KR20080084140A - Apparatus for vacuum treatment and the vacuum-treating method for pluverulent body using it - Google Patents

Abstract

A vacuum treatment apparatus is provided to form a thin film having high adhesion and compact structure on the powder by allowing a high density metal, oxide or nitride thin film to be deposited along the entire surface of a powder through a physical deposition process, and a vacuum treatment method of powder using the vacuum treatment apparatus is provided. A vacuum treatment apparatus(100) comprises: a rotary part(20) in which a powder(S) is received, which is driven to rotate, and which has at least one projecting part(21) formed on an inner periphery thereof; a chamber(10) in which the rotary part is received, and which can form vacuum; and at least one treatment source(40) disposed on an inner side of the rotary part to perform a vacuum treatment toward the powder. The vacuum treatment apparatus further comprises at least two drive parts(30) symmetrically installed with respect to a load direction of the rotary part and rotated in a state that the drive parts are contacted with an outer periphery of the rotary part so as to drive the rotary part by transmitting driving force to the rotary part. The chamber as a vacuum chamber is in communication with a vacuum exhaust system(V) and a gas supply source(G).

Description

Apparatus for vacuum treatment and the vacuum-treating method for pluverulent body using it}

1 is a schematic cross-sectional view of a vacuum processing apparatus according to an embodiment of the present invention;

2 is a schematic side cross-sectional view of FIG.

3 is an enlarged view of a portion “A” of FIG. 1;

4 is a view showing another example of FIG.

5a to 6b are partial views showing the flow of the powder during the rotation of the vacuum processing apparatus according to the embodiment of the present invention.

<Explanation of symbols for main parts of the drawings>

10 chambers, 20 rotating vessels,

40 ... evaporation source, 100 ... sputtering device.

The present invention relates to a vacuum treatment apparatus and a vacuum treatment method for powders using the same, and more particularly, to a vacuum treatment apparatus for performing surface treatment, vacuum deposition, etc. on the powder and a vacuum treatment method for powders using the same. will be.

In recent years, the vacuum treatment technology, such as to give a new function to the material by coating other materials on the surface of the material has been in the spotlight, and its application is gradually widening.

Among them, powder is a form in which a large number of particles are gathered, and thus the free surface is wider than that of a general bulk, and thus, an attempt has been made to apply it to various industrial fields by performing vacuum treatment such as vapor deposition on the surface of the powder. .

Examples of applications in the industrial field by depositing other materials on powder surfaces include solar cells, anisotropic conductive films, phosphor particles, space industries, catalysts, etc. In addition, food and refined forms, including powdered milk, salt or cereals, It can be widely used for digestion mechanism or dissolution control or function attachment of capsule or cyclic drug.

In general, there are two main methods for coating other materials on the surface of the material, including powder. First, there is a chemical method, which is further subdivided into chemical vapor deposition method and sol-gel method. Among them, chemical vapor deposition is a method of coating a metal, an organic substance, an oxide, or a nitride on the surface of a material by supplying a reaction gas into a high temperature chamber, adsorbing and diffusing the surface of the material. The chemical vapor deposition method has the advantage that the reaction gas can penetrate all parts of the material evenly and can produce metals, organic substances, oxides, or nitrides by chemical reaction, so that the inside of the composite or powder can be coated. There is this.

Secondly, there are physical methods, and when subdivided again, there are an evaporation method for heating and evaporating a material to be coated and a sputtering method for coating a base material by impacting the coating material with a plasma or ion beam. The coating of this physical method has the advantage that the particles with higher energy reach the surface of the material compared to the chemical method, and thus the adhesion of the thin film coated by the chemical method is excellent and the structure of the deposited thin film can be densified. have.

However, the above-described physical method is not suitable for uniformly coating a material such as a powder having a lot of free surfaces in contact with each other since the coating material is supplied only in the direction of the base material to be coated on the target or heating boat. There is this.

It is also unsuitable for uniformly surface-treating materials such as powder for the same reason, and also suffers from the above problems in vacuum treatment other than deposition and surface treatment.

The present invention has been made to solve the above problems, the thin film having a high adhesion and dense structure on the powder by allowing a high-density metal, oxide or nitride thin film to be deposited over the entire surface of the powder by a physical method An object of the present invention is to provide a vacuum processing apparatus capable of forming a film and a vacuum processing method of powder using the same.

In addition, an object of the present invention is to provide a vacuum treatment apparatus for enabling a vacuum treatment such as surface treatment over the entire surface of the powder and a vacuum treatment method of the powder using the same.

Vacuum processing apparatus according to the present invention, the powder is accommodated, rotatable drive, the rotating portion provided with at least one protrusion on the inner circumference; A chamber accommodating the rotating part and capable of forming a vacuum; And at least one processing source disposed inside the rotating part and performing a vacuum treatment toward the powder.

Here, the protrusion may be formed at an angle of 5 ° or more from the rotating part, may have a curved or refracted shape, and may have a height of 5 to 30 mm from the inner circumference of the rotating part.

In addition, the treatment source is disposed 50 to 200 mm apart from the upper portion of the powder, a pair may be arranged at an angle of 90 to 150 degrees to each other.

In this case, the treatment source may be any one or more of a surface treatment source, an etching source, and a deposition source. In the case of the deposition source, the treatment source may be a deposition source including a magnetron source, and may be disposed to form a confining magnetic field. Magnetic means may be further provided to form a confining magnetic field with the deposition source.

In addition, a driving unit is provided to contact the outer circumference of the rotating unit so as to rotate the rotating unit, and transmits a driving force by the rotating unit to the rotating unit, and at least two of the driving units are symmetrical with respect to the load direction of the rotating unit. The driving unit may be provided with a mounting, and the rotating part contacting with the driving part may be provided with a mounting that is fitted with the mounting of the driving part, such that the rotating part may be interlocked when the driving part is rotated.

Vacuum processing method of the powder according to the present invention comprises the steps of: accommodating the powder is provided with a projection and a rotationally rotatable rotating portion; Forming the rotary part in a vacuum atmosphere; And rotating the rotary part to perform a vacuum treatment on the powder to a processing source disposed above the powder while flowing the powder.

Hereinafter, a vacuum processing apparatus and a vacuum processing method of powder using the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Although the following embodiments exemplify only vacuum deposition, particularly physical vapor deposition, as an example of vacuum processing, the present invention can also be applied to vacuum processing such as surface treatment or chemical vapor deposition.

1 is a schematic cross-sectional view of a vacuum processing apparatus according to an exemplary embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of a side cross-sectional view of FIG. 1.

1 and 2, the sputtering apparatus 100 according to an embodiment of the present invention, the rotary container 20 is accommodated and rotatably driven, at least one protrusion is provided on the inner circumference, At least one deposition source for accommodating the rotating container 20 and disposed inside the rotating container 20 capable of forming a vacuum and the rotating container 20 in the chamber 10 and supplying the deposition material toward the powder S. And 40.

The chamber 10 is configured to communicate with a normal vacuum exhaust system V and a gas supply source G as the vacuum chamber 10, and an opening / closing door 11 which can be opened and closed by a hinge method or the like is configured on either side. In addition to the chamber 10, a suitable port may be further formed as necessary.

In the chamber 10, a rotatable rotating container 20 is provided, and the rotating container 20 is disposed in the lower part of the chamber 10 to a driving unit 30 supporting the lower part of the rotating container 20. By means of being rotatable. The rotation direction of the rotary container 20 may be either clockwise or counterclockwise in FIG. 1.

In the rotary container 20, more specifically, a plurality of protrusions 21 are formed on the inner circumferential surface of the rotary container 20 having a cylindrical shape to circulate the inner circumference according to the rotation of the rotary container 20.

The driving unit 30 is disposed in the lower portion inside the chamber 10 to be in contact with the two points of the lower portion of the rotating container 20, either or both of the two by the driving means (not shown) to rotate the rotational force The rotary container 20 is rotated about an imaginary rotation axis by transmitting to the rotary container 20.

If necessary, the driving unit 30 may be provided with one or more pairs, and the position thereof is not limited and may be in contact with the rotating container 20. Therefore, the driving unit 30 is preferably disposed in the chamber 10.

However, in order to support the load of the rotating vessel 20 and at the same time to double the rotational force transmission by the load of the rotating vessel 20, it is preferable to be disposed in contact with the lower portion of the rotating vessel 20, more preferably, circular The rotating vessel 20 is disposed symmetrically on both sides with respect to the outer bottom surface.

Preferably, the at least one driving unit 30 and the mounting on the outer surface of the rotating container 20 in contact with each other is formed so that the rotational force of the driving unit 30 in conjunction with the driving of the driving unit 30 To be efficiently transmitted to the rotating container 20, and prevents reverse rotation during rotation of the rotating container 20 in one of clockwise and counterclockwise directions.

The powder S is accommodated in the rotating container 20, more specifically on the inner circumferential surface of the rotating container 20, and despite the rotational drive of the rotating container 20, the inner circumferential surface of the rotating container 20 under the influence of gravity. It is located at the bottom of.

In order to perform coating on the powder S, the deposition source 40 is configured inside the rotary container 20 and is disposed to face in the vertical downward direction. In addition, the vapor deposition source 40 is arrange | positioned spaced apart from the inner peripheral surface of the rotating container 20 in the inside of the rotating container 20 by predetermined intervals. That is, the deposition source 40 is disposed to be spaced apart from the inner circumferential surface of the rotating container 20 by a predetermined distance while facing the ground direction so as to face the powder S accommodated in the rotating container 20.

Here, the drive shaft is provided on the imaginary rotation shaft so as not to interfere with the deposition source 40, for example, the drive shaft is mounted on the other side of the side into which the deposition source 40 is drawn into the rotary container 20, the rotary container 20 may be rotated, and the drive unit 30 and the drive shaft may rotate the rotary container 20 simultaneously or separately.

The powder S in the present invention contains colloids, fine powders, ordinary powders, coarse powders or solids, and may be any solid state.

In addition, the powder (S) in the present invention is an aggregate in which a large number of amorphous particles are aggregated, carbide-based such as SiC, oxide-based such as SiO ₂ , nitride-based such as SiN, metal-based particles such as Fe-based steel balls, Au, Ag, An ionic compound such as NaCl, an organism such as rice, or a tablet, capsule or cyclic drug are collectively referred to. In this case, the deposition source 40 with respect to the powder (S) includes a material coated on the powder (S), and may be a metal, a metal compound, an organic material, and the like, and reactive with the deposition source 40 containing a metal. Through sputtering, carbides, nitrides, oxides and the like can be produced.

3 is an enlarged view of a portion “A” of FIG. 1.

Referring to FIG. 3, the deposition source 40 is a pair of sputtering deposition sources 41 and 42, and the sputtering deposition sources 41 and 42 in the embodiment of the present invention are equipped with a magnetron source (not shown). It may be a pair of sputtering deposition source (41, 42), preferably the magnetron source mounted on the pair of sputtering deposition source (41, 42) to form a confining magnetic field between the sputtering deposition source (41, 42) It is configured to further improve the plasma generation efficiency in the magnetic field.

That is, if the magnetic arrangement in the sputtering deposition source 41 has the arrangement of NS, the magnetic arrangement in the sputtering deposition source 42 has the arrangement of NS, so that the region of the predetermined region in the sputtering deposition sources 41 and 42 which are adjacent to each other. It is arranged to form a confining magnetic field.

The magnetic arrangement in the sputtering deposition source 41 may be SN, NSN or SNS, and in any case, the sputtering deposition source 42 adjacent thereto has a magnetic arrangement corresponding to the magnetic arrangement of the sputtering deposition source 41. .

More preferably, the powder S is disposed in a virtual space where the constrained magnetic field formed by the various magnetic arrangements described above is formed, that is, in a region capable of sufficient plasma generation efficiency, thereby improving deposition efficiency and thin film characteristics. To do that.

The pair of sputtering deposition sources 41 and 42 are arranged to have mutual angles θ _t , and extend in the ground direction or the observer direction in FIG. 3 to match the size of the rotating container 20.

Here, the mutual angle θ _t is preferably formed at 90 ° or more and 150 ° or less. When the mutual angle θ _t is less than 90 °, interference may occur between atoms sputtered at targets 41t and 42t of each sputtering deposition source 41 and 42, and valences sputtered at either target 41t or 42t may occur. This is because the sputtering efficiency, process stability, etc. may be lowered toward the other targets 42t and 41t, and if it exceeds 150 °, it is formed between the sputtering deposition sources 41 and 42 to be more precisely opposite to the adjacent position. The constrained magnetic field formed between the outermost sides in the direction, ie, the mutual angle (θ _t ), is weak, so that the magnetic confinement effect is insignificant, and the plasma generation efficiency is lowered. This is because the deposition efficiency is reduced.

In addition, the pair of sputtering deposition sources 41 and 42 may be spaced 50 mm or more and 200 mm or less from the surface of the powder S accommodated on the rotary container 20. Of course, the surface of the powder (S) is the height from the inner circumferential surface of the rotary container 20 according to the amount of the powder (S) accommodated in the rotary container 20, therefore, in the present specification of the deposition source (41, 42) The position is explained by the distance from the surface of the powder S.

When the distance between the surface of the sputtering deposition sources 41 and 42, more precisely, the surface of the targets 41t and 42t and the surface of the powder S is less than 50 mm, the powder flows due to the rotation of the rotating container 20. (S) may be in contact with the discharge characteristics or process stability may be lowered, if it exceeds 200 mm, the surface of the powder (S) to be deposited thin film is substantially located outside the restraint magnetic field or the target 41t, This is because the energy to reach the surface of the powder S of the sputtered atoms at 42t is lowered, which may lower the film formation characteristics.

Preferably, the deposition source 40 is configured to adjust the distance with the surface of the powder (S) in response to the amount of the powder (S) accommodated in the rotary container 20 by a separately configured interval adjusting means.

Here, a pulse power source can be used as a power source applied to the sputtering deposition sources 41 and 42. The pulse magnetron sputtering method using a pulse power source can obtain a high density thin film by increasing the ion / neutral ratio and the metal ion fraction on the workpiece. It is useful for depositing.

This pulse magnetron sputtering method is used to overcome the limitations of target power density and target cooling due to target heating problems in a conventional direct current (DC) magnetron, and the target surface during reactive sputtering using oxygen gas or the like. Accumulation of charges due to the formation of oxides can also be eliminated.

In addition, the use of an asymmetric magnetron type as a magnetron source in this sputtering method can further increase the plasma generation efficiency by confining the charge in the plasma region in the magnetic field.

The asymmetric magnetron type can be embodied as the magnetic arrangement described above, and as shown in FIG. 4, the outer side of the rotary vessel 20, that is, the sputter deposition source 41, 42 of the rotary vessel 20 disposed therein. It may be implemented by the magnetic means 60 provided separately to the outside. The dotted line in FIG. 4 is an imaginary line showing the confining magnetic field that may be formed between the deposition source 40 and the magnetic force means 60.

When the separate magnetic means 60 is provided outside the rotating vessel 20, the confining magnetic field may be formed in a larger area than the confining magnetic field by only the evaporation source 40, and the evaporation source 40 may be used. Unlike changing the constrained magnetic field in the sputtering deposition source (41, 42) to disassemble and reassemble each other, the constrained magnetic field can be easily changed by adjusting the magnetic force or position of the magnetic force means (60). have.

Herein, the magnetic force means 60 may be a magnet, and any means may be used as long as it is an electromagnet or other means capable of adding magnetic force.

Of course, the sputtering deposition sources 41 and 42 may have other arrangements than the arrangement shown in FIG. 3, and in addition to the arrangement of the pair of sputtering deposition sources 41 and 42, the arrangement of three or more sputtering deposition sources 40 may also be used. In any case, it is preferable that the deposition source 40 is disposed vertically with respect to the powder S and the powder S is located on the confining magnetic field of the deposition source 40.

Since the deposition source 40 is disposed in close proximity to the powder S, it is possible to further improve the deposition efficiency compared to the structure in which the deposition source is disposed on the left and right sides of the cylinder in the conventional cylindrical deposition apparatus, and obtain excellent thin film characteristics. have.

As shown in FIG. 3 (or similarly, FIG. 4), at least one protrusion 21 is formed on the inner circumference of the rotating container 20, that is, on the inner side thereof, and is fixed with respect to the tangent of the inner circumferential surface on which the protrusion 21 is formed. It has an angle θ.

At this time, it is preferable that the angle (theta) which the protrusion 21 makes with the rotating container 20 is 5 degrees or more. When the angle θ is less than 5 °, since the vertical height from the rotating container 20 is low, the flow capacity of the powder S may be reduced, and the powder S may have a protrusion 21 and the rotating container of less than 5 °. This is because it is trapped between the 20 and can actually inhibit the flow. When the angle θ exceeds 90 °, the obtuse angle is virtually acute with respect to the rotating vessel 20 in the other quadrant, and therefore, the upper limit is meaningless.

In addition, the protruding portion 21 may have a shape extending from the rotating container 20 by bending. The curvature may be curved as shown in FIG. 3 (or similarly, FIG. 4), and reverse curvature thereof may be possible, and the degree or direction of the curvature may be determined according to the powder S applied. In addition to the curved protrusions 21, the protrusions 21 may also be refractive.

The powder S flowing through the curved or refracted protrusion 21 is more easily formed due to the increased contact area with the protrusion 21 as compared with the straight protrusion 21. Deviation from the deposition region of the powder S due to the shear force between the inner wall of the rotating container 20 and the powder S generated when the container 20 rotates in one direction is a curved or refracted protrusion formed to inhibit the capturing ability ( 21) can be reduced.

Here, the protrusion 21 may be any one of a straight, curved and refracted type, the height from the inner circumferential surface of the rotary container 20 may be 5 mm or more and 30 mm or less.

In the case of the protrusion 21 having a height of less than 5 mm, the powder S has no flow capacity as required, and in the case of the protrusion 21 having a height exceeding 30 mm, the collecting capacity of the powder S is improved. Since the part of the powder S which flowed by the rotation of the rotating container 20 can leave a vapor deposition area | region with being captured by the protrusion part 21, it is preferable that the height of the protrusion part 21 is 5 mm or more and 30 mm or less.

Here, the 'height' refers to the height from the inner peripheral surface of the rotary container 20.

In the embodiment described with reference to FIGS. 1 to 4, only the sputtering deposition sources 41 and 42 are illustrated as the deposition source 40, but other deposition sources may also be possible, for example, a surface treatment source as a vacuum treatment source, for example. For example, a plasma source for plasma surface treatment may be used.

As an example in which the plasma source for plasma surface treatment is applied, an example of improving the fluorescence efficiency by cleaning the surface of the ZnS powder for inorganic phosphors may be mentioned.

In addition, the processing source may be an etching source, and in particular, a plasma etching source. As an example of such an etching source, a part of grain embryos such as rice and the like may be etched to facilitate germination and improve germination rates.

Even when the plasma source for plasma surface treatment or the plasma source for plasma surface treatment is used as an etching source, the processing efficiency can be improved by being disposed close to the powder, and even if a shortened plasma plume is used, Processing may be possible, thereby improving process efficiency.

Hereinafter, a vacuum processing method of powder using a vacuum processing apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings. In this embodiment, vacuum deposition will be described as an example of vacuum processing.

Vacuum processing method of the powder according to an embodiment of the present invention, comprising the steps of receiving the powder in a rotary container rotatable and provided with a projection; Forming the rotating container with a vacuum atmosphere; And rotating the rotary container to perform a vacuum treatment on the powder with a processing source disposed above the powder while flowing the powder.

First, powder such as NaCl or SiO ₂ or the like is accommodated in a rotating container. The rotating container is provided with a protrusion toward the side where the powder is received and is configured to be rotatable.

Thereafter, the rotating container is formed in a vacuum atmosphere and the rotating container is rotated. At this time, the powder is flowed by the projection which revolves about the center of the rotating container by the rotation of the rotating container, the free surface is rotated arbitrarily by the flow. Driving conditions such as rotation speed and rotation direction may be set differently depending on the type of powder used.

When the flow of the powder starts, a vacuum treatment is performed on the powder with a treatment source installed on top of the powder, more specifically inside the hollow rotating container.

At this time, the treatment source is a vacuum deposition source and the vacuum treatment may be a deposition treatment.

5a to 5b are partial views showing the flow of the powder during the rotation of the vacuum processing apparatus according to an embodiment of the present invention, Figure 5b shows a state in which the rotary container 20 is rotated a predetermined distance in the direction of the arrow in Figure 5a. .

As illustrated in FIG. 5A, deposition is performed on the powder S deposited at the bottom of the rotating container 20 by a deposition source (see FIG. 3 or FIG. 4), and the deposition material is deposited on the deposited powder S. do.

When the rotating container 20 rotates a predetermined distance (in the clockwise direction in FIG. 5B), the powder S flows, and the powder S 'deposited on the upper portion by the rotational force and the protrusion 21 of the rotating container 20. Many of them are located opposite to the direction of rotation of the rotating vessel 20 by inertia.

Since the deposition of the powder S is continuously performed by the evaporation source, the deposition is performed on the powder S disposed above, that is, the powder S on which the deposition material is not deposited, and is continuously subjected to continuous rotation of the rotating container. 5a and 5b are repeated.

Such flow of the powder S occurs randomly, and the deposited powder S 'may be again located on the deposition region, that is, the upper portion by the deposition source.

By performing the deposition as described above, the deposition on each of the individual powder (S) may be possible, the deposition time may vary depending on the type, size or amount of the powder (S) used.

6a to 6b are partial views showing the flow of a single powder during the rotation of the vacuum processing apparatus according to an embodiment of the present invention, Figure 6b is a state in which the rotating container 20 is rotated a predetermined distance in the direction of the arrow in Figure 6a Indicates.

As illustrated in FIG. 6A, deposition is performed on a single powder S at the bottom of the rotating container 20 by a deposition source (see FIG. 3 or FIG. 4), and the deposition material is deposited on the upper surface of the single powder S. Referring to FIG.

When the rotating container 20 rotates a predetermined distance (also clockwise in FIG. 6B), the powder S flows, and the single powder S is rotated by the rotational force and the protrusion 21 of the rotating container 20. The deposited surface Sa is also rotated so that the undeposited surface Sb is exposed toward the deposition source and the deposition is performed on the undeposited surface Sb.

The single powder S may be rotated in a clockwise direction with respect to the rotation progress direction of the rotary container 20, that is, clockwise by inertia.

Since the deposition of the powder S is continuously performed by the evaporation source, the deposition is performed on the undeposited surface Sb of the powder S, and as shown in FIGS. 6A and 6B by continuous rotation of the rotating container. The process is repeated.

The flow of such a single powder (S) occurs randomly, the deposited surface (Sa) may again be located in the deposition region, that is, the upper portion by the deposition source.

By performing the deposition as described above, deposition on the entire surface of a single powder (S) may be possible, and the deposition time may vary depending on the type, size, or shape of the powder (S) used.

5A to 6B, the powder S accommodated in the rotating container 20 may be relatively uniformly deposited over the entire area and with respect to each of the individual powders S.

Tables 1 and 2 show NaCl and SiO ₂ powders deposited in this manner, respectively, and in the case of SiO ₂ powders, the particle size was small, and thus the microscopic images were shown. Cu was deposited for each powder, and an enlarged photograph was shown before, after, and after deposition.

Before deposition After deposition After Deposition (Enlarged Photo) NaCl

In the case of NaCl, it can be observed that despite the large variation in powder particle size, deposition of Cu was made without undeposited portions.

Before deposition After deposition After Deposition (Enlarged Photo) SiO ₂

In addition, in the case of SiO ₂ , referring to the enlarged photograph, it can be seen that the deposited Cu thin film was uniformly deposited. In Table 2, it should be noted that the magnifications before and after deposition are different. At this time, the uniformity of the deposited Cu thin film is less than 1%. In the exemplary embodiment of the present invention, since the aggregation between the thin films according to the powder flow does not occur by performing the dry process using the plasma, it is possible to obtain such a uniform thin film.

As such, by the vacuum deposition method of the powder according to an embodiment of the present invention, the required thin film may be deposited over the entire surface of the powder with a high adhesion and a dense structure regardless of the size of the powder.

Although the technical spirit of the present invention has been described in detail according to the above-described preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

By the vacuum treatment apparatus and the vacuum treatment method of the powder according to the present invention as described above, the high-density metal, oxide or nitride thin film can be deposited over the entire surface of the powder by a physical method, thereby providing a high adhesion on the powder and The thin film having a dense structure can be formed uniformly.

In addition, the present invention can efficiently enable vacuum treatment such as surface treatment over the entire surface of the powder.

Claims (13)

Rotating part that is accommodated in the powder and rotatable, the at least one protrusion is provided on the inner circumference; A chamber accommodating the rotating part and capable of forming a vacuum; And At least one processing source disposed inside the rotating unit and performing vacuum processing toward the powder; Vacuum processing apparatus comprising a. The vacuum processing apparatus of claim 1, wherein the protrusion is formed at an angle of 5 ° or more from the rotation part. The vacuum processing apparatus of claim 1, wherein the protrusion is curved or refracted. The vacuum processing apparatus according to claim 1, wherein the protrusion has a height of 5 to 30 mm from an inner circumference of the rotating part. The vacuum processing apparatus according to claim 1, wherein the processing source is disposed 50 to 200 mm apart from the upper portion of the powder. The vacuum processing apparatus according to claim 1, wherein the pair of processing sources is disposed at an angle of 90 to 150 degrees with each other. The vacuum processing apparatus of claim 1, wherein the treatment source is at least one of a surface treatment source, an etching source, and a deposition source. The vacuum processing apparatus according to claim 1, wherein the processing source is a deposition source including a magnetron source and is arranged to form a confining magnetic field. The vacuum processing apparatus according to claim 8, further comprising a magnetic force means to form a confining magnetic field with the deposition source on the outer side of the rotating part. The vacuum processing apparatus according to claim 1, further comprising a driving unit which contacts the outer circumference of the rotating unit to transmit the driving force by rotation to the rotating unit so as to rotate the rotating unit. The vacuum processing apparatus according to claim 10, wherein at least two of the driving units are configured symmetrically with respect to the load direction of the rotating unit. 12. The method of claim 10, wherein the driving unit is provided with a cradle (회전), and the rotating part in contact with the driving unit is formed with a mounting to be fitted with the mounting of the driving unit, so that the rotation unit is rotated in conjunction with the rotation of the drive unit. Characterized in that the vacuum processing apparatus. Accommodating the powder with the protruding portion and the rotatable driving portion; Forming the rotary part in a vacuum atmosphere; And Performing a vacuum treatment on the powder by rotating the rotating unit while flowing the powder, using a processing source disposed above the powder; Vacuum processing method of the powder comprising a.

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