KR20080022201A - 노광장치 및 디바이스의 제조방법 - Google Patents
노광장치 및 디바이스의 제조방법 Download PDFInfo
- Publication number
- KR20080022201A KR20080022201A KR1020087001419A KR20087001419A KR20080022201A KR 20080022201 A KR20080022201 A KR 20080022201A KR 1020087001419 A KR1020087001419 A KR 1020087001419A KR 20087001419 A KR20087001419 A KR 20087001419A KR 20080022201 A KR20080022201 A KR 20080022201A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- liquid
- supply port
- gas supply
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000007789 gas Substances 0.000 claims abstract description 459
- 239000007788 liquid Substances 0.000 claims abstract description 195
- 230000003287 optical effect Effects 0.000 claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000011084 recovery Methods 0.000 claims description 124
- 238000000034 method Methods 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- 238000005259 measurement Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 238000007654 immersion Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000009834 vaporization Methods 0.000 description 8
- 230000008016 vaporization Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 230000008859 change Effects 0.000 description 3
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- 230000005494 condensation Effects 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005302577 | 2005-10-18 | ||
| JPJP-P-2005-00302577 | 2005-10-18 | ||
| JPJP-P-2006-00219032 | 2006-08-10 | ||
| JP2006219032A JP2007142366A (ja) | 2005-10-18 | 2006-08-10 | 露光装置及びデバイス製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20080022201A true KR20080022201A (ko) | 2008-03-10 |
Family
ID=37962610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087001419A Abandoned KR20080022201A (ko) | 2005-10-18 | 2006-10-17 | 노광장치 및 디바이스의 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7907251B2 (enExample) |
| JP (1) | JP2007142366A (enExample) |
| KR (1) | KR20080022201A (enExample) |
| TW (1) | TW200731335A (enExample) |
| WO (1) | WO2007046523A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101256403B1 (ko) * | 2010-04-22 | 2013-04-25 | 에이에스엠엘 네델란즈 비.브이. | 유체 핸들링 구조, 리소그래피 장치 및 디바이스 제조 방법 |
| KR101476351B1 (ko) * | 2011-10-07 | 2014-12-24 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 리소그래피 장치의 구성요소를 냉각하는 방법 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005104195A1 (ja) | 2004-04-19 | 2005-11-03 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| EP2023378B1 (en) | 2006-05-10 | 2013-03-13 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| US8289497B2 (en) | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
| NL1036631A1 (nl) | 2008-03-24 | 2009-09-25 | Asml Netherlands Bv | Immersion Lithographic Apparatus and Device Manufacturing Method. |
| WO2010103822A1 (ja) * | 2009-03-10 | 2010-09-16 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| JP5016705B2 (ja) | 2009-06-09 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体ハンドリング構造 |
| NL2005089A (nl) * | 2009-09-23 | 2011-03-28 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
| NL2005655A (en) | 2009-12-09 | 2011-06-14 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
| NL2006054A (en) * | 2010-02-09 | 2011-08-10 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
| NL2007182A (en) * | 2010-08-23 | 2012-02-27 | Asml Netherlands Bv | Fluid handling structure, module for an immersion lithographic apparatus, lithographic apparatus and device manufacturing method. |
| EP2423749B1 (en) | 2010-08-24 | 2013-09-11 | ASML Netherlands BV | A lithographic apparatus and device manufacturing method |
| NL2007453A (en) * | 2010-10-18 | 2012-04-19 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| NL2008199A (en) | 2011-02-28 | 2012-08-29 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| NL2008979A (en) | 2011-07-11 | 2013-01-14 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| US9256137B2 (en) * | 2011-08-25 | 2016-02-09 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| US20130050666A1 (en) * | 2011-08-26 | 2013-02-28 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| NL2009271A (en) * | 2011-09-15 | 2013-03-18 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| NL2009899A (en) * | 2011-12-20 | 2013-06-24 | Asml Netherlands Bv | A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method. |
| JP2017538159A (ja) | 2014-12-19 | 2017-12-21 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体取扱構造、リソグラフィ装置及びデバイス製造方法 |
| JP6503606B2 (ja) * | 2015-10-29 | 2019-04-24 | 国立研究開発法人産業技術総合研究所 | インプリント装置 |
| KR102328077B1 (ko) | 2016-12-14 | 2021-11-17 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조 방법 |
| US10503085B2 (en) * | 2017-11-16 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography apparatus and method |
| JP7166089B2 (ja) * | 2018-06-29 | 2022-11-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システムおよび基板処理方法 |
| CN114402263A (zh) | 2019-09-13 | 2022-04-26 | Asml荷兰有限公司 | 流体处置系统和光刻设备 |
| CN112684665B (zh) * | 2020-12-25 | 2024-06-25 | 浙江启尔机电技术有限公司 | 一种浸液供给回收装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE60326384D1 (de) | 2002-12-13 | 2009-04-09 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
| KR101345474B1 (ko) * | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4488004B2 (ja) * | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
| EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005183744A (ja) | 2003-12-22 | 2005-07-07 | Nikon Corp | 露光装置及びデバイス製造方法 |
| EP1706793B1 (en) * | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
| JP5040646B2 (ja) | 2005-03-23 | 2012-10-03 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
-
2006
- 2006-08-10 JP JP2006219032A patent/JP2007142366A/ja not_active Withdrawn
- 2006-10-17 US US11/994,240 patent/US7907251B2/en not_active Expired - Fee Related
- 2006-10-17 KR KR1020087001419A patent/KR20080022201A/ko not_active Abandoned
- 2006-10-17 WO PCT/JP2006/321001 patent/WO2007046523A1/en not_active Ceased
- 2006-10-18 TW TW095138405A patent/TW200731335A/zh unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101256403B1 (ko) * | 2010-04-22 | 2013-04-25 | 에이에스엠엘 네델란즈 비.브이. | 유체 핸들링 구조, 리소그래피 장치 및 디바이스 제조 방법 |
| US9256136B2 (en) | 2010-04-22 | 2016-02-09 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply |
| US9846372B2 (en) | 2010-04-22 | 2017-12-19 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| US10209624B2 (en) | 2010-04-22 | 2019-02-19 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| US10620544B2 (en) | 2010-04-22 | 2020-04-14 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| KR101476351B1 (ko) * | 2011-10-07 | 2014-12-24 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 리소그래피 장치의 구성요소를 냉각하는 방법 |
| US9811007B2 (en) | 2011-10-07 | 2017-11-07 | Asml Netherlands B.V. | Lithographic apparatus and method of cooling a component in a lithographic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007046523A1 (en) | 2007-04-26 |
| US7907251B2 (en) | 2011-03-15 |
| TW200731335A (en) | 2007-08-16 |
| US20090122283A1 (en) | 2009-05-14 |
| JP2007142366A (ja) | 2007-06-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0105 | International application |
Patent event date: 20080118 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20080118 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20090421 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20090909 |
|
| NORF | Unpaid initial registration fee | ||
| PC1904 | Unpaid initial registration fee |