KR20080056088A - 정전 척의 유전체층의 체적 저항률 측정 장치 및 그 장치를사용한 측정 방법 - Google Patents
정전 척의 유전체층의 체적 저항률 측정 장치 및 그 장치를사용한 측정 방법 Download PDFInfo
- Publication number
- KR20080056088A KR20080056088A KR1020070128878A KR20070128878A KR20080056088A KR 20080056088 A KR20080056088 A KR 20080056088A KR 1020070128878 A KR1020070128878 A KR 1020070128878A KR 20070128878 A KR20070128878 A KR 20070128878A KR 20080056088 A KR20080056088 A KR 20080056088A
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- KR
- South Korea
- Prior art keywords
- electrostatic chuck
- dielectric layer
- conductive rubber
- volume resistivity
- measuring
- Prior art date
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- 238000000034 method Methods 0.000 title abstract description 17
- 229920001971 elastomer Polymers 0.000 claims abstract description 131
- 239000005060 rubber Substances 0.000 claims abstract description 131
- 238000005259 measurement Methods 0.000 claims description 44
- 238000000691 measurement method Methods 0.000 claims description 2
- 238000004080 punching Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Abstract
Description
Claims (2)
- 측정되는 정전 척의 유전체층의 표면에 대향하는 측정면을 가지며, 그 측정면이 각각 동일 평면 내에서 간격을 두고 배치되는 한 쌍의 도전성 고무 전극과,이 한 쌍의 도전성 고무 전극을 접속하는 전기 회로에 설치되는 직류 전원 및 전류계를 구비하며,각 도전성 고무 전극은, 측정면이 서로 동일 면적이 되고 동일한 저항값을 갖는 형상이며,각 도전성 고무 전극의 간격이, 측정되는 정전 척의 유전체층의 두께의 6배 이상이며,각 도전성 고무 전극은 체적 저항률이 1×105Ω·㎝ 이하이고,각 도전성 고무 전극은 JIS-A 경도로 60Hs 내지 80Hs의 범위인 것을 특징으로 하는 정전 척의 유전체층의 체적 저항률 측정 장치.
- 측정되는 정전 척의 유전체층의 표면에 대향하여 배치하는 한 쌍의 도전성 고무 전극으로서, 이 정전 척의 유전체층의 표면에 대향하는 측정면을 가지며, 이 측정면이 서로 동일 면적이 되고 동일한 저항값을 갖는 형상이며, 체적 저항률이 1×105Ω·㎝ 이하이며, JIS-A 경도로 60Hs 내지 80Hs의 범위인 것을 사용하고,이 한 쌍의 도전성 고무 전극을, 각각의 측정면을 동일 평면 내로 하여, 정 전 척의 유전체층의 두께의 6배 이상의 간격을 두고 배치한 후, 이 측정면과 정전 척의 유전체층의 표면을 밀착시키며,이 한 쌍의 도전성 고무 전극 사이를 접속하는 전기 회로에 설치되는 직류 전원으로부터, 플러스 전압과 마이너스 전압을 번갈아 인가하고, 이 전기 회로에 접속하고 있는 전류계에 의해 측정되는 전류값의 평균값을 사용해서, 정전 척의 유전체층의 체적 저항률을 산출하는 것을 특징으로 하는 정전 척의 유전체층의 체적 저항률 측정 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006338469A JP4926688B2 (ja) | 2006-12-15 | 2006-12-15 | 静電チャックの誘電体層の体積抵抗率測定装置及びその装置を用いた測定方法 |
JPJP-P-2006-00338469 | 2006-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080056088A true KR20080056088A (ko) | 2008-06-20 |
KR100936205B1 KR100936205B1 (ko) | 2010-01-11 |
Family
ID=39526355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070128878A KR100936205B1 (ko) | 2006-12-15 | 2007-12-12 | 정전 척의 유전체층의 체적 저항률 측정 장치 및 그 장치를사용한 측정 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7710130B2 (ko) |
JP (1) | JP4926688B2 (ko) |
KR (1) | KR100936205B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG2014012371A (en) * | 2011-08-19 | 2014-04-28 | Ulvac Inc | Vacuum processing device and vacuum processing method |
KR102299890B1 (ko) * | 2017-08-01 | 2021-09-09 | 세메스 주식회사 | 정전 척 및 기판 처리 장치 |
TWI626453B (zh) * | 2017-09-29 | 2018-06-11 | 中華精測科技股份有限公司 | 探針組件及其空間轉換介面板 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2492535A1 (fr) * | 1980-10-17 | 1982-04-23 | Onera (Off Nat Aerospatiale) | Resistivimetre de surface |
US5093626A (en) * | 1990-05-11 | 1992-03-03 | E. I. Dupont De Nemours And Company | Contact measuring device for determining the dry film thickness of a paint on a conductive primer adhered to a plastic substrate |
JP3276267B2 (ja) * | 1995-07-11 | 2002-04-22 | ジェイエスアール株式会社 | 電気抵抗測定装置および電気抵抗測定方法 |
JPH0954126A (ja) * | 1995-08-18 | 1997-02-25 | Mitsubishi Chem Corp | シートの体積抵抗測定装置および体積抵抗測定方法 |
JPH11223646A (ja) * | 1998-02-06 | 1999-08-17 | Ngk Insulators Ltd | セラミックスの体積抵抗率の測定方法および装置 |
JP2000088900A (ja) * | 1998-09-08 | 2000-03-31 | Advantest Corp | 表面・体積抵抗測定装置 |
JP2003227861A (ja) * | 2002-01-31 | 2003-08-15 | Sumitomo Wiring Syst Ltd | コネクタ検査用プローブおよびコネクタ検査器 |
JP4386360B2 (ja) | 2004-12-06 | 2009-12-16 | 信越化学工業株式会社 | 静電チャック |
-
2006
- 2006-12-15 JP JP2006338469A patent/JP4926688B2/ja active Active
-
2007
- 2007-12-12 US US11/954,386 patent/US7710130B2/en active Active
- 2007-12-12 KR KR1020070128878A patent/KR100936205B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2008151581A (ja) | 2008-07-03 |
US20080143353A1 (en) | 2008-06-19 |
JP4926688B2 (ja) | 2012-05-09 |
US7710130B2 (en) | 2010-05-04 |
KR100936205B1 (ko) | 2010-01-11 |
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