KR20050064465A - 비휘발성 메모리 소자의 제조 방법 - Google Patents
비휘발성 메모리 소자의 제조 방법 Download PDFInfo
- Publication number
- KR20050064465A KR20050064465A KR1020030095832A KR20030095832A KR20050064465A KR 20050064465 A KR20050064465 A KR 20050064465A KR 1020030095832 A KR1020030095832 A KR 1020030095832A KR 20030095832 A KR20030095832 A KR 20030095832A KR 20050064465 A KR20050064465 A KR 20050064465A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- film
- nitride film
- nitride
- etching process
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 38
- 230000000903 blocking effect Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000001039 wet etching Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000000206 photolithography Methods 0.000 claims abstract description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (2)
- 소정의 하부 구조가 형성된 반도체 기판에 터널 산화막을 성장시키는 단계와;상기 터널 산화막 상에 플로팅 게이트 폴리 및 ONO 유전체막을 차례로 형성한 후 사진 및 식각 공정으로 게이트 전극을 형성하는 단계와;상기 게이트 전극을 형성한 결과물 전면에 사이드 IPD 물질로 산화막과 질화막을 증착하는 단계와;상기 질화막 상에 블로킹 산화막을 증착하는 단계와;상기 블로킹 산화막에 대한 에치백 공정으로 상기 질화막 측벽에만 블로킹 산화막이 남도록 하는 단계와;상기 질화막에 대해 습식 식각 공정을 진행하는 단계와;상기 블로킹 산화막을 제거하는 단계를 포함하는 것을 특징으로 하는 비휘발성 메모리 소자의 제조 방법.
- 제 1항에 있어서, 상기 습식 식각 공정은 인산 딥 공정인 것을 특징으로 하는 비휘발성 메모리 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030095832A KR100998959B1 (ko) | 2003-12-23 | 2003-12-23 | 비휘발성 메모리 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030095832A KR100998959B1 (ko) | 2003-12-23 | 2003-12-23 | 비휘발성 메모리 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050064465A true KR20050064465A (ko) | 2005-06-29 |
KR100998959B1 KR100998959B1 (ko) | 2010-12-09 |
Family
ID=37256058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030095832A KR100998959B1 (ko) | 2003-12-23 | 2003-12-23 | 비휘발성 메모리 소자의 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100998959B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190115858A (ko) * | 2018-04-04 | 2019-10-14 | (주)정인하이테크 | 하이브리드 공기조화 시스템 |
-
2003
- 2003-12-23 KR KR1020030095832A patent/KR100998959B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190115858A (ko) * | 2018-04-04 | 2019-10-14 | (주)정인하이테크 | 하이브리드 공기조화 시스템 |
Also Published As
Publication number | Publication date |
---|---|
KR100998959B1 (ko) | 2010-12-09 |
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