KR20070045895A - 발광 다이오드의 제조 방법 - Google Patents
발광 다이오드의 제조 방법 Download PDFInfo
- Publication number
- KR20070045895A KR20070045895A KR1020060042428A KR20060042428A KR20070045895A KR 20070045895 A KR20070045895 A KR 20070045895A KR 1020060042428 A KR1020060042428 A KR 1020060042428A KR 20060042428 A KR20060042428 A KR 20060042428A KR 20070045895 A KR20070045895 A KR 20070045895A
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- Prior art keywords
- gelatin
- light emitting
- fluorescent
- emitting diode
- manufacturing
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title abstract description 12
- 108010010803 Gelatin Proteins 0.000 claims abstract description 60
- 229920000159 gelatin Polymers 0.000 claims abstract description 60
- 239000008273 gelatin Substances 0.000 claims abstract description 60
- 235000019322 gelatine Nutrition 0.000 claims abstract description 60
- 235000011852 gelatine desserts Nutrition 0.000 claims abstract description 60
- 239000013078 crystal Substances 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims abstract description 21
- 239000007787 solid Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims abstract 5
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims description 3
- 229940097275 indigo Drugs 0.000 claims description 3
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000005266 casting Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims (5)
- 발광 다이오드의 제조 방법으로서,a. 오목구멍이 구비된 적재 받침부의 캐리어가 제공되고, 캐리어 중에 고체결정 젤라틴이 덮혀 설치되는 단계와;b. 발광 결정편을 상기 고체결정 젤라틴 중에 고정시켜, 고체결정 젤라틴을 불에 쪼여 결합시키는 단계와;c. 발광 결정편과 전극단부 상단부를 연결하여 진행시키는 단계와;d. 형광분말과 젤라틴을 혼합하여 형광 젤라틴을 만들고, 상기 형광 젤라틴을 분사방식을 이용하여 발광 결정편 주변 부위에 덮는 단계와;e. 최후로 형광 젤라틴을 불에 쪼여 결합시키는 단계를 포함하는 발광 다이오드 제조 방법.
- 청구항 1에 있어서, 상기 분사방식은 노즐이 이용되어 형광 젤라틴을 발광 결정편 주변 부위에 분사시키는 것을 특징으로 하는 발광 다이오드의 제조 방법.
- 청구항 1에 있어서, 상기 형광 젤라틴은 과립이 이용되어 비교적 작은 형광분말과 젤라틴을 혼합하여 만들어지는 것을 특징으로 하는 발광 다이오드의 제조 방법.
- 청구항 1에 있어서, 금속선이 이용되어 남색 발광 결정편과 전극단부의 상단부가 연결되어 구성하는 것을 특징으로 하는 발광 다이오드의 제조 방법.
- 청구항 1에 있어서, 투명 커버가 이용되어 발광 다이오드가 봉장되는 것을 특징으로 하는 발광 다이오드의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094137874A TW200717856A (en) | 2005-10-28 | 2005-10-28 | Method of fabricating light emitting diode |
TW094137874 | 2005-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070045895A true KR20070045895A (ko) | 2007-05-02 |
KR100733198B1 KR100733198B1 (ko) | 2007-06-28 |
Family
ID=37912940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060042428A KR100733198B1 (ko) | 2005-10-28 | 2006-05-11 | 발광 다이오드의 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070099316A1 (ko) |
JP (1) | JP2007123822A (ko) |
KR (1) | KR100733198B1 (ko) |
DE (1) | DE102006018223A1 (ko) |
TW (1) | TW200717856A (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201015743A (en) * | 2008-10-01 | 2010-04-16 | Formosa Epitaxy Inc | LED and manufacturing method thereof |
KR101049483B1 (ko) * | 2009-05-20 | 2011-07-15 | 주식회사 루멘스 | 발광 다이오드 패키지 제조 장치 및 이를 이용한 발광 다이오드 패키지 제조 방법 |
TW201115653A (en) * | 2009-10-29 | 2011-05-01 | Sleek Co Ltd | Package method and product of hollow-structured surface-mount electronic device |
KR100986468B1 (ko) | 2009-11-19 | 2010-10-08 | 엘지이노텍 주식회사 | 렌즈 및 렌즈를 갖는 발광 장치 |
KR100986380B1 (ko) | 2009-11-20 | 2010-10-08 | 엘지이노텍 주식회사 | 발광 장치 |
TW201201419A (en) * | 2010-06-29 | 2012-01-01 | Semileds Optoelectronics Co | Wafer-type light emitting device having precisely coated wavelength-converting layer |
CN103311400A (zh) | 2012-03-15 | 2013-09-18 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
CN105914132B (zh) * | 2016-03-14 | 2018-11-16 | 王志敏 | 一种贴片二极管的上胶工艺 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3309939B2 (ja) * | 1994-09-09 | 2002-07-29 | 日亜化学工業株式会社 | 発光ダイオード |
CN1182524A (zh) * | 1995-04-25 | 1998-05-20 | 西铁城时计株式会社 | 有机场致发光器件 |
US6299498B1 (en) * | 1999-10-27 | 2001-10-09 | Shin Lung Liu | White-light emitting diode structure and manufacturing method |
JP2003008073A (ja) * | 2001-06-26 | 2003-01-10 | Matsushita Electric Works Ltd | 発光素子 |
JP3756930B2 (ja) * | 2001-09-03 | 2006-03-22 | 松下電器産業株式会社 | 半導体発光デバイスの製造方法 |
JPWO2003034508A1 (ja) * | 2001-10-12 | 2005-02-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2005175292A (ja) * | 2003-12-12 | 2005-06-30 | Toshiba Corp | 半導体発光装置およびその製造方法 |
-
2005
- 2005-10-28 TW TW094137874A patent/TW200717856A/zh unknown
-
2006
- 2006-04-17 JP JP2006113284A patent/JP2007123822A/ja active Pending
- 2006-04-19 DE DE102006018223A patent/DE102006018223A1/de not_active Ceased
- 2006-05-01 US US11/414,313 patent/US20070099316A1/en not_active Abandoned
- 2006-05-11 KR KR1020060042428A patent/KR100733198B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DE102006018223A1 (de) | 2007-05-03 |
JP2007123822A (ja) | 2007-05-17 |
KR100733198B1 (ko) | 2007-06-28 |
US20070099316A1 (en) | 2007-05-03 |
TW200717856A (en) | 2007-05-01 |
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