KR20080047185A - 멀티칩 패키지 밀봉용 에폭시 수지 조성물 및 이를이용한 멀티칩 패키지 - Google Patents
멀티칩 패키지 밀봉용 에폭시 수지 조성물 및 이를이용한 멀티칩 패키지 Download PDFInfo
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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- H01L2224/732—Location after the connecting process
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Abstract
Description
구 성 성 분(중량%) | 실시예 1 | 실시예 2 | 비교예 1 | 비교예 2 | 비교예 3 | |||
에폭시 | 1)바이페닐형 에폭시 수지 | 2.92 | ||||||
2)페놀아랄킬형 에폭시 수지 | 2.72 | |||||||
브롬화에폭시 수지 | 0.50 | |||||||
삼산화 안티몬 | 0.50 | |||||||
경화제 | 3)자이록형 페놀수지 | 2.54 | ||||||
4)페놀아랄킬형 페놀수지 | 2.44 | |||||||
트리페닐포스핀 | 0.17 | |||||||
실리콘 파우더 | 0.30 | |||||||
5)충전제 | 87.0 | |||||||
커플링제 | 전체 중량 | 0.80 | ||||||
γ-글리시톡시프로필트리메톡시실란(에폭시 실란) | 중량% | - | - | 65 | 100 | 85 | ||
머캡토프로필트리메톡시 실란(머캡토 실란) | 25 | - | 5 | - | 10 | |||
메틸트리메톡시 실란 | 30 | 10 | 30 | - | 5 | |||
6) 화학식 1 | 45 | 90 | - | - | - | |||
카본블랙 | 0.22 | |||||||
카르나우바왁스 | 0.16 | |||||||
총계 | 100.00 |
평 가 항 목 | 실시예1 | 실시예2 | 비교예1 | 비교예2 | 비교예3 | |||
스파이럴 플로우(inch) | 42 | 46 | 46 | 46 | 43 | |||
Tg(℃) | 123 | 124 | 124 | 125 | 120 | |||
열팽창계수 α1(㎛/m,℃) | 9.6 | 9.3 | 10.1 | 10.4 | 10.6 | |||
부착력 | 은 (Silver) | After PMC | 105 | 115 | 65 | 35 | 44 | |
After 85RH*85℃*96Hr | 98 | 103 | 28 | 25 | 36 | |||
동(Copper) | After PMC | 67 | 75 | 43 | 32 | 40 | ||
After 85RH*85℃*96Hr | 63 | 70 | 16 | 11 | 13 | |||
굴곡강도(kgf/mm2 at 260℃) | 1.7 | 1.6 | 1.4 | 1.5 | 1.4 | |||
굴곡탄성율(kgf/mm2 at 260℃) | 59 | 45 | 75 | 75 | 80 | |||
흡습율(WT% at 121℃*100RH*24Hr) | 0.184 | 0.166 | 0.232 | 0.234 | 0.225 | |||
신 뢰 성 | 내크랙성 평가(열충격시험) 크랙 발생 수 | 0 | 0 | 23 | 37 | 19 | ||
박리 발생 수 | 0 | 0 | 75 | 87 | 109 | |||
총시험한 패키지 수 | 128 | 128 | 128 | 128 | 128 | |||
성 형 성 | 보이드 발생 수 (Visual Inspection) | 0 | 0 | 13 | 16 | 6 | ||
총시험한 패키지 수 | 256 | 256 | 256 | 256 | 256 |
Claims (21)
- 에폭시 수지, 경화제, 경화촉진제, 커플링제 및 무기 충전제를 포함하는 에폭시 수지 조성물에 있어서, 상기 커플링제가 탄화수소기를 함유하는 하이드록시실록산 수지를 포함하는 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 탄화수소기는 탄소수 1~6개의 알킬기 또는 페닐기인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 2항에 있어서, 상기 알킬기는 메틸기인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 하이드록시실록산 수지는 디메틸하이드록시실록산 수지인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 하이드록시실록산 수지는 래더 구조인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 6항에 있어서, 상기 알킬기는 메틸기인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 하이드록시실록산 수지는 상온에서 액상인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 하이드록시실록산 수지는 상온, 40% 부탄올 용액에서의 점도가 200 내지 800cps인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 하이드록시실록산 수지의 비중은 1 내지 1.6인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 하이드록시실록산 수지의 굴절율은 1.4 내지 1.6인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 커플링제가 전체 에폭시 수지 조성물에 대하여 0.01 ~ 10 중량%로 함유되는 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 하이드록시실록산 수지가 전체 커플링제에 대하여 20 ~ 100 중량%로 함유되는 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 충전제가 평균 입경 5㎛ 이상 30㎛ 이하의 구상 용융실리카 50~99 중량% 및 평균입경 1㎛ 이하의 구상용융 실리카 1~50 중량%의 혼합물인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 멀티칩 패키지 밀봉용 에폭시 수지 조성물은 응력완화제를 추가로 더 포함하는 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 17항에 있어서, 상기 응력완화제는 변성 실리콘 오일, 실리콘 파우더 및 실리콘 레진으로 구성된 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 17항에 있어서, 상기 응력완화제는 전체 에폭시 수지 조성물에 대하여 0.1 ~ 6.5 중량%로 함유되는 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항에 있어서, 상기 무기충전제가 전체 에폭시 수지 조성물에 대하여 70 ~ 95 중량%로 함유되는 것을 특징으로 하는 멀티칩 패키지 밀봉용 에폭시 수지 조성물.
- 제 1항 내지 제 20항 중 어느 한 항의 에폭시 수지 조성물을 사용하여 제조되는 멀티칩 패키지.
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KR1020060117214A KR100834351B1 (ko) | 2006-11-24 | 2006-11-24 | 멀티칩 패키지 밀봉용 에폭시 수지 조성물 및 이를이용한 멀티칩 패키지 |
CN2007101871809A CN101186802B (zh) | 2006-11-24 | 2007-11-21 | 多芯片封装用环氧树脂组合物以及利用该组合物的多芯片封装 |
JP2007302729A JP2008127577A (ja) | 2006-11-24 | 2007-11-22 | マルチチップパッケージ封止用エポキシ樹脂組成物、及びこれを用いたマルチチップパッケージ |
US11/984,933 US20080131702A1 (en) | 2006-11-24 | 2007-11-26 | Epoxy resin composition and semiconductor package including the same |
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WO2010083192A2 (en) * | 2009-01-16 | 2010-07-22 | 3M Innovative Properties Company | Epoxy resin composition |
KR101469265B1 (ko) * | 2011-12-26 | 2014-12-04 | 제일모직주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 장치 |
Families Citing this family (11)
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---|---|---|---|---|
CN102694761B (zh) * | 2011-03-24 | 2017-01-25 | 中兴通讯股份有限公司 | 接收信号的方法及系统、收发信号的方法及系统 |
US20140018475A1 (en) * | 2012-07-16 | 2014-01-16 | Baker Hughes Incorporated | High glass transition temperature thermoset and method of making the same |
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KR101557538B1 (ko) * | 2012-12-24 | 2015-10-06 | 제일모직주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 사용하여 밀봉된 반도체 소자 |
KR101516068B1 (ko) * | 2013-06-14 | 2015-04-29 | 삼성전기주식회사 | 인쇄회로기판용 수지 조성물, 빌드업필름, 프리프레그 및 인쇄회로기판 |
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WO2016204014A1 (ja) * | 2015-06-17 | 2016-12-22 | 株式会社ダイセル | 硬化性組成物 |
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US9704767B1 (en) | 2015-12-23 | 2017-07-11 | Intel Corporation | Mold compound with reinforced fibers |
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Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3294738A (en) * | 1963-12-23 | 1966-12-27 | Gen Electric | Method for making arylsilsesquioxane ladder polymers |
JPS59109565A (ja) * | 1982-12-16 | 1984-06-25 | Fujitsu Ltd | コ−テイング樹脂溶液およびその製造方法 |
US4835057A (en) * | 1987-03-25 | 1989-05-30 | At&T Bell Laboratories | Glass fibers having organosilsesquioxane coatings and claddings |
CA1327414C (en) * | 1988-06-27 | 1994-03-01 | Junichiro Washiyama | Heat-resistant resin composition |
US5476884A (en) * | 1989-02-20 | 1995-12-19 | Toray Industries, Inc. | Semiconductor device-encapsulating epoxy resin composition containing secondary amino functional coupling agents |
AU627913B2 (en) * | 1989-07-31 | 1992-09-03 | Sumitomo Electric Industries, Ltd. | Polymer clad optical fiber |
JPH06216280A (ja) * | 1993-01-21 | 1994-08-05 | Mitsubishi Electric Corp | 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置 |
US5962067A (en) * | 1997-09-09 | 1999-10-05 | Lucent Technologies Inc. | Method for coating an article with a ladder siloxane polymer and coated article |
JP2000017149A (ja) * | 1998-07-02 | 2000-01-18 | Nippon Kayaku Co Ltd | 封止材用液状エポキシ樹脂組成物及びその硬化物 |
BR9916010A (pt) * | 1998-12-09 | 2001-09-04 | Vantico Ag | Sistema de resina de epóxido hidrófobo |
US6764616B1 (en) * | 1999-11-29 | 2004-07-20 | Huntsman Advanced Materials Americas Inc. | Hydrophobic epoxide resin system |
KR20000063142A (ko) * | 2000-02-17 | 2000-11-06 | 이응찬 | 폴리오르가노실세스키옥산 제조용 출발물질,폴리오르가노실세스키옥산 및 폴리오르가노실세스키옥산제조방법 |
CN1288914A (zh) * | 2000-08-30 | 2001-03-28 | 中国科学院化学研究所 | 一种含复合无机填料的环氧树脂组合物 |
US6706405B2 (en) * | 2002-02-11 | 2004-03-16 | Analytical Services & Materials, Inc. | Composite coating for imparting particel erosion resistance |
US6856745B2 (en) * | 2002-07-02 | 2005-02-15 | Lucent Technologies Inc. | Waveguide and applications therefor |
US20040077778A1 (en) * | 2002-08-07 | 2004-04-22 | Isidor Hazan | One-pack primer sealer compositions for SMC automotive body panels |
US6800373B2 (en) * | 2002-10-07 | 2004-10-05 | General Electric Company | Epoxy resin compositions, solid state devices encapsulated therewith and method |
KR100543092B1 (ko) * | 2002-12-07 | 2006-01-20 | 제일모직주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 |
WO2004074344A1 (ja) * | 2003-02-18 | 2004-09-02 | Sumitomo Bakelite Company Limited | エポキシ樹脂組成物及び半導体装置 |
US7168266B2 (en) * | 2003-03-06 | 2007-01-30 | Lucent Technologies Inc. | Process for making crystalline structures having interconnected pores and high refractive index contrasts |
JP4404050B2 (ja) * | 2003-03-11 | 2010-01-27 | 住友ベークライト株式会社 | 半導体封止用樹脂組成物およびこれを用いた半導体装置 |
US7291684B2 (en) * | 2003-03-11 | 2007-11-06 | Sumitomo Bakelite Co., Ltd. | Resin composition for encapsulating semiconductor chip and semiconductor device therewith |
JP4734832B2 (ja) * | 2003-05-14 | 2011-07-27 | ナガセケムテックス株式会社 | 光素子用封止材 |
US20060154079A1 (en) * | 2004-02-13 | 2006-07-13 | Atsunori Nishikawa | Epoxy resin composition and semiconductor device |
US7160963B2 (en) * | 2004-04-30 | 2007-01-09 | Eastman Kodak Company | Toner fuser member with release layer formed from silsesquioxane-epoxy resin composition |
JP4690737B2 (ja) * | 2005-02-10 | 2011-06-01 | リンテック株式会社 | ラダー型ポリシルセスキオキサンを含む樹脂組成物およびその用途 |
-
2006
- 2006-11-24 KR KR1020060117214A patent/KR100834351B1/ko active IP Right Grant
-
2007
- 2007-11-21 CN CN2007101871809A patent/CN101186802B/zh active Active
- 2007-11-22 JP JP2007302729A patent/JP2008127577A/ja active Pending
- 2007-11-26 US US11/984,933 patent/US20080131702A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010083192A2 (en) * | 2009-01-16 | 2010-07-22 | 3M Innovative Properties Company | Epoxy resin composition |
WO2010083192A3 (en) * | 2009-01-16 | 2010-10-21 | 3M Innovative Properties Company | Epoxy resin composition |
KR101469265B1 (ko) * | 2011-12-26 | 2014-12-04 | 제일모직주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 장치 |
Also Published As
Publication number | Publication date |
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CN101186802B (zh) | 2011-06-08 |
US20080131702A1 (en) | 2008-06-05 |
JP2008127577A (ja) | 2008-06-05 |
CN101186802A (zh) | 2008-05-28 |
KR100834351B1 (ko) | 2008-06-02 |
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