KR20080044050A - 박막 트랜지스터 기판, 그 제조 방법 및 이를 구비하는액정 표시 장치 - Google Patents
박막 트랜지스터 기판, 그 제조 방법 및 이를 구비하는액정 표시 장치 Download PDFInfo
- Publication number
- KR20080044050A KR20080044050A KR1020060112859A KR20060112859A KR20080044050A KR 20080044050 A KR20080044050 A KR 20080044050A KR 1020060112859 A KR1020060112859 A KR 1020060112859A KR 20060112859 A KR20060112859 A KR 20060112859A KR 20080044050 A KR20080044050 A KR 20080044050A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060112859A KR20080044050A (ko) | 2006-11-15 | 2006-11-15 | 박막 트랜지스터 기판, 그 제조 방법 및 이를 구비하는액정 표시 장치 |
| JP2007103001A JP5240749B2 (ja) | 2006-11-15 | 2007-04-10 | 薄膜トランジスター基板、その製造方法及びこれを備える液晶表示装置 |
| US11/940,067 US7995171B2 (en) | 2006-11-15 | 2007-11-14 | Thin film transistor substrate capable of avoiding aperture reduction |
| CN2007103007676A CN101226944B (zh) | 2006-11-15 | 2007-11-15 | 能够避免开口减小的薄膜晶体管基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060112859A KR20080044050A (ko) | 2006-11-15 | 2006-11-15 | 박막 트랜지스터 기판, 그 제조 방법 및 이를 구비하는액정 표시 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20080044050A true KR20080044050A (ko) | 2008-05-20 |
Family
ID=39368864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020060112859A Ceased KR20080044050A (ko) | 2006-11-15 | 2006-11-15 | 박막 트랜지스터 기판, 그 제조 방법 및 이를 구비하는액정 표시 장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7995171B2 (enExample) |
| JP (1) | JP5240749B2 (enExample) |
| KR (1) | KR20080044050A (enExample) |
| CN (1) | CN101226944B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101352878B1 (ko) * | 2009-04-22 | 2014-02-18 | 캐논 가부시끼가이샤 | 반도체장치 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101822563B1 (ko) * | 2010-12-08 | 2018-03-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| CN102981324B (zh) * | 2012-12-10 | 2017-07-14 | 京东方科技集团股份有限公司 | 一种半透半反蓝相液晶显示面板及液晶显示装置 |
| CN103107095A (zh) * | 2013-01-25 | 2013-05-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
| CN104269410A (zh) * | 2014-09-03 | 2015-01-07 | 合肥京东方光电科技有限公司 | 一种阵列基板及显示装置 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6195140B1 (en) * | 1997-07-28 | 2001-02-27 | Sharp Kabushiki Kaisha | Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region |
| JP4196505B2 (ja) * | 1999-12-13 | 2008-12-17 | ソニー株式会社 | 表示装置及びその製造方法とカラーフィルタ |
| JP3892715B2 (ja) * | 2000-12-26 | 2007-03-14 | 株式会社東芝 | 液晶表示装置 |
| JP4603190B2 (ja) | 2001-04-16 | 2010-12-22 | 株式会社日立製作所 | 液晶表示装置 |
| JP4050119B2 (ja) * | 2001-10-02 | 2008-02-20 | シャープ株式会社 | 液晶表示装置 |
| KR20030058012A (ko) | 2001-12-29 | 2003-07-07 | 엘지.필립스 엘시디 주식회사 | 반투과형 액정 표시 장치 |
| KR100752214B1 (ko) * | 2003-10-16 | 2007-08-28 | 엘지.필립스 엘시디 주식회사 | 반투과형 액정표시소자의 제조방법 |
| KR100617031B1 (ko) * | 2003-12-30 | 2006-08-30 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치 및 그 제조방법 |
| US7391489B2 (en) * | 2004-03-09 | 2008-06-24 | Sharp Kabushiki Kaishia | Liquid crystal display device |
| JP4390595B2 (ja) * | 2004-03-09 | 2009-12-24 | シャープ株式会社 | 液晶表示装置 |
| JP3915792B2 (ja) | 2004-03-12 | 2007-05-16 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
| JP4738055B2 (ja) * | 2004-05-21 | 2011-08-03 | 三洋電機株式会社 | 液晶表示装置 |
| JP4873882B2 (ja) | 2004-05-21 | 2012-02-08 | 三洋電機株式会社 | 液晶表示装置 |
| JP3953059B2 (ja) * | 2004-09-01 | 2007-08-01 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
| JP4016977B2 (ja) * | 2004-09-03 | 2007-12-05 | セイコーエプソン株式会社 | 液晶表示装置、電子機器 |
| KR20060034802A (ko) | 2004-10-19 | 2006-04-26 | 삼성전자주식회사 | 반투과형 액정 표시 장치 |
| JP4427436B2 (ja) | 2004-11-25 | 2010-03-10 | シャープ株式会社 | 液晶表示装置 |
| JP4578958B2 (ja) | 2004-12-16 | 2010-11-10 | シャープ株式会社 | 液晶表示装置 |
| KR101151799B1 (ko) * | 2005-11-09 | 2012-06-01 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
| JP2007133293A (ja) * | 2005-11-14 | 2007-05-31 | Epson Imaging Devices Corp | 液晶装置及び電子機器 |
| JP4341617B2 (ja) | 2005-12-02 | 2009-10-07 | セイコーエプソン株式会社 | 液晶表示装置、及び電子機器 |
-
2006
- 2006-11-15 KR KR1020060112859A patent/KR20080044050A/ko not_active Ceased
-
2007
- 2007-04-10 JP JP2007103001A patent/JP5240749B2/ja active Active
- 2007-11-14 US US11/940,067 patent/US7995171B2/en active Active
- 2007-11-15 CN CN2007103007676A patent/CN101226944B/zh active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101352878B1 (ko) * | 2009-04-22 | 2014-02-18 | 캐논 가부시끼가이샤 | 반도체장치 |
| US8653541B2 (en) | 2009-04-22 | 2014-02-18 | Canon Kabushiki Kaisha | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008122904A (ja) | 2008-05-29 |
| CN101226944B (zh) | 2013-07-03 |
| US7995171B2 (en) | 2011-08-09 |
| US20080111956A1 (en) | 2008-05-15 |
| CN101226944A (zh) | 2008-07-23 |
| JP5240749B2 (ja) | 2013-07-17 |
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