KR20060010517A - 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 - Google Patents
연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 Download PDFInfo
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- KR20060010517A KR20060010517A KR1020040059245A KR20040059245A KR20060010517A KR 20060010517 A KR20060010517 A KR 20060010517A KR 1020040059245 A KR1020040059245 A KR 1020040059245A KR 20040059245 A KR20040059245 A KR 20040059245A KR 20060010517 A KR20060010517 A KR 20060010517A
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- Prior art keywords
- slurry
- polishing
- abrasive particles
- surface area
- polishing slurry
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- 239000002002 slurry Substances 0.000 title claims abstract description 121
- 238000005498 polishing Methods 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 title claims description 11
- 238000007517 polishing process Methods 0.000 title claims description 4
- 239000002245 particle Substances 0.000 claims abstract description 96
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 52
- 230000008569 process Effects 0.000 claims abstract description 33
- 239000006185 dispersion Substances 0.000 claims abstract description 32
- 238000003801 milling Methods 0.000 claims abstract description 18
- 239000002270 dispersing agent Substances 0.000 claims abstract description 15
- 239000000654 additive Substances 0.000 claims abstract description 12
- 238000001354 calcination Methods 0.000 claims description 29
- 230000002776 aggregation Effects 0.000 claims description 20
- 238000004220 aggregation Methods 0.000 claims description 13
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 8
- 238000005054 agglomeration Methods 0.000 claims description 7
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 7
- 239000012498 ultrapure water Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 229920006318 anionic polymer Polymers 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- -1 macroparticles Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 230000008859 change Effects 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 11
- 238000000527 sonication Methods 0.000 description 6
- 238000001914 filtration Methods 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 4
- 230000032683 aging Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000005587 carbonate group Chemical group 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002498 deadly effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010316 high energy milling Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000010951 particle size reduction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
하소조건 | 표면적 (m2/g) | dD15 (nm) | dD50 (nm) |
700℃ 2H | 72 | 303 | 152 |
700℃ 4H | 17 | 99 | 51 |
800℃ 4H | 3 | 39 | 23 |
구분 | 단위 질량당 표면적(Surface Area per unit weight) | 산화막 연마 속도(Å/min) | 질화막 연마 속도(Å/min) | 산화막:질화막 연마비 (선택비) | WIWNU(%) | 산화막 잔류 입자(>0.20㎛, #) | 스크래치(#) |
제 1 슬러리 | 72 | 2532 | 49 | 51.7 | 1.0 | 440 | 3 |
제 2 슬러리 | 17 | 2621 | 49 | 53.5 | 1.0 | 210 | 2 |
제 3 슬러리 | 5 | 2680 | 50 | 53.6 | 1.0 | 150 | 1 |
비교예 | 종래기술 | 2105 | 49 | 42.9 | 1.1 | 780 | 9 |
Claims (11)
- 연마입자를 포함하는 연마용 슬러리에 있어서,상기 연마 입자의 단위 질량 당 표면적을 변화시켜 상기 연마 입자의 응집을 최소화 하고, 분산 안정성을 강화한 연마용 슬러리.
- 제 1 항에 있어서, 상기 연마 입자의 단위 질량 당 표면적이 1㎡/g 내지 100㎡/g인 연마용 슬러리.
- 제 1 항에 있어서, 상기 연마 입자의 단위 질량 당 표면적이 3 ㎡/g 내지 72㎡/g인 연마용 슬러리.
- 제 1 항에 있어서, 상기 연마 입자의 단위 질량 당 표면적이 5 ㎡/g 내지 25㎡/g인 연마용 슬러리.
- 제 1 항에 있어서, 상기 연마 입자의 단위 질량당 표면적은 하소 공정의 최고 온도에서 정체되는 시간 또는 밀링공정에 따라 제어되는 연마용 슬러리.
- 제 5 항에 있어서, 상기 하소 공정의 최고 온도에서 정체되는 시간은 30분 내지 4 시간인 연마용 슬러리.
- 제 5 항에 있어서, 상기 하소 공정의 최고 온도는 500 내지 1000℃ 범위인 연마용 슬러리.
- 제 5 항에 있어서, 상기 밀링 공정은 패스형 밀링을 실시하여 적어도 3회 이상 실시하는 연마용 슬러리.
- 제 1 항 내지 제 8 항 중 어느 한 항에 있어서, 상기 연마 입자는 세리아인 연마용 슬러리.
- 원료 전구체로 200g 내지 1000g의 세리움 카보네이트를 마련하는 단계; 및상기 세리움 카보네이트를 500℃ 내지 1000℃의 온도범위 내에서 30분 내지 4시간 동안 하소하여 연마입자를 제조하는 단계; 및상기 연마 입자에 초순수, 분산제 및 첨가제를 혼합 및 첨가하여 슬러리를 제조하는 단계를 포함하는 연마용 슬러리의 제조 방법.
- 연마 입자의 단위 질량 당 표면적을 변화시켜 상기 연마 입자의 응집을 최소 화 하고, 분산 안정성을 강화한 연마용 슬러리를 사용하여 소정의 기판을 연마하는 기판의 연마 방법.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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KR1020040059245A KR100638317B1 (ko) | 2004-07-28 | 2004-07-28 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
TW094124647A TWI273632B (en) | 2004-07-28 | 2005-07-21 | Polishing slurry, method of producing same, and method of polishing substrate |
CNA2005100871817A CN1737071A (zh) | 2004-07-28 | 2005-07-27 | 抛光浆料及其制备方法和抛光基板的方法 |
CN2007101358108A CN101092543B (zh) | 2004-07-28 | 2005-07-27 | 抛光浆料及其制备方法和抛光基板的方法 |
US11/193,094 US20060032149A1 (en) | 2004-07-28 | 2005-07-28 | Polishing slurry, method of producing same, and method of polishing substrate |
US12/333,179 US20090100765A1 (en) | 2004-07-28 | 2008-12-11 | Polishing slurry, method of producing same, and method of polishing substrate |
US12/333,170 US8361177B2 (en) | 2004-07-28 | 2008-12-11 | Polishing slurry, method of producing same, and method of polishing substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020040059245A KR100638317B1 (ko) | 2004-07-28 | 2004-07-28 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20060010517A true KR20060010517A (ko) | 2006-02-02 |
KR100638317B1 KR100638317B1 (ko) | 2006-10-25 |
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KR1020040059245A KR100638317B1 (ko) | 2004-07-28 | 2004-07-28 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
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KR (1) | KR100638317B1 (ko) |
CN (2) | CN1737071A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102967632B (zh) * | 2012-11-30 | 2016-01-20 | 淄博包钢灵芝稀土高科技股份有限公司 | 用电导率指导抛光粉生产和产品质量控制的方法 |
US20180370848A1 (en) * | 2015-12-16 | 2018-12-27 | Rhodia Operations | Method for polishing a phosphate glass or a fluorophosphate glass substrate |
KR20200057374A (ko) * | 2018-11-16 | 2020-05-26 | 주식회사 케이씨텍 | 연마 슬러리 조성물 및 그의 제조방법 |
CN110128950A (zh) * | 2019-06-18 | 2019-08-16 | 拓米(成都)应用技术研究院有限公司 | 一种玻璃抛光剂及其制备方法、抛光毛刷 |
CN111929337A (zh) * | 2020-06-17 | 2020-11-13 | 宁波锦越新材料有限公司 | 一种Al-Zn-Mg-Cu合金的EBSD试样制备方法及EBSD试样 |
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KR940000121A (ko) * | 1992-06-02 | 1994-01-03 | 박배덕 | 자연암토 종이를 혼합한 세라믹 피부미용팩 |
EP0939431B1 (en) * | 1996-09-30 | 2009-05-20 | Hitachi Chemical Co., Ltd. | Cerium oxide abrasive and method of abrading substrates |
JP2000038573A (ja) * | 1998-05-19 | 2000-02-08 | Showa Denko Kk | 半導体装置用金属膜研磨スラリ― |
US6964923B1 (en) * | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
WO2002044300A2 (en) * | 2000-11-30 | 2002-06-06 | Showa Denko K.K. | Cerium-based abrasive and production process thereof |
JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
KR100560223B1 (ko) * | 2002-06-05 | 2006-03-10 | 삼성코닝 주식회사 | 고정도 연마용 금속 산화물 분말 및 이의 제조방법 |
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2004
- 2004-07-28 KR KR1020040059245A patent/KR100638317B1/ko active IP Right Grant
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2005
- 2005-07-27 CN CNA2005100871817A patent/CN1737071A/zh active Pending
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Publication number | Publication date |
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CN101092543B (zh) | 2012-12-05 |
CN1737071A (zh) | 2006-02-22 |
CN101092543A (zh) | 2007-12-26 |
KR100638317B1 (ko) | 2006-10-25 |
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