KR20070002623A - 반도체소자의 결함 검출방법 - Google Patents
반도체소자의 결함 검출방법 Download PDFInfo
- Publication number
- KR20070002623A KR20070002623A KR1020050058233A KR20050058233A KR20070002623A KR 20070002623 A KR20070002623 A KR 20070002623A KR 1020050058233 A KR1020050058233 A KR 1020050058233A KR 20050058233 A KR20050058233 A KR 20050058233A KR 20070002623 A KR20070002623 A KR 20070002623A
- Authority
- KR
- South Korea
- Prior art keywords
- bit line
- semiconductor device
- cell
- defect
- leakage current
- Prior art date
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0401—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals in embedded memories
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (6)
- 셀내의 특정 비트라인에 소오스/드레인 접합을 관통하는 누설전류 통로가 존재하는 불량 비트라인을 공유하는 비트라인 전체에 누설전류를 흘려 전기적 특성 차이를 검출하는 것을 특징으로 하는 반도체소자의 결함 검출방법.
- 제 1 항에 있어서,상기 불량 비트라인을 공유하는 모든 워드라인의 어드레스를 증가시키며 셀의 I-V 특성을 측정하는 것을 특징으로 하는 반도체소자의 결함 검출방법.
- 제 1 항에 있어서,상기 불량 비트라인을 공유하는 모든 셀 중에서 게이트 바이어스에 의존적인 셀을 찾는 것을 특징으로 하는 반도체소자의 결함 검출방법.
- 제 1 항에 있어서,상기 불량 비트라인을 공유하는 모든 셀에 드레인 스트레스를 주는 것을 특징으로 하는 반도체소자의 결함 검출방법.
- 제 4 항에 있어서,상기 불량 비트라인을 공유하는 모든 셀 중에서 드레인 스트레스에 취약한 셀을 찾는 것을 특징으로 하는 반도체소자의 결함 검출방법.
- 제 4 항에 있어서,상기 반도체소자의 결함을 검출하기 위한 드레인 스트레스 인가 공정은 ( 해당 섹터의 1펄스 폭 ) × ( 총 워드라인 수 ) × ( 최대 펄스 반복회수 )를 기준으로 인가 시간을 결정하여 실시하는 것을 특징으로 하는 반도체소자의 결함 검출방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050058233A KR100695991B1 (ko) | 2005-06-30 | 2005-06-30 | 반도체소자의 결함 검출방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050058233A KR100695991B1 (ko) | 2005-06-30 | 2005-06-30 | 반도체소자의 결함 검출방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070002623A true KR20070002623A (ko) | 2007-01-05 |
KR100695991B1 KR100695991B1 (ko) | 2007-03-15 |
Family
ID=37869588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020050058233A KR100695991B1 (ko) | 2005-06-30 | 2005-06-30 | 반도체소자의 결함 검출방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100695991B1 (ko) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0157292B1 (ko) * | 1995-10-31 | 1999-02-18 | 김광호 | 비트라인에 스트레스전압을 인가하는 웨이퍼번인 테스트방법 |
KR20010003409A (ko) * | 1999-06-23 | 2001-01-15 | 김영환 | 플래쉬 메모리 소자의 누설전류 측정 방법 |
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2005
- 2005-06-30 KR KR1020050058233A patent/KR100695991B1/ko active IP Right Grant
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Publication number | Publication date |
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KR100695991B1 (ko) | 2007-03-15 |
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