KR20070072275A - Vertical alignment mode liquid crystal display device and method of fabricating thereof - Google Patents

Abstract

A vertical alignment mode LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to form a protrusion as a passivation layer on a TFT(Thin Film Transistor) substrate, thereby reducing the manufacturing cost. The first substrate(101) and the second substrate(121) are divided into the first and second regions. A driving device is formed to the first region of the first substrate. The first passivation layer is formed on the upper portion of the driving device. At least one second passivation layer is formed within the second region and distorts the electric field. The first electrode is formed within the second region. The second electrode is formed on the second substrate so that the electric field is formed between the first and second electrodes. A liquid crystal layer(131) is formed between the first and second substrates. The symmetric electric field is formed between the first and second substrates with the second passivation layer as the center. The first passivation layer is an organic passivation layer.

Description

Vertical alignment mode liquid crystal display device and manufacturing method therefor {VERTICAL ALIGNMENT MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THEREOF}

1 is a plan view of a conventional vertical alignment mode liquid crystal display device.

FIG. 2 is a sectional view taken along the line II-II of FIG. 1, showing the structure of the thin film transistor.

3 is a cross-sectional view taken along the line III-III of FIG. 1 showing the structure of the pixel;

4A to 4D are cross-sectional views illustrating a method of manufacturing a vertical alignment mode liquid crystal display device according to the prior art;

5A through 5H are cross-sectional views illustrating a method of manufacturing the vertical alignment mode liquid crystal display device according to the present invention;

6 is a view showing another structure of the VA mode liquid crystal display device according to the present invention, showing a schematic diagram showing the electric field formation direction of the vertical alignment mode liquid crystal display device.

Explanation of symbols on main parts of drawing

101: insulating substrate 103: gate electrode

105: gate insulating film 107: semiconductor layer

109: conductive layer 109a: source electrode

109b: drain electrode 111: photosensitive film

111a and 111b photosensitive film pattern 113 organic film

115: projection 117: pixel electrode

121: color filter substrate 123: black matrix layer

125: color filter layer 127: common electrode

131: liquid crystal layer

The present invention relates to a vertical alignment mode liquid crystal display device and a manufacturing method thereof, and more particularly, to form a projection formed of a protective layer on a thin film transistor substrate to reduce the manufacturing cost and simplify the manufacturing process of the vertical alignment mode liquid crystal display device and It relates to a manufacturing method.

Recently, with the development of various portable electronic devices such as mobile phones, PDAs, and notebook computers, there is a growing demand for flat panel display devices for light and thin applications. Such flat panel displays are being actively researched, such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), FED (Field Emission Display), VFD (Vacuum Fluorescent Display), but mass production technology, ease of driving means, Liquid crystal display devices (LCDs) are in the spotlight for reasons of implementation.

The liquid crystal display device is manufactured by bonding a thin film transistor array substrate and a color filter substrate to each other and forming a liquid crystal layer between the thin film transistor array substrate and the color filter substrate.

In the thin film transistor array substrate, pixels are arranged in a matrix form, and a thin film transistor, a pixel electrode, and a capacitor are formed in the unit pixel, and the color filter substrate is a common electrode and an actual color for applying an electric field to the liquid crystal layer together with the pixel electrode. An RGB color filter and a black matrix are implemented to implement the.

On the other hand, an alignment layer having an alignment control force is formed on the opposite surface of the thin film transistor array substrate and the color filter substrate so that the liquid crystal molecules of the liquid crystal layer are aligned in a predetermined direction. The liquid crystal molecules oriented as described above are rotated by dielectric anisotropy when the electric field is formed between the pixel electrode formed for each unit pixel of the thin film transistor array substrate and the common electrode formed on the front surface of the color filter substrate, thereby passing light for each unit pixel. They can be turned on or off to display text or images. Such a method of displaying an image by driving liquid crystal molecules is called TN mode (Twisted Nematic mode).

However, such a TN mode liquid crystal display device has a disadvantage that the viewing angle is narrowed. This viewing angle problem is caused by the refractive anisotropy of the liquid crystal molecules. In the TN mode, the light transmittance is symmetrically distributed in the left and right viewing angles, but the light transmittance is asymmetrically distributed in the vertical direction. At the viewing angle in the vertical direction, a range in which the image is reversed is generated and the viewing angle is narrowed.

In order to solve the viewing angle problem, a multi-domain that compensates the viewing angle by dividing the pixel into at least two domains such as two domain TN (TDTN) or domain divided TN (DDTN) and changing the field of view angle of each domain domain) Liquid crystal display devices have been proposed.

However, in the case of the multi-domain liquid crystal display device, since the alignment of liquid crystal molecules in each domain must be different, a rubbing process must be performed in each domain. For example, in the case of 2-domain, photoresist is laminated on the second domain of the alignment layer to rub the second domain in the set direction in a state in which the second domain is blocked, thereby rubbing in the setting direction in the first direction. To form.

Thereafter, the photoresist of the second domain is removed, the photoresist is formed in the first domain, and then the second domain is rubbed to provide the alignment control force in the set direction. After rubbing of the second domain, the photoresist of the first domain is removed by a developing process.

As described above, in the multi-domain, two photo processes using a photoresist are required to rub one pixel (ie, one substrate), thereby increasing the manufacturing process and increasing the manufacturing cost. In addition, since a photo process such as a photoresist phenomenon affects the alignment film, there is a problem in that the quality of the manufactured liquid crystal display device is degraded.

A liquid crystal display device having a wide viewing angle structure proposed to solve the problem of the multi-domain as described above is a vertical alignment mode liquid crystal display device. In the VA mode, when the voltage is not applied, the long axes of the liquid crystal molecules are arranged perpendicular to the alignment layer, and when voltage is applied, the liquid crystal molecules having negative dielectric anisotropy are oriented obliquely with respect to the electric field. The long axis moves in a horizontal direction from a direction perpendicular to the vertical alignment layer to transmit light.

The VA mode liquid crystal display device is superior to the TN mode liquid crystal display device in terms of contrast ratio, response speed, and the like, and divides the alignment direction of the liquid crystal molecules into a plurality of directions, and is highly effective when using a compensation film. It has the advantage of realizing the viewing angle.

1 is a view showing the structure of a conventional VA mode liquid crystal display device. Although the liquid crystal display is substantially composed of a plurality of pixels, only one pixel is illustrated in the drawings for convenience of description.

Referring to FIG. 1, pixels defined by the gate line 13 and the data line 19 are divided into two regions A and B. Referring to FIG. The regions A and B are domain regions in which liquid crystal molecules are oriented in different directions, and the viewing angles in each domain region are compensated for each other, thereby improving viewing angle characteristics.

On the other hand, the pixel includes a thin film transistor 10 formed at an intersection of a gate line 13 to which a scan signal is applied from an external driving circuit and a data line 19 to which an image signal is applied. The thin film transistor 10 is connected to the gate line 13 and is formed on the gate electrode 13a to which a scan signal is applied, and is formed on the gate electrode 13a to be activated as the scan signal is applied to the gate electrode 13a. And a source electrode 19a and a drain electrode 19b formed on the semiconductor layer 17.

The pixel electrode 25 is connected to the drain electrode 19b to activate the semiconductor layer 17 to apply an image signal to operate the liquid crystal (not shown). In this case, reference numeral 33 in the drawing denotes a black matrix, which is formed in the thin film transistor 10, the gate line 13, and the data line 19 to prevent light from being transmitted to the region.

The VA mode liquid crystal display device configured as described above will be described in detail with reference to FIGS. 2 and 3 as follows.

FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1 to show the structure of the thin film transistor, and FIG. 3 is a cross-sectional view taken along line III-III of FIG. 1 to show the structure of the pixel.

Referring to FIG. 2, the thin film transistor 10 includes a gate electrode 13a formed on a first substrate 11 made of a transparent insulating material such as glass, and a gate insulating layer formed over the entire first substrate 11. And a semiconductor layer 17 formed on the gate insulating layer 15, a source electrode 19a and a drain electrode 19b formed on the semiconductor layer 17, and the thin film transistor 10 A passivation layer 24 is formed over the entire first substrate 11. A pixel electrode 23 is formed on the passivation layer 21, and a contact hole is formed in the passivation layer 21 so that the pixel electrode 23 is formed in the thin film transistor 10 through the contact hole. It is electrically connected to the drain electrode 19b.

On the other hand, the second substrate 31 has a black matrix 33 for preventing light from transmitting to the image non-display area in which the thin film transistor 10 is formed, and R (Red) formed in the pixel to implement color; A color filter layer 35 of G (Green) and B (Blue) and a common electrode 37 forming an electric field with the pixel electrode 23 when an image signal is applied on the color filter layer 35. In addition, a liquid crystal layer 41 is formed between the first substrate 11 and the second substrate 31. Although not shown in the drawing, an alignment layer for orienting liquid crystal molecules is formed on the pixel electrode 23 and the common electrode 37.

Meanwhile, referring to FIG. 3, a protrusion 39 made of an insulating material is formed at a boundary between the first region A and the second region B on the common electrode 37. As such, the reason why the protrusion 39 is formed on the common electrode 37 between the first and second regions A and B is due to the electric field between the pixel electrode 23 and the common electrode 37. E) to distort. As shown in FIG. 3, the electric field between the pixel electrode 23 and the common electrode 37 is formed symmetrically about the protrusion 39 by the protrusion 39.

Accordingly, the liquid crystal molecules arranged along the electric field are also symmetrically arranged along the slit, so that the first region A and the second region B are formed of two domains having different alignment directions from each other.

However, in the aforementioned multi-domain liquid crystal display device, a rubbing process is required twice (or more), whereas in the VA mode liquid crystal display device, a rubbing process is not necessary and a separate photo process is not necessary. Therefore, the manufacturing process can be simplified and the breakage of the alignment film caused by the photo process can be prevented.

Hereinafter, a method of manufacturing a liquid crystal display device according to the related art having the above structure will be described with reference to FIGS. 4A to 4D. In this case, the thin film transistor and the pixel region are simultaneously shown for convenience of description.

As shown in FIG. 4A, a metal material is stacked on the first substrate 11 and then referred to to form a gate electrode 13a, followed by a gate insulating layer 15 over the entire first substrate 11. To form.

Next, as shown in FIG. 4B, the semiconductor material is stacked on the gate insulating layer 15 and selectively etched to form the semiconductor layer 15 on the gate electrode 13a, and then the metal is stacked again. By etching, a source electrode 19a and a drain electrode 19b are formed on the semiconductor layer 15.

Subsequently, as shown in FIG. 4C, the protective layer 21 is formed over the entire first substrate 11 and then selectively etched to form a contact hole exposing the drain electrode, and then including the contact hole. The transparent conductive material for forming the pixel electrode is deposited on the protective layer 21.

Next, the transparent conductive material layer is selectively patterned to form a pixel electrode 23 electrically connected to the drain electrode 19b.

Meanwhile, as shown in FIG. 4D, the black matrix 33 and the color filter layer 35 are formed on the second substrate 31.

Subsequently, after the common electrode 37 is formed on the color filter layer 35, a photosensitive resin or the like is laminated on the pixel region (that is, the boundary region of two domains), and the protrusion 39 is formed by etching.

Thereafter, the first substrate 11 and the second substrate 31 are bonded to each other by a sealing material, and then a liquid crystal is injected between the first substrate 11 and the second substrate 31 to seal the liquid crystal layer 41. ).

In this case, the thin film transistor or pixel electrode formed on the first substrate 11 is formed by a photolithography process using a photoresist and a mask. In general, the complexity of the manufacturing process of the liquid crystal display device or the thin film transistor is determined by the number of photo processes, that is, the number of masks used.

In general, in a TN mode liquid crystal display device, a photo process using a mask is mainly used to form a thin film transistor and a pixel electrode on a first substrate and a black matrix on a second substrate. More masks are needed to form

Accordingly, in the above-described method for manufacturing a VA mode liquid crystal display device, a mask for a gate electrode, a mask for a semiconductor layer, a mask for a source electrode and a drain electrode, a mask for a contact hole of a protective layer, a mask for a pixel electrode, a mask for a black matrix, and an RGB color layer It is a 10-mask process that uses a total of 10 masks such as a mask and a protrusion forming mask (a well-known 5-mask thin film transistor array process and a 4-mask color filter process + 1-mask protrusion process). By the way, in order to simplify the manufacturing method of the VA mode liquid crystal display, a low mask method is currently being studied in which the number of masks is reduced to less than five (except a four-mask color filter process), but substantially less than five. The process of using the mask is not realized.

Accordingly, the present invention has been made to solve the above problems of the prior art, to provide a vertically aligned liquid crystal display device and a method of manufacturing the same, which can simplify the manufacturing process and significantly reduce the manufacturing cost by reducing the number of mask processes. There is this.

According to an exemplary embodiment of the present invention, a liquid crystal display device includes: a first substrate and a second substrate divided into a first region and a second region; A driving element formed in the first region of the first substrate; A first protective layer formed on the driving element; At least one second protective layer formed in the second region and distorting an electric field; A first electrode formed in the second region; A second electrode formed on the second substrate to form an electric field between the first electrode and the first electrode; And a liquid crystal layer formed between the first substrate and the second substrate.

In addition, the liquid crystal display device manufacturing method according to the present invention for achieving the above object comprises the steps of providing a first substrate consisting of a first region and a second region; Forming a driving element in the first region; Forming a photosensitive organic protective layer over the entire first substrate; Stacking the organic protective layer and exposing and developing the organic protective layer to form a first organic protective layer pattern and a second organic protective layer pattern in a first region and a second region, respectively; And forming a pixel electrode in the second region by laminating a transparent conductive material over the entire first substrate.

In addition, the liquid crystal display device according to the present invention for achieving the above object is a first substrate and a second substrate; A driving element formed on the first substrate; A photosensitive organic protective layer formed on the driving device; A pixel electrode formed on the first substrate; A common electrode formed on the second substrate; And a protrusion formed on the first substrate and distorting an electric field between the pixel electrode and the common electrode.

In addition, the liquid crystal display device manufacturing method according to the present invention for achieving the above object comprises the steps of providing a first substrate and a second substrate; Forming a driving element on the first substrate;

Forming a photosensitive organic protective layer over the entire first substrate; Patterning the photosensitive organic protective layer to form protrusions symmetrically forming an organic protective layer pattern and an electric field; Forming a pixel electrode on the first substrate; And forming a common electrode on the second substrate.

Hereinafter, a vertical alignment mode liquid crystal display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

5A to 5H are cross-sectional views illustrating a method of manufacturing the vertical alignment mode liquid crystal display device according to the present invention.

6 is a schematic diagram showing an electric field formation direction of a vertical alignment mode liquid crystal display device according to the present invention.

As shown in FIG. 5A, a gate electrode 103 formed of a single layer or a plurality of layers of Al, Al alloy, Cu, Cr, etc. is formed on a first substrate 101 including a TFT region and a pixel region. Subsequently, the gate insulating layer 105, the semiconductor 107, and the metal layer 109 are sequentially stacked on the entire first substrate 101, and then the photoresist layer 111 is coated on the metal layer 109.

Subsequently, as illustrated in FIG. 5B, ultraviolet rays are irradiated onto the photosensitive film 111 through a mask for diffraction exposure and then developed to form the photosensitive film pattern 111a. At this time, the photoresist is removed in the pixel region, and the photoresist pattern 111a is formed only in the TFT region. In addition, since the intensity of the light irradiated to the TFT region is changed by the slit formed in the diffraction mask, part of the photoresist pattern on the gate electrode 103 is removed, while the photoresist on the upper sides of the gate electrode 103 is removed. The pattern portion remains as it is, and a photosensitive film pattern 111a having a different thickness is formed.

Next, as shown in FIG. 5C, when the metal layer 109 and the semiconductor 107 are continuously etched while the metal layer 109 is blocked with the photosensitive film pattern 111a, the semiconductor layer 107 is formed in the TFT region. And a metal layer 109 is formed. In this case, the data line 109 is also formed, and the semiconductor layer 107 remains under the data line 109. Subsequently, when the photoresist pattern 111a is ashed, a portion of the photoresist layer having a thin thickness on the gate electrode 103 is removed while only a portion of the photoresist portion 111a on both sides thereof is removed.

Next, as shown in FIG. 5D, the metal layer pattern 109 is etched using the partially removed photoresist pattern 111a as a mask, and then the photoresist pattern 111a is removed to form a source on the semiconductor layer 107. The electrode 109a and the drain electrode 109b are formed.

Subsequently, as illustrated in FIG. 5E, the photosensitive organic protective layer 113 is formed by thickly stacking a photosensitive organic material such as BCB or photoacryl over the entire first substrate 101. In this case, the photosensitive organic material used as the photosensitive organic protective layer is self-sensitive, so it is not necessary to use a separate photoresist. The photosensitive organic material used as the protective layer is deposited to a thickness of about 1 μm or more, preferably 1 μm to 4 μm.

Subsequently, as shown in FIG. 5F, the organic protective layer 113 is exposed and developed using a photolithography process technique using an exposure mask, and then the organic protective layer 113 is selectively etched to form the pixel region portion. The organic protective layer pattern 113a and the protrusion forming portion 113b exposing the same are formed. At this time, the organic protective layer pattern remains only on the projection region and the data line portion of the TFT region and the pixel region.

Subsequently, as shown in FIG. 5G, the exposed portion of the gate insulating layer 105 is etched using the organic protective layer pattern 113a and the protrusion forming portion 113b as a mask to form the first substrate 101 of the pixel region. ) And a portion of the drain electrode 109b in the TFT region are formed to form a protrusion 115 composed of a portion of the gate insulating layer 105 and a protrusion forming portion 113b.

Then, a conductive layer is deposited by laminating a transparent conductive material such as ITO or IZO by sputtering or vapor deposition. In this case, the conductive layer includes an organic passivation layer 113a on the TFT region, a first substrate 101 portion, a protrusion forming portion 113b of the exposed pixel region, and an organic passivation layer on the data line 109. It is formed only in the layer 113a. At this time, since the organic protective layer is thickly deposited, no conductive layer is deposited on the sidewalls of the organic protective layer 113a and the protrusion 115.

In this way, the pixel electrode 117 is formed on the TFT region, on the pixel region of the first substrate 101 and on the drain electrode 109b exposed to the outside. In this case, the transparent electrode portion on the organic protective layer 113a formed of the photoacrylic material may be used as a Vcom electrode, and the Vcom electrode may be connected by Ag dot (dotting) method.

Meanwhile, as shown in FIG. 5H, the black matrix 123 and the color filter layers 125 of R, G, and B are formed on the second substrate 121. In addition, although not shown in the drawing, an overcoat layer or a protective layer for planarization may be formed on the color filter layer 125.

Subsequently, after the transparent conductive material such as ITO or IZO is stacked on the color filter layer 125 to form a common electrode 127, the first substrate 101 and the second substrate 121 are bonded to each other by a sealing material. The liquid crystal layer 131 is formed between the first substrate 101 and the second substrate 121 to complete the liquid crystal display device in the vertical alignment mode.

As described above, the VA mode liquid crystal display device manufacturing method of the present invention requires three masks in total: a mask for a gate electrode, a semiconductor layer, a mask for a source electrode and a drain electrode, and a mask for etching a protective layer. Therefore, two masks are used compared to the conventional manufacturing method that required five or six masks, and as a result, the manufacturing process can be greatly simplified and the manufacturing cost can be greatly reduced.

Further, in the VA mode liquid crystal display device according to the present invention, the protrusion 115 is formed in the pixel region of the first substrate 101 with the same material as the protective layer 113, and the protrusion 115 is the pixel electrode 117. The electric field E formed between the common electrode 127 and the common electrode 127 is distorted, so that the electric field E is symmetric about the protrusion 139.

Accordingly, the liquid crystal molecules arranged along the electric field are also symmetrically arranged along the protrusion 115, so that two domains having different alignment directions of the liquid crystal molecules are formed around the protrusion 115.

In the drawing, although one protrusion 115 is formed to form two domains, a plurality of protrusions 115 may be formed on the first substrate 101 to form three or more domains.

6 is a view showing another structure of the VA mode liquid crystal display device according to the present invention.

In the above-described VA mode liquid crystal display device according to the present invention, as shown in FIG. 5H, a protrusion 115 made of a photosensitive organic protective layer or a gate insulating layer / photosensitive organic protective layer is formed on the first substrate 101. The electric field E applied to the liquid crystal layer 131 is distorted.

On the other hand, in the VA mode liquid crystal display device having the structure shown in FIG. 6, the projection 110 including the photosensitive organic protective layer 113b or the gate insulating layer and the photosensitive organic protective layers 105 and 113b is formed on the first substrate 101. ) And slits 141a and 141b from which a part of the common electrode 127 is removed are formed on the second substrate 121.

Like the projections 110, the slits 141a and 141b are used to distort the electric field in the pixel region to improve viewing angle characteristics. The slits 141a and 141b are formed by etching the photoelectrode after forming the common electrode 127.

Therefore, in the VA mode liquid crystal display device having this structure, one more slit forming mask is required, which results in a 5-mask or 4-mask process.

In addition, the protrusions 110 and the slits 141a and 141b respectively divide the pixel regions into a plurality of domains, and are not formed at positions facing each other. In FIG. 6, it can be seen that four domains are formed by one protrusion 110 and two slits 141a and 141b. The number of the protrusions 110 and the slits 141a and 141b is not limited, but may be formed in at least one pixel area in each pixel area to form the required number of domains in the pixel.

As described above, the VA mode liquid crystal display device according to the present invention has the following effects.

According to the liquid crystal display device of the vertical alignment mode of the present invention, by using a photosensitive organic material layer such as photoacryl instead of the protective layer, it is possible to replace the existing protective layer and the pixel electrode forming mask without a separate photosensitive film. It is possible to manufacture the liquid crystal display device of the vertical alignment mode used.

Therefore, the number of mask processes can be reduced compared to the existing 5 mask or 6 mask process, simplifying the manufacturing process and greatly reducing the manufacturing cost.

In addition, a projection for improving the viewing angle characteristic by distorting an electric field applied to the liquid crystal layer may also be formed at the time of forming the organic protective layer on the first substrate, thereby further simplifying the manufacturing process.

Claims (28)

A first substrate and a second substrate divided into a first region and a second region; A driving element formed in the first region of the first substrate; A first protective layer formed on the driving element; At least one second protective layer formed in the second region and distorting an electric field; A first electrode formed in the second region; A second electrode formed on the second substrate to form an electric field between the first electrode and the first electrode; And And a liquid crystal layer formed between the first substrate and the second substrate. The liquid crystal display device of claim 1, wherein a symmetrical electric field is formed between the first electrode and the second electrode with respect to a second protective layer. The liquid crystal display device of claim 1, wherein the first protective layer is an organic protective layer. The method of claim 1, wherein the first protective layer, Inorganic protective layer; And Liquid crystal display device comprising an organic protective layer formed on the inorganic protective layer. The liquid crystal display device according to claim 3 or 4, wherein the organic protective layer is made of a photosensitive material such as Benzo Cyclo Butene (BCB) or photoacrylic. The liquid crystal display device of claim 1, wherein the first protective layer and the second protective layer are made of the same material. The liquid crystal display device of claim 1, wherein the driving device is a thin film transistor. The method of claim 7, wherein the thin film transistor, A gate electrode formed on the first substrate; A first gate insulating layer formed on the gate electrode; A semiconductor layer formed on the gate insulating layer; And And a thin film transistor comprising a source electrode and a drain electrode formed on the semiconductor layer. The liquid crystal display device of claim 8, further comprising a second gate insulating layer formed under the second protective layer. 10. The liquid crystal display device according to claim 9, wherein the first gate insulating layer / second protective layer has a height of 1 to 4 mu m from the pixel electrode. The liquid crystal display of claim 1, wherein the first gate insulating layer extends into a second region. The liquid crystal display of claim 11, wherein a portion of the pixel electrode is formed on the first gate insulating layer. 13. The liquid crystal display device according to claim 12, wherein the second protective layer has a height of 1 to 4 mu m from the pixel electrode. The liquid crystal display device according to claim 8, wherein a part of the drain electrode is exposed from the first protective layer, and a pixel electrode is disposed thereon. The method of claim 1, A black matrix formed on the second substrate; And And a color filter layer formed on the second substrate. Providing a first substrate comprising a first region and a second region; Forming a driving element in the first region; Forming a photosensitive organic protective layer over the entire first substrate; Stacking the organic protective layer and exposing and developing the organic protective layer to form a first organic protective layer pattern and a second organic protective layer pattern in a first region and a second region, respectively; And And forming a pixel electrode in the second region by stacking a transparent conductive material over the entire first substrate. The method of claim 16, wherein the photosensitive organic protective layer is a photosensitive material such as BCB (Benzo Cyclo Butene) or photoacryl. The method of claim 16, wherein the forming of the driving device comprises forming a thin film transistor. The method of claim 18, wherein the forming of the thin film transistor comprises: Forming a gate electrode on the first substrate; Forming a gate insulating layer on the first substrate; Forming a semiconductor layer on the gate insulating layer; And And forming a source electrode and a drain electrode on the semiconductor layer. The method of claim 18, wherein the forming of the thin film transistor comprises: Forming a gate electrode on the first substrate; Forming a gate insulating layer on the first substrate; Stacking a semiconductor and a metal layer on the gate insulating layer; Stacking a photoresist on the metal layer and forming a photoresist pattern using a diffraction mask; Etching the semiconductor and the metal layer using the photoresist pattern; Acing the photoresist pattern to remove a photoresist pattern of a partial region; And Forming a semiconductor layer, a source electrode, and a drain electrode by etching the metal layer using the ace-sensitive photoresist pattern. 21. The method of claim 20, further comprising forming a photosensitive organic protective layer on the entire substrate after the forming of the semiconductor layer, the source electrode and the drain electrode. 22. The method of claim 21, wherein a part of the drain electrode exposed after the photosensitive organic protective layer is patterned is removed. The method of claim 20, wherein the transparent conductive layer is laminated on the first organic protective layer pattern, the second protective layer pattern, and the first substrate. The method of claim 20, Providing a second substrate; Forming a black matrix and a color filter layer on the second substrate; Forming a common electrode on the color filter layer; Bonding the first substrate and the second substrate to each other; And Forming a liquid crystal layer between the first substrate and the second substrate further comprising the step of forming a liquid crystal display device. A first substrate and a second substrate; A driving element formed on the first substrate; A photosensitive organic protective layer formed on the driving device; A pixel electrode formed on the first substrate; A common electrode formed on the second substrate; And And a protrusion formed on the first substrate and distorting an electric field between the pixel electrode and the common electrode. 27. The liquid crystal display device according to claim 25, wherein a symmetrical electric field is formed between the pixel electrode and the common electrode with respect to the projection. Providing a first substrate and a second substrate; Forming a driving element on the first substrate; Forming a photosensitive organic protective layer over the entire first substrate; Patterning the photosensitive organic protective layer to form protrusions symmetrically forming an organic protective layer pattern and an electric field; Forming a pixel electrode on the first substrate; And And forming a common electrode on the second substrate. 28. The method of claim 27, further comprising forming at least one slit in the common electrode.

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