명을 목적으로 제공되었다. 본 발명은 상기 실시예들에 한정되지 않으며, 본 발명의 기술적 사상 내에서 해당 분야에서 통상의 지식을 가진 자에 의하여 상기 실시예들을 조합하여 실시하는 등 여러 가지 많은 수정 및 변경이 가능함은 명백하다.
본 발명에 따른 반도체 패키지는 종래의 금 와이어 대신에 은 또는 은 합금 와이어를 이용하여 제조 비용을 절약하고 전기 전도도를 낮출 수 있다.
또한, 본 발명에 따른 반도체 패키지는 귀금속 패드를 이용하여 은 또는 은 합금 와이어와 높은 접합 강도를 얻을 수 있고, 따라서 높은 신뢰도를 가질 수 있다.

Claims (4)

  1. 패키지 기판;
    상기 패키지 기판 상에 부착되고, 귀금속(noble metal)으로 구성된 하나 또는 그 이상의 패드를 갖는 반도체 칩;
    상기 하나 또는 그 이상의 패드 및 상기 패키지 기판을 전기적으로 연결하도록 본딩되고, 은(Ag) 또는 은 합금으로 구성된 하나 또는 그 이상의 와이어를 포함하는 것을 특징으로 하는 반도체 패키지.
  2. 제 1 항에 있어서, 상기 하나 또는 그 이상의 패드는 팔라듐(Pd), 백금(Pt), 금(Au), 니켈(Ni) 및 구리(Cu)의 군에서 선택된 하나 또는 이들의 합금으로 구성된 것을 특징으로 하는 반도체 패키지.
  3. 제 1 항에 있어서, 상기 하나 또는 그 이상의 와이어는 95 중량% 이상의 은을 함유하는 것을 특징으로 하는 반도체 패키지.
  4. 제 3 항에 있어서, 상기 하나 또는 그 이상의 와이어는 5 중량% 이하의 팔라듐(Pd)을 더 함유하는 것을 특징으로 하는 반도체 패키지.
KR1020070028848A 2007-03-23 2007-03-23 은 또는 은 합금 와이어를 이용한 반도체 패키지 KR20080086754A (ko)

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