KR20050069929A - Ｓｏｉ 웨이퍼 및 ｓｏｉ 웨이퍼의 제조방법 - Google Patents

Ｓｏｉ 웨이퍼 및 ｓｏｉ 웨이퍼의 제조방법 Download PDF

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Publication number
KR20050069929A
KR20050069929A KR1020047010436A KR20047010436A KR20050069929A KR 20050069929 A KR20050069929 A KR 20050069929A KR 1020047010436 A KR1020047010436 A KR 1020047010436A KR 20047010436 A KR20047010436 A KR 20047010436A KR 20050069929 A KR20050069929 A KR 20050069929A
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KR
South Korea
Prior art keywords
wafer
soi
region
silicon
soi wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020047010436A
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English (en)
Korean (ko)
Inventor
마사히로 사쿠라다
노부아키 미타무라
이즈미 후세가와
토모히코 오오타
Original Assignee
신에쯔 한도타이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 신에쯔 한도타이 가부시키가이샤 filed Critical 신에쯔 한도타이 가부시키가이샤
Publication of KR20050069929A publication Critical patent/KR20050069929A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H10P90/1916—
    • H10W10/181—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Element Separation (AREA)
KR1020047010436A 2002-10-31 2003-10-24 Ｓｏｉ 웨이퍼 및 ｓｏｉ 웨이퍼의 제조방법 Ceased KR20050069929A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00317634 2002-10-31
JP2002317634A JP2004153081A (ja) 2002-10-31 2002-10-31 Ｓｏｉウエーハ及びｓｏｉウエーハの製造方法

Publications (1)

Publication Number Publication Date
KR20050069929A true KR20050069929A (ko) 2005-07-05

Family

ID=32211731

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047010436A Ceased KR20050069929A (ko) 2002-10-31 2003-10-24 Ｓｏｉ 웨이퍼 및 ｓｏｉ 웨이퍼의 제조방법

Country Status (5)

Country Link
EP (1) EP1557883A4 (enExample)
JP (1) JP2004153081A (enExample)
KR (1) KR20050069929A (enExample)
TW (1) TW200413581A (enExample)
WO (1) WO2004040650A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5023451B2 (ja) * 2004-08-25 2012-09-12 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、シリコン単結晶育成方法
JP4661204B2 (ja) 2004-12-16 2011-03-30 信越半導体株式会社 単結晶の製造方法およびアニールウェーハの製造方法ならびにアニールウェーハ
JP5183874B2 (ja) * 2004-12-28 2013-04-17 信越化学工業株式会社 Ｓｏｉウエーハの製造方法
WO2007074552A1 (ja) * 2005-12-27 2007-07-05 Shin-Etsu Chemical Co., Ltd. Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ
JP2007194514A (ja) * 2006-01-23 2007-08-02 Mitsubishi Electric Corp 半導体装置の製造方法
JP2008153411A (ja) * 2006-12-18 2008-07-03 Shin Etsu Chem Co Ltd Ｓｏｉ基板の製造方法
JP4820801B2 (ja) * 2006-12-26 2011-11-24 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの製造方法
JP5151628B2 (ja) * 2008-04-02 2013-02-27 信越半導体株式会社 シリコン単結晶ウエーハ、シリコン単結晶の製造方法および半導体デバイス
DE112013002642T5 (de) * 2012-05-23 2015-03-19 Lg Siltron Incorporated Einkristall-Silizium-lngot und Wafer und Vorrichtung und Verfahren zum Wachsenlassen des Ingots
KR101472349B1 (ko) * 2013-05-21 2014-12-12 주식회사 엘지실트론 반도체용 실리콘 단결정 잉곳 및 웨이퍼

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832040A (ja) * 1994-07-14 1996-02-02 Nec Corp 半導体装置
JP3500063B2 (ja) * 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
JP3618254B2 (ja) * 1998-06-02 2005-02-09 信越半導体株式会社 Ｓｏｉ基板の製造方法
JP3943717B2 (ja) * 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP2001044441A (ja) * 1999-07-29 2001-02-16 Sony Corp 完全空乏ｓｏｉ型半導体装置及び集積回路
JP2001044398A (ja) * 1999-07-30 2001-02-16 Mitsubishi Materials Silicon Corp 張り合わせ基板およびその製造方法
JP2001144275A (ja) * 1999-08-27 2001-05-25 Shin Etsu Handotai Co Ltd 貼り合わせｓｏｉウエーハの製造方法および貼り合わせｓｏｉウエーハ
JP3994602B2 (ja) * 1999-11-12 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびその製造方法並びにｓｏｉウエーハ
JP2002184961A (ja) * 2000-09-29 2002-06-28 Canon Inc Ｓｏｉ基板の熱処理方法およびｓｏｉ基板
JP3994665B2 (ja) * 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
JP2002226296A (ja) * 2001-01-31 2002-08-14 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
JP3982218B2 (ja) * 2001-02-07 2007-09-26 ソニー株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP1557883A4 (en) 2009-12-30
JP2004153081A (ja) 2004-05-27
EP1557883A1 (en) 2005-07-27
TW200413581A (en) 2004-08-01
TWI338058B (enExample) 2011-03-01
WO2004040650A1 (ja) 2004-05-13

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