KR20080008389A - 플라즈마 처리 장치 - Google Patents
플라즈마 처리 장치 Download PDFInfo
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- KR20080008389A KR20080008389A KR1020077027892A KR20077027892A KR20080008389A KR 20080008389 A KR20080008389 A KR 20080008389A KR 1020077027892 A KR1020077027892 A KR 1020077027892A KR 20077027892 A KR20077027892 A KR 20077027892A KR 20080008389 A KR20080008389 A KR 20080008389A
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- processing apparatus
- plasma processing
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- 238000009826 distribution Methods 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 79
- 235000012431 wafers Nutrition 0.000 description 30
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- 238000011282 treatment Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
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- 238000005121 nitriding Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- 229920001410 Microfiber Polymers 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 229910010293 ceramic material Inorganic materials 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (11)
- 진공배기 가능한 처리 용기와, 상기 처리 용기내에서 피처리체를 탑재하는 탑재대와, 상기 처리 용기의 상부에 접합되고, 상기 처리 용기내를 밀폐하는 덮개부를 구비한 플라즈마 처리 장치에 있어서,상기 처리 용기는, 상기 탑재대를 둘러싸는 제 1 하우징과, 상기 제 1 하우징과 상기 덮개부 사이에 착탈 가능하게 개재 배치되는 제 2 하우징을 구비한플라즈마 처리 장치.
- 진공배기 가능한 처리 용기와, 상기 처리 용기내에서 피처리체를 탑재하는 탑재대와, 상기 처리 용기의 상부에 접합되고, 상기 처리 용기내에 전자파를 도입하는 전자파 도입부와, 상기 처리 용기내에 플라즈마 여기용의 가스를 도입하는 가스 도입부를 구비한 플라즈마 처리 장치에 있어서,상기 처리 용기는, 상기 탑재대를 둘러싸는 제 1 하우징과, 상기 제 1 하우징과 상기 전자파 도입부 사이에 착탈 가능하게 개재 배치되는 제 2 하우징을 구비한플라즈마 처리 장치.
- 제 2 항에 있어서,상기 제 2 하우징은 미리 준비된 높이 및/또는 내경이 상이한 복수의 통형상 부재중에서, 피처리체의 크기에 따라 선택되어 장착된 것인플라즈마 처리 장치.
- 제 2 항에 있어서,상기 제 2 하우징은 미리 준비된 높이 및/또는 내경이 상이한 복수의 통형상 부재중에서, 플라즈마 처리의 내용에 따라 선택되어 장착된 것인플라즈마 처리 장치.
- 제 2 항에 있어서,상기 전자파 도입부는 피처리체의 크기에 따라 그 크기가 선택되어 장착된 것인플라즈마 처리 장치.
- 제 2 항에 있어서,상기 제 2 하우징의 복수 개소에 상기 가스 도입부를 마련한플라즈마 처리 장치.
- 제 6 항에 있어서,상기 가스 도입부는, 상기 처리 용기내의 공간을 향해서 개구된 가스 도입구와, 상기 가스 도입구에 접속한 가스 도입로를 구비하고 있고,상기 가스 도입로는 가스를 복수의 상기 가스 도입부에 균등하게 분배하기 위해 상기 제 1 하우징의 상단과 상기 제 2 하우징의 하단의 경계에 형성된 가스 분배 수단에 접속되어 있는플라즈마 처리 장치.
- 제 7 항에 있어서,상기 가스 분배 수단은 상기 제 1 하우징의 상단에 형성된 단차부와, 상기 제 2 하우징의 하단에 형성된 단차부 사이의 간극인플라즈마 처리 장치.
- 제 2 항에 있어서,상기 전자파는 마이크로파이며, 상기 전자파 도입부는 마이크로파를 도입하기 위한 안테나를 구비하고 있는플라즈마 처리 장치.
- 제 9 항에 있어서,상기 안테나는 복수의 슬롯 구멍이 형성된 평면 안테나인플라즈마 처리 장치.
- 진공배기 가능한 처리 용기와, 상기 처리 용기내에서 피처리체를 탑재하는 탑재대와, 상기 처리 용기의 상부에 접합되고, 상기 처리 용기내를 밀폐하는 덮개부와, 상기 탑재대를 둘러싸는 제 1 하우징을 구비한 플라즈마 처리 장치에 있어서,상기 제 1 하우징과 상기 덮개부 사이에 제 2 하우징이 장착 가능하게 구성되어 있는 동시에, 상기 제 2 하우징을 분리한 상태에서 상기 제 1 하우징과 상기 덮개부를 직접 접합할 수 있도록 구성된플라즈마 처리 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00157840 | 2005-05-30 | ||
JP2005157840A JP4624856B2 (ja) | 2005-05-30 | 2005-05-30 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080008389A true KR20080008389A (ko) | 2008-01-23 |
KR101002513B1 KR101002513B1 (ko) | 2010-12-17 |
Family
ID=37481520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077027892A KR101002513B1 (ko) | 2005-05-30 | 2006-05-29 | 플라즈마 처리 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8377254B2 (ko) |
JP (1) | JP4624856B2 (ko) |
KR (1) | KR101002513B1 (ko) |
CN (1) | CN100536082C (ko) |
TW (1) | TWI409357B (ko) |
WO (1) | WO2006129591A1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7942969B2 (en) * | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8039052B2 (en) * | 2007-09-06 | 2011-10-18 | Intermolecular, Inc. | Multi-region processing system and heads |
JP5058727B2 (ja) * | 2007-09-06 | 2012-10-24 | 東京エレクトロン株式会社 | 天板構造及びこれを用いたプラズマ処理装置 |
JP5475261B2 (ja) * | 2008-03-31 | 2014-04-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8242405B2 (en) * | 2008-07-15 | 2012-08-14 | Tokyo Electron Limited | Microwave plasma processing apparatus and method for producing cooling jacket |
JP5357486B2 (ja) * | 2008-09-30 | 2013-12-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5837793B2 (ja) | 2010-11-30 | 2015-12-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板処理装置のバッフル構造 |
US20130220975A1 (en) * | 2012-02-27 | 2013-08-29 | Rajinder Dhindsa | Hybrid plasma processing systems |
CN103871902A (zh) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 半导体处理工艺及半导体器件的制备方法 |
TWM503056U (zh) * | 2014-07-24 | 2015-06-11 | Wen-Hsin Chiang | 用於電漿反應裝置之襯套單元 |
US20170278679A1 (en) * | 2016-03-24 | 2017-09-28 | Lam Research Corporation | Method and apparatus for controlling process within wafer uniformity |
FR3060024B1 (fr) * | 2016-12-09 | 2019-05-31 | Diam Concept | Reacteur modulaire pour le depot assiste par plasma microonde |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US5885358A (en) * | 1996-07-09 | 1999-03-23 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US5653808A (en) * | 1996-08-07 | 1997-08-05 | Macleish; Joseph H. | Gas injection system for CVD reactors |
JPH10134995A (ja) * | 1996-10-28 | 1998-05-22 | Toshiba Corp | プラズマ処理装置及びプラズマ処理方法 |
US6059922A (en) * | 1996-11-08 | 2000-05-09 | Kabushiki Kaisha Toshiba | Plasma processing apparatus and a plasma processing method |
WO1998033362A1 (fr) | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Dispositif a plasma |
JP2925535B2 (ja) * | 1997-05-22 | 1999-07-28 | キヤノン株式会社 | 環状導波路を有するマイクロ波供給器及びそれを備えたプラズマ処理装置及び処理方法 |
JP3662101B2 (ja) * | 1997-10-27 | 2005-06-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4136137B2 (ja) * | 1998-11-26 | 2008-08-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3205312B2 (ja) | 1999-03-17 | 2001-09-04 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理装置のメンテナンス方法 |
JP3422292B2 (ja) * | 1999-08-19 | 2003-06-30 | 株式会社日立製作所 | プラズマ処理装置 |
WO2002093605A2 (en) * | 2001-05-17 | 2002-11-21 | Tokyo Electron Limited | Cylinder-based plasma processing system |
JP3861036B2 (ja) * | 2002-08-09 | 2006-12-20 | 三菱重工業株式会社 | プラズマcvd装置 |
-
2005
- 2005-05-30 JP JP2005157840A patent/JP4624856B2/ja active Active
-
2006
- 2006-05-29 WO PCT/JP2006/310644 patent/WO2006129591A1/ja active Application Filing
- 2006-05-29 KR KR1020077027892A patent/KR101002513B1/ko active IP Right Grant
- 2006-05-29 US US11/916,179 patent/US8377254B2/en active Active
- 2006-05-29 CN CNB2006800193351A patent/CN100536082C/zh active Active
- 2006-05-30 TW TW095119209A patent/TWI409357B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2006129591A1 (ja) | 2006-12-07 |
CN101189707A (zh) | 2008-05-28 |
CN100536082C (zh) | 2009-09-02 |
US8377254B2 (en) | 2013-02-19 |
US20100012275A1 (en) | 2010-01-21 |
TW200702484A (en) | 2007-01-16 |
JP2006332554A (ja) | 2006-12-07 |
JP4624856B2 (ja) | 2011-02-02 |
TWI409357B (zh) | 2013-09-21 |
KR101002513B1 (ko) | 2010-12-17 |
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