KR20060074159A - Epoxy resin composition for encapsulating semiconductor device - Google Patents
Epoxy resin composition for encapsulating semiconductor device Download PDFInfo
- Publication number
- KR20060074159A KR20060074159A KR1020040112806A KR20040112806A KR20060074159A KR 20060074159 A KR20060074159 A KR 20060074159A KR 1020040112806 A KR1020040112806 A KR 1020040112806A KR 20040112806 A KR20040112806 A KR 20040112806A KR 20060074159 A KR20060074159 A KR 20060074159A
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- weight
- resin composition
- formula
- phenol
- Prior art date
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 64
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 64
- 239000000203 mixture Substances 0.000 title claims abstract description 55
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000005011 phenolic resin Substances 0.000 claims abstract description 28
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical class C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 239000011256 inorganic filler Substances 0.000 claims abstract description 7
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 7
- -1 phenol compound Chemical class 0.000 claims abstract description 6
- 235000010290 biphenyl Nutrition 0.000 claims abstract description 4
- 239000004305 biphenyl Substances 0.000 claims abstract description 4
- 238000006266 etherification reaction Methods 0.000 claims abstract description 4
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims abstract description 4
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 claims abstract description 4
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 8
- 229920003986 novolac Polymers 0.000 claims description 7
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- CIPOCPJRYUFXLL-UHFFFAOYSA-N 2,3,4-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C(CN(C)C)=C1CN(C)C CIPOCPJRYUFXLL-UHFFFAOYSA-N 0.000 claims description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 229920001400 block copolymer Polymers 0.000 claims description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 claims description 2
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 claims description 2
- 150000002460 imidazoles Chemical class 0.000 claims description 2
- 150000002989 phenols Chemical class 0.000 claims description 2
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims 1
- 229960002887 deanol Drugs 0.000 claims 1
- 239000004843 novolac epoxy resin Substances 0.000 claims 1
- 150000003003 phosphines Chemical class 0.000 claims 1
- 150000003512 tertiary amines Chemical class 0.000 claims 1
- 239000003063 flame retardant Substances 0.000 abstract description 17
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract description 9
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000004593 Epoxy Substances 0.000 abstract description 6
- 229910052736 halogen Inorganic materials 0.000 abstract description 6
- 150000002367 halogens Chemical class 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000012661 block copolymerization Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000008393 encapsulating agent Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229920002545 silicone oil Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 231100000357 carcinogen Toxicity 0.000 description 1
- 239000003183 carcinogenic agent Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000012796 inorganic flame retardant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3209—Epoxy compounds containing three or more epoxy groups obtained by polymerisation of unsaturated mono-epoxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/13—Phenols; Phenolates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/10—Epoxy resins modified by unsaturated compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/66—Substances characterised by their function in the composition
- C08L2666/72—Fillers; Inorganic pigments; Reinforcing additives
Landscapes
- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
Abstract
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 비페닐 유도체를 포함하는 노블락 구조의 페놀류 화합물과 4,4'-디히드록시 비페닐의 혼합물을 글리시딜 에테르화시켜 생성되는 변성 에폭시 수지(1) 4.3~11.8 중량%; 경화제로서 비페닐 유도체를 포함하는 페놀 수지와 트리페닐 메탄형 페놀수지의 블록 공중합형 페놀 수지(2) 1.9~8.3 중량%; 경화촉진제(3) 0.1~0.5 중량%; 및 무기 충전제(4) 73~92 중량%;를 포함하는 것을 특징으로 한다. 본 발명에 따른 반도체 소자 밀봉용 에폭시 수지 조성물에 의하면, 반도체 소자 패키지 성형시 고유동 특성을 나타내며, 수분의 흡수가 낮고 내열성이 우수할 뿐만 아니라 인체나 기기에 유해한 할로겐계, 삼산화 안티몬 등의 난연제를 함유하지 않으면서도 난연성, 신뢰성 및 성형성이 우수한 특징이 있다.The present invention relates to an epoxy resin composition for sealing semiconductor devices, wherein the modified epoxy resin produced by glycidyl etherification of a mixture of a phenol compound having a noblock structure containing a biphenyl derivative and a 4,4'-dihydroxy biphenyl is formed. (1) 4.3-11.8 wt%; 1.9 to 8.3 wt% of a block copolymerized phenol resin (2) of a phenol resin containing a biphenyl derivative as a curing agent and a triphenyl methane type phenol resin; Curing accelerator (3) 0.1 to 0.5% by weight; And 73 to 92% by weight of the inorganic filler (4); characterized in that it comprises a. According to the epoxy resin composition for sealing a semiconductor device according to the present invention, it exhibits a high flow characteristics when forming a semiconductor device package, low absorption of moisture and excellent heat resistance, flame retardants such as halogen-based, antimony trioxide and the like harmful to humans and devices It is characterized by excellent flame retardancy, reliability and moldability without containing.
반도체소자, 비페닐(biphenyl), 변성에폭시, 블록공중합, 난연성Semiconductor Device, Biphenyl, Modified Epoxy, Block Copolymerization, Flame Retardant
Description
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 별도의 할로겐계, 삼산화 안티몬 등의 난연제를 사용하지 않아도 우수한 자기소화성의 난연 특성을 나타내는 반도체 봉지제용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for sealing semiconductor elements, and more particularly, to an epoxy resin composition for semiconductor encapsulants that exhibits excellent self-extinguishing flame retardant properties without using a flame retardant such as halogen-based antimony trioxide.
일반적으로 반도체 봉지제용 에폭시 수지 조성물을 제조함에 있어서 난연성이 필요하며 대부분의 반도체업체에서 UL94 V-0의 난연성으로 요구하고 있다. 이러한 난연성을 확보하기 위해 할로겐 및 무기계 난연제를 사용하여 반도체 봉지제용 에폭시 수지를 제조하고 있으며 주로 브롬화에폭시와 삼산화안티몬을 반도체 봉지제용 에폭시 수지 제조시 사용하여 난연성을 확보하고 있다. In general, flame retardancy is required in preparing an epoxy resin composition for a semiconductor encapsulant, and most semiconductor companies require a flame retardancy of UL94 V-0. In order to secure such flame retardancy, halogen and inorganic flame retardants are used to manufacture epoxy resins for semiconductor encapsulants, and epoxy bromide and antimony trioxide are mainly used to produce epoxy resins for semiconductor encapsulants.
그러나 이와 같은 할로겐계 난연제를 사용하여 난연성을 확보한 반도체 봉지제용 에폭시 수지의 경우 소각시나 화재시 다이옥신(dioxin)이나 다이퓨란(difuran)등의 유독성 발암물질이 발생될 뿐만 아니라 연소시 발생하는 HBr 및 HCl 등의 가스로 인해 인체에 유독할 뿐만 아니라 반도체 칩(chip)이나 와이어(wire) 및 리드 프레임(lead frame)의 부식(corrosion)을 발생시키는 문제가 있다. However, in the case of incineration or fire, epoxy resins for semiconductor encapsulants that are flame retardant using halogen-based flame retardants not only generate toxic carcinogens such as dioxin or difuran, but also HBr and Not only toxic to human body due to gas such as HCl, there is a problem of generating corrosion of semiconductor chips, wires, and lead frames.
이에 대한 대책으로서 포스파젠(phosphazene)이나 인산에스테르와 같은 인계 난연제 및 질소원소 함유 수지와 같은 신규 난연제가 검토되고 있으나 질소원소 함유 수지의 경우 난연성이 부족하고 인계 난연제의 경우 수분과 결합하여 생성되는 인산 및 폴리인산이 반도체의 신뢰성을 떨어뜨리는 문제가 발생하고 있다.As a countermeasure, new flame retardants such as phosphorus flame retardants such as phosphazene and phosphate esters and nitrogen element-containing resins have been considered. However, phosphorus flame retardants in nitrogen element-containing resins are insufficient in flame retardancy and phosphorus flame retardants are combined with moisture. And polyphosphoric acid has a problem of deteriorating the reliability of the semiconductor.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위하여 창작된 것으로서, 본 발명의 목적은, 인체나 기기에 유해한 할로겐계 난연제 및 인계 난연제를 일절 사용하지 않고도 자기 소화성을 갖는 변성 에폭시 수지와 블록 공중합형 페놀 수지를 사용함으로써 우수한 난연성을 나타내는 반도체 봉지제용 에폭시 수지 조성물을 제공하는 것이다.The present invention has been made to solve the problems of the prior art as described above, and an object of the present invention is a block copolymerization with a modified epoxy resin having self-extinguishing properties without using any halogen-based flame retardants and phosphorus-based flame retardants harmful to humans or devices. It is providing the epoxy resin composition for semiconductor sealing agents which shows the outstanding flame retardance by using a type | mold phenol resin.
상기와 같은 본 발명의 목적은, 비페닐 유도체를 포함하는 노블락 구조의 페놀류 화합물과 4,4'-디히드록시 비페닐의 혼합물을 글리시딜 에테르화시켜 생성되는 변성 에폭시 수지(1) 4.3~11.8 중량%; 경화제로서 비페닐 유도체를 포함하는 페놀 수지와 트리페닐 메탄형 페놀수지의 블록 공중합형 페놀 수지(2) 1.9~8.3 중량%; 경화촉진제(3) 0.1~0.5 중량%; 및 무기 충전제(4) 73~92 중량%;를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 의하여 달성된다.The object of the present invention as described above is modified epoxy resin (1) produced by glycidyl etherification of a mixture of a phenol compound having a noblock structure and a 4,4'-dihydroxy biphenyl containing a biphenyl derivative. 11.8 weight percent; 1.9 to 8.3 wt% of a block copolymerized phenol resin (2) of a phenol resin containing a biphenyl derivative as a curing agent and a triphenyl methane type phenol resin; Curing accelerator (3) 0.1 to 0.5% by weight; And 73 to 92% by weight of the inorganic filler (4); is achieved by the epoxy resin composition for sealing semiconductor elements.
본 발명의 그 밖의 목적, 특정한 장점 및 신규한 특징들은 이하의 발명의 상 세한 설명과 바람직한 실시예로부터 더욱 분명해질 것이다.
Other objects, specific advantages and novel features of the present invention will become more apparent from the following detailed description of the invention and the preferred embodiments.
이하 본 발명에 따른 반도체 소자 밀봉용 에폭시 수지 조성물의 구성에 대하여 설명하기로 한다. 본 발명에서 사용된 반도체 소자 밀봉용 에폭시 수지 조성물은 에폭시 수지(1), 경화제(2), 경화촉진제(3) 및 무기 충전제(4)를 포함하는데, 각 구성 성분을 보다 상세히 설명하면 다음과 같다.Hereinafter, the configuration of the epoxy resin composition for sealing semiconductor elements according to the present invention will be described. The epoxy resin composition for sealing semiconductor elements used in the present invention includes an epoxy resin (1), a curing agent (2), a curing accelerator (3) and an inorganic filler (4), which will be described in more detail as follows. .
본 발명에 사용된 성분 (1)인 에폭시 수지는 하기 [화학식 1]로 표시되는 분자 중에 비페닐 유도체를 포함하는 노블락 구조의 페놀류 화합물과 하기 [화학식 2]로 표시되는 4,4'-디히드록시 비페닐의 혼합물을 글리시딜 에테르화시켜 얻은 변성에폭시 수지로서, 페놀 혼합물 중에 [화학식 1]의 중량비가 증가함에 따라 에폭시 수지 조성물의 난연특성이 향상되어 난연성 측면에서는 장점이 있으나, 페놀 혼합물 중에 [화학식 1]의 중량비가 85 중량%을 초과하면 이 혼합물로부터 얻어지는 변성 에폭시 수지의 점도가 증가하여 무기 충전제의 고충전에 적합하지 않고 유동특성이 저하되는 단점이 있다. The epoxy resin which is the component (1) used for this invention is a phenolic compound of the noblock structure containing a biphenyl derivative in the molecule | numerator represented by following [Formula 1], and the 4,4'- dihydride represented by following [Formula 2]. As modified epoxy resin obtained by glycidyl etherification of a mixture of oxybiphenyl, the flame retardancy of the epoxy resin composition is improved as the weight ratio of [Formula 1] is increased in the phenol mixture, which is advantageous in terms of flame retardancy. When the weight ratio of Formula 1 exceeds 85% by weight, the viscosity of the modified epoxy resin obtained from this mixture increases, which is not suitable for high filling of the inorganic filler and has a disadvantage in that the flow characteristics are lowered.
한편 페놀 혼합물 중에 [화학식 2]가 50 중량%를 초과하면 이 혼합물로부터 얻어지는 변성 에폭시 수지는 경화시 반응 조절이 어렵고 반응 속도가 지연되어, 이러한 수지로 제조된 반도체 소자 밀봉용 에폭시 수지 조성물은 이송성형을 이용한 성형 작업시 성형 불량을 야기시켜 생산성을 떨어뜨리는 문제가 있다. On the other hand, when [Formula 2] exceeds 50% by weight in the phenol mixture, the modified epoxy resin obtained from this mixture is difficult to control the reaction during curing, and the reaction rate is delayed. Thus, the epoxy resin composition for sealing a semiconductor device made of such a resin is transfer molding. There is a problem that the productivity is reduced by causing a molding failure during the molding operation using.
이와 같은 특성을 종합적으로 검토한 결과 페놀 혼합물 중 [화학식 1]의 중 량비는 50~85 중량%, 바람직하게는 70~80 중량%가 배합되는 것이 적절하다. 본 발명의 변성에폭시 수지는 이러한 중량비를 갖는 페놀 혼합물로부터 합성하여, 최적의 난연성, 고유동성 및 저흡습성의 에폭시 수지 조성물을 제공할 수 있다. As a result of comprehensively examining these properties, the weight ratio of [Formula 1] in the phenol mixture is suitably 50 to 85% by weight, preferably 70 to 80% by weight. The modified epoxy resin of the present invention can be synthesized from a phenol mixture having such a weight ratio to provide an optimum flame retardant, high fluidity and low hygroscopic epoxy resin composition.
상기 변성 에폭시 수지에 더하여 비페닐 수지 또는 오르소 크레졸 노볼락 수지 등을 추가하여 사용할 수 있으며, 이들 수지는 변성 에폭시 수지(1)에 대하여 0∼60 중량%가 추가된다. 반도체 밀봉용 에폭시 수지 조성물의 난연성을 확보하기 위해서는 상기 변성 에폭시 수지(1)는 총에폭시 수지량 중에 40 중량% 이상, 바람직하게는 60 중량% 이상 배합되는 것이 적절하다. 한편 본 발명에 따른 전체 에폭시 수지 조성물에 대하여 상기 성분 (1)의 함량은 4.3∼11.8 중량%인 것이 바람직하다.In addition to the said modified epoxy resin, a biphenyl resin or an ortho cresol novolak resin etc. can be added and used, These resins add 0 to 60 weight% with respect to the modified epoxy resin (1). In order to ensure the flame retardance of the epoxy resin composition for semiconductor sealing, it is suitable that the said modified epoxy resin 1 is mix | blended 40 weight% or more in the total epoxy resin amount, Preferably it is 60 weight% or more. On the other hand, it is preferable that the content of the said component (1) is 4.3-11.8 weight% with respect to the whole epoxy resin composition which concerns on this invention.
[화학식 1][Formula 1]
(상기식에서 n은 1∼5 사이의 정수 값을 갖는다.)(Where n has an integer value between 1 and 5)
[화학식 2][Formula 2]
본 발명에 사용된 필수 성분인 경화제로는 하기 [화학식 3]으로 표시되는 비페닐 유도체를 포함하는 페놀 수지와 트리페닐 메탄형 페놀수지의 블록 공중합형 페놀 수지(2)로서, 수지 중 수산기 당량이 150∼300, 연화점이 40∼90℃이며, 150℃에서의 용융점도가 0.1∼2.0 포이즈(poise)가 바람직하다. 2.0 포이즈가 넘으면 용융시에 유동성이 저하되는 문제가 발생하게 되어, 결국에는 전체 에폭시 수지 조성물의 성형성이 저하되어 바람직하지 못하다. 상기 공중합형 페놀수지의 m과 n은 1∼6의 정수이며, (m+n)은 2∼7의 정수가 되도록 선택한다. 상기 페놀 수지(2)는 총에폭시 수지량 중에 30 중량% 이상 함유된다.The curing agent which is an essential component used in the present invention is a block copolymer type phenol resin (2) of a phenol resin and a triphenyl methane type phenol resin containing a biphenyl derivative represented by the following [Formula 3], and a hydroxyl equivalent in the resin 150-300 and a softening point are 40-90 degreeC, and the melt viscosity in 150 degreeC is preferably 0.1-2.0 poise. If it exceeds 2.0 poise, the problem of fluidity will fall at the time of melting, and eventually the moldability of the whole epoxy resin composition will fall and it is unpreferable. M and n of the said copolymer type phenol resin are integers of 1-6, and (m + n) is chosen so that it may become an integer of 2-7. The said phenol resin (2) is contained 30 weight% or more in the total epoxy resin amount.
[화학식 3][Formula 3]
(상기식에서 m, n은 1∼6 사이의 정수 값을 갖는다.)(Wherein m and n have an integer value between 1 and 6).
상기 공중합형 페놀 수지와 에폭시 수지와 조합시킨 수지 조성물의 경화물은 가교밀도가 낮고, 수지 조성물의 성형시의 열응력 및 성형품인 반도체 장치의 흡습 후의 땜납 공정시 발생하는 열응력을 감소시키며, 특히 휨특성이 우수한 것을 특징으로 한다.The cured product of the resin composition combined with the copolymerized phenol resin and the epoxy resin has a low crosslinking density and reduces the thermal stress generated during the molding process of the resin composition and the thermal stress generated during the soldering process after the moisture absorption of the semiconductor device, which is a molded article. It is characterized by excellent bending characteristics.
상기 공중합형 페놀 수지에 더하여 하기 [화학식 4]로 표시되는 페놀 노볼락 수지, 하기 [화학식 5]로 표시되는 자일록 수지, 하기 [화학식 6]으로 표시되는 비페닐 유도체를 포함하는 페놀 노볼락 수지 또는 이들의 2이상의 혼합물이 상기 페놀 수지(2)에 대하여 0∼70 중량% 가 추가로 배합될 수 있다.In addition to the copolymer type phenol resin, a phenol novolak resin represented by the following [Chemical Formula 4], a xylloc resin represented by the following [Chemical Formula 5], and a phenol novolak resin comprising a biphenyl derivative represented by the following [Chemical Formula 6] Or a mixture of two or more thereof may be further blended with 0 to 70% by weight based on the phenol resin (2).
반도체 밀봉용 에폭시 수지 조성물의 난연성을 확보하기 위해서는 페놀 노블락 수지 및 자일록 수지 등과 병용하는 경우 상기의 공중합형 페놀 수지를 총페놀 수지 중에 30 중량% 이상, 바람직하게는 60 중량% 이상 배합하여야 한다. 하기 [화학식 6]으로 표시되는 것과 같은 난연성을 갖는 비페닐 유도체를 포함하는 페놀 노볼락 수지와 병용하는 경우에는 상기의 공중합형 페놀 수지를 사용하지 않고서도 난연성은 확보할 수 있으나 얇은 패키지에서 충분한 휨특성을 확보하기 위해서는 총페놀 수지 중에 30 중량% 이상 배합하는 것이 바람직하다. In order to ensure the flame retardancy of the epoxy resin composition for semiconductor sealing, when used in combination with a phenol noble resin, a xylox resin, or the like, the copolymerized phenol resin should be blended in a total phenol resin of at least 30% by weight, preferably at least 60% by weight. When used in combination with a phenol novolak resin containing a biphenyl derivative having a flame retardancy as shown in the following [Formula 6], flame retardancy can be secured without using the copolymerized phenol resin, but sufficient bending in a thin package In order to secure a characteristic, it is preferable to mix | blend 30 weight% or more in total phenol resin.
[화학식 4][Formula 4]
(상기 화학식에서 n은 1∼7의 정수 값을 갖는다.)(In the formula, n has an integer value of 1-7.)
[화학식 5][Formula 5]
(상기 화학식에서 n은 1∼6의 정수 값을 갖는다.)(In the formula, n has an integer value of 1-6.)
[화학식 6][Formula 6]
(상기 화학식에서 n은 1∼6의 정수 값을 갖는다.)(In the formula, n has an integer value of 1-6.)
상기 [화학식 4∼6]의 수지 모두 연화점이 50℃이상 100℃이하인 것을 사용하는 것이 적합하며, 그 이상의 연화점을 갖는 수지를 적용할 경우 수지 점도가 높아져서 유동성이 저하되는 문제가 발생된다. 상기 성분 (2)의 함량은 성분 (2)의 수산화기 당량에 대한 성분 (1)의 에폭시 당량의 조성비가 0.9∼1.3의 범위내에 들도록 결정한다. 이 때 상기 (2)의 함량은 본 발명에 따른 전체 에폭시 수지 조성물에 대하여 1.9∼8.3 중량%이며, 상기 범위를 벗어나는 경우 미반응 에폭시기와 페놀기가 다량 발생하여 신뢰성에 좋지 않은 결과를 주게 된다.It is preferable to use a resin having a softening point of 50 ° C. or more and 100 ° C. or less for all the resins of the above Chemical Formulas 4 to 6, and when a resin having a softening point of more than one is used, the resin viscosity becomes high and fluidity is lowered. The content of component (2) is determined so that the composition ratio of epoxy equivalent of component (1) to hydroxyl equivalent of component (2) falls within the range of 0.9 to 1.3. At this time, the content of (2) is 1.9 to 8.3 wt% with respect to the total epoxy resin composition according to the present invention, when out of the above range, a large amount of unreacted epoxy group and phenol group is generated, which gives a bad result for reliability.
본 발명에 사용된 성분 (3)인 경화 촉진제는 상기 성분 (1)과 성분 (2)의 경화반응을 촉진하기 위해 필요한 성분으로, 예를 들어 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류, 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류, 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 등을 사용할 수 있으며, 이 중 1종 또는 2종 이상을 병용하여 사용할 수 있다. 사용량은 본 발 명에 따른 전체 에폭시 수지 조성물에 대하여 0.1∼0.5 중량%가 적합하다.As the component (3) used in the present invention, the curing accelerator is a component necessary for promoting the curing reaction between the component (1) and the component (2). For example, benzyldimethylamine, triethanolamine, triethylenediamine, dimethylamino Tertiary amines such as ethanol and tri (dimethylaminomethyl) phenol, imidazoles such as 2-methylimidazole and 2-phenylimidazole, and organic such as triphenylphosphine, diphenylphosphine and phenylphosphine Tetraphenyl boron salts, such as phosphine, tetraphenyl phosphonium tetraphenyl borate, and triphenyl phosphine tetraphenyl borate, etc. can be used, One or two or more of these can be used together. The amount of use is suitably 0.1 to 0.5% by weight based on the total epoxy resin composition according to the present invention.
본 발명에 사용된 무기 충전제(4)는 그 평균입자가 0.1∼35㎛인 용융 또는 합성 실리카를 사용하는 것이 바람직하다. 충전량은 전체 에폭시 수지 조성물에 대하여 73~92 중량% 사용할 수 있으며, 바람직하게는 82~92 중량% 사용하는 것이 좋다. As the inorganic filler 4 used in the present invention, it is preferable to use fused or synthetic silica having an average particle of 0.1 to 35 mu m. The filling amount may be used in the range of 73 to 92% by weight based on the total epoxy resin composition, preferably 82 to 92% by weight.
본 발명에 따른 수지 조성물에는 본 발명의 목적을 해하지 않는 범위에서 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 에폭시 실란, 아미노 실란, 알킬 실란 등의 커플링제 및 변성 실리콘 오일등을 필요에 따라 사용할 수 있다. 이 때 변성 실리콘 오일로는 내열성이 우수한 실리콘 중합체가 좋으며 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복실 관능기를 갖는 실리콘 오일 등을 1종 또는 2종 이상 혼합하여 전체 에폭시 수지 조성물에 대해 0.05∼1.5 중량% 사용할 수 있다. In the resin composition according to the present invention, release agents such as higher fatty acids, higher fatty acid metal salts, ester waxes, coloring agents such as carbon black, organic and inorganic dyes, epoxy silanes, amino silanes, alkyl silanes, and the like, without departing from the object of the present invention. The coupling agent, modified silicone oil, etc. can be used as needed. At this time, the modified silicone oil is preferably a silicone polymer having excellent heat resistance, and a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group, or the like is mixed with one or two or more kinds to the entire epoxy resin composition. 0.05 to 1.5% by weight can be used.
이상과 같은 원재료를 이용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로는 소정의 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀이나 니이더로 용융혼련하며, 냉각, 분쇄과정을 거쳐 최종 분말 제품을 얻는 방법이 사용되고 있다. 본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션 (Injection) 성형법이나 캐스팅(Casting) 등의 방법으로도 성형 가능하다.As a general method for producing an epoxy resin composition using the raw materials described above, a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or a solid mixer, followed by melt kneading with a roll mill or a kneader, followed by cooling and grinding. A method of obtaining the final powder product is used. As a method of sealing a semiconductor element using the epoxy resin composition obtained by this invention, the low-pressure transfer molding method is the method most commonly used, and it can also be shape | molded by the methods, such as injection molding method and casting.
* 실시예Example
이하 본 발명을 실시 예에 의거 상세히 설명하나, 본 발명이 실시 예에 의해 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by Examples.
실시예 1∼3Examples 1 to 3
본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위해 표 1에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀 믹서를 이용, 균일하게 혼합하여 분말 상태의 1차 조성물을 제조하였으며, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융혼련한 뒤, 냉각 및 분쇄과정을 거쳐 에폭시 수지 조성물을 제조하였다. 이 때 변성 에폭시 제조시 사용한 페놀 혼합물내의 상기 [화학식 1]의 화합물과 [화학식 2]의 화합물의 중량비는 80:20 이었다. To prepare the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component was weighed, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. After melt kneading at 100 ° C. for 7 minutes, an epoxy resin composition was prepared by cooling and pulverizing. At this time, the weight ratio of the compound of [Formula 1] and the compound of [Formula 2] in the phenol mixture used for producing the modified epoxy was 80:20.
이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 다음과 같은 방법으로 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위해, MPS(Multi Plunger System)성형기를 이용하여 175℃에서 60초간 성형시킨후, 175℃에서 6시간동안 후경화시켜, MQFP형 반도체 소자를 제작하였다. 본 발명에 의한 에폭시수지 조성물의 물성 및 난연성, 신뢰성, 성형성 시험결과를 표 2에 나타내었다. 신뢰성 시험은 열충격 시험에서의 패키지 크랙 발생수로 나타내었다.The epoxy resin composition thus obtained was evaluated for physical properties and reliability by the following method, and for reliability test, after molding for 60 seconds at 175 ℃ using a multi-plunger system (MPS) molding machine for 6 hours at 175 ℃ It was post-cured to produce an MQFP semiconductor device. Table 2 shows the physical properties and flame retardancy, reliability, and moldability test results of the epoxy resin composition according to the present invention. Reliability tests were expressed as the number of package crack occurrences in the thermal shock test.
[물성평가 방법][Property evaluation method]
* 스파이럴 플로우 (Spiral Flow): EMMI규격을 기준으로 금형을 제작하여 성 형온도(175℃), 성형압력 70Kgf/cm2에서 유동 길이를 평가하였다.* Spiral Flow (Spiral Flow): The mold was manufactured based on the EMMI standard, and the flow length was evaluated at molding temperature (175 ℃) and molding pressure of 70Kgf / cm 2 .
* 유리전이온도 (Tg): TMA(Thermomechanical Analyser)로 평가하였다.* Glass transition temperature (Tg): evaluated by TMA (Thermomechanical Analyser).
* 굴곡강도 및 굴곡 탄성율: 경화된 EMC성형시편(125 X 12.6 X 6.4 mm)을 준비하여 시편 중심부의 넓이와 두께를 Micrometer로 0.001mm까지 재서 UTM 시험기를 이용하여 측정하였다.* Flexural strength and flexural modulus: Hardened EMC molded specimens (125 X 12.6 X 6.4 mm) were prepared and the width and thickness of the center of the specimen were measured using a micrometer up to 0.001 mm and measured using a UTM tester.
* 난연성: UL 94 V-0 규격에 준하여 평가하였다.* Flame retardant: evaluated according to UL 94 V-0 standard.
* 내크랙성 평가 (신뢰성 시험): 에폭시 수지 조성물로 제조한 LQFP형 반도체 소자를 125℃에서 24시간 건조시킨 후, 5싸이클의 열충격시험을 거쳐 다시 85℃/85% 상대습도 조건하에서 168시간 동안 방치시킨 후 235℃, 10초 동안 IR 리플로우를 3회 통과시켜 1차로 프리컨디션 조건하에서의 패키지 크랙발생 유무를 평가한다. 프리컨디션 후 열충격 환경시험기(Temperature Cycle Test)에서 -65℃에서 10분, 25℃에서 5분, 150℃에서 10분씩 방치하는 것을 1싸이클로하여 1,000싸이클을 진행한 후 비파괴 검사기인 SAT (Scanning Acoustic Tomograph)로 크랙발생 유무를 평가하였다. * Crack resistance evaluation (reliability test): After drying the LQFP type semiconductor device made of an epoxy resin composition at 125 ℃ for 24 hours, after 5 cycles of thermal shock test again under 85 ℃ / 85% relative humidity conditions for 168 hours After standing, three passes of IR reflow three times for 10 seconds at 235 ° C. were used to first evaluate the presence of package cracks under precondition conditions. Non-destructive testing machine SAT (Scanning Acoustic Tomograph) after 1,000 cycles of 1 cycle of preconditioning for 10 minutes at -65 ° C, 5 minutes at 25 ° C, and 10 minutes at 150 ° C in a thermal shock cycle tester. ) Cracks were evaluated.
[표 1]TABLE 1
비교예 1∼2Comparative Examples 1 and 2
다음 표 1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조하였으며, 각 물성 및 신뢰성 평가결과를 표 2에 나타내었다.As shown in Table 1, each component was weighed to a given composition to prepare an epoxy resin composition in the same manner as in Example, and the results of evaluation of physical properties and reliability are shown in Table 2.
[표 2]TABLE 2
상기 표 2에 나타난 바와 같이 본 발명에 의한 에폭시 수지 조성물은 기존의 비교예에 비하여 난연성을 확보하면서도 스파이럴 플로우와 굴곡강도가 높고, 유리전이온도와 굴곡탄성률이 낮아 성형성이 우수하며, 신뢰성 면에서도 보다 우수한 특성을 나타내고 있음을 알 수 있다. As shown in Table 2, the epoxy resin composition according to the present invention has high flame flow and flexural strength, low glass transition temperature and low flexural modulus, and excellent moldability, even in terms of reliability while securing flame retardancy compared to the conventional comparative example. It can be seen that the superior characteristics are shown.
상기 언급한 바와 같은 본 발명에 따른 반도체 소자 밀봉용 에폭시 수지 조성물에 의하면, 반도체 소자 패키지 성형시 고유동 특성을 나타내며, 수분의 흡수가 낮고 내열성이 우수할 뿐만 아니라 인체나 기기에 유해한 할로겐계, 삼산화 안티몬 등의 난연제를 함유하지 않으면서도 난연성, 신뢰성 및 성형성이 우수한 특징이 있다.According to the epoxy resin composition for sealing a semiconductor device according to the present invention as described above, exhibits a high flow characteristics when forming a semiconductor device package, low absorption of moisture, excellent heat resistance, halogen-based, trioxide harmful to humans or devices It does not contain a flame retardant such as antimony and is characterized by excellent flame retardancy, reliability and moldability.
비록 본 발명이 상기 언급된 바람직한 실시예와 관련하여 설명되어졌지만, 발명의 요지와 범위로부터 벗어남이 없이 다양한 수정이나 변형을 하는 것이 가능하다. 따라서 특허청구범위는 본 발명의 요지에 속하는 이러한 수정이나 변형을 포함한다.Although the present invention has been described in connection with the above-mentioned preferred embodiments, it is possible to make various modifications or variations without departing from the spirit and scope of the invention. Thus, the claims include any such modifications or variations that fall within the spirit of the invention.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040112806A KR100673752B1 (en) | 2004-12-27 | 2004-12-27 | Epoxy resin composition for encapsulating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040112806A KR100673752B1 (en) | 2004-12-27 | 2004-12-27 | Epoxy resin composition for encapsulating semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20060074159A true KR20060074159A (en) | 2006-07-03 |
| KR100673752B1 KR100673752B1 (en) | 2007-01-24 |
Family
ID=37166948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020040112806A KR100673752B1 (en) | 2004-12-27 | 2004-12-27 | Epoxy resin composition for encapsulating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100673752B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7825528B2 (en) * | 2005-08-02 | 2010-11-02 | Cheil Industries, Inc. | Epoxy resin composition for packaging a semiconductor device, method of making the same, and semiconductor device using the same |
| CN114437508A (en) * | 2022-03-24 | 2022-05-06 | 昆山兴凯半导体材料有限公司 | High-low temperature resistant high-fluidity epoxy resin composition for industrial control and application thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06107911A (en) * | 1992-09-24 | 1994-04-19 | Sumitomo Bakelite Co Ltd | Resin composition for semiconductor sealing use |
| JPH11140277A (en) * | 1997-11-10 | 1999-05-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device produced by using the composition |
| KR100637305B1 (en) * | 2002-02-27 | 2006-10-23 | 히다치 가세고교 가부시끼가이샤 | Encapsulating Epoxy Resin Composition, and Electronic Parts Device Using the Same |
-
2004
- 2004-12-27 KR KR1020040112806A patent/KR100673752B1/en active IP Right Grant
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7825528B2 (en) * | 2005-08-02 | 2010-11-02 | Cheil Industries, Inc. | Epoxy resin composition for packaging a semiconductor device, method of making the same, and semiconductor device using the same |
| CN114437508A (en) * | 2022-03-24 | 2022-05-06 | 昆山兴凯半导体材料有限公司 | High-low temperature resistant high-fluidity epoxy resin composition for industrial control and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100673752B1 (en) | 2007-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100739363B1 (en) | Epoxy resin for packaging semiconductor device | |
| KR100673752B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
| KR100715102B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
| KR100611457B1 (en) | Epoxy Resin Composition for Encapsulating Semiconductor Device | |
| JP4567641B2 (en) | Epoxy resin composition for sealing semiconductor element and semiconductor element using the same | |
| KR100599865B1 (en) | Epoxy resin composition for sealing Semiconductor device | |
| KR100611459B1 (en) | Epoxy Resin Composition for Encapsulating Semiconductor Device | |
| KR101266535B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same | |
| KR100558256B1 (en) | Epoxy resin composition for sealing semiconductor device | |
| KR100561575B1 (en) | Epoxy resin for packaging semiconductor device | |
| KR100686886B1 (en) | Epoxy resin composition for sealing semiconductor device | |
| KR100558261B1 (en) | Epoxy Resin Composition for Encapsulating Semiconductor Device | |
| KR100561569B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
| KR100611442B1 (en) | Epoxy resin composition comprising organic nitrogen compound containing titanium as flame retardants | |
| KR100536094B1 (en) | Epoxy resin composition for encapsulation of semiconductor device | |
| KR100751181B1 (en) | Epoxy resin composition for sealing Semiconductor device | |
| KR20140083792A (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same | |
| KR100611458B1 (en) | Epoxy Resin Composition for Encapsulating Semiconductor Device | |
| KR100758881B1 (en) | Epoxy resin composition for sealing Semiconductor device and Semiconductor device Sealed therewith | |
| KR100558257B1 (en) | Epoxy resin composition for sealing Semiconductor device | |
| KR100558254B1 (en) | Epoxy molding compound for sealing electronic component | |
| KR100673612B1 (en) | High reliable epoxy molding compound having good flame retardancy and flow-ability for sealing electronic component | |
| KR100599863B1 (en) | Epoxy Resin Composition for Encapsulating Semiconductor Device | |
| KR100797976B1 (en) | Epoxy resin composition for packaging semiconductor device | |
| KR100696880B1 (en) | Epoxy Resin Composition for Encapsulating Semiconductor Device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20130103 Year of fee payment: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20131217 Year of fee payment: 8 |
|
| FPAY | Annual fee payment |
Payment date: 20141223 Year of fee payment: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20151218 Year of fee payment: 10 |
|
| FPAY | Annual fee payment |
Payment date: 20161223 Year of fee payment: 11 |
|
| FPAY | Annual fee payment |
Payment date: 20171219 Year of fee payment: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20181220 Year of fee payment: 13 |
|
| FPAY | Annual fee payment |
Payment date: 20200103 Year of fee payment: 14 |