KR20070110803A - 마스크 블랭크 및 포토마스크 - Google Patents

마스크 블랭크 및 포토마스크 Download PDF

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Publication number
KR20070110803A
KR20070110803A KR1020070047073A KR20070047073A KR20070110803A KR 20070110803 A KR20070110803 A KR 20070110803A KR 1020070047073 A KR1020070047073 A KR 1020070047073A KR 20070047073 A KR20070047073 A KR 20070047073A KR 20070110803 A KR20070110803 A KR 20070110803A
Authority
KR
South Korea
Prior art keywords
film
mask
resist
pattern
light shielding
Prior art date
Application number
KR1020070047073A
Other languages
English (en)
Korean (ko)
Inventor
마사루 미쯔이
미찌아끼 사노
Original Assignee
호야 가부시키가이샤
호야 일렉트로닉스 말레이지아 센드리안 베르하드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤, 호야 일렉트로닉스 말레이지아 센드리안 베르하드 filed Critical 호야 가부시키가이샤
Publication of KR20070110803A publication Critical patent/KR20070110803A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020070047073A 2006-05-15 2007-05-15 마스크 블랭크 및 포토마스크 KR20070110803A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00134733 2006-05-15
JP2006134733 2006-05-15
JPJP-P-2007-00124185 2007-05-09
JP2007124185A JP5004283B2 (ja) 2006-05-15 2007-05-09 Ｆｐｄデバイス製造用マスクブランク、ｆｐｄデバイス製造用マスクブランクの設計方法、及び、ｆｐｄデバイス製造用マスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110079215A Division KR101401248B1 (ko) 2006-05-15 2011-08-09 마스크 블랭크 및 포토마스크

Publications (1)

Publication Number Publication Date
KR20070110803A true KR20070110803A (ko) 2007-11-20

Family

ID=38933794

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020070047073A KR20070110803A (ko) 2006-05-15 2007-05-15 마스크 블랭크 및 포토마스크
KR1020110079215A KR101401248B1 (ko) 2006-05-15 2011-08-09 마스크 블랭크 및 포토마스크

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110079215A KR101401248B1 (ko) 2006-05-15 2011-08-09 마스크 블랭크 및 포토마스크

Country Status (3)

Country Link
JP (1) JP5004283B2 (zh)
KR (2) KR20070110803A (zh)
TW (1) TWI402613B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190008110A (ko) * 2017-07-14 2019-01-23 호야 가부시키가이샤 포토마스크 블랭크 및 그 제조 방법, 포토마스크의 제조 방법, 그리고 표시 장치의 제조 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6594742B2 (ja) * 2014-11-20 2019-10-23 Ｈｏｙａ株式会社 フォトマスクブランク及びそれを用いたフォトマスクの製造方法、並びに表示装置の製造方法
JP6625692B2 (ja) * 2017-07-14 2019-12-25 Hoya株式会社 フォトマスクブランクおよびその製造方法、フォトマスクの製造方法、並びに表示装置の製造方法
CN109960105A (zh) * 2017-12-26 2019-07-02 Hoya株式会社 光掩模坯料及光掩模的制造方法、显示装置的制造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7463183B2 (ja) * 2019-06-26 2024-04-08 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970008372A (ko) * 1995-07-31 1997-02-24 김광호 반도체장치의 미세 패턴 형성방법
KR0183601B1 (ko) * 1996-07-24 1999-04-15 대우전자주식회사 헤드 드럼 조립체 고정지그
JPH11125896A (ja) * 1997-08-19 1999-05-11 Toppan Printing Co Ltd フォトマスクブランクス及びフォトマスク
EP1022614B1 (en) * 1998-07-31 2012-11-14 Hoya Corporation Photomask blank, photomask, methods of manufacturing the same, and method of forming micropattern
KR100484517B1 (ko) * 2000-12-19 2005-04-20 호야 가부시키가이샤 그레이톤 마스크 및 그 제조 방법
US6605394B2 (en) * 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
JP2003195483A (ja) * 2001-12-28 2003-07-09 Hoya Corp フォトマスクブランク、フォトマスク、及びそれらの製造方法
KR100472115B1 (ko) * 2002-07-16 2005-03-10 주식회사 에스앤에스텍 블랭크 마스크 및 그의 제조 방법
CN100580549C (zh) * 2002-12-03 2010-01-13 Hoya株式会社 光掩模坯料和光掩膜
JP4335729B2 (ja) * 2004-03-31 2009-09-30 信越化学工業株式会社 フォトマスクブランク及びフォトマスクブランクの反射率調整方法
JP4440688B2 (ja) * 2004-03-31 2010-03-24 Ｈｏｙａ株式会社 レーザ描画装置、レーザ描画方法及びフォトマスクの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190008110A (ko) * 2017-07-14 2019-01-23 호야 가부시키가이샤 포토마스크 블랭크 및 그 제조 방법, 포토마스크의 제조 방법, 그리고 표시 장치의 제조 방법
KR20210092706A (ko) * 2017-07-14 2021-07-26 호야 가부시키가이샤 포토마스크 블랭크 및 그 제조 방법, 포토마스크의 제조 방법, 그리고 표시 장치의 제조 방법

Also Published As

Publication number Publication date
TWI402613B (zh) 2013-07-21
JP2007334316A (ja) 2007-12-27
TW200809393A (en) 2008-02-16
KR101401248B1 (ko) 2014-05-29
JP5004283B2 (ja) 2012-08-22
KR20110103917A (ko) 2011-09-21

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Effective date: 20131220