KR100696880B1 - Epoxy Resin Composition for Encapsulating Semiconductor Device - Google Patents
Epoxy Resin Composition for Encapsulating Semiconductor Device Download PDFInfo
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- KR100696880B1 KR100696880B1 KR1020050136076A KR20050136076A KR100696880B1 KR 100696880 B1 KR100696880 B1 KR 100696880B1 KR 1020050136076 A KR1020050136076 A KR 1020050136076A KR 20050136076 A KR20050136076 A KR 20050136076A KR 100696880 B1 KR100696880 B1 KR 100696880B1
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4014—Nitrogen containing compounds
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- C08L2201/00—Properties
- C08L2201/02—Flame or fire retardant/resistant
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/66—Substances characterised by their function in the composition
- C08L2666/72—Fillers; Inorganic pigments; Reinforcing additives
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Abstract
Description
본 발명은 반도체용 수지 조성물에 사용되며 할로겐이 함유되지 않은 난연성 반도체 봉지재용 에폭시 수지 조성물에 관한 것이다. The present invention relates to an epoxy resin composition for a flame retardant semiconductor encapsulant that is used in a resin composition for semiconductors and does not contain halogen.
일반적으로 반도체 봉지재용 에폭시 수지를 제조함에 있어서 난연성이 필요하며 대부분의 반도체업체에서 UL-94 V-0를 난연성으로 요구하고 있다. 이러한 난연성을 확보하기 위해 난연제를 사용하여 반도체 봉지재용 에폭시 수지를 제조하고 있으며 주로 브롬에폭시와 삼산화안티몬을 반도체 봉지재용 에폭시 수지 제조시 사용하여 난연성을 확보하고 있다.In general, flame retardancy is required in manufacturing an epoxy resin for semiconductor encapsulant, and most semiconductor companies require UL-94 V-0 as flame retardant. In order to secure such flame retardancy, a flame retardant is used to manufacture an epoxy resin for a semiconductor encapsulant, and bromine epoxy and antimony trioxide are mainly used to prepare an epoxy resin for a semiconductor encapsulant to ensure flame retardancy.
즉 반도체 봉지재용 에폭시 수지를 제조시 난연성을 부여하는 난연제로서 브롬이나 염소계의 할로겐계 난연제와 이것과 같이 난연 상승효과가 우수한 삼산화안티몬을 난연보조제로 많이 사용하고 있다. 그러나 이러한 할로겐계 난연제를 사용하여 난연성을 확보한 반도체 봉지재용 에폭시 수지의 경우 소각 시나 화재 시 다이옥신(dioxin)이나 다이퓨란(difuran) 등의 유독성 발암물질이 발생되는 것으로 알려져 있다. 또한 할로겐계 난연제의 경우 연소 시 발생하는 HBr 및 HCl 등의 가스로 인해 인체에 유독하며 반도체 칩(chip)이나 와이어(wire) 및 리드 프레임(lead frame)의 부식(corrosion)을 발생시키는 주요한 원인으로 작용하는 점 등의 문제가 있다. 이에 대한 대책으로서 인산에스테르와 같은 인계난연제와 같은 신규 난연제가 검토되고 있으나 인계난연제의 경우 수분과 결합하여 생성되는 인산 및 폴리인산이 반도체의 신뢰성을 떨어뜨리는 문제가 발생하고 있다.In other words, bromine or chlorine halogen-based flame retardants and antimony trioxide having excellent flame retardant synergistic effects are widely used as flame retardants as flame retardants for imparting flame retardancy in the manufacture of epoxy resins for semiconductor encapsulants. However, in the case of an epoxy resin for a semiconductor encapsulant having flame retardancy by using a halogen-based flame retardant, it is known that toxic carcinogens such as dioxin or difuran are generated during incineration or fire. In addition, halogen-based flame retardants are toxic to humans due to gases such as HBr and HCl generated during combustion, and are the main cause of corrosion of semiconductor chips, wires, and lead frames. There is a problem such as working. As a countermeasure against this, new flame retardants such as phosphorus flame retardants such as phosphate esters have been examined, but phosphorus flame retardants have a problem in that phosphoric acid and polyphosphoric acid formed by bonding with water deteriorate the reliability of semiconductors.
본 발명은 이러한 인체나 기기에 유해한 할로겐계 난연제 및 인계난연제를 사용하지 않고 자일록 혹은 비페닐 유도체를 포함하는 벤지이미딘계 에폭시 수지를 사용하여 우수한 난연성 및 내습성,휨 특성을 부여하며 할로겐계 난연제의 유해성을 없앤 비할로겐(non-halogen) 반도체 봉지재용 에폭시 수지 조성물을 제공하는 것을 기술적 과제로 한다. The present invention provides a superior flame resistance, moisture resistance, bending properties by using a benzymidine-based epoxy resin containing a xylox or biphenyl derivative without using a halogen-based flame retardant and phosphorus-based flame retardant harmful to humans or devices, halogen-based flame retardant It is a technical problem to provide the epoxy resin composition for non-halogen semiconductor sealing materials which eliminated the hazard of
본 발명은 에폭시 수지, 경화제, 경화촉진제, 및 무기 충전제를 필수성분으로 하여 이루어지는 에폭시 수지 조성물에 있어서, 상기 에폭시 수지는 화학식 1, 화학식 2 및 화학식 3 중 어느 하나로 표시되는 자일록 또는 비페닐 유도체를 포함하는 벤지이미딘계 구조의 에폭시류 화합물 단독 또는 2종 이상의 혼합물을 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물이 제공된다.The present invention is an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler as essential components, wherein the epoxy resin is a xylo or biphenyl derivative represented by any one of formulas (1), (2) and (3). There is provided an epoxy resin composition for sealing a semiconductor device, comprising an epoxy compound alone or a mixture of two or more kinds of benziimidine-based structures.
[화학식 1][Formula 1]
(상기 R1, R4는 H 혹은 알킬 또는 아릴 그룹이며, R2, R3는 H 혹은 알킬 또는 아릴 그룹이며, 1∼2 에폭시 그룹을 포함할 수 있다. a1과 d1은 1∼4, b1과 c1은 1∼5의 정수이다.) R 1 and R 4 may be H or an alkyl or aryl group, and R 2 and R 3 may be H or an alkyl or aryl group, and may include 1 to 2 epoxy groups. A1 and d1 may be 1 to 4, and b1 and c1 may be 1 It is an integer of -5.)
[화학식 2][Formula 2]
(상기 R5, R8는 H 혹은 알킬 또는 아릴 그룹이며, R6, R7은 H 혹은 알킬 또는 아릴 그룹이며, 1∼2 에폭시 그룹을 포함할 수 있다. a2와 d2은 1∼4, b2와 c2은 1∼5의 정수이다.) R 5 and R 8 may be H or an alkyl or aryl group, R 6 and R 7 may be H or an alkyl or aryl group, and may include 1 to 2 epoxy groups. A2 and d2 may be 1 to 4, b2 and c2 may be 1 It is an integer of -5.)
[화학식 3][Formula 3]
(상기 R9, R10, R11, R12는 H 혹은 알킬 또는 아릴 그룹이며, a3, b3, c3, d3은 1∼4의 정수이다.)(The above R9, R10, R11 and R12 are H or an alkyl or aryl group, and a3, b3, c3 and d3 are integers of 1 to 4.)
상기 화학식 1, 화학식 2 및 화학식 3 중 어느 하나로 표시되는 자일록 또는 비페닐 유도체를 포함하는 벤지이미딘계 구조의 에폭시류 화합물은 전체 에폭시 수지 조성물에 대하여 0.1 ∼ 15 중량% 포함되는 것을 특징으로 한다.Epoxy compounds of the benziimidine-based structure containing a xylox or biphenyl derivative represented by any one of Formula 1, Formula 2 and Formula 3 is characterized in that 0.1 to 15% by weight based on the total epoxy resin composition.
상기 무기충전제는 전체 수지 조성물에 대하여 70 ∼ 92 중량% 포함되는 것을 특징으로 한다. The inorganic filler is characterized in that 70 to 92% by weight based on the total resin composition.
상기 에폭시 수지는 오르소 크레졸 노볼락형, 비페닐형, 다관능형, 다방향족형, 나프탈렌형, 디시클로펜타디엔형 에폭시 수지 중 어느 하나 또는 2 종 이상을 에폭시 수지량에 대하여 3∼20 중량% 추가로 포함하는 것을 특징으로 한다.The epoxy resin may be any one or two or more of ortho cresol novolac type, biphenyl type, polyfunctional type, polyaromatic type, naphthalene type, dicyclopentadiene type epoxy resin and 3 to 20% by weight based on the amount of epoxy resin. It is characterized in that it further comprises.
이하 본 발명을 상세히 설명하면 다음과 같다 Hereinafter, the present invention will be described in detail.
본 발명에서 상기 에폭시 수지는 화학식 1, 화학식 2 및 화학식 3 중 어느 하나로 표시되는 자일록 또는 비페닐 유도체를 포함하는 벤지이미딘계 구조의 에폭시류 화합물 단독 또는 2종 이상의 혼합물을 포함하는 것을 사용한다. In the present invention, the epoxy resin is used to include an epoxy compound of the benziimidine-based structure alone or a mixture of two or more thereof, including a xylox or biphenyl derivative represented by any one of formulas (1), (2) and (3).
[화학식 1][Formula 1]
(상기 R1, R4는 H 혹은 알킬 또는 아릴 그룹이며, R2, R3는 H 혹은 알킬 또는 아릴 그룹이며, 1∼2 에폭시 그룹을 포함할 수 있다. a1과 d1은 1∼4, b1과 c1은 1∼5의 정수이다.) R 1 and R 4 may be H or an alkyl or aryl group, and R 2 and R 3 may be H or an alkyl or aryl group, and may include 1 to 2 epoxy groups. A1 and d1 may be 1 to 4, and b1 and c1 may be 1 It is an integer of -5.)
[화학식 2][Formula 2]
(상기 R5, R8는 H 혹은 알킬 또는 아릴 그룹이며, R6, R7은 H 혹은 알킬 또는 아릴 그룹이며, 1∼2 에폭시 그룹을 포함할 수 있다. a2와 d2은 1∼4, b2와 c2는 1∼5의 정수이다.) R 5 and R 8 may be H or an alkyl or aryl group, R 6 and R 7 may be H or an alkyl or aryl group, and may include 1 to 2 epoxy groups. A2 and d2 may be 1 to 4, b2 and c2 may be 1 It is an integer of -5.)
[화학식 3][Formula 3]
(상기 R9, R10, R11, R12는 H 혹은 알킬 또는 아릴 그룹이며, a3, b3, c3, d3는 1∼4의 정수이다.)(The above R9, R10, R11, and R12 are H or alkyl or aryl groups, and a3, b3, c3 and d3 are integers of 1 to 4.)
본 발명에 적용된 상기의 벤지이미딘계 변성 에폭시 수지는 자일록 또는 바이페닐유도체와 벤지이미딘을 근간으로 가지고 있는 구조를 하고 있기 때문에, 흡습성, 인성, 접착성, 휨 특성, 난연성이 우수하며 또한 내크랙성도 우수하다. 본 발명에서 적용된 상기 벤지이미딘계 변성 에폭시 수지는 가교 밀도가 낮아서 다방향족 함량이 높아서 고온에서 연소 시 탄소층(char)을 형성하여 우수한 난연성을 확보하게 된다. Since the benziimidine-based modified epoxy resin applied to the present invention has a structure containing xyloc or biphenyl derivatives and benzimidine as a basis, it is excellent in hygroscopicity, toughness, adhesiveness, bending property, flame resistance, and The crackability is also excellent. The benzimidine-based modified epoxy resin applied in the present invention has a low crosslinking density and thus has a high multiaromatic content, thereby forming a carbon layer (char) when burning at a high temperature to ensure excellent flame retardancy.
상기 화학식 1, 화학식 2 및 화학식 3 중 어느 하나로 표시되는 벤지이미딘계 에폭시 수지는 본 발명의 에폭시 수지 조성물에 대하여 0.1 ∼ 15 중량% 함유되는 것이 바람직하며 0.5 ∼ 5 중량% 수준의 함량이 보다 바람직하다. 벤지이미딘계 에폭시 수지를 15 중량%보다 초과하여 사용하는 경우에는 에폭시 수지 조성물의 경화성이 저하되기 쉽고, 0.1 중량% 미만으로 사용 시에는 충분한 난연성 및 휨 개선 특성을 얻을 수가 없게 된다. The benzimidine-based epoxy resin represented by any one of Formulas 1, 2 and 3 is preferably contained in an amount of 0.1 to 15% by weight, and more preferably in a level of 0.5 to 5% by weight, based on the epoxy resin composition of the present invention. . In the case where the benzimidine-based epoxy resin is used in an amount of more than 15% by weight, the curability of the epoxy resin composition tends to be lowered, and when used in less than 0.1% by weight, sufficient flame retardancy and warpage improvement characteristics cannot be obtained.
본 발명에 사용되는 에폭시 수지는 상기 화학식 1, 화학식 2 및 화학식 3 중 어느 하나로 표시되는 벤지이미딘계 에폭시 수지를 단독으로 사용하거나 2종 이상 혼합하여 사용이 가능하며, 오르소 크레졸 노볼락형, 비페닐형, 다관능형, 다방향족형, 나프탈렌형, 디시클로펜타디엔형 에폭시 수지 중 어느 하나 또는 2종 이상을 추가로 혼합하여 사용할 수 있는데, 에폭시 수지량에 대하여 3∼20 중량%가 바람직하다. Epoxy resins used in the present invention may be used alone or mixed with two or more benzyimidine-based epoxy resins represented by any one of the formulas (1), (2) and (3), ortho cresol novolac type, non Any one or two or more of a phenyl type, polyfunctional type, polyaromatic type, naphthalene type, dicyclopentadiene type epoxy resin can be further mixed and used, and 3 to 20% by weight is preferable based on the amount of epoxy resin.
본 발명에 사용되는 경화제는 노볼락 형, 자일록 형, 다관능 형, 다방향족 형,나프탈렌 형, 디사이클로 펜타디엔 형 페놀 수지 중 어느 한 가지 또는 2종 이상을 혼합하여 사용하고 전체 경화제량은 에폭시 수지 조성물에 대하여 3 ∼ 20 중량%가 바람직하다. The curing agent used in the present invention may be used by mixing any one or two or more of a novolak type, a xylock type, a polyfunctional type, a polyaromatic type, a naphthalene type, a dicyclopentadiene type phenol resin, and the total amount of the curing agent is 3-20 weight% is preferable with respect to an epoxy resin composition.
본 발명에 사용되는 경화촉진제는 상기 에폭시와 경화제의 경화 반응을 촉진하기 위해 필요한 성분으로, 예를 들어 벤질디메틸아민,트리에탄올아민,트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류, 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸 류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류, 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 등이 있으며 이 중 1종 또는 2종 이상을 병용해도 좋으며, 사용량은 전체 에폭시 수지 조성물에 대하여 0.1 ∼ 1 중량%가 좋다. The curing accelerator used in the present invention is a component necessary for promoting the curing reaction of the epoxy and the curing agent, for example, benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol, and the like. Imidazoles such as tertiary amines, 2-methylimidazole and 2-phenylimidazole, organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine, tetraphenylphosphonium tetraphenylborate And tetraphenylboron salts such as triphenylphosphine tetraphenylborate, and the like, and one or two or more of them may be used in combination, and the amount of use thereof is preferably 0.1 to 1% by weight based on the total epoxy resin composition.
본 발명에 사용되는 무기 충전제는 고순도의 천연실리카, 합성실리카, 용융실리카,알루미나 등을 사용하고 성상은 구상 및 각상을 모두 적용할 수 있다. 무기 충전제의 충전량은 조성물 전체에 대하여 70 ∼ 92 중량% 사용하는 것이 바람직하다. 70중량% 미만으로 무기 충전제를 사용할 경우에는 충분한 강도와 저열팽창화를 실현할 수 없으며 또한 수분의 침투가 용이해져 신뢰성 특성에 치명적이 된다. 또한 무기 충전제의 충전량이 92 중량%를 초과하면 유동특성의 저하로 인하여 성형성이 나빠질 우려가 있다. The inorganic filler used in the present invention may use high-purity natural silica, synthetic silica, fused silica, alumina, and the like, and the shape may be applied to both spherical and spherical phases. It is preferable to use 70-92 weight% of filling amounts of an inorganic filler with respect to the whole composition. When the inorganic filler is used at less than 70% by weight, sufficient strength and low thermal expansion cannot be realized, and moisture penetration is facilitated, which is fatal to reliability characteristics. In addition, when the filling amount of the inorganic filler exceeds 92% by weight, the moldability may be deteriorated due to the deterioration of the flow characteristics.
본 발명의 조성물에는 필요에 따라 브롬화 에폭시 수지, 산화 안티몬, 금속 수화물 등의 난연제, 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제 및 변성 실리콘 오일, 실리콘 파우더, 실리콘 레진 등의 응력완화제 등을 필요에 따라 사용할 수 있다. 이 때 변성 실리콘 오일로는 내열성이 우수한 실리콘 중합체가 좋으며 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복실 관능기를 갖는 실리콘 오일 등을 1종 또는 2종 이상 혼합하여 전체 에폭시 수지 조성물에 대해 0.05 ∼ 1.5 중량% 사용할 수 있다. The composition of the present invention, if necessary, flame retardants such as brominated epoxy resins, antimony oxide, metal hydrates, release agents such as higher fatty acids, higher fatty acid metal salts, ester waxes, colorants such as carbon black, organic and inorganic dyes, and modified silicone oils, Stress relieving agents, such as silicone powder and silicone resin, etc. can be used as needed. At this time, the modified silicone oil is preferably a silicone polymer having excellent heat resistance, and a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group, or the like is mixed with one or two or more kinds to the entire epoxy resin composition. 0.05 to 1.5% by weight can be used.
이상과 같은 원재료를 이용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로 소정의 배합량을 헨셀 믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀이나 니이더로 용융 혼련하며, 냉각, 분쇄 과정을 거쳐 최종 분말 제품을 얻는 방법이 사용되고 있다. As a general method for producing an epoxy resin composition using the raw materials as described above, a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or a Rodige mixer, melt-kneaded with a roll mill or a kneader, and cooled and pulverized. The method of obtaining a final powder product is used.
본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션(Injection) 성형법이나 캐스팅(Casting) 등의 방법으로도 성형 가능하다. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, the low pressure transfer molding method is most commonly used, and it can be molded by an injection molding method or a casting method.
이하 본 발명을 실시 예에 의거 상세히 설명하나, 본 발명이 실시 예에 의해 한정되는 것은 아니다. Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by Examples.
[실시예 1 내지 6][Examples 1 to 6]
본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위해 표 1과 표 3에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀 믹서를 이용, 균일하게 혼합하여 분말 상태의 1차 조성물을 제조하였으며, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융혼련한 뒤, 냉각 및 분쇄과정을 거쳐 에폭시 수지 조성물을 제조하였다.In order to prepare an epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Tables 1 and 3, each component was weighed, and then uniformly mixed using a Henschel mixer to prepare a powder-based primary composition. After melt-kneading at 100 ° C. for 7 minutes using a 2-roll mill, an epoxy resin composition was prepared by cooling and pulverizing.
이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 다음과 같은 방법으로 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위해 MPS(Multi Plunger System)성형기를 이용하여 175℃에서 60초간 성형시킨 후, 175℃에서 6시간 동안 후경화시켜, PCB 0.27T, 144FBGA형 반도체 소자를 제작하였다.The epoxy resin composition thus obtained was evaluated for physical properties and reliability by the following method, and after molding for 60 seconds at 175 ℃ using a Multi-Plunger System (MPS) molding machine for a reliability test, after 6 hours at 175 ℃ It hardened | cured and the PCB 0.27T and 144FBGA type | mold semiconductor element were produced.
본 발명에 의한 에폭시수지 조성물의 물성 및 난연성, 신뢰성, 성형성 시험결과를 표 2와 표 4에 나타내었다. Physical properties and flame retardancy, reliability and moldability test results of the epoxy resin composition according to the present invention are shown in Table 2 and Table 4.
신뢰성 시험은 열 충격 시험에서의 패키지크랙 발생정도로 나타내었다.The reliability test was expressed as the degree of package crack in the thermal shock test.
* 물성평가 방법* Property evaluation method
1) 스파이럴 플로우(Spiral Flow)1) Spiral Flow
EMMI 규격을 기준으로 금형을 제작하여 성형온도 175℃, 성형압력 70Kgf/㎠에서 유동길이를 평가하였다. Molds were manufactured based on the EMMI standard, and the flow length was evaluated at a molding temperature of 175 ° C. and a molding pressure of 70 Kgf / cm 2.
2) 유리전이온도(Tg)2) Glass transition temperature (Tg)
TMA(Thermomechanical Analyser)로 평가하였다. It was evaluated by TMA (Thermomechanical Analyser).
3) 열팽창계수(α1,α2)3) coefficient of thermal expansion (α1, α2)
ASTM D696에 의해 평가하였다. Evaluation was made by ASTM D696.
4) 흡습률 4) moisture absorption rate
섭씨121℃ 100%RH 2기압의 항온 항습기에서 24시간 흡습시킨 후 상온으로 식을때 까지 기다려 질량을 잰 후 측정한 질량값을 이용하여 하기 식1과 같이 흡습률을 계산한다. After absorbing moisture in a constant temperature and humidity chamber at 121 ° C and 100% RH 2 atmospheres for 24 hours, wait until it cools down to room temperature, weigh the mass, and calculate the moisture absorption rate using the measured mass value as shown in Equation 1 below.
[식 1] [Equation 1]
흡습률(%) = (흡습후 시편의 질량-흡습전 시편의 질량)*100 /(흡습전 시편의 질량) Moisture absorption rate (%) = (mass of specimen after moisture absorption-mass of specimen before absorption) * 100 / (mass of specimen before absorption)
5) 접착성 5) Adhesive
에폭시 수지 조성물을 PSR,PSPI, Si 소재에 MPS 성형기를 이용하여 175℃,60초간 성형 직후, Pin 접착성을(접착면적2mm*2mm) 평가하였다. Pin adhesiveness (adhesive area 2mm * 2mm) was evaluated immediately after shaping | molding an epoxy resin composition for PSR, PSPI, and Si material using 175 degreeC and 60 second using the MPS molding machine.
6) 휨 특성 6) bending characteristics
에폭시 수지 조성물로 제조한 144FBGA형 반도체 소자를 MPS 성형기를 이용하 여 175℃ 60초간 성형직후, 175℃,6시간 후경화 후, IR Reflow 250℃, 3cycle 후 사이버 스캔(Cyber Scan)으로 휨 특성을 평가하였다. The 144FBGA type semiconductor device made of epoxy resin composition was cured at 175 ° C for 60 seconds using MPS molding machine, and then cured after 175 ° C and 6 hours after curing for 6 hours. It was.
7) 난연성 7) Flame retardant
UL 94 V-O 규격에 준하여 평가. Evaluated according to UL 94 V-O standard.
8) 내크랙성 평가(신뢰성 시험) 8) Crack resistance evaluation (reliability test)
프리컨디션(Precondition) 후 열충격 환경시험기(Temperature Cycle Test)에서 1,000사이클 경과 후, 비파괴 검사기인 SAT(Scanning Acoustic Tomograph)로 크랙발생유무를 평가하였다.After preconditioning and after 1,000 cycles in a thermal shock environment tester (Temperature Cycle Test), the occurrence of cracks was evaluated by a non-destructive tester SAT (Scanning Acoustic Tomograph).
a) 프리컨디션조건 a) Precondition
에폭시 수지 조성물로 제조한 144FBGA형 반도체 소자를 125℃에서 24시간 건조시킨 후 5 사이클의 열충격시험을 거쳐 다시 85℃, 85% 상대습도 조건 하에서 168시간 동안 방치시킨 후 250℃, 10초 동안 IR 리플로우를 3회 통과시켜 1차로 프리컨디션 조건 하에서의 패키지 크랙발생 유무를 평가하였다. 이 단계에서 크랙이 발생되었을 경우, 다음 단계인 1,000 사이클의 열충격 시험은 진행하지 않았다.The 144FBGA type semiconductor device manufactured from the epoxy resin composition was dried at 125 ° C. for 24 hours, and then subjected to 5 cycles of thermal shock test, and then left at 85 ° C. and 85% relative humidity for 168 hours and then 250 ° C. and IR ripple for 10 seconds. Rows were passed three times to evaluate package cracking under preconditions first. If cracks occurred at this stage, the next stage, the 1,000 cycle thermal shock test, was not conducted.
b) 열충격 시험 b) thermal shock test
앞서의 프리컨디션 조건을 통과한 반도체 패키지를 -65℃에서 10분, 25℃에서 5분, 150℃에서 10분씩 방치하는 것을 1 사이클로하여 1,000 사이클을 진행한 후, 비파괴 검사기인 SAT를 이용하여 내부 및 외부 크랙을 평가하였다.After 1,000 cycles of the semiconductor package that passed the preconditions were allowed to stand for 10 minutes at -65 ° C, 5 minutes at 25 ° C, and 10 minutes at 150 ° C for 1 minute, the internal package was used by using a nondestructive tester SAT. And external cracks were evaluated.
[실시예 1 내지 3 및 비교예 1 내지 3][Examples 1-3 and Comparative Examples 1-3]
다음 표 1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조하였으며, 각 물성 및 신뢰성 평가결과를 표 2에 나타내었다.As shown in Table 1, each component was weighed to a given composition to prepare an epoxy resin composition in the same manner as in Example, and the results of evaluation of physical properties and reliability are shown in Table 2.
상기 표 2에 나타난 바와 같이 본 발명에 의한 수지 조성물이 기존의 비교예에 비하여 난연성, 휨특성, 접착성, 내습성 및 신뢰성 면에서도 우수한 특성을 나타내고 있음을 알 수 있다. As shown in Table 2, it can be seen that the resin composition according to the present invention exhibits excellent properties in terms of flame retardancy, bending property, adhesion, moisture resistance, and reliability, as compared with the conventional comparative examples.
본 발명에 의하여 우수한 난연성과 내습성, 접착성 및 휨 특성과 신뢰성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물을 제공할 수 있다.According to the present invention, it is possible to provide an epoxy resin composition for sealing semiconductor elements excellent in flame retardancy, moisture resistance, adhesion, warpage characteristics, and reliability.
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