KR20080080339A - 압전 세라믹 및 그 제조방법 및 압전 공진자 및 그제조방법 - Google Patents
압전 세라믹 및 그 제조방법 및 압전 공진자 및 그제조방법 Download PDFInfo
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- KR20080080339A KR20080080339A KR20087015526A KR20087015526A KR20080080339A KR 20080080339 A KR20080080339 A KR 20080080339A KR 20087015526 A KR20087015526 A KR 20087015526A KR 20087015526 A KR20087015526 A KR 20087015526A KR 20080080339 A KR20080080339 A KR 20080080339A
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- piezoelectric ceramic
- piezoelectric
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- resonance frequency
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- 239000000919 ceramic Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims description 24
- 230000008569 process Effects 0.000 title claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 30
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000010030 laminating Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000008859 change Effects 0.000 description 25
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 230000010287 polarization Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000001103 potassium chloride Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth based oxides
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/178—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of a laminated structure of multiple piezoelectric layers with inner electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Abstract
Description
Claims (8)
- 비스무트 층상 구조를 갖는 화합물로 이루어지는 압전 세라믹으로서,c축의 배향도가 서로 다른 적어도 제1 및 제2의 부분을 포함하는 것을 특징으로 하는 압전 세라믹.
- 제1항에 있어서,상기 제1 및 제2의 부분은 각각 층상을 이루면서 교대로 적층되어 있는 것을 특징으로 하는 압전 세라믹.
- 제1항에 있어서,상기 제1의 부분은 양의 공진주파수 온도계수를 가지며, 상기 제2의 부분은 음의 공진주파수 온도계수를 갖는 것을 특징으로 하는 압전 세라믹.
- 제1항에 있어서,상기 비스무트 층상 구조를 갖는 화합물은 적어도 Sr, Bi 및 Nb를 포함하는 복합산화물인 것을 특징으로 하는 압전 세라믹.
- 제4항에 있어서,로트게링법(Lotgering method)에 의해 측정한 배향도에 있어서, 상기 제1의 부분의 c축 배향도는 70% 이상이고, 상기 제2의 부분의 c축 배향도는 70% 미만인 것을 특징으로 하는 압전 세라믹.
- 제1항 내지 제5항 중 어느 한 항에 기재된 압전 세라믹과 상기 압전 세라믹에 접하도록 설치된 전극을 포함하는 것을 특징으로 하는 압전 공진자.
- 비스무트 층상 구조를 갖는 판상 결정입자를, 제1의 함유율을 갖고 함유하는 제1의 세라믹 그린시트를 준비하는 공정과,비스무트 층상 구조를 갖는 판상 결정입자를, 상기 제1의 함유율보다 낮은 제2의 함유율(제2의 함유율은 0을 포함함)을 갖고 함유하는 제2의 세라믹 그린시트를 준비하는 공정과,상기 제1 및 제2의 세라믹 그린시트를 교대로 적층함으로써 적층체를 얻는 공정과,상기 적층체를 소성하는 공정을 포함하는 것을 특징으로 하는 압전 세라믹의 제조방법.
- 제7항에 기재된 압전 세라믹의 제조방법에 의해 압전 세라믹을 얻는 공정과,상기 압전 세라믹에 접하도록 설치되는 전극을 형성하는 공정을 포함하는 것을 특징으로 하는 압전 공진자의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005371773A JP4910390B2 (ja) | 2005-12-26 | 2005-12-26 | 圧電セラミックおよびその製造方法ならびに圧電共振子およびその製造方法 |
JPJP-P-2005-00371773 | 2005-12-26 |
Publications (2)
Publication Number | Publication Date |
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KR20080080339A true KR20080080339A (ko) | 2008-09-03 |
KR101021740B1 KR101021740B1 (ko) | 2011-03-15 |
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Application Number | Title | Priority Date | Filing Date |
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KR20087015526A KR101021740B1 (ko) | 2005-12-26 | 2006-10-02 | 압전 세라믹 및 그 제조방법 및 압전 공진자 및 그제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7750541B2 (ko) |
EP (1) | EP1968127B1 (ko) |
JP (1) | JP4910390B2 (ko) |
KR (1) | KR101021740B1 (ko) |
CN (1) | CN101346828B (ko) |
WO (1) | WO2007074566A1 (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5166048B2 (ja) | 2008-01-21 | 2013-03-21 | 日本碍子株式会社 | 結晶配向セラミックス |
WO2008105290A1 (ja) * | 2007-02-26 | 2008-09-04 | Ngk Insulators, Ltd. | 結晶配向セラミックス |
JP5094284B2 (ja) * | 2007-08-29 | 2012-12-12 | 京セラ株式会社 | 圧電磁器および圧電素子 |
US8410868B2 (en) | 2009-06-04 | 2013-04-02 | Sand 9, Inc. | Methods and apparatus for temperature control of devices and mechanical resonating structures |
US8476809B2 (en) | 2008-04-29 | 2013-07-02 | Sand 9, Inc. | Microelectromechanical systems (MEMS) resonators and related apparatus and methods |
WO2010077313A1 (en) | 2008-12-17 | 2010-07-08 | Sand9, Inc. | Mechanical resonating structures including a temperature compensation structure |
US8689426B2 (en) | 2008-12-17 | 2014-04-08 | Sand 9, Inc. | Method of manufacturing a resonating structure |
EP2377244A4 (en) | 2008-12-17 | 2013-09-18 | Sand 9 Inc | MULTI-PORT MECHANICAL RESONANT DEVICES AND RELATED METHODS |
US9048811B2 (en) | 2009-03-31 | 2015-06-02 | Sand 9, Inc. | Integration of piezoelectric materials with substrates |
US8228127B2 (en) | 2009-12-23 | 2012-07-24 | Sand 9, Inc. | Oscillators having arbitrary frequencies and related systems and methods |
US8661899B2 (en) | 2010-03-01 | 2014-03-04 | Sand9, Inc. | Microelectromechanical gyroscopes and related apparatus and methods |
WO2011133682A1 (en) | 2010-04-20 | 2011-10-27 | Guiti Zolfagharkhani | Microelectromechanical gyroscopes and related apparatus and methods |
US9075077B2 (en) | 2010-09-20 | 2015-07-07 | Analog Devices, Inc. | Resonant sensing using extensional modes of a plate |
US9406865B2 (en) * | 2011-08-19 | 2016-08-02 | Qualcomm Incorporated | Composite piezoelectric laterally vibrating resonator |
US9383208B2 (en) | 2011-10-13 | 2016-07-05 | Analog Devices, Inc. | Electromechanical magnetometer and applications thereof |
CN103360082B (zh) * | 2012-03-31 | 2016-09-14 | 深圳光启创新技术有限公司 | 一种谐振子及制备方法、介质滤波器 |
KR101453150B1 (ko) * | 2012-04-30 | 2014-10-23 | 울산대학교 산학협력단 | Rtgg 방법에 의한 무연 압전 세라믹스의 제조방법 및 그에 의해 제조된 무연 압전 세라믹스 |
WO2017086026A1 (ja) * | 2015-11-16 | 2017-05-26 | 日本碍子株式会社 | 配向焼結体の製法 |
EP3421648B1 (en) | 2016-02-25 | 2023-01-25 | NGK Insulators, Ltd. | Polycrystalline gallium nitride self-supported substrate and light emitting element using the same |
US10800649B2 (en) | 2016-11-28 | 2020-10-13 | Analog Devices International Unlimited Company | Planar processing of suspended microelectromechanical systems (MEMS) devices |
US10843920B2 (en) | 2019-03-08 | 2020-11-24 | Analog Devices International Unlimited Company | Suspended microelectromechanical system (MEMS) devices |
CN116063072B (zh) * | 2023-01-16 | 2023-09-22 | 西安电子科技大学 | 一种高温压电陶瓷异质结材料及其制备方法 |
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JP3141744B2 (ja) * | 1995-08-31 | 2001-03-05 | 株式会社村田製作所 | 圧電トランス |
JP3732967B2 (ja) * | 1999-04-28 | 2006-01-11 | 京セラ株式会社 | 磁器組成物 |
JP3651348B2 (ja) * | 1999-05-24 | 2005-05-25 | 株式会社村田製作所 | 圧電素子 |
JP4544712B2 (ja) * | 2000-07-31 | 2010-09-15 | 京セラ株式会社 | 圧電磁器および圧電素子 |
JP4147954B2 (ja) * | 2002-03-25 | 2008-09-10 | 株式会社村田製作所 | 圧電素子の製造方法 |
JP4088477B2 (ja) * | 2002-05-27 | 2008-05-21 | Tdk株式会社 | 薄膜容量素子および薄膜積層コンデンサ |
JP2004165596A (ja) * | 2002-09-24 | 2004-06-10 | Tdk Corp | 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサ、電子回路および電子機器 |
EP1598872A1 (en) * | 2003-02-27 | 2005-11-23 | TDK Corporation | High dielectric constant insulating film, thin-film capacitive element, thin-film multilayer capacitor, and method for manufacturing thin-film capacitive element |
CN1768403A (zh) | 2003-02-27 | 2006-05-03 | Tdk株式会社 | 薄膜电容元件用组合物、高介电常数的绝缘膜、薄膜电容元件、薄膜积层电容器、电路和电子仪器 |
WO2005102958A1 (ja) * | 2004-04-26 | 2005-11-03 | Tdk Corporation | 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法 |
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2005
- 2005-12-26 JP JP2005371773A patent/JP4910390B2/ja not_active Expired - Fee Related
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2006
- 2006-10-02 EP EP20060811027 patent/EP1968127B1/en not_active Not-in-force
- 2006-10-02 CN CN2006800491007A patent/CN101346828B/zh not_active Expired - Fee Related
- 2006-10-02 WO PCT/JP2006/319679 patent/WO2007074566A1/ja active Application Filing
- 2006-10-02 KR KR20087015526A patent/KR101021740B1/ko active IP Right Grant
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- 2008-06-26 US US12/147,173 patent/US7750541B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1968127A1 (en) | 2008-09-10 |
KR101021740B1 (ko) | 2011-03-15 |
JP2007173679A (ja) | 2007-07-05 |
JP4910390B2 (ja) | 2012-04-04 |
EP1968127A4 (en) | 2011-07-06 |
EP1968127B1 (en) | 2013-02-27 |
US20080284286A1 (en) | 2008-11-20 |
CN101346828B (zh) | 2010-09-22 |
CN101346828A (zh) | 2009-01-14 |
US7750541B2 (en) | 2010-07-06 |
WO2007074566A1 (ja) | 2007-07-05 |
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