KR20050013190A - 혼합 신호 ｒｆ 애플리케이션들 및 회로들에 대한 집적회로 구조 - Google Patents

혼합 신호 ｒｆ 애플리케이션들 및 회로들에 대한 집적회로 구조

Info

Publication number
KR20050013190A
KR20050013190A KR10-2004-7002733A KR20047002733A KR20050013190A KR 20050013190 A KR20050013190 A KR 20050013190A KR 20047002733 A KR20047002733 A KR 20047002733A KR 20050013190 A KR20050013190 A KR 20050013190A
Authority
KR
South Korea
Prior art keywords
buried layer
substrate
circuit
digital
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2004-7002733A
Other languages
English (en)
Korean (ko)
Inventor
후앙웬-링엠.
키르츠게스너제임스
몽크데이비드
Original Assignee
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모토로라 인코포레이티드 filed Critical 모토로라 인코포레이티드
Publication of KR20050013190A publication Critical patent/KR20050013190A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR10-2004-7002733A 2002-06-24 2003-05-21 혼합 신호 ｒｆ 애플리케이션들 및 회로들에 대한 집적회로 구조 Withdrawn KR20050013190A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/178,672 US20030234438A1 (en) 2002-06-24 2002-06-24 Integrated circuit structure for mixed-signal RF applications and circuits
US10/178,672 2002-06-24
PCT/US2003/016286 WO2004001850A1 (en) 2002-06-24 2003-05-21 Integrated circuit structure for mixed-signal rf applications and circuits

Publications (1)

Publication Number Publication Date
KR20050013190A true KR20050013190A (ko) 2005-02-03

Family

ID=29734747

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7002733A Withdrawn KR20050013190A (ko) 2002-06-24 2003-05-21 혼합 신호 ｒｆ 애플리케이션들 및 회로들에 대한 집적회로 구조

Country Status (7)

Country Link
US (1) US20030234438A1 (https=)
EP (1) EP1518276A1 (https=)
JP (1) JP2005531143A (https=)
KR (1) KR20050013190A (https=)
CN (1) CN1547775A (https=)
AU (1) AU2003248560A1 (https=)
WO (1) WO2004001850A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854440B1 (ko) * 2006-04-26 2008-08-26 매그나칩 반도체 유한회사 반도체 집적회로
US7884440B2 (en) 2006-04-26 2011-02-08 Magnachip Semiconductor, Ltd. Semiconductor integrated circuit
US8154083B2 (en) 2007-07-13 2012-04-10 Petari Incorporation Semiconductor device formed on high-resistance substrate

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4742543B2 (ja) * 2004-09-08 2011-08-10 凸版印刷株式会社 Ｄｎａチップ装置
US7375000B2 (en) * 2005-08-22 2008-05-20 International Business Machines Corporation Discrete on-chip SOI resistors
US8129817B2 (en) * 2008-12-31 2012-03-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing high-frequency signal loss in substrates
CN102055414A (zh) * 2010-04-14 2011-05-11 锐迪科创微电子（北京）有限公司 射频功率放大器模块及移动通信终端
US8679863B2 (en) 2012-03-15 2014-03-25 International Business Machines Corporation Fine tuning highly resistive substrate resistivity and structures thereof
CN108538834B (zh) * 2012-06-28 2022-10-11 天工方案公司 高电阻率基底上的双极型晶体管
JP6076068B2 (ja) * 2012-12-17 2017-02-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置
CN104051529B (zh) * 2013-03-13 2017-07-28 台湾积体电路制造股份有限公司 高阻抗衬底上的rf开关

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218224A (en) * 1989-06-14 1993-06-08 Kabushiki Kaisha Toshiba Semiconductor device including inversion preventing layers having a plurality of impurity concentration peaks in direction of depth
JPH03222467A (ja) * 1990-01-29 1991-10-01 Mitsubishi Electric Corp 半導体集積回路装置
US5994755A (en) * 1991-10-30 1999-11-30 Intersil Corporation Analog-to-digital converter and method of fabrication
JP3217560B2 (ja) * 1993-11-15 2001-10-09 株式会社東芝 半導体装置
US5623159A (en) * 1994-10-03 1997-04-22 Motorola, Inc. Integrated circuit isolation structure for suppressing high-frequency cross-talk
US5559349A (en) * 1995-03-07 1996-09-24 Northrop Grumman Corporation Silicon integrated circuit with passive devices over high resistivity silicon substrate portion, and active devices formed in lower resistivity silicon layer over the substrate
US5880515A (en) * 1996-09-30 1999-03-09 Lsi Logic Corporation Circuit isolation utilizing MeV implantation
JPH10199993A (ja) * 1997-01-07 1998-07-31 Mitsubishi Electric Corp 半導体回路装置及びその製造方法、半導体回路装置製造用マスク装置
US6407441B1 (en) * 1997-12-29 2002-06-18 Texas Instruments Incorporated Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applications
US6388290B1 (en) * 1998-06-10 2002-05-14 Agere Systems Guardian Corp. Single crystal silicon on polycrystalline silicon integrated circuits
US6166415A (en) * 1998-11-02 2000-12-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with improved noise resistivity
US6424022B1 (en) * 2000-03-12 2002-07-23 Mobilink Telecom, Inc. Guard mesh for noise isolation in highly integrated circuits
US7575969B2 (en) * 2000-03-02 2009-08-18 Texas Instruments Incorporated Buried layer and method
US20020125537A1 (en) * 2000-05-30 2002-09-12 Ting-Wah Wong Integrated radio frequency circuits
US6441442B1 (en) * 2000-05-30 2002-08-27 Programmable Silicon Solutions Integrated inductive circuits
US6525394B1 (en) * 2000-08-03 2003-02-25 Ray E. Kuhn Substrate isolation for analog/digital IC chips
JP2002198490A (ja) * 2000-12-26 2002-07-12 Toshiba Corp 半導体装置
US6909150B2 (en) * 2001-07-23 2005-06-21 Agere Systems Inc. Mixed signal integrated circuit with improved isolation
US6563181B1 (en) * 2001-11-02 2003-05-13 Motorola, Inc. High frequency signal isolation in a semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854440B1 (ko) * 2006-04-26 2008-08-26 매그나칩 반도체 유한회사 반도체 집적회로
US7884440B2 (en) 2006-04-26 2011-02-08 Magnachip Semiconductor, Ltd. Semiconductor integrated circuit
US8154083B2 (en) 2007-07-13 2012-04-10 Petari Incorporation Semiconductor device formed on high-resistance substrate

Also Published As

Publication number Publication date
CN1547775A (zh) 2004-11-17
EP1518276A1 (en) 2005-03-30
AU2003248560A1 (en) 2004-01-06
JP2005531143A (ja) 2005-10-13
US20030234438A1 (en) 2003-12-25
WO2004001850A1 (en) 2003-12-31

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