KR20050068209A - In plane switching mode liquid crystal display device and method of fabricating thereof - Google Patents

Abstract

The transverse electric field mode liquid crystal display device of the present invention forms a plurality of domains to prevent color conversion in the viewing angle direction, and includes a plurality of gate lines and data lines formed on a substrate to define a plurality of pixels, and And a driving element formed therein and an electrode formed in a mesh shape in the pixel to form a transverse electric field. The electrode includes a plurality of pixel electrodes arranged substantially parallel to the data line, and a common electrode disposed at a predetermined angle with the pixel electrode and bent at least once to form a plurality of domains with the pixel electrode.

Description

Transverse electric field mode liquid crystal display device and manufacturing method therefor {IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field mode liquid crystal display device. In particular, a pixel electrode and a common electrode forming a transverse electric field are formed in a mesh shape to divide a pixel into a plurality of domains to prevent deterioration in image quality due to color conversion. The present invention relates to a field mode liquid crystal display device.

Recently, with the development of various portable electronic devices such as mobile phones, PDAs, and notebook computers, there is a growing demand for flat panel display devices for light and thin applications. Such flat panel displays are being actively researched, such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), FED (Field Emission Display), VFD (Vacuum Fluorescent Display), but mass production technology, ease of driving means, Liquid crystal display devices (LCDs) are in the spotlight for reasons of implementation.

The liquid crystal display device has various display modes according to the arrangement of the liquid crystal molecules. However, the liquid crystal display device of the TN mode is mainly used because of the advantages of easy monochrome display, fast response speed, and low driving voltage. In such a TN mode liquid crystal display device, liquid crystal molecules aligned horizontally with the substrate are almost perpendicular to the substrate when a voltage is applied. Therefore, there is a problem that the viewing angle is narrowed upon application of voltage due to the refractive anisotropy of the liquid crystal molecules.

In order to solve this viewing angle problem, liquid crystal display devices of various modes having wide viewing angle characteristics have recently been proposed, but among them, the liquid crystal display device of the lateral field mode (In Plane Switching Mode) is applied to actual production. It is produced. The IPS mode liquid crystal display device aligns liquid crystal molecules in a plane by forming at least one pair of electrodes arranged in parallel in a pixel to form a transverse electric field substantially parallel to the substrate.

1 is a view showing the structure of a conventional IPS mode liquid crystal display device. FIG. 1A is a plan view and FIG. 1B is a sectional view taken along the line II ′ of FIG. 1A. As shown in FIG. 1A, pixels of the liquid crystal panel 1 are defined by gate lines 3 and data lines 4 arranged vertically and horizontally. Although only the (n, m) th pixels are shown in the drawing, in the liquid crystal panel 1, n and m gate lines 3 and data lines 4 are disposed, respectively, and thus the liquid crystal panel 1 is disposed. N x m pixels are formed throughout. The thin film transistor 10 is formed at the intersection of the gate line 3 and the data line 4 in the pixel. The thin film transistor 10 includes a gate electrode 11 to which a scan signal is applied from the gate line 3, and a semiconductor layer formed on the gate electrode 11 and activated as a scan signal is applied to form a channel layer. 12 and a source electrode 13 and a drain electrode 14 formed on the semiconductor layer 12 and to which an image signal is applied through the data line 4. The image signal input from the outside is applied to the liquid crystal layer. do.

In the pixel, a plurality of common electrodes 5 and a pixel electrode 7 are arranged substantially parallel to the data line 4. In addition, a common line 16 connected to the common electrode 5 is disposed in the middle of the pixel, and a pixel electrode line 18 connected to the pixel electrode 7 is disposed on the common line 16. It overlaps with the common line 16. Storage capacitance is formed in the transverse electric field mode liquid crystal display by overlapping the common line 16 and the pixel electrode line 18.

In the IPS mode liquid crystal display device configured as described above, the liquid crystal molecules are aligned substantially in parallel with the common electrode 5 and the pixel electrode 7. When the thin film transistor 10 is operated to apply a signal to the pixel electrode 7, a transverse electric field substantially parallel to the liquid crystal panel 1 is generated between the common electrode 5 and the pixel electrode 7. Since the liquid crystal molecules rotate on the same plane along the transverse electric field, gray level inversion due to the refractive anisotropy of the liquid crystal molecules can be prevented.

The conventional IPS mode liquid crystal display device having the above structure will be described in more detail with reference to the cross-sectional view of FIG. 1B.

As shown in FIG. 1B, a gate electrode 11 is formed on the first substrate 20, and a gate insulating layer 22 is stacked over the entire first substrate 20. The semiconductor layer 12 is formed on the gate insulating layer 22, and the source electrode 13 and the drain electrode 14 are formed thereon. In addition, a passivation layer 24 is formed on the entire first substrate 20.

In addition, a plurality of common electrodes 5 are formed on the first substrate 20, and a pixel electrode 7 and a data line 4 are formed on the gate insulating layer 22 to form the common electrode 5. The transverse electric field E is generated between the pixel electrodes 7.

The black matrix 32 and the color filter layer 34 are formed on the second substrate 30. The black matrix 32 is to prevent light leakage into an area where the liquid crystal molecules do not operate. As shown in the drawing, the black matrix 32 is formed between the region of the thin film transistor 10 and between the pixel and the pixel (ie, the gate line and the data line). Area). The color filter layer 34 is composed of R (Red), B (Blue), and G (Green) to realize actual colors.

The liquid crystal layer 40 is formed between the first substrate 20 and the second substrate 30 to complete the liquid crystal panel 1.

As described above, in the IPS mode liquid crystal display device, the transverse electric field E is formed inside the liquid crystal layer 40 by the common electrode 5 and the pixel electrode 7 formed on the substrate 20 and the gate insulating layer 22, respectively. Is generated to drive the liquid crystal molecules inside the liquid crystal layer 40.

However, the following problems occur in the IPS mode liquid crystal display device as described above.

Although not shown in the drawing, an alignment layer for providing alignment control force to liquid crystal molecules is formed on the first substrate 20 and the second substrate 30, and each alignment layer includes a common electrode 5 and a pixel electrode 7. The orientation direction is determined to be substantially parallel (or constant angle) to the extension direction. When no signal is applied to the pixel electrode 7, the liquid crystal molecules of the liquid crystal layer 40 are aligned along the alignment direction (ie, substantially parallel to the common electrode 5 and the pixel electrode 7). When a signal is applied to the pixel electrode 7, an electric field is generated between the common electrode 5 and the pixel electrode 7, so that the liquid crystal molecules near the first substrate 20 are rotated (switched) along the electric field. Therefore, when a signal is applied, the liquid crystal molecules are twisted from the first substrate 20 to the second substrate 30, so that the alignment film (Y-direction, substantially extending direction of the electrodes 5, 7) of the alignment film In the parallel direction) and the viewing angle direction in the vertical direction (X-direction), color conversion of blue and yellow occurs, respectively, resulting in deterioration of image quality.

SUMMARY OF THE INVENTION The present invention has been made in view of the above, and color conversion can be prevented by forming a plurality of domains having different viewing angle directions by arranging a common electrode and a pixel electrode that generate a transverse electric field in a mesh in a pixel. An object of the present invention is to provide a transverse electric field mode liquid crystal display device and a method of manufacturing the same.

In order to achieve the above object, a transverse electric field mode liquid crystal display device according to the present invention comprises a plurality of gate lines and data lines formed on a first substrate and defining a plurality of pixels, driving elements formed in each pixel, and A plurality of first electrodes arranged in parallel with the data line, and the first electrode and the second electrode formed a transverse electric field, and bent at least once at a predetermined angle (θ).

The common electrode is made of an opaque metal or a transparent conductive material and is formed on the first substrate, and the pixel electrode is made of an opaque metal and formed on the gate insulating layer. In addition, the pixel electrode may be formed on the protective layer made of a transparent conductive material. The first electrode and the second electrode overlap at the bent portion of the second electrode to form a storage capacitor.

In addition, a method of manufacturing a transverse electric field mode liquid crystal display device according to the present invention includes providing a first substrate including a pixel region and a pad region, forming a gate electrode and a common electrode on the pixel region, and forming a pixel region on the first substrate. Forming a first pad on the substrate; forming a first insulating layer over the entire first substrate; and forming a semiconductor layer, a source / drain electrode, and the common electrode and a mesh on the first insulating layer of the pixel region. Forming a pixel electrode for generating a domain of the semiconductor substrate; laminating a second insulating layer over the entire first substrate; and bonding the first substrate and the second substrate to each other; Treating the first and second insulating layers with an atmospheric pressure plasma to open the pads.

Recently, various efforts have been made to prevent color conversion of IPS mode liquid crystal display devices. The most effective concept of preventing color conversion is to divide a pixel into a plurality of domains having different viewing angles and angles, thereby reducing the viewing angle of each domain. To compensate. The present invention is also applied to the present invention to prevent color conversion of the IPS mode liquid crystal display device.

In the case of a multi-domain IPS mode liquid crystal display device in which pixels are divided into a plurality of domains, a method of forming an electric field in different directions by forming a common electrode and pixel electrodes in a zigzag shape is known. Since the IPS mode liquid crystal display is composed of two domains that divide the domain only in one direction, for example, in the direction of extension of the data line or the gate line, it is very difficult to completely compensate for the viewing angle and prevent color conversion. .

However, in the present invention, color conversion can be completely prevented by dividing the pixel into three or more domains to compensate for the viewing angle. To this end, in the present invention, the common electrode and the pixel electrode formed in the pixel are formed in a mesh shape to form a plurality of domains having a viewing angle symmetrical with adjacent domains.

Hereinafter, an IPS mode liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a view showing an IPS mode liquid crystal display device according to a first embodiment of the present invention. In this case, only one pixel is shown for convenience of description.

As illustrated in FIG. 2, pixels of the liquid crystal panel 101 are defined by gate lines 103 and data lines 104 arranged vertically and horizontally. The thin film transistor 110 is disposed at an intersection of the gate line 103 and the data line 104 in the pixel. The thin film transistor 110 includes a gate electrode 111 to which a scan signal is applied from the gate line 103, and a semiconductor layer formed on the gate electrode 111 and activated as a scan signal is applied to form a channel layer ( And a source electrode 113 and a drain electrode 114 formed on the semiconductor layer 112 and to which an image signal is applied through the data line 104.

A plurality of common electrodes 105 and pixel electrodes 107 are disposed in the pixels. As shown in the figure, a plurality of pixel electrodes 107 extend along the data line 104, while the common electrode 105 is disposed at a predetermined angle θ with the pixel electrode (or data line). It is repeatedly bent between the pixel electrodes 107 arranged in substantially parallel. That is, the common electrode 105 is zigzag formed between two parallel pixel electrodes 107. In this case, the common electrode 105 is connected to each other in the region where the pixel electrode 107 is formed. Substantially, the common electrode 105 is formed as one rather than electrically connected. From this point of view (the view that the common electrode 105 is made of one whole), the common electrode 105 may not be bent near the pixel electrode 107 but may cross the pixel electrode 107. will be.

In this case, although three pixel electrodes 107 are disposed substantially in parallel in the drawing, two or four or more pixel electrodes 107 may be disposed as necessary. In addition, although the common electrode 105 is bent twice at an angle of about 5 ° ≦ θ <90 ° with the pixel electrode 107, it may be bent once or three times or more. In the IPS mode liquid crystal display of the present invention, since the domain is formed by the common electrode 105 and the pixel electrode 107, the number of domains also increases when the number of bending of the common electrode 105 and the number of data lines 107 increase. do.

Meanwhile, the bent region or the crossing region of the common electrode 105 overlaps the pixel electrode 107. As will be described later, since an insulating layer is interposed between the common electrode 105 and the pixel electrode 107, a storage capacitance is formed by overlapping the common electrode 105 and the pixel electrode 107. Will be.

3A and 3B are cross-sectional views taken along lines II-II 'and III-III' of FIG. 2, respectively, and FIG. 3A is a diagram illustrating a structure of a thin film transistor, and FIG. 3B is a diagram illustrating a pixel structure. Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

As shown in FIG. 3A, the thin film transistor may include a gate electrode 111 formed on the first substrate 120, a gate insulating layer 122 stacked on the entire first substrate 120, and the gate insulating layer. The semiconductor layer 112 formed on the 122, the source electrode 113 and the drain electrode 114 formed on the semiconductor layer 112, and the protective layer 124 stacked over the entire first substrate 120. It is composed.

The gate electrode 111 is a single layer in which a metal such as Cu, Mo, Ta, Cr, Ti, Al, or Al alloy is deposited by evaporation or sputtering, and then etched by etchant. Or a plurality of layers.

The semiconductor layer 112 is formed by forming a semiconductor such as amorphous silicon (a-Si) by CVD (Chemical Vapor Deposition) method and then etching. The source electrode 113 and the drain electrode 114 may be formed by depositing a metal such as Mo, Ta, Cu, Ti, Al, or Al alloy by a deposition or sputtering method and then etching a single layer or a plurality of etchant. Consists of layers.

Meanwhile, a black matrix 132 is formed on the second substrate 130 to prevent leakage of light into the non-display area, and a color filter layer 134 is formed between the second substrate 130 to implement an image on the screen. have. As shown in the figure, the color filter layer 134 includes R, G, and B color filter layers. In addition, the liquid crystal layer 140 is formed between the first substrate 120 and the second substrate 130, and although not shown in the drawing, the flatness of the second substrate 130 is improved on the color filter layer 134. And an overcoat layer may be formed to protect the color filter layer 134. Although not shown in the drawings, an alignment layer having an alignment direction is formed on the first substrate 120 and the second substrate 130 to align the liquid crystal of the liquid crystal layer 140 in a predetermined direction, and the liquid crystal panel 101. A polarizer having a polarization direction perpendicular to each other is attached to the outside of the first substrate 120 and the second substrate 130.

As shown in FIG. 3B, the common electrode 105 is formed on the first substrate 120, and the pixel electrode 107 is formed on the gate insulating layer 122. The common electrode 105 is a single layer or a plurality of layers formed of the same material by the same process as the gate electrode 111 of the thin film transistor, and the pixel electrode 107 is the source electrode 113 and the drain electrode of the thin film transistor. It is a single layer or a plurality of layers formed of the same material by the same process as (114).

As shown in FIG. 4, the alignment direction (R, or rubbing direction) of the alignment layer (not shown) is determined along the Y-direction of the first substrate 120 and the second substrate 130. That is, the alignment direction of the alignment layers formed on the first substrate 120 and the second substrate 130 is formed along the extension direction of the pixel electrode 107. In addition, the polarization direction P1 of the first polarizing plate attached to the first substrate 120 and the polarization direction P2 of the second polarizing plate attached to the second substrate 130 are X-direction and Y-direction, respectively. It is formed along the extending direction of the gate line 103 and the extending direction of the data line 104.

The pixel is divided into a plurality of domains by the arrangement of the common electrode 105 and the pixel electrode 107 as described above. When no signal is applied to the pixel electrode 107, the liquid crystal molecules of the liquid crystal layer 140 are all aligned in the alignment direction R, that is, in the extension direction of the pixel electrode 107. When a signal is applied to the pixel electrode 107, a transverse electric field in a direction different from an adjacent domain is formed in the domain defined by the common electrode 105 and the pixel electrode 107. In this case, the transverse electric field of each domain is formed not only symmetrically with the transverse electric field of the domain adjacent to the side (or right and left) but also symmetrically with the transverse electric field of the domain adjacent to the top (or up and down). That is, the transverse electric field in each domain is symmetrical with the transverse electric field of adjacent domains in the left and right (ie, X-direction) and up and down (ie, Y-direction).

Meanwhile, the liquid crystal molecules near the first substrate 120 are switched along the transverse electric field formed in the corresponding domain in each domain by the transverse electric field as described above, while the liquid crystal molecules near the second substrate 130 are aligned in the alignment direction ( Is oriented along R1). In other words, the liquid crystal molecules are twisted from the first substrate 120 to the second substrate 130 by the generation of the transverse electric field. In each domain, transverse electric fields symmetrical with the transverse electric fields of adjacent domains are formed, so that the domains adjacent to each other are formed. Liquid crystal molecules are twisted in opposite directions to each other. The twist in the opposite directions of the liquid crystal molecules means that the viewing angles of the domains facing each other are opposite to each other, thereby compensating the viewing angle by the domains facing each other.

In the present invention, since the viewing angle characteristics of the X and Y directions are compensated in each domain, color conversion can be effectively prevented from occurring in the X and Y directions.

In the above description, although the common electrode 105 and the pixel electrode 107 are formed on the first substrate 120 and the gate insulating layer 122 each made of an opaque metal, the common electrode 105 and the pixel electrode 107 are formed. ) Need not be formed of a specific location and a specific material. That is, if the common electrode 105 and the pixel electrode 107 are alternately arranged in a rectangular shape in the pixel, it may be formed of any layer and material.

In the structure shown in FIG. 5, the pixel electrode 107 is formed by stacking and etching Cr, Mo, Ta, Cu, Ti, Al, or Al alloys, and the common electrode 105 is formed on the first substrate 120. It is formed by stacking and etching a transparent material such as Indium Tin Oxide (IZO) or Indium Zinc Oxide (IZO).

In the structure shown in FIG. 6A, an organic insulating layer is used as the protective layer 124, and the common electrode 105 is formed of Cu, Mo, Ta, Cr, Ti, Al, or Al alloy on the first substrate 120. The pixel electrode 107a is formed by stacking and etching the transparent conductive material such as ITO or IZO on the protective layer 124.

However, at this time, since the drain electrode 114 of the thin film transistor is formed on the gate insulating layer 122 and the pixel electrode 107a is formed on the protective layer 124, the drain electrode 114 and the pixel electrode 107a are electrically connected to each other. You must connect it.

Therefore, as shown in FIGS. 6B and 6C, the conductive metal layer 108, for example, the same metal as the drain electrode 114, Cr, Mo, Ta, which is formed under the pixel electrode 107a made of a transparent conductive material, is used. And forming a metal layer 108 formed of Cu, Ti, Al, or Al alloy, and then electrically connecting the pixel electrode 107a and the metal layer 108 through the contact hole 109 formed in the protective layer 124. . Since the metal layer 108 is electrically connected to the drain electrode 114 of the thin film transistor, a signal applied through the thin film transistor is supplied to the pixel electrode 107a through the metal layer 108. In the drawing, although the metal layer 108 is formed along the gate line 103 and the contact hole 109 is formed in the center region of the metal layer 108, the length of the metal layer 108 can be adjusted as necessary. The position of the contact hole 109 may also be adjusted as necessary. That is, the metal layer 108 and the contact hole 109 may be formed in any shape and any position as long as it can electrically connect the pixel electrode 107a to the drain electrode 114 of the thin film transistor.

Although not shown in the drawing, in the IPS mode liquid crystal display device of the present invention, both the common electrode and the pixel electrode may be made of transparent ITO or IZO.

7 is a diagram showing the structure of an IPS mode liquid crystal display device 201 according to a second embodiment of the present invention. The IPS mode liquid crystal display device of this embodiment has the same structure as the IPS mode liquid crystal display device shown in FIG. 2 except for the arrangement structure of the common electrode 205 and the pixel electrode 207. Therefore, only the structure different from the structure of the IPS mode liquid crystal display shown in FIG. 2 will be described.

As shown in the figure, in the IPS mode liquid crystal display device of this embodiment, a plurality of common electrodes 205 extend along the data line 204, and the pixel electrode 207 is set with the common electrode 205 and the set angle [theta]. ) Are repeatedly bent in a plurality of common electrodes 205 arranged in parallel to each other to form a zigzag pattern.

The bent portion or the intersection portion of the pixel electrode 207 overlaps with the common electrode 205 to form a storage capacitor. In the IPS mode liquid crystal display device having such a structure, the alignment direction (or rubbing direction) of the alignment layer and the polarization direction of the polarizing plate are the same as those shown in FIG. 4.

In addition, the IPS mode liquid crystal display device of this embodiment has the structure shown in Figs. 3B, 5 and 6A. That is, the common electrode 205 may be formed of a transparent conductive material such as opaque metal or ITO on the first substrate, and the pixel electrode 207 may also be formed of a transparent conductive material such as opaque metal or ITO on the gate insulating layer or the protective layer. It may be formed.

As described above, in the present invention, the common electrode and the pixel electrode extend along the data line or bend a plurality of times at a predetermined angle with the data line to form a plurality of domains. The common electrode and the pixel electrode are arranged in a mesh to form an electric field symmetrical with adjacent domains in each domain, and the common electrode and the pixel electrode may be formed on all possible layers. In addition, in the present invention, the number and the number of bending of the common electrode and the pixel electrode need not be limited.

Hereinafter, the manufacturing method of the IPS mode liquid crystal display element of the above structure is demonstrated. At this time, the drawing is a manufacturing method of the IPS mode liquid crystal display device having the structure shown in Fig. 5 (a), with reference to the drawings will be described a manufacturing method of the IPS mode liquid crystal display device.

First, as shown in FIG. 8A, a metal region, such as Cu, Mo, Ta, Cr, Ti, Al, or Al alloy, is laminated and etched on a first substrate 320 including a pixel region and a pad region. The gate electrode 311 and the first gate pad 352 are formed in the and pad regions, respectively. Subsequently, as shown in FIG. 8B, ITO or IZO is stacked and etched to form a rectangular common electrode 305 in the pixel region, and the second gate pad 353 is formed on the first gate pad 352 of the pad region. To form.

Subsequently, as shown in FIG. 8C, the gate insulating layer 322 is formed on the entirety of the first substrate 320 on which the common electrode 305 and the first gate pad 352 are formed. 312, a source electrode 313, a drain electrode 314, and a pixel electrode 307 are formed.

The semiconductor layer 312 and the source / drain electrodes 313 and 314 may be formed by a 2-mask process and a 1-mask process. In the 2-mask process, the semiconductor layer 312 and the source / drain electrodes 313 and 314 are formed by an etching process using a separate mask by sequentially stacking semiconductors and metals, respectively. After stacking, the semiconductor layer 312 and the source / drain electrodes 313 and 314 are formed by integrally etching the semiconductor and the metal using a diffraction mask.

Subsequently, as shown in FIG. 8D, a protective layer is formed over the entire first substrate 320. In the second substrate 330, a black matrix 332 made of Cr / CrOx or resin is formed in an image non-display area (eg, a thin film transistor forming area, a gate line and a data line forming area) of the pixel area. A color filter layer 334 made of R (Red), G (Green), B (Blue), and the like is formed in the image display area. In this case, an overcoat layer may be formed on the second substrate 330 to protect the color filter layer 334 and to improve flatness of the second substrate 330.

As described above, the first and second substrates 320 and 330 are bonded to each other by a sealing material, and then liquid crystal is injected between the first and second substrates 320 and 330. Form layer 340. In this case, the liquid crystal layer 340 may be formed by directly dispensing the liquid crystal onto the first substrate 320 or the second substrate 330 and then bonding the first substrate 320 and the second substrate 330 together. (In this case, the dropped liquid crystal spreads to the entire substrates 320 and 330 by the bonding force).

As shown in FIG. 8D, when the first substrate 320 and the second substrate 330 are bonded together, a pad region connected to an external driving element and receiving a signal is exposed to the outside. Subsequently, when the protective layer 324 and the gate insulating layer 322 on the pads 352 and 353 of the exposed pad region are treated with a plasma generated at normal pressure, as shown in FIG. 8E. The protective layer 324 and the gate insulating layer 322 are removed to expose the second pad 353 to the outside.

In general, the protective layer 324 must be etched using a mask to open the pad 352 in the fabrication of an IPS mode liquid crystal display device. However, in the present invention, the pad is used without the use of a mask (ie, without a photo process). By opening 352, it is possible to reduce the manufacturing process. In addition, as described above, when the common electrode 305 is formed of ITO or IZO, since ITO is formed on the first pad 352, a separate metal layer (mainly ITO or IZO) is used to prevent oxidation of the first pad 352. The process is further simplified since no patterning is required. Of course, when manufacturing the IPS mode liquid crystal display device having the structure shown in Fig. 2 or 5 (b) will have to include a step of forming an ITO pattern on the pad 352.

As described above, in the present invention, the common electrode and the pixel electrode are arranged in parallel with the data line or bent to form a mesh in the pixel. Therefore, the field-of-view angle is compensated by the plurality of domains, thereby preventing the color conversion from occurring in the X and Y-directions. The IPS mode liquid crystal display device of the present invention is not limited to a specific structure. The above-described structure is an example for explaining the present invention, and the present invention does not limit the scope of rights. For example, in the drawing, only three windows are formed in which three pixel electrodes are formed to implement an image in the pixel. However, in the present invention, at least three pixel electrodes are formed to form three or more windows. Could be Accordingly, the scope of the present invention should not be determined by the above detailed description, but should be determined by the appended claims.

As described above, in the present invention, at least one common electrode and the pixel electrode are arranged in a mesh in the pixel. Since a plurality of domains having different viewing-field angles are formed in the pixel, the viewing-field angle of the IPS mode liquid crystal display device is compensated to prevent blue color conversion and yellow color conversion in the X and Y directions.

1A is a plan view of a conventional transverse electric field mode liquid crystal display device.

FIG. 1B is a cross-sectional view taken along line II ′ of FIG. 1A.

2 is a plan view showing the structure of a transverse electric field mode liquid crystal display device according to a first embodiment of the present invention;

3A is a cross-sectional view taken along the line II-II ′ of FIG. 2.

3B is a cross-sectional view taken along the line III-III ′ of FIG. 2.

4 is a view showing an orientation direction and a polarization direction in the transverse electric field mode liquid crystal display device according to the present invention.

5 is a view showing another structure of the transverse electric field mode liquid crystal display device according to the present invention.

6A is a view showing another structure of the transverse electric field mode liquid crystal display device according to the present invention;

6B is a plan view of a transverse electric field mode liquid crystal display device having the structure shown in FIG. 6A.

6C is a cross-sectional view taken along a line IV-IV 'of FIG. 6B.

7 is a view showing the structure of a transverse electric field mode liquid crystal display device according to a second embodiment of the present invention.

8A to 8E illustrate a method of manufacturing a transverse electric field mode liquid crystal display device according to the present invention.

Explanation of symbols on main parts of drawing

101: liquid crystal panel 103: gate line

104: data line 110: thin film transistor

105: common electrode 107: pixel electrode

111 gate line 112 semiconductor layer

113: source electrode 114: drain electrode

120,130: substrate 122: gate insulating layer

124: protective layer 132: black matrix

134: color filter layer 352: pad

Claims (22)

A plurality of gate lines and data lines formed on the first substrate to define a plurality of pixels; A driving element formed in each pixel; A plurality of first electrodes arranged in parallel with the data lines in the pixel; And A transverse electric field mode liquid crystal display device comprising a transverse electric field formed with the first electrode and comprising a second electrode bent at least once at a predetermined angle (θ) with the first electrode. The transverse electric field mode liquid crystal display of claim 1, wherein the first electrode is a common electrode and the second electrode is a pixel electrode. The transverse electric field mode liquid crystal display of claim 1, wherein the first electrode is a pixel electrode and the second electrode is a common electrode. The transverse electric field mode liquid crystal display device according to claim 1, wherein 5 ° ≤θ <90. The transverse electric field mode liquid crystal display device of claim 1, wherein the driving device is a thin film transistor. The method of claim 5, wherein the thin film transistor, A gate electrode formed on the first substrate; An insulating layer stacked over the entire first substrate on which the gate electrode is formed; A semiconductor layer formed on the insulating layer; A source electrode and a drain electrode formed on the semiconductor layer; And The transverse electric field mode liquid crystal display device comprising a protective layer stacked over the entire first substrate on which the source electrode and the drain electrode are formed. The transverse electric field mode liquid crystal display device of claim 6, wherein the common electrode is formed on the first substrate, and the pixel electrode is formed on a gate insulating layer. The transverse electric field mode liquid crystal display device of claim 6, wherein the common electrode is formed on the first substrate, and the pixel electrode is formed on the passivation layer. The transverse electric field mode liquid crystal display device according to claim 8, wherein the protective layer is an organic protective layer. The semiconductor device of claim 8, further comprising a metal layer disposed on the gate insulating layer and connected to the pixel electrode through a contact hole formed in the protective layer to transfer a signal applied through the thin film transistor to the pixel electrode. Transverse electric field mode liquid crystal display device. The transverse electric field mode liquid crystal display of claim 1, wherein the first electrode and the second electrode overlap each other at the bent portion of the second electrode to form a storage capacitor. The method of claim 1, Second substrate; A black matrix formed on the second substrate; A color filter layer formed on the second substrate; And The transverse electric field mode liquid crystal display device further comprising a liquid crystal layer formed between the first substrate and the second substrate. Providing a first substrate including a pixel region and a pad region; Forming a gate electrode and a common electrode in the pixel area on the first substrate and forming a first pad in the pixel area; Forming a first insulating layer over the entire first substrate; Forming a semiconductor layer, a source / drain electrode, and a pixel electrode to generate a domain having a mesh shape with the common electrode on the first insulating layer of the pixel region; Stacking a second insulating layer over the entire first substrate; Bonding the first substrate and the second substrate to each other; And A method of manufacturing a transverse electric field mode liquid crystal display device comprising the steps of opening the pad by treating the first and second insulating layers of the pad region exposed to the outside with atmospheric pressure plasma. The method of claim 13, wherein the forming of the gate electrode, the common electrode, and the pad includes: Stacking a metal layer on the first substrate; And Etching the metal layer to form a gate electrode and a common electrode in the pixel region, and forming a pad in the pad region. 15. The method of claim 14, further comprising forming a transparent conductive layer over the pad of the pad region. The method of claim 13, wherein the forming of the gate electrode, the common electrode, and the pad includes: Stacking a metal layer on the first substrate; Etching the metal layer to form a gate electrode in a pixel region and forming a first pad in a pad region; Stacking a transparent conductive material on the first substrate; And Etching the transparent conductive material to form a common electrode in the pixel region and stacking a second pad on the first pad of the pad region to form a pad. The method of claim 13, wherein the forming of the semiconductor layer, the source / drain electrode and the pixel electrode comprises: Stacking a semiconductor on the first insulating layer and then etching to form a semiconductor layer; And Forming a source / drain electrode and a pixel electrode by laminating and etching a metal on the first insulating layer on which the semiconductor layer is formed. The method of claim 13, wherein the forming of the semiconductor layer, the source / drain electrode and the pixel electrode comprises: Sequentially stacking a semiconductor and a metal on the first insulating layer; And Forming a semiconductor layer, a source / drain electrode and a pixel electrode using a diffraction mask. A plurality of gate lines and data lines formed on the substrate to define a plurality of pixels; A driving element formed in each pixel; And A transverse electric field mode liquid crystal display device comprising an electrode formed in the pixel in a mesh shape to form a transverse electric field. The method of claim 19, wherein the electrode, A plurality of pixel electrodes arranged substantially parallel to the data lines; And And a common electrode disposed at a predetermined angle with the pixel electrode and bent at least once to form a plurality of domains with the pixel electrode. The method of claim 19, wherein the electrode, A plurality of common electrodes arranged substantially parallel to the data lines; And And a pixel electrode disposed at the set angle with the common electrode and bent at least once to form the common electrode and the plurality of domains. The transverse electric field mode liquid crystal display device according to claim 20 or 21, wherein each domain formed in the pixel has a viewing field angle direction symmetrical with an adjacent domain.