KR20050010928A - Image display device, image display device manufacturing method, and manufacturing device - Google Patents

Abstract

The envelope of the image display device is the front substrate 11 and the rear surface disposed to face the front substrate.

The peripheral part of a front substrate and a back substrate is mutually sealed by the sealing layer 21 which has the board | substrate 12 and contains a conductive sealing material. The envelope 30 is equipped with an electrode 30 for energizing the sealing layer. The electrode is formed of a conductive member and has a conductive portion 38 which is electrically contacted with the sealing layer and exposed to the outside.

Description

IMAGE DISPLAY DEVICE, IMAGE DISPLAY DEVICE MANUFACTURING METHOD, AND MANUFACTURING DEVICE}

In recent years, various image display apparatuses, which are next-generation lightweight and thin display apparatuses, which replace cathode ray tubes (hereinafter referred to as CRTs), have been developed. Such an image display device includes a liquid crystal display (hereinafter referred to as LCD) that controls the intensity of light by using liquid crystal orientation, a plasma display panel (hereinafter referred to as PDP) that emits phosphors through ultraviolet rays of plasma discharge, and field emission Field emission display for emitting phosphor through an electron beam of a type electron emitting element (hereinafter referred to as FED), surface conduction electron emitting display for emitting phosphor through an electron beam of a surface conduction electron emitting element (hereinafter referred to as SED) And the like).

For example, FEDs or SEDs generally have a front substrate and a back substrate that are disposed to face each other at predetermined intervals, which are joined to each other through a rectangular frame-shaped side wall to form an external device of vacuum. Configure. A phosphor screen is formed on the inner surface of the front substrate, and a plurality of electron emission elements are provided on the inner surface of the rear substrate, which are electron emission sources for exciting and emitting phosphors.

In order to support the atmospheric load applied to the back substrate and the front substrate, a plurality of support members are provided between these substrates. The potential on the rear substrate side is almost an earth potential, and the anode voltage Va is applied to the fluorescent surface. Then, the red, green, and blue phosphors constituting the phosphor screen are irradiated with an electron beam emitted from the emitter to emit an phosphor to display an image.

Such FEDs and SEDs can be configured to have a thickness of the display device as thin as a few mm, and thus can be lighter and thinner than CRTs used in current televisions and computer displays.

FED or SED as described above needs to maintain the inside of the envelope in a high vacuum. Also in the PDP, it is necessary to charge the discharge gas after vacuuming the inside of the envelope once. A method for manufacturing a FED having a vacuum envelope, for example, Japanese Patent Application Laid-Open No. 2000-229825 and Japanese Patent Laid-Open No. 2001-210258 discloses a method of performing final assembly of a front substrate and a back substrate in a vacuum chamber. Is disclosed.

In this method, first, the front substrate and the back substrate sent into the vacuum chamber are sufficiently heated. This is to alleviate the gas emission from the inner wall of the envelope, which is a major factor in deteriorating the vacuum degree of the envelope. Next, when the front substrate and the back substrate are cooled and the vacuum degree in the vacuum chamber is sufficiently improved, a getter film for improving and maintaining the vacuum degree of the envelope is formed on the fluorescent screen. Thereafter, the front substrate and the back substrate are heated again to the temperature at which the sealing material is dissolved, and cooled until the sealing material is solidified in the state in which the front substrate and the back substrate are assembled at a predetermined position.

The vacuum envelope manufactured in this way serves as a sealing step and a vacuum encapsulation step, and a lot of time is not required for exhaust, and an extremely good degree of vacuum can be obtained. In addition, as a sealing material, it is preferable to use the low melting-point material suitable for sealing and sealing batch processing.

However, in the case of performing the assembly in a vacuum in this way, the processing performed in the sealing process is spread over many aspects, such as heating, positioning, cooling, and also the front substrate and the back substrate for a long time that the sealing material is dissolved and solidified. It must be kept in a predetermined position In addition, there is a problem in terms of productivity and characteristics due to sealing, such as thermal expansion of the front substrate and the rear substrate and deterioration of positioning accuracy due to heat and cooling at the time of sealing.

As a method for solving this problem, a method of energizing conductive sealing materials such as indium and heating and dissolving the conductive sealing material itself through the joule heat to bond the substrates (hereinafter referred to as energizing heating) has been studied. According to this method, it is possible to vacuum enclose the envelope with a short time and a simple device without having to spend much time for cooling the substrate. In other words, when the conductive sealing material is used, only a sealing material having a small heat capacity can be selectively heated without heating the substrate, so that degradation of positional accuracy due to thermal expansion of the substrate can be suppressed. In addition, since the heat capacity of the sealing material is very small compared to the heat capacity of the substrate, the time required for heating and cooling can be significantly shortened compared to the method of heating the entire surface of the substrate, so that the mass productivity can be significantly improved.

However, in the case of energizing and heating, it is necessary to flow a stable current to the conductive sealing material. When the current value is not stabilized, the time required for dissolving the conductive sealing material is different depending on each of the envelopes, so that stable substrate bonding cannot be performed. If the conductive sealing material is excessively heated, the heat will cause cracks in the substrate. On the contrary, when it does not melt | dissolve sufficiently, the board | substrate connection is inadequate and the problem of not being able to maintain the vacuum of an external atmosphere in a subsequent exhaust process arises.

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a planar image display device having an opposingly disposed substrate, a manufacturing method of an image display device, and a manufacturing device of an image display device.

1 is a perspective view showing an entire FED according to a first embodiment of the present invention.

Figure 2 is a perspective view showing the internal configuration of the FED.

3 is a cross-sectional view taken along line III-III of FIG. 1;

4 is an enlarged plan view of a portion of the phosphor screen of the FED;

5 is a perspective view showing an electrode of the FED.

6A and 6B are plan views each showing a front substrate and a back substrate used in the manufacture of the FED.

Fig. 7 is a perspective view showing a state in which electrodes are mounted on the back substrate of the FED.

Fig. 8 is a cross-sectional view showing a state where the rear substrate and the front substrate on which indium is disposed on the sealing portion face each other.

FIG. 9 schematically shows a vacuum processing apparatus used for producing the FED; FIG.

Fig. 10 is a plan view schematically showing a state in which a power source is connected to an electrode of a FED in the manufacturing process of the FED.

Fig. 11 is a perspective view showing a part of the FED according to the second embodiment of the present invention.

12A and 12B are sectional views showing the manufacturing process of the FED according to the second embodiment.

Fig. 13 is a plan view schematically showing a state in which a power source is connected to an electrode of a FED in the manufacturing process of the FED according to the third embodiment of the present invention.

14A and 14B are sectional views showing the manufacturing process of the FED according to the third embodiment.

Fig. 15 is a perspective view showing the whole of the FED according to the fourth embodiment of the present invention.

FIG. 16 is a cross sectional view along line XVI-XVI in FIG. 15; FIG.

Fig. 17 is a perspective view showing an electrode of the FED.

18A and 18B are plan views each showing a front substrate and a back substrate used for manufacturing the FED.

Fig. 19 is a cross-sectional view showing a state where the rear substrate and the front substrate on which indium is disposed are disposed to face each other.

20 is a cross-sectional view showing a modification of the electrode in the fourth embodiment;

Fig. 21 is a perspective view showing another modification of the electrode in the fourth embodiment.

Fig. 22 is a sectional view showing the other modification example in the fourth embodiment.

Fig. 23 is a perspective view showing the whole of the FED according to the fifth embodiment of the present invention.

FIG. 24 is a sectional view along line XXIV-XXIV in FIG. 23; FIG.

Fig. 25 is a perspective view showing an electrode of the FED according to the fifth embodiment.

Fig. 26 is a sectional view of an electrode according to a modification in the fifth embodiment.

Fig. 27 is a perspective view of an electrode according to another modification of the fifth embodiment.

Fig. 28 is a sectional view of an electrode according to another modification of the fifth embodiment.

FIG. 29 is a perspective view of an electrode according to still another modification of the fifth embodiment; FIG.

30 is a perspective view showing an FED according to a sixth embodiment of the present invention.

Fig. 31A is a plan view showing a front substrate used for producing the FED.

Fig. 31B is a plan view showing the back substrate, side walls, and spacers used for manufacturing the FED.

32 is a cross-sectional view showing a sealing step between a front substrate and a side wall in the manufacturing method according to the sixth embodiment;

33 is a plan view showing a modification of the electrode in the sixth embodiment;

34A and 34B are plan views each showing another modified example of the electrode in the sixth embodiment;

Fig. 35 is a sectional view showing the manufacturing method of the FED according to the seventh embodiment of the present invention.

Fig. 36 is a sectional view showing a sealing step using an electrode according to the seventh embodiment of the present invention.

Fig. 37 is a sectional view showing the manufacturing method of the FED according to the eighth embodiment of the present invention.

Fig. 38 is a cross-sectional view showing a state where electrodes are inserted between substrates in the eighth embodiment.

Fig. 39 is a cross-sectional view showing a state in which the two substrates are pressed in a direction in which the two substrates are close to each other in the eighth embodiment.

40 is a cross-sectional view showing a method for manufacturing a FED according to the ninth embodiment of the present invention.

Fig. 41 is a sectional view showing a state in which an electrode is brought into contact with a welding portion of a sealing layer in the ninth embodiment.

Fig. 42 is a perspective view showing the whole of the FED according to the tenth embodiment of the present invention.

Figure 43 is a cross sectional view along line XLIII-XLIII in Figure 42;

44 is a perspective view showing an electrode of an FED according to a tenth embodiment;

45 is a perspective view showing a state in which an electrode is attached to a rear substrate in the tenth embodiment;

FIG. 46 is a cross-sectional view showing a state in which a rear substrate and a front substrate on which a sealing layer is disposed face each other in a tenth embodiment;

FIG. 47 is a cross-sectional view showing a state in which a contact portion of an electrode is sandwiched between a sealing layer by pressing the back substrate and the front substrate in a direction to approach each other in the tenth embodiment;

48 is a perspective view showing an electrode according to a modification in the tenth embodiment;

49 is a perspective view showing an electrode according to another modification in the tenth embodiment;

50 is a perspective view of an electrode according to still another modification in the tenth embodiment;

Fig. 51 is a sectional view of an electrode according to another modification of the tenth embodiment;

Fig. 52 is a cross-sectional view showing a state in which a rear substrate on which indium is disposed and a front substrate are disposed to face each other in the modification of the tenth embodiment.

Fig. 53 is a cross sectional view showing a state in which a rear substrate on which indium is disposed and a front substrate are disposed opposite each other in the modification of the tenth embodiment.

Fig. 54 is a perspective view of an electrode according to a modification in the tenth embodiment.

Fig. 55 is a sectional view showing a step of removing an electrode in the eleventh embodiment of the present invention.

Fig. 56 is a sectional view showing a step of removing an electrode in the eleventh embodiment.

Fig. 57 is a perspective view of the FED in which the electrode is removed in the eleventh embodiment.

Fig. 58 is a sectional view showing an FED from which an electrode has been removed in the eleventh embodiment;

59 is a cross-sectional view showing a step of removing an electrode in the modification of the eleventh embodiment.

60 is a cross-sectional view showing a step of removing an electrode in another modification of the eleventh embodiment.

61A to 61E are plan views each showing a modified example of the recess formed in the sealing layer of the FED in the eleventh embodiment.

Fig. 62 is a sectional view showing a step of cutting an electrode in the twelfth embodiment of the present invention.

Fig. 63 is a sectional view showing a step of removing the cut electrode in the twelfth embodiment.

64 is a cross-sectional view showing an FED according to a thirteenth embodiment of the present invention;

Fig. 65 is a perspective view showing a state in which an electrode is attached to a rear substrate in the thirteenth embodiment.

Fig. 66 is a sectional view showing the production apparatus according to the thirteenth embodiment.

Fig. 67 is a perspective view schematically showing the manufacturing apparatus.

68 is a cross-sectional view of a manufacturing apparatus according to a modification in the thirteenth embodiment;

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object thereof is to provide an image display apparatus, a manufacturing method and a manufacturing apparatus of the image display apparatus which can perform the sealing operation quickly and stably.

In order to achieve the above object, an image display apparatus according to an aspect of the present invention has a front substrate and a back substrate disposed opposite to the front substrate, and the front substrate and the back substrate are formed through a sealing layer containing a conductive sealing material. And an enclosure for sealing the periphery of each other, and an electrode for mounting the enclosure in electrical contact with the encapsulation layer and for energizing the encapsulation layer.

The manufacturing method of the image display apparatus which concerns on another aspect of this invention is a manufacturing method of the image display apparatus provided with the enclosure which has the front substrate and the back substrate which are mutually arrange | positioned and the peripheral part joined together,

A conductive sealing material is disposed on at least one periphery of the front substrate and the rear substrate to form a sealing layer, and an electrode is mounted on the at least one side of the front substrate and the back substrate on which the sealing layer is formed, and the sealing layer is electrically The front substrate and the back substrate are connected to each other, and the sealing layer is energized through the electrode to heat the sealing layer through the electrode to bond the peripheral portions of the front substrate and the back substrate to each other.

According to the image display apparatus and the manufacturing method which were comprised as mentioned above, the electrode is equipped with the electrode previously attached to an enclosure, and is electrically connected with a sealing layer, The electrically conductive layer is heated through this electrode, and an envelope is comprised. Therefore, since a stable electric current can be supplied to the sealing layer formed of the conductive sealing material, the sealing operation of the image display device can be stabilized quickly and quickly.

EMBODIMENT OF THE INVENTION Hereinafter, with reference to drawings, the FED and its manufacturing method which concern on 1st Embodiment of this invention are demonstrated in detail.

As shown in Figs. 1 to 4, the FED includes a front substrate 11 and a back substrate 12 each formed of rectangular glass plates, which are disposed to face each other at intervals of 1 to 2 mm. The front substrate 11 and the rear substrate 12 constitute a flat rectangular vacuum envelope 10 in which peripheral edges are joined to each other through a rectangular frame-shaped side wall 18 and the inside thereof is maintained in a vacuum.

The inside of the vacuum envelope 10 is provided with a plurality of plate-shaped support members 14 for supporting atmospheric loads applied to the front substrate 11 and the rear substrate 12. These support members 14 are each extended in the direction parallel to one side of the vacuum envelope 10, and are arranged at predetermined intervals along the direction orthogonal to the one side. The support member 14 is not limited to a plate shape and may use a columnar shape.

On the inner surface of the front substrate 11, a phosphor screen 16 that functions as an image display surface is formed. The phosphor screen 16 is configured by arranging phosphor layers (R, G, B) of red, green, and blue and light absorbing layers 20 located between these phosphors. The phosphor layers R, G, and B extend in a direction parallel to the upper one side of the vacuum envelope 10, and are arranged at predetermined intervals along the direction orthogonal to this one side. The light absorbing layer 20 is provided around the phosphor layers R, G, and B. As shown in FIG. On the phosphor screen 16, for example, a metal back 17 made of aluminum and a getter film 13 are sequentially deposited.

As shown in Fig. 3, on the inner surface of the back substrate 12, a plurality of electron emission elements 22 which emit electron beams are provided as electron emission sources for exciting the phosphor layer of the phosphor screen 16, respectively. These electron emission elements 22 are arranged in a plurality of columns and a plurality of rows so as to correspond to the pixels. In detail, the conductive cathode layer 24 is formed on the inner surface of the back substrate 12, and the silicon dioxide film 26 having a plurality of cavities 25 is formed on the conductive cathode layer. On the silicon dioxide film 26, a gate electrode 28 made of molybdenum, niobium, or the like is formed. In each cavity 25 on the inner surface of the back substrate 12, a cone-shaped electron emission element 22 made of molybdenum or the like is formed.

In the FED of the above configuration, the image signal is input to the electron emission element 22 and the gate electrode 28 formed in a simple matrix manner. In the case of using the electron emission element 22 as a reference, a gate voltage of +100 V is applied when the state of the highest luminance is applied. In addition, +10 kV is applied to the phosphor screen 16. As a result, the electron beam is emitted from the electron emission element 22. The size of the electron beam emitted from the electron emission element 22 is modulated according to the voltage of the gate electrode 28, and the electron beam excites the phosphor layer of the phosphor screen 16 to emit light to display an image.

Since a high voltage is applied to the phosphor screen 16, high distortion glass is used as the plate glass for the front substrate 11, the back substrate 12, the side wall 18, and the support member 14. As will be described later, a low melting glass 19 such as flat glass is sealed between the back substrate 12 and the side wall 18. Between the front substrate 11 and the side wall 18, it is sealed by the sealing layer 21 containing indium (In) which is an electroconductive low melting point sealing material.

The FED includes a plurality of, for example, a pair of electrodes 30, which are mounted to the enclosure 10 in a state of being electrically conductive to the sealing layer 21. These electrodes 30 are used as electrode members when conducting to the sealing layer 21.

As shown in Fig. 5, each electrode 30 is formed as a conductive member, for example, by processing a 0.2 mm thick copper plate to form a clip. That is, the electrode 30 is bent so that the cross section is substantially U-shaped, the first flat plate portion 33a, the second plate portion 33b facing the first plate portion at intervals, and the first and second plate portions. It has a conducting portion 38 extending substantially perpendicular to and connecting the edges of the first and second plate portions. The first plate portion 33a has first and second contact portions 36a and 36b that are in electrical communication with the sealing layer 21, respectively. A slit 45 is formed between the first and second contact portions 36a and 36b, and the second contact portion 36b is formed in the shape of a nail and easily elastically deformable.

As shown in FIGS. 1 to 3, each electrode 30 is mounted to the vacuum envelope 10 in a state that is elastically coupled to the back substrate 12 and the sidewall 18, for example. That is, the electrode 30 is the vacuum envelope 10 in a state in which the edge and the side wall 18 of the rear substrate 12 are elastically sandwiched between the first plate portion 33a and the second plate portion 33b. Is fixed to. The first and second contact portions 36a and 36b of the first plate portion 33a are in electrical contact with the sealing layer 21, respectively. In addition, the conductive portion 38 of the electrode 30 faces the side and side walls 18 of the back substrate 12 and is exposed to the outside of the vacuum envelope 10. These pairs of electrodes 30 are provided at two corner portions separated from each other in the diagonal direction of the vacuum envelope 10, and are arranged symmetrically with respect to the sealing layer 21.

Next, the manufacturing method of the FED which has the said structure is demonstrated in detail.

First, the fluorescent substance screen 16 is formed in the plate glass which comprises the front substrate 11. As shown in FIG. In this case, plate glass of the same size as the front substrate 11 is prepared, and a phosphor stripe pattern is formed on the plate glass by a plotter machine. The plate glass in which this phosphor stripe pattern was formed, and the plate glass for front substrates are mounted on a positioning jig, and are set to an exposure stand. When the phosphor stripe pattern is exposed and shaped in this state, a phosphor screen is formed on the glass plate constituting the front substrate 11. Thereafter, the metal back 17 is formed on the phosphor screen 16.

Next, the electron emission element 22 is produced on the plate glass for the back substrate 12. This forms a matrix conductive cathode layer 24 on the plate glass, and forms an insulating film of a silicon dioxide film on the cathode layer, for example, by thermal oxidation, CVD, or sputtering. Thereafter, a metal film for forming a gate electrode such as molybdenum or niobium is formed on the insulating film by, for example, sputtering or electron beam deposition. Next, a resist pattern having a shape corresponding to the gate electrode to be formed on this metal film is formed through lithography. The gate electrode 28 is formed by etching a metal film through a wet etching method or a dry etching method using a resist pattern as a mask.

Thereafter, the insulating film is etched by wet etching or bridge etching using the resist pattern and the gate electrode 28 as a mask to form the cavity 25. After removing the resist pattern, electron beam deposition is performed on the surface of the rear substrate 12 in a direction inclined at a predetermined angle to form a release layer made of, for example, aluminum or nickel on the gate electrode 28. Thereafter, a cathode forming material, such as molybdenum, is deposited on the surface of the back substrate in the vertical direction by electron beam deposition. Accordingly, the electron emission element 22 is formed inside the cavity 25. Next, the release layer is removed through the lift-off method together with the metal film formed thereon. Then, the side wall 18 and the support member 14 are sealed through the low melting glass 19 on the inner surface of the back substrate 12 in the air.

Thereafter, as shown in Figs. 6A and 6B, indium is applied in a predetermined width and thickness over the entire circumference of the sealing surface of the side wall 18 to form the sealing layer 21a. Similarly, indium is applied to the sealing surface facing the sidewall of the front substrate 11 in a rectangular frame shape at a predetermined width and thickness to form the sealing layer 21b. The filling of the sealing layers 21a and 21b to the sealing surface of the side wall 18 and the front substrate 11 is performed by applying molten indium to the sealing surface as described above, or placing indium in a solid state on the sealing surface. How to do it.

Next, as shown in FIG. 7, a pair of electrodes 30 are mounted on the back substrate 12 to which the side walls 18 are bonded. At this time, when the 1st contact part 36a of each electrode 30 contacts the sealing layer 21a on the side wall 18, an electrode is electrically connected to the sealing layer. Moreover, in order to ensure the electroconductivity of the 1st contact part 36a and a sealing layer reliably, it is also effective to solder between the sealing layer 21a and the 1st contact part 36a previously. The electrode 30 requires a pair of + and-poles on the substrate, but it is preferable to equalize the length of current passing from each electrode to the sealing layers 21a and 21b. Thus, a pair of electrodes 30 are mounted on two corner portions facing the back substrate 12 in the diagonal direction, and the lengths of the sealing layers 21a and 21b positioned between the electrodes are almost equal at both sides of each electrode. Is set to.

After mounting the electrode 30, the rear substrate 12 and the front substrate 11 are disposed to face each other at a predetermined interval, and are introduced into the vacuum processing apparatus in this state. Here, for example, the vacuum processing apparatus 100 shown in FIG. 9 is used. The vacuum processing apparatus 100 includes a load chamber 101, a baking chamber, an electron beam cleaning chamber 102, a cooling chamber 103, a getter film deposition chamber 104, an assembly chamber 105, and a cooling chamber 106 arranged side by side. And an unloading chamber 107. The assembling chamber 105 is connected with a direct current power supply 120 for electricity and a computer 122 for controlling the power supply. Each chamber of the vacuum processing apparatus 100 is comprised by the process chamber which can be vacuum-processed, and the whole process chamber is evacuated at the time of manufacture of a FED. Each of these process chambers is connected by the gate valve etc. which are not shown in figure.

The front substrate 11 and the rear substrate 12, which are spaced apart by a predetermined interval, are first introduced into the load chamber 101, and the inside of the load chamber 101 is vacuumed, followed by baking and electron beam cleaning chamber 102. Is sent to.

In the baking and electron beam cleaning chamber 102, each member is heated to the temperature of 300 degreeC, and the surface adsorption gas of each board | substrate and a side wall is discharge | released. At the same time, electron beams from an electron beam generator (not shown) provided in the baking and electron beam cleaning chamber 102 are irradiated to the phosphor screen surface of the front substrate 11 and the electron emission element surface of the back substrate 12. At this time, an electron beam is deflected by a deflection apparatus mounted outside the electron beam generating apparatus, and the front surface of the phosphor screen surface and the electron emitting element surface are respectively cleaned by electron beam.

The front substrate 11 and the rear substrate 12 subjected to the heating and electron beam cleaning in this manner are sent to the cooling chamber 103 and cooled to a temperature of about 120 ° C., and then to the getter film deposition chamber 104. . In the deposition chamber 104, a Ba film, which is a getter film, is deposited on the outer side of the phosphor layer. The Ba film can be prevented from being contaminated with oxygen, carbon, or the like to maintain an active state.

Next, the front substrate 11 and the rear substrate 12 are sent to the assembly chamber 105. In this assembly chamber 105, as shown in FIG. 8, the front contact 11 and the back contact 12 are moved in a direction close to each other while keeping the front substrate 11 at about 120 DEG C so that the second contact portion of each electrode 20 is located. 36b is brought into contact with the sealing layer 21b on the front substrate 11 side. As a result, each electrode 30 is electrically connected to the sealing layer 21b. At this time, as the second contact portion 36b is elastically pressed to the sealing layer 21b by the spring pressure, it is possible to secure stable conductivity.

Next, as shown in FIG. 10, after the power supply 120 is electrically connected to the pair of electrodes 30, the sealing layer 21a on the sidewall 18 side and the sealing layer on the front substrate 11 side ( 21b) is energized and the sealing layer is heated to melt indium. At this time, when the connection terminal 40 connected to the power supply 120 is brought into contact with the conducting portion 38 of the electrode 30, the power supply and the electrode and the electrodes and the sealing layers 21a and 21b can be reliably conducted. .

After the indium is melted, the front substrate 11 and the rear substrate 12 are pressed in a direction close to each other. As a result, the sealing layers 21a and 21b are fused together to form the sealing layer 21, and the peripheral portion and the sidewall 18 of the front substrate 11 are sealed by the sealing layer. The vacuum envelope 10 formed by the above process is cooled to the room temperature in the cooling chamber 106 and taken out from the unload chamber 107. This process completes the vacuum envelope of the FED.

In addition, after the vacuum envelope is completed, the electrode 30 may be removed as necessary.

According to the FED comprised as mentioned above and its manufacturing method, the electrode 30 to be electrically connected to the sealing layer 21 is previously sealed to an outer envelope, and is fixed in the state electrically connected to the sealing layer. Therefore, it is possible to flow a stable current to the sealing layer 21 through the electrode 30 at the time of energizing heating. Accordingly, the conductive low melting point material constituting the sealing layer at the time of sealing can be stably and reliably melted at a predetermined energization time, and as a result, cracks, etc. do not occur in the sealing layer 21, and fast and reliable sealing can be performed. Can be.

Since sealing and bonding of the front substrate and the back substrate are performed in a vacuum atmosphere, the surface adsorption gas can be sufficiently discharged through the combination of baking and electron beam cleaning, so that a getter film excellent in adsorption capacity can be obtained. In addition, since the entire surface of the front substrate and the rear substrate is not required to be heated by sealing and bonding the indium by heating, it is possible to eliminate problems such as deterioration of the getter film and cracking of the substrate during the sealing process. We can plan.

Therefore, a low cost FED can be obtained which is excellent in mass productivity and attains stable and good images.

Next, the FED according to the second embodiment of the present invention will be described. In the above-described embodiment, each electrode has a first contact portion connected to the encapsulation layer on the side wall side and a second contact portion conducting to the encapsulation layer on the front substrate side, but according to the second embodiment, FIGS. As shown in Fig. 12B, the electrode 30 has a single contact portion 36a. A pair of electrodes 30 are respectively mounted on a pair of corner portions facing the back substrate 12 in the diagonal direction, and the side wall 18 and the back substrate 12 are elastically sandwiched in the envelope. It is installed. At this time, each contact portion 36a is in contact with the upper surface of the sealing layer 21a and is electrically connected to the sealing layer.

In the sealing step, when the front substrate 11 on which the sealing layer 21b is formed is disposed to face the rear substrate 12, the contact portion 36a of each electrode 30 is in contact with both of the sealing layers 21a and 21b. Electrically connected. In addition, indium can be heated and melted by conducting simultaneously to the sealing layers 21a and 21b via these electrodes 30.

In 2nd Embodiment, another structure is the same as that of 1st Embodiment mentioned above, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted. And the 2nd Embodiment can also acquire the effect similar to 1st Embodiment. In the first and second embodiments, the electrodes 30 may be mounted and fixed on the front substrate side.

According to the third embodiment shown in Figs. 13, 14A and 14B, the FED includes a pair of first electrodes 30a and a front substrate 11 that are in communication with the sealing layer 21a formed on the sidewall 18. A pair of 2nd electrode 30b connected with the sealing layer 21b formed in (circle) is provided. The first and second electrodes 30a and 30b are formed in a clip like the electrode 30 described above. However, each contact portion 36 is composed of one electrode.

The pair of first electrodes 30a are mounted on a pair of corner portions facing the rear substrate 12 in the diagonal direction, and the sidewalls 18 and the rear substrate 12 are mounted in a state where they are elastically sandwiched. It is. At this time, each of the first electrodes 30a has its contact portion 36 in contact with the sealing portion 21a and is electrically connected to the sealing layer. The pair of second electrodes 30b are mounted on a pair of corner portions facing the front substrate 11 in the diagonal direction, and are mounted in a state in which the front substrate is elastically sandwiched. At this time, each of the second electrodes 30b has a contact portion 36 in contact with the sealing layer 21b and is electrically connected to the sealing layer. The first electrode 30a and the second electrode 30b are preferably arranged in four corner portions without overlapping each other.

In the sealing process, as shown in FIGS. 13 and 14A, a pair of connection terminals 40a connected to the power supply 120 are brought into contact with the conducting portion 38 of the first electrode, respectively, to supply the power supply with the first electrode and the first electrode. The electrode and the sealing layer 21a are made conductive. In addition, the pair of connection terminals 40b connected to the power supply 120 are connected to the conducting portion 38 of the second electrode 30b, respectively, to connect the power supply, the second electrode, the second electrode, and the sealing layer 21b. Turn on. In this state, the sealing layer 21a on the side wall 18 side and the sealing layer 21b on the front substrate 11 side are electrically conducted to heat the sealing layer to melt indium.

After the indium is melted, the front substrate 11 and the back substrate 12 are pressed in a direction close to each other as shown in Fig. 14B. As a result, the sealing layers 21a and 21b are fused together to form the sealing layer 21, and the peripheral portion and the sidewall 18 of the front substrate 11 are sealed by the sealing layer.

In 3rd Embodiment, another structure is the same as that of 1st Embodiment mentioned above, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted. Also in 3rd Embodiment, the effect similar to 1st Embodiment can be acquired. Moreover, according to 3rd Embodiment, since the electric current value supplied to the sealing layer 21a by the side of the back board | substrate 12, and the sealing layer 21b by the front board | substrate 11 side can be controlled individually, more suitable energization heating Can be done.

Next, an FED according to a fourth embodiment of the present invention will be described.

As shown in Figs. 15 to 17, the FED has a vacuum envelope 10 and a plurality of, for example, a pair of electrodes 30 mounted on the vacuum envelope. The vacuum envelope 10 includes a front substrate 11 and a back substrate 12 each formed of a rectangular glass plate, and the substrates 11 and 12 are joined to the periphery through sidewalls 18 of a rectangular frame shape. have. The phosphor screen 16, the metal back 17, and the getter film 13 are formed on the inner surface of the front substrate 11. On the inner surface of the back substrate 12, a plurality of electron emission elements 22 for exciting the phosphor layer of the phosphor screen 16 are provided. In addition, a plurality of wirings 23 for supplying electric potential to the electron emission elements 22 are provided in a matrix on the inner surface of the rear substrate 12, and the ends thereof are drawn out to the periphery of the vacuum envelope 10. .

The pair of electrodes 30 are mounted to the envelope 10 in a state of being electrically connected to the sealing layer 21. These electrodes 30 are used as electrodes when conducting the sealing layer 21 to conduct. Each electrode 30 is formed by bending a conductive member, for example, a copper plate having a thickness of 0.2 mm. That is, the electrode 30 is bent so that the cross-section is almost U-shaped, the clip-shaped mounting portion 32 mounted by sandwiching the periphery of the front substrate 11 or the rear substrate 12, the wedge shape parallel to the mounting portion And a flat conductive portion 38 formed by the body portion 34, the contact portion 36 located at the extended end of the body portion, and the rear portion of the mounting portion and the body portion. The contact portion 36 is formed to have an extension length L in the horizontal direction of 2 mm or more. Further, the body portion 34 is formed in a band shape, and extends outwardly and diagonally upward from the contact portion 36. Thus, the body portion 34 forms an outflow restriction portion 37 located higher than the contact portion 36 in the vertical direction.

Each electrode 30 is mounted in a state in which the vacuum envelope 10 is elastically coupled to, for example, the rear substrate 12. That is, the electrode 30 is attached to the vacuum envelope 30 in a state in which the peripheral portion of the rear substrate 12 is elastically sandwiched through the mounting portion 32. The contact portion 36 of each electrode 30 is in electrical contact with the sealing portion 21, respectively. The body portion 34 extends from the contact portion 36 to the outside of the vacuum envelope 10, while the outflow restriction portion 37 is located higher in the vertical direction than the contact portion 36. The conductive portion 38 is exposed to the outer surface of the vacuum envelope 10 opposite to the side surface of the rear substrate 12. These pairs of electrodes 30 are respectively provided at two corner portions spaced apart from each other in the diagonal direction of the vacuum envelope 10, and are arranged in a large layer with respect to the sealing layer 21.

The other structure of the said FED is the same as that of 1st Embodiment mentioned above, The same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted.

Next, the manufacturing method of the said FED is explained in full detail. This manufacturing method is almost the same as the manufacturing method according to the first embodiment, and the description will be mainly focused on different parts.

First, a front substrate 11 having a phosphor screen and a metal back 17 and a back substrate 12 having an electron emission element 22 are prepared. Next, the side wall 18 and the support member 14 are sealed on the inner surface of the back substrate 12 through the low melting glass 19 in the atmosphere. Thereafter, as shown in Figs. 18A and 18B, indium is applied in a predetermined width and thickness over the entire circumference of the sealing surface of the side wall 18 to form the sealing layer 21a. Indium is applied to the sealing surface facing the side wall of the front substrate 11 in a rectangular frame shape at a predetermined width and thickness to form the sealing layer 21b. In addition, the filling of the sealing layers 21a and 21b to the sealing surface of the side wall 18 and the front substrate 11 is a method of applying molten indium to the sealing surface as described above, or solid indium on the sealing surface. It is performed by the method of mounting.

Next, the pair of electrodes 30 are mounted on the back substrate 12 to which the side walls 18 are bonded. At this time, when the contact part 36 of each electrode 30 contacts the sealing layer 21a on the side wall 18, an electrode is electrically connected to the sealing layer. The pair of electrodes 30 are mounted at two corner portions facing the diagonal direction of the back substrate 12, and the lengths of the sealing layers 21a and 21b located between the electrodes are set substantially equal at both sides of each electrode. do.

After mounting the electrode 30, the rear substrate 12 and the front substrate 11 are spaced apart from each other by a predetermined interval, and in this state, the back substrate 12 is placed in the vacuum processing apparatus 100 shown in FIG. The front substrate 11 and the rear substrate 12 are sent to the baking and electron beam cleaning chamber 102 through the load chamber 101. In the baking and electron beam cleaning chamber 102, various members are heated to the temperature of 300 degreeC, and the surface adsorption gas of each board | substrate is discharge | released. At the same time, the electron beam from the electron beam generator is irradiated onto the phosphor screen surface of the front substrate 11 and the electron emission element surface of the back substrate 12 to clean the electron beams on the phosphor screen surface and the electron emission element surface, respectively.

In the baking process, the sealing layers 21a and 21b are heated and melted. The sealing layer 21a on the back substrate 12 side is intended to flow out through the electrode 30. Since each electrode 30 is provided with an outflow restricting portion 37 located higher than the contact portion 36, The indium melted by the outflow restriction part can be suppressed from flowing out of the rear substrate.

Subsequently, the front substrate 11 and the rear substrate 12 are sent to the cooling chamber 103 and cooled to a temperature of about 120 ° C., and then sent to the getter film deposition chamber 104 to deposit and form a Ba film on the outer side of the phosphor layer. . Subsequently, the front substrate 11 and the rear substrate 12 are sent to the assembly chamber 105 and held on the assembly guide hot plates 131 and 132, respectively, in a state in which they are disposed oppositely as shown in FIG. The front substrate 11 is fixed to the upper hot plate 131 by the fixing jig 133 so as not to fall.

Thereafter, the front substrate 11 and the back substrate 12 are moved in a direction close to each other while being kept at about 120 ° C. and pressurized to a predetermined pressure. Accordingly, the contact portion 36 of each electrode 30 is sandwiched between the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the rear substrate 12 side, and each electrode 30 It is electrically connected to the sealing layers 21a and 21b. At this time, since the contact portion 36 is formed in a horizontal length of 2 mm or more, it can be stably contacted with the sealing layers 21a and 21b. In addition, when indium is applied to the contact portion 36 of the electrode 30 in advance, the electricity can be supplied to the sealing material more stably.

After electrically connecting the power supply 120 to the pair of electrodes 30 in this state, the sealing layer 21a on the side wall 18 side and the sealing layer 21b on the front substrate 11 side are YES. For example, apply a DC current of 140 A in constant current mode. Thereby, the sealing layers 21a and 21b are heated and indium melts. At this time, when the connection terminal connected to the power supply 120 is brought into contact with the conducting portion 38 of the electrode 30, the power supply, the electrode, the electrode, and the sealing layers 21a and 21b can be reliably conducted. In addition, since each electrode 30 is in constant contact with the sealing layers 21a and 21b, it can be energized stably, so that almost the same amount of current can flow through each of the sealing layers to be melted equally.

When the indium is melted as described above, the sealing layers 21a and 21b are fused to form the sealing layer 21, and the sealing layer 21 seals the periphery of the front substrate 11 and the side wall 18. The vacuum envelope 10 formed by the above process is cooled to room temperature in the cooling chamber 106 and taken out from the unload chamber 107. This completes the vacuum envelope 10. After the vacuum envelope 10 is completed, the electrode 30 may be removed as necessary.

According to the FED comprised as mentioned above and its manufacturing method, the effect similar to 1st Embodiment mentioned above can be acquired. Moreover, according to 4th Embodiment, since the electrode 30 for energizing a sealing material has the outflow control part located higher than a contact part, the melted sealing material flows out through an electrode in the baking process etc., and is regulated. For this reason, the sealing layer can be kept to a uniform thickness, the envelope can be reliably sealed over the circumference of the applicator, and the short circuit of the wiring due to the outflow of the sealing material can be prevented. Therefore, a low cost FED can be obtained which is excellent in productivity and stable and satisfactory.

In the above-described fourth embodiment, the body portion 34 of each electrode 30 is almost entirely extended upwardly from the contact portion 36 to form an outflow restricting portion 37. For example, As shown in FIG. 20, a part of the body part 34 may be extended to a position higher along the vertical direction than the contact part 36 to constitute the outflow restricting part 37. As shown in FIG. In addition, although each electrode 30 is provided with a mounting portion integrally, as shown in Figs. 21 and 22, the electrode 30 has a contact portion 36, a body portion 34, an outflow restriction portion 37 and a base. The base part 39 may be provided, and the structure attached to the back substrate 12 using the separate clip 46 may be sufficient.

In addition, in the modification shown in FIGS. 20-22, another structure is the same as that of 4th Embodiment mentioned above, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted. And when using the electrode which concerns on these modifications, the effect similar to embodiment mentioned above can be acquired.

Next, an FED according to a fifth embodiment of the present invention will be described.

As shown in Figs. 23 to 25, the FED has a vacuum envelope 10 and a plurality of, for example, a pair of electrodes 30 mounted on the vacuum envelope. The pair of electrodes 30 are mounted to the envelope 10 in a state of being electrically connected to the sealing portion 21. Each electrode 30 is formed by bending a conductive member, for example, a copper plate having a thickness of 0.2 mm. That is, the electrode 30 is bent so that the cross-section is almost U-shaped, the clip-shaped mounting portion 32 to be mounted by sandwiching the periphery of the front substrate 11 or the rear substrate 12, the wedge shape parallel to the mounting portion A flat conductive portion formed by the body portion 34 of the body portion, a contact portion 36 located at the extended end of the body portion, a drain portion 35 extending from the contact portion to the body portion side by side, and a mounting portion and a rear portion of the body portion; 38 is provided integrally.

The contact portion 36 is formed to have an extension length L in the horizontal direction of 2 mm or more. The body portion 34 is formed in a band shape and extends obliquely upward from the contact portion 36 and obliquely upward. For this reason, the body part 34 forms the outflow restricting part 37 located higher than the contact part 36 along a perpendicular direction. The body part 34 forms the flow path which flows an electric current from the conducting part 38 to the contact part 36.

The drain portion 35 is formed in a band shape and extends obliquely downward from the contact portion 36 to the outside. For this reason, the drain part 35 is formed in the position lower than the contact part 36 along a perpendicular direction. The width of the drain portion 35 is narrower than the width of the body portion 34, and is formed, for example, about 1 mm. The drain part 35 forms a path for outflowing the molten sealing material to the outside as described later.

Each electrode 30 is mounted in a state in which the vacuum envelope 10 is elastically coupled to, for example, the rear substrate 12. That is, the electrode 30 is mounted to the vacuum envelope 10 in a state in which the peripheral edge of the rear substrate 12 is elastically sandwiched through the mounting portion 32. The contact portion 36 of each electrode 30 is in contact with the sealing layer 21 and is electrically connected to the sealing layer. The body portion 34 extends from the contact portion 36 to the outside of the vacuum envelope 10, while the outlet restriction portion 37 is located higher in the vertical direction than the contact portion 36. The drain portion 35 extends from the contact portion 36 to the outside of the vacuum envelope 10, but is located at a position lower in the vertical direction than the contact portion 36. The conductive portion 38 faces the side surface of the rear substrate 12 and is exposed to the outer surface of the vacuum envelope 10. These pairs of electrodes 30 are respectively provided at two corner portions spaced apart from each other in the diagonal direction of the vacuum envelope 10 and are arranged in a large layer with respect to the sealing layer 21.

The other structure of the said FED is the same as that of 4th Embodiment mentioned above, The same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted. In addition, the FED which concerns on 5th Embodiment is manufactured by the same manufacturing method as the manufacturing method which concerns on 4th Embodiment.

According to the fifth embodiment, the sealing layers 21a and 21b are heated and melted in the baking step. The sealing layer 21a on the rear substrate 12 side is intended to flow out through the electrode 30, and each electrode 30 is provided with an outflow restricting portion 37 located higher than the contact portion 36. Therefore, inflow of molten indium by the outflow restricting part to the outside of the rear substrate is suppressed. In addition, a part of the molten indium flows out from the drain portion 35 of the electrode 30 to the outside of the rear substrate 12, and since the width of the drain portion is smaller than the width of the body portion 34, the amount of outflow Is very small. For example, the outflow amount of molten indium can be suppressed about 1/10 compared with the electrode which does not have the outflow control part 37 and the drain part. When this amount flows out, the problem that the thickness of a sealing layer becomes comparatively thin and it becomes easy to leak from a sealing part, and the problem that a spilled indium contacts the wiring on a board | substrate, etc., can prevent the problem.

In the sealing step, the sealing layers 21a and 21b are fused to form the sealing layer 21, and the peripheral edge and the sidewall 18 of the front substrate 11 are sealed through the sealing layer. At this time, since the front substrate 11 and the back substrate 12 are pressed in a direction close to each other, the molten indium is pressed to generate excess indium. This excess indium is likely to flow out to the substrate side. Here, since the drain portion 35 located lower than the contact portion 36 is provided in each electrode 30, the molten surplus indium actively flows out of the drain portion 35 to the outside of the substrate. That is, since the drain portion 35 of the electrode 30 is formed to have a narrower width than the body portion 34 and indium is pressurized, any excess indium flows along the drain portion 35 of the electrode to the periphery of the substrate. . Each electrode 30 is attached to the corner portion of the back substrate 12, and the drain portion 35 extends to a position deviating from the wiring 23. Therefore, since the indium flowing out along the drain portion 35 does not contact the wiring 23, shorting of the wiring due to the inflow of indium and the like can be prevented. In addition, when indium is applied in advance to the drain portion 35 of the electrode 30 and its vicinity, the sealing material can be more stably flowed out.

In addition, according to the FED and the manufacturing method which concerns on 5th Embodiment, the effect similar to 1st Embodiment mentioned above can be acquired.

In the fifth embodiment, the body portion 34 of each electrode 30 almost entirely extends upward from the contact portion to form the outflow restricting portion 37. However, as shown in FIG. A part of the body part 34 may be extended to a position higher along the vertical direction than the contact part 36 to constitute the outflow restricting part 37.

In addition, in the fifth embodiment, each electrode 30 is integrally provided with a mounting portion, but as shown in Figs. 27 and 28, the contact portion 36, the body portion 34, the outflow restriction portion 37, The structure may be equipped with the drain part 35 and the base part 39, and may be attached to the back substrate 12 using the separate clip 46 which has the conduction part 38. As shown in FIG.

The drain portion 35 of the electrode 30 is not limited to the configuration installed side by side of the body portion 34, and may be provided in the center portion of the body portion 34 as shown in FIG. In this case, the drain portion 35 is formed by cutting a part of the body portion 34, the opening in the body portion to allow the outflow of the sealing material from the contact portion 36 to the drain portion 35 (開孔) 42 is formed.

As shown in FIG. 29, the drain portion 35 of the electrode 30 is not limited to one, and a pair may be provided on both sides of the body portion 34. As shown in FIG. In this case, the structure of each drain part 35 is the same as that of embodiment mentioned above.

In addition, in the modification shown in FIGS. 26-29, another structure is the same as that of 5th Embodiment mentioned above, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted. And when using the electrode which concerns on these modifications, the effect similar to embodiment mentioned above can be acquired. Moreover, it is also possible to use the structure which combined the above-mentioned embodiment and the modification shown in FIGS. 26-29 with each other.

Next, an FED and a manufacturing method thereof according to the sixth embodiment of the present invention will be described. As shown in Fig. 30, the FED has a flat rectangular vacuum envelope 30 and a plurality of, for example, a pair of electrodes 30 mounted on the envelope. In the sixth embodiment, since the configuration of the FED is the same as that of the embodiment described above except for the electrode 30, the description will be mainly focused on different configurations. At the same time, the configuration of the FED is described in parallel with the manufacturing method.

As shown in Figs. 13A and 13B, the front substrate 11 on which the phosphor screen 16 and the metal back 17 are formed and the back substrate 12 on which the electron emission elements are formed are prepared. Next, the side wall 18 and the support member 14 are sealed on the inner surface of the back substrate 12 through the low melting glass in the atmosphere. Thereafter, indium is applied to the entire circumference of the sealing surface of the side wall 18 in a predetermined width and thickness to form a sealing frame 21a having a rectangular frame shape. Indium is applied to the sealing surface opposite to the side wall of the front substrate 11 in a rectangular frame shape at a predetermined width and thickness to form a rectangular frame sealing layer 21b corresponding to the sealing layer 21a on the back substrate 11 side. ). In addition, the filling of the sealing layers 21a and 21b to the sealing surface of the side wall 18 and the front substrate 11 is a method of applying molten indium to the sealing surface as described above, or indium in a solid state to the sealing surface. This is done through a method of wit.

Subsequently, the front substrate 11 and the back substrate 12 are sent into the vacuum processing apparatus shown in FIG. 9, for example, and sealed in a vacuum atmosphere. In this case, the front substrate 11 and the rear substrate 12 are heated to sufficiently degas. The heating temperature is set at an appropriate time at about 200 ° C to 500 ° C. The degassing process reduces the gas emitted from the inner wall of the envelope constituent member to prevent deterioration of the vacuum degree of the vacuum envelope. Next, a getter film is formed on the phosphor screen 16 of the front substrate 111. This is because after the vacuum envelope is formed, the residual gas is adsorbed and exhausted through the getter film to maintain the degree of vacuum in the vacuum envelope at a good level.

Next, the front substrate 11 and the back substrate 12 are polymerized with each other at a predetermined position so that the phosphor screen 16 and the electron emission element face each other. In this state, the sealing layers 21a and 21b are energized, and these sealing materials are heated and dissolved. After that, the energization is stopped and the heat of the sealing layers 21a and 21b is rapidly diffused and conducted to the front substrate 11 and the sidewall 18 to solidify the sealing layers 21a and 21b. As a result, the front substrate 11 and the side wall 18 are sealed to each other by the sealing layers 21a and 21b.

Next, the sealing process described above will be described in more detail.

31 and 32, in the state before sealing, the temperature of the front substrate 11 and the back substrate 12 is set to be lower than the melting point of the sealing layers 21a and 21b, so that the sealing layers 21a and 21b are formed. Is solidified. In this state, the front substrate 11 and the back substrate 12 are polymerized at a predetermined position to polymerize the sealing layers 21a and 21b to each other. In addition, a predetermined load is applied to the front substrate 11 and the rear substrate 12 in a direction close to each other through the pressing devices 23a and 23b. The image display area is maintained at predetermined intervals by the support member 14.

At this time, the plate-shaped electrode 30 is interposed between the sealing layers 21a and 21b of the two corner portions facing the diagonal direction of the side wall 18. As shown in Fig. 31B, the electrode 30 is formed in a Y shape each having two contact portions 36a and 36b which are in electrical contact with the sealing layer. The contact portions 36a and 36b of the electrodes 30 are in contact with these sealing layers on both sides of the corner portions of the sealing layers 21a and 21b. Between the two contact parts 36a and 36b, the clearance gap 30c for flowing out the molten sealing material is formed. As a method of inserting the electrode 30, a method of fixing the electrode 30 with a clip of the same material may be used. The electrode 30 is formed of a single element or an alloy containing at least any one of Cu, Al, Fe, Ni, Co, Be, and Cr.

Then, the feed terminals 24a and 24b are brought into contact with the electrode 30, respectively. These power supply terminals 24a and 24b are connected to the power supply 120. In this state, when a predetermined current is passed through the power supply terminals 24a and 24b and the electrodes 30 to the sealing layers 21a and 21b, only the sealing layers 21a and 21b generate heat and melt. At this time, the molten excess sealing material flows out from the edge of the side wall 18 to the outside of the side wall through the gap 30c surrounded by the two contact portions 36a and 36b of each electrode 30 and the sealing layer.

Thereafter, when the power supply is stopped and the power supply terminals 24a and 24b are removed, the heat of the sealing layers 21a and 21b having a small heat capacity is reduced by the temperature gradient, so that the front substrate 11 and the side wall 18 are reduced. Heat dissipation. The sealing layers 21a and 21b reach thermal equilibrium with the front substrate 11 and the side wall 18 with a large heat capacity, and are rapidly cooled and solidified. As a result, an FED having a vacuum envelope 10 in which the front substrate 11 and the sidewall 18 are sealed to each other by the sealing layers 21a and 21b to maintain a high vacuum therein is obtained. In addition, after sealing, the electrode 30 is fixed to the vacuum envelope 10 in a sealed state together with the sealing layers 21a and 21b.

According to the FED which concerns on 6th Embodiment comprised as mentioned above, and its manufacturing method, a vacuum enclosure can be vacuum-sealed by a very short time and a simple manufacturing apparatus. In other words, by using an electrically conductive sealing material, only a sealing material having a small heat capacity, that is, a small volume, can be selectively heated without heating the substrate, so that degradation of positional accuracy due to thermal expansion of the substrate can be suppressed. have.

Since the heat capacity of the sealing layer is very small compared to the heat capacity of the substrate, the time required for heating and cooling can be significantly shortened compared to the conventional method of heating the entire substrate, so that the mass productivity can be significantly improved. In addition, since the only device required for sealing is a simple power supply terminal and a mechanism for contacting them, a clean device that is extremely simple and suitable for ultra-high vacuum can be realized.

Each electrode 30 for energizing the sealing layers 21a and 21b has a plurality of contact portions 36a and 36b, and a gap 30c is formed between these contact portions. Thereby, the yongyoung sealing material in the molten state at the time of sealing can be positively flowed out from the clearance gap 30c prescribed | regulated between the contact parts 36a and 36b. Therefore, if the contact portion of the electrode 30 is provided at an appropriate position, the sealing material can be prevented from protruding onto the wiring of the board, etc., thereby preventing the occurrence of a short between the wirings and enabling a fast and stable sealing.

The electrode 30 is not limited to the Y-shape described above because it may have a gap in which the sealing material passes between the contact portions, and may be U-shaped, for example, as shown in FIG. The electrode 30 may have three or more contact parts which contact with a sealing material. For example, as shown in Fig. 34A, the electrode 30 may be formed in a broom shape having four contact portions 36a, 36b, 32a, and 32b. In this case, the clearance gap 30c which a sealing material passes between adjacent contact parts is formed.

Further, the contact portion of the electrode 30 is not limited to both sides with the corner portion of the vacuum envelope interposed therebetween, and may contact the sealing portions 21a and 21b at one side of the edge portion of the envelope, as shown in FIG. 34B. . Since the electrode 30 is in the position which shifted slightly from the edge part, the sealing material may flow out from the edge part 30d of an outer envelope. 33, 34A, and 34B, respectively, the other configurations are the same as in the above-described embodiment, the same reference numerals are assigned to the same parts, and detailed description thereof is omitted. Moreover, also in these modified examples, the effect similar to 6th Embodiment can be acquired.

In the sixth embodiment described above, the electrode 30 is in direct contact with the encapsulation layers 21a and 21b. However, according to the manufacturing method of the seventh embodiment shown in FIG. 31) and the electrode may be brought into contact with the sealing layer via the conductive material layer 31.

That is, in the sealing process, a pair of plate-shaped electrodes 30 are sandwiched between the sealing layer 21a and the sealing layer 21b, respectively. The surface which contacts the sealing layers 21a and 21b of each electrode 30 is previously coat | covered with the conductive material layer 31. As shown in FIG. Here, both surfaces of each electrode 30 are covered with an alloy containing In or In, which is the same conductive material as the sealing layers 21a and 21b, for example. The conductive material layer 31 is formed by applying the conductive material to the electrode surface through, for example, a soldering iron applied with ultrasonic waves. Each electrode 30 is in contact with the sealing layers 21a and 21b through the conductive material layer 31. The electrode 30 is formed of a single element or an alloy containing at least any one of Cu, Al, Fe, Ni, Co, Be, and Cr.

Then, the feed terminals 24a and 24b are brought into contact with the electrode 30, respectively. These power supply terminals 24a and 24b are connected to the power supply 120. In this state, when a predetermined current is passed through the power supply terminals 24a and 24b and the electrodes 30 to the sealing layers 21a and 21b, only the sealing material generates heat and is dissolved. Thereafter, when the power supply is stopped and the power supply terminals 24a and 24b are separated, the heat of the sealing layers 21a and 21b having a small heat capacity is radiated to the front substrate 11 and the side wall 18 by the temperature gradient. As a result, the sealing layers 21a and 21b reach thermal equilibrium with the front substrate 11 and the sidewall 18 having a large heat capacity and are rapidly cooled and solidified. Thus, a FED having a vacuum envelope 10 in which the front substrate 11 and the side wall 18 are sealed to each other by the sealing layers 21a and 21b and the inside maintains a high vacuum is obtained. In addition, after sealing, the electrode 30 is fixed to the vacuum envelope 10 in a sealed state together with the sealing layers 21a and 21b.

In the seventh embodiment, the other configuration is the same as in the sixth embodiment described above, the same reference numerals are assigned to the same parts, and detailed description thereof is omitted. Also in the 7th embodiment comprised as mentioned above, the effect similar to 6th embodiment can be acquired. In addition, the contact surface with the sealing layer of the electrode 30 for energizing the sealing layers 21a and 21b is covered with the conductive material layer 31. Thereby, the oiliness of the electrode 30 and the sealing material is improved at the time of energizing melting of the sealing layers 21a and 21b, and the increase in the contact resistance between a sealing material and an electrode can be prevented. Therefore, abnormal heat generation at the contact portion can be prevented, and the fear that the sealing layers 21a and 21b are disconnected can be eliminated. As a result, FED can be produced in a short time and in high yield.

In addition, if the surface of the electrode 30 is covered with the conductive material layer 31, the excess sealing material in the molten state at the time of sealing can be actively discharged from the electrode to the outside of the envelope.

In the seventh embodiment described above, the electrode 30 is sandwiched between the sealing layers 21a and 21b. However, the electrode 30 may be energized in a state in which the electrode is in contact with only one sealing member. That is, as shown in Fig. 36, the front substrate 11 and the rear substrate 12 are polymerized at predetermined positions, and the sealing layers 21a and 21b are polymerized to contact each other. A predetermined sealing load is applied to the front substrate 11 and the rear substrate 12 by the pressing devices 23a and 23b in a direction close to each other. And the electrode 30 is arrange | positioned in the state which contacts each sealing material 21b, respectively.

The electrode holding method is a method of fixing the electrode with a clip made of the same material as the sealing layer so as to contact the sealing layers 21a and 21b of the front substrate 11 in advance, or an electrode with a clip or the like to the feed terminals 24a and 24b. In which the front substrate 11 and the back substrate 12 are polymerized at a predetermined position, the electrode may be inserted.

In this case, the surface which contacts the sealing layer 21b of each electrode 30 is previously coat | covered with the conductive material layer 31. FIG. The conductive material layer 31 is formed by applying the conductive material to the electrode surface through, for example, a soldering iron applied with ultrasonic waves. In addition, in order for the excess sealing material to protrude actively from the electrode 30 at the time of sealing, you may form a conductive material layer also in the surface which does not contact with the sealing material of an electrode.

The other structure is the same as that of 7th Embodiment, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted. And also in the said structure, the effect similar to 7th Embodiment mentioned above can be acquired.

As a form of the electric current supplied to the sealing material, not only a direct current but also an alternating current varying at a commercial frequency may be used. In this case, the apparatus can be simplified by eliminating the trouble of converting the commercial current transmitted by alternating current into direct current. Moreover, you may use the alternating current which fluctuates at the high frequency of a kHz level. In this case, since Joule heat is increased by the part which the effective resistance value with respect to a high frequency increases by a skin effect, the heating effect similar to the above is obtained with a smaller electric current value.

In addition, about the electric power and time which are energized, it is about 5 to 300 second in the said embodiment. If the energization time is long (when the power is small), the cooling rate decreases due to the temperature rise around the substrate or the obstacle is caused by thermal expansion. If the energization time is short (the power is high), the disconnection or glass due to the uneven charging of the conductive sealing material Cracking occurs due to thermal stress. Therefore, it is desirable to perform the optimal condition setting for each object by the power and time (including temporal power change) which are energized.

In addition, about the temperature difference of the board | substrate temperature at the time of sealing and melting | fusing point of a sealing material, it is about 20 degreeC-150 degreeC in the said embodiment. When the temperature difference is large, the glass thermal stress that can shorten the cooling time increases, so it is also preferable to perform the optimum condition setting for each object.

Next, the manufacturing method of FED which concerns on 8th Embodiment of this invention is demonstrated. In 8th Embodiment, since the structure of the FED and the structure other than the sealing process of a manufacturing method are the same as that of 6th Embodiment mentioned above, it demonstrates centering around a different part.

As shown in Fig. 37, in the sealing step, the front substrate 11 and the back substrate 12 sent to the assembly chamber of the vacuum processing apparatus are in a state in which the outer surfaces are in close contact with the hot plates 131 and 132, respectively. Is maintained. That is, the back substrate 12 is placed on the hot plate 132, and the front substrate 11 is fixed to the upper hot plate 131 through the fixing jig 133 so as not to fall.

38 and 39, for example, a pair of flat electrode 30 having a thickness of about 0.2 mm made of copper is prepared, and these electrodes 30 are provided with the front substrate 11 and the rear substrate. Insert between (12). At this time, the pair of electrodes 30 are provided at opposing positions, and the tip of each electrode is disposed between the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the back substrate 12 side. Inserted to position For example, a pair of electrodes 30 are disposed at two corner portions, two short sides, or two long sides facing in the diagonal direction in the substrate, respectively.

Next, the upper hot plate 131 and the front substrate 11 are lowered, and almost the entire sealing layer 21b provided on the front substrate 11 is attached to the sealing layer 21a provided on the side wall 18 on the rear substrate side. Contact. At the same time, at least one side of the front substrate 11 and the rear substrate 12, here, both substrates are pressurized to a desired pressure in a direction in which the two substrates are close to each other. At this time, each electrode 30 is sandwiched between the upper and lower sealing layers 21a and 21b. Accordingly, each electrode 30 is in electrical contact with the upper and lower indium 21 at the same time.

In this state, a direct current of 140 A is energized in both the sealing layers 21 a and 21 b from the power supply in the constant current mode through the pair of electrodes 30. As a result, the indium forming the sealing layer is heated and melted, and the front substrate 11 and the sidewall 18 are hermetically bonded by the sealing layers 21a and 21b.

Then, when electricity supply is stopped, molten indium hardens and the envelope 10 is formed. The envelope formed as described above is cooled to room temperature in the cooling chamber 106 and taken out from the unloading chamber 107. The vacuum envelope is completed by the above process.

According to the eighth embodiment, sealing and bonding of the front substrate 11 and the back substrate 12 are performed in the same vacuum atmosphere as in the above-described embodiment, so that the surface adsorption gas is sufficiently charged through baking and electron beam cleaning. Since it can release, a getter film excellent in adsorption ability can be obtained. In addition, since the entire front substrate and the rear substrate need not be heated as the indium is electrically heated and sealed and bonded, problems such as deterioration of the getter film and cracking of the substrate during the sealing process can be eliminated. At the same time, the sealing time can be shortened, so that a production method excellent in mass productivity can be obtained.

In addition, at least one side of the front substrate 11 and the rear substrate 12 disposed to face each other is pressed in a direction in which the front substrate and the rear substrate are close to each other, and at least a portion of the sealing layers 21a and 21b is applied to the front substrate and the rear substrate. In the state sandwiched between the peripheral portions of the electrode, the sealing layer is energized and heated and melted. As a result, the sealing layer after melting is sandwiched between the front substrate 11 and the side wall 18. Therefore, even if local irregularities are generated in the molten indium due to the cross-sectional dispersion of the sealing layers 21a and 21b along the periphery of the substrate, or gravity, the space between the front substrate 11 and the sidewall 18 is restricted. The molten indium which is made is pushed back to the uneven portion. As a result, the generation of irregularities in the sealing layer can be suppressed. Therefore, since the cross-sectional area of the sealing layer after melting becomes uniform over the entire circumference of the front substrate 11 and the side wall 18, the sealing layer can be heated evenly over the entire circumference at the time of bonding. In this regard, it is possible to prevent disconnection due to local heating of the sealing layer, generation of cracks in the substrate, and to perform stable bonding. In addition, it is possible to provide a FED which can be manufactured at low cost and which has high reliability and a good image.

According to the above-described manufacturing method, each electrode 30 is brought into electrical contact with both of the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the side wall side at the same time, i.e., equivalent to both sealing layers. The electricity can be supplied in the contacted state. Therefore, almost the same amount of current can flow through each sealing layer. As a result, the sealing layer provided in the front board | substrate 11 and the back board | substrate 12 can be heated and melted evenly, and stable bonding can be performed.

Next, the manufacturing method of FED which concerns on 9th Embodiment of this invention is demonstrated.

In the eighth embodiment described above, the electrode 30 is sandwiched between the upper and lower sealing layers 21a and 21b so as to be electrically contacted with both sealing layers at the same time. According to the ninth embodiment, the sealing layers 21a and 21b are partially welded to the portion where the electrode 30 is in contact with each other, and the electrode 30 is in contact with the welding portion.

In detail, the front substrate 11 and the back substrate 12 sent to the assembly chamber 105 of the vacuum processing apparatus are held by the plurality of support pins 128, as shown in FIG. In the direction of pressure. Thereby, the sealing layer 21b provided in the front substrate 11 and the sealing layer 21a provided in the side wall 18 contact each other. In addition, the sealing layer 21b provided in the part which the electrode 30 contacts, for example, the front substrate 11, has the extension part 21c extended outward from another part. For example, the extension part 21c is provided in the vicinity of the two edge parts which oppose the front substrate 1, respectively.

Next, the induction heating coil 127 is disposed opposite the position corresponding to the extension portion 21c, for example, below the corner portion of the back substrate 12. The induction heating coils 127 locally seal the sealing layers 21a and 21b with high frequency to partially weld the sealing layers. Thereby, the welding part 21d is formed in two corner | angular parts facing in a diagonal direction, respectively.

Thereafter, the electrode 30 having a thickness of about 0.2 mm made of copper is inserted between the front substrate 11 and the rear substrate 12 and brought into contact with the extension portion 21c of each weld portion 21d. In this state, electricity is supplied from the power supply to the sealing layers 21a and 21b via the pair of electrodes 30. As a result, indium is heated to melt and the front substrate 11 and the sidewall 18 are hermetically bonded by the sealing layers 21a and 21b.

Then, when electricity supply is stopped, molten indium hardens and the envelope 10 is formed. The envelope formed in this way is cooled to room temperature in the cooling chamber and taken out from the unloading chamber. The vacuum envelope is completed by the above process.

The other structure is the same as that of embodiment mentioned above, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted.

According to the ninth embodiment configured as described above, the indium facing each other at the position where the electrode 30 is in contact with each other is welded before energization, so that the sealing layer 21b and the sidewall 18 on the front substrate 11 side are welded. Almost the same amount of current can be divided and flowed into the side sealing layer 21a. Therefore, both sealing layers 21a and 21b can be heated and melted evenly. Since the front substrate 11 and the back substrate 12 are energized in the sealing layer in a state in which they are pressed in a direction proximate to each other, the same as the eighth embodiment, the change in the cross-sectional area of the sealing layer after melting is suppressed. The whole can be heated up uniformly. In view of the above, since the front substrate 11 and the back substrate 12 are stably bonded, a FED having improved reliability can be obtained.

In the eighth and ninth embodiments, for example, the electrode may be introduced into the vacuum processing apparatus in a state where the electrode is mounted on the substrate in advance, and the shape and the material of the electrode are not limited to the above embodiment. In addition, although it is comprised so that it may seal in the state which provided the sealing material in both the front substrate and the side wall, you may seal in the state which installed the sealing material in at least one side of the front substrate and the side wall.

Next, an FED and a manufacturing method thereof according to the tenth embodiment of the present invention will be described.

As shown in Figs. 42 and 43, the FED has a vacuum envelope 10 and a plurality of, for example, a pair of electrodes 30 mounted on the vacuum envelope. The vacuum envelope 10 includes a front substrate 11 and a rear substrate 12 each formed of a rectangular glass plate, and the substrates 11 and 12 are joined to peripheral edges through sidewalls 18 of a rectangular frame shape. have. The phosphor screen 16, the metal back 17, and the getter film 13 are formed on the inner surface of the front substrate 11. On the inner surface of the back substrate 12, a plurality of electron emission elements 22 for exciting the phosphor layer of the phosphor screen 16 are provided. In addition, on the inner surface of the back substrate 12, a plurality of wirings 23 for supplying electric potential to the electron emission element 22 are provided in a matrix form, and the ends thereof are drawn out to the periphery of the vacuum envelope 10. .

The pair of electrodes 30 are mounted to the envelope 10 in a state of being electrically connected to the sealing layer 21. These electrodes 30 are used as electrodes when energizing the sealing layer 21. As shown in Fig. 44, each electrode 30 is formed by bending a conductive member, for example, a 0.2 mm thick steel sheet. That is, the electrode 30 is bent to have a substantially U-shaped cross-section. The mounting portion 32, the body portion 34 extending from the mounting portion and serving as a passage of current to the sealing layer, is located at the extended end of the body portion. And a flat conductive portion 38 formed by a contact portion 36 which is in contact with the sealing layer and a rear portion of the mounting portion and the body portion.

The mounting part 32 is integrally provided with the clamping part bent in a clip form, and is comprised so that it may be pinched and mounted by the peripheral part of the front board | substrate 11 or the back board | substrate 12. FIG. The contact portion 36 is formed to have an extension length L in the horizontal direction of 2 mm or more. In addition, the body portion 34 is formed in a belt shape and extends obliquely upward from the carriage portion 32. For this reason, the contact part 36 is located higher than the mounting part 32 and the body part 34 along a perpendicular direction.

42, 43, and 44, each electrode 30 is resilient through, for example, the mounting portion 32 of the vacuum envelope 10, for example, the periphery of the back substrate 12 is elastic. It is attached to the vacuum envelope 10 in the state clamped. The contact portion 36 of each electrode 30 is in electrical contact with the sealing layer 21, respectively. The body portion 34 extends from the contact portion 36 to the outside of the vacuum envelope 10, while the conductive portion 38 is exposed to the outer surface of the vacuum envelope 10 opposite the side surface of the back substrate 12. have. These pairs of electrodes 30 are respectively provided at two corner portions spaced apart from each other in the diagonal direction of the vacuum envelope 10, and are arranged symmetrically with respect to the sealing layer 21.

The other structure of the said FED is the same as that of 1st Embodiment mentioned above, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted.

Next, the manufacturing method of FED which concerns on 10th Embodiment is demonstrated in detail. Here, it demonstrates centering around a different part from the manufacturing method which concerns on 1st Embodiment.

First, as in the first embodiment, the front substrate 11 on which the phosphor screen 16 and the metal back 17 are formed and the back substrate 12 on which the electron emission elements 22 are formed are prepared. Next, the side wall 18 and the support member 14 are sealed on the inner surface of the back substrate 12 through the low melting glass 19 in the atmosphere. Thereafter, indium is applied to the entire circumference of the sealing surface of the side wall 18 in a predetermined width and thickness to form the sealing layer 21a. Indium is applied to the sealing surface facing the side wall of the front substrate 11 in a rectangular frame shape at a predetermined width and thickness to form the sealing layer 21b.

Next, as shown in FIG. 45, a pair of electrodes 30 are mounted on the back substrate 12 to which the side walls 18 are bonded. At this time, each electrode 30 is mounted in a state in which the contact portion 36 does not contact the sealing layer 21a and faces the sealing layer with a gap between them. The electrode 30 requires a pair of + and-poles on the substrate, and it is preferable that the respective conduction paths of the sealing layers 21a and 21b which are energized in parallel between the pair of electrodes are equal in length. Accordingly, the pair of electrodes 30 are mounted at two corner portions facing the back substrate 12 in the diagonal direction, and the lengths of the sealing layers 21a and 21b located between the electrodes are almost equal on both sides of each electrode. Set.

After mounting the electrode 30, the rear substrate 12 and the front substrate 11 are spaced apart from each other by a predetermined interval, and in this state, the back substrate 12 is placed in the vacuum processing apparatus 100 shown in FIG. The front substrate 11 and the rear substrate 12 are sent to the baking and electron beam cleaning chamber 102 through the load chamber 101. In the baking and electron beam cleaning chamber 102, various members are heated to the temperature of 300 degreeC, and the surface adsorption gas of each board | substrate is discharge | released. At the same time, the electron beam from the electron beam generator is irradiated onto the phosphor screen surface of the front substrate 11 and the electron emission element surface of the back substrate 12 to clean the electron beams on the phosphor screen surface and the electron emission element surface, respectively.

The sealing layers 21a and 21b are melted once and have fluidity by heating in the baking step, but the contact portions 36 of the electrodes 30 face each other at intervals without contacting the sealing layers 21a and 21b. Therefore, molten indium can be prevented from flowing out of the back substrate 12 through the electrode 30.

The baked and electron beam cleaned front substrate 11 and back substrate 12 are sent to the cooling chamber 103, cooled to a temperature of about 120 ° C, and then sent to the getter film deposition chamber 104. In this vapor deposition chamber 104, a Ba film, which is a getter film 27, is formed on the outer side of the metal back 17 by vapor deposition. Since the Ba film can prevent the surface from being contaminated with oxygen, carbon, or the like, the Ba film can be maintained in an active state.

Next, the front substrate 11 and the rear substrate 12 are sent to the assembly chamber 105. As shown in Fig. 46, in this assembly chamber 105, the front substrate 11 and the rear substrate 12 are held on hot plates 131 and 132 in the assembly chamber, respectively, in a state in which they are disposed oppositely. The front substrate 11 is fixed to the upper hot plate 131 by the fixing jig 133 so as not to fall.

Thereafter, the front substrate 11 and the back substrate 12 are moved in a direction close to each other while being kept at about 120 ° C. and pressurized to a predetermined pressure. The substrate may be moved by moving both of the front substrate 11 and the rear substrate 12 to approach each other, or by moving either one of the front substrate and the rear substrate to approach each other.

As shown in Fig. 47, when the pressure is applied at a predetermined pressure, the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the back substrate 12 side come into contact with each other and at the same time, The contact part 36 is sandwiched between the sealing layers 21a and 21b, and each electrode 30 is electrically connected to the sealing layers 21a and 21b. At this time, since the contact portion 36 is formed to have a horizontal length of 2 mm or more, it can be stably contacted with the sealing layers 21a and 21b. In addition, when indium is applied to the contact portion 36 of the electrode 30 in advance, a better contact and energization state with respect to the sealing layer can be obtained.

In this state, as shown in Fig. 10, after electrically connecting the power supply 120 to the pair of currents 30, the sealing layer 21a on the side wall 18 side and the sealing layer on the front substrate 11 side. For example, a direct current of 140 A is applied to each of the 21 b in the constant current mode. Thereby, the sealing layers 21a and 21b are heated and indium melts. At this time, when the connection terminal 40 connected to the power supply 120 is brought into contact with the conducting portion 38 of the electrode 30, the power supply and the electrode and the electrodes and the sealing layers 21a and 21b can be reliably conducted. . In addition, since each electrode 30 is brought into equivalent contact with the sealing layers 21a and 21b, it can be energized stably, so that almost the same amount of current can be sent to each of the sealing layers to be uniformly heated and melted.

By melting indium, the sealing layers 21a and 21b are fused to form the sealing layer 21, and the circumferential portion of the front substrate 11 and the side wall 18 are sealed through the sealing layer. The front substrate 11, the side wall 18 and the back substrate 12 sealed by the above process are cooled to room temperature in the cooling chamber 106 and are taken out from the unload chamber 107. Through this, the vacuum envelope 10 of the FED is completed.

In addition, after the vacuum envelope 10 is left, the pair of electrodes 30 may be removed as necessary.

According to the FED and the manufacturing method configured as described above, it is possible to flow a stable current to the sealing layer 21 through the electrode 30 mounted on the rear substrate during energization heating. Therefore, the conductive low melting point sealing material constituting the sealing layer at the time of sealing can be stably and reliably melted at a predetermined energization time, so that the sealing layer 21 can be quickly and surely sealed without cracking or the like. can do.

Since the surface adsorption gas can be fully discharged through the combination of baking and electron beam cleaning, a getter film excellent in adsorption capacity can be obtained. In addition, since the entire front substrate and the rear substrate need not be heated as the indium is electrically heated and sealed and bonded, the sealing operation can be performed in a short time and stably while keeping the entire substrate at a low temperature. At the same time, problems such as deterioration of the getter film and cracking of the substrate during the sealing process can be eliminated.

In the state before sealing, the contact part of an electrode opposes the sealing layer at intervals without contacting the sealing layer. Accordingly, even when the sealing material is melted in a baking step or the like, it is possible to prevent the melted sealing material from flowing out through the electrode. Therefore, the sealing layer can be maintained at a uniform thickness over the entire circumference, and at the same time, a short circuit of the wiring due to the outflow of the sealing material can be prevented. In view of the above, an FED capable of obtaining a stable and good image with excellent mass productivity can be obtained at low cost.

In the tenth embodiment described above, the contact portion 36 and the body portion 34 of each electrode 30 are formed in a band shape having the same width. As shown in FIG. 48, the body portion 34 is formed to have a width narrower than the width of the contact portion 36. As shown in FIG. Here, the body portion 34 is formed in a band shape having a uniform width over the entire length. In addition, as shown in Fig. 49, the body portion 34 is formed such that a portion connected to the contact portion 36 is narrower than the width of the contact portion, and gradually widens from the contact portion toward the mounting portion 32. You may also do it.

As such, when the electrode 30 having the width of the body portion 34, in particular, the width of the body portion at least connected to the contact portion 36 is smaller than the width of the contact portion, heat generation from the body portion 34 during energizing heating is achieved. The contact 36 can be quickly delivered to the sealing layer. Therefore, it is possible to more stably conduct electricity to the sealing layer, and the bonding can be performed quickly and reliably as the entire sealing layer is heated up almost uniformly.

Although the width | variety of the body part 34 was narrowed here, you may control by putting a hole and cutting into a body part, and you may control by making thickness of a body part thin. Moreover, you may control heat_generation | fever by superposition | polymerization of a board | plate material, for example, changing a material with respect to a body part and other parts.

In the tenth embodiment described above, the mounting portion of each electrode 30 is integrally provided with a clip-shaped clamping portion, but as shown in FIGS. 50 and 51, a separate clip 46 serving as a clamping portion is provided. You may provide it. That is, the electrode 30 has a contact portion 36, a body portion 34 and a flat base portion 39, which is formed integrally by bending the plate. In addition, the mounting part of the electrode 30 is comprised from the base part 39 and the separate clip 46. As shown in FIG. The electrode 30 is attached to the back substrate 12 by sandwiching the base 39 and the periphery of the substrate, here the periphery of the back substrate 12 with the clip 46.

In the modified examples shown in Figs. 48 to 51, other configurations are the same as those in the above-described embodiment, the same parts are denoted by the same reference numerals, and detailed description thereof is omitted. And also in these embodiment, the effect similar to embodiment mentioned above can be acquired.

In the tenth embodiment, a pair of electrodes is mounted on opposite diagonal portions of the rear substrate, and the substrate is energized to the sealing layer while the substrates are pressed against each other, but the present invention is not limited thereto, and a pair of electrodes is also mounted on the front substrate side. The configuration may be performed by energizing and heat-melting the sealing layer separately from the back substrate side.

In this case, as shown in Fig. 52, the front substrate 11 and the rear substrate 12 sent to the assembly chamber are fixed on the hot plates 131 and 132, are disposed to face each other, and then move in a direction close to each other. The contact portion of the electrode 30 mounted on the rear substrate 12 is in electrical contact with the sealing layer 21b on the front substrate 11 side, and the contact portion of the electrode 30 mounted on the front substrate 11 is the rear substrate. It is in electrical contact with the sealing layer 21a on the (12) side. At this time, the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the back substrate 12 side are kept in contact with each other.

In this state, when the current is applied to the sealing layers 21a and 21b through the electrode 30, the sealing layer 21a and the sealing layer 21b are melted separately. After melting, the energization is stopped and both substrates 11 and 12 are moved in a direction closer to each other and pressurized, whereby the sealing layers 21a and 21b are fused to form the sealing layer 21, and by the sealing layer 21 The periphery of the front substrate 11 and the side wall 18 are sealed.

Two pairs of electrodes are mounted on one substrate, but the pair of electrodes is energized to the sealing layer 21a on the back substrate 12 side, and the sealing layer 21b on the front substrate 11 side is connected to the pair of electrodes on the other side. It is also possible to configure so as to energize.

In this case, as shown in FIG. 53, two pairs of electrodes 30 are mounted on the back substrate 12. As shown in FIG. The front substrate 11 and the rear substrate 12 sent to the assembly chamber are fixedly arranged on the hot plates 131 and 132 to face each other, and then moved in a direction close to each other. The contact portions 36 of the pair of electrodes mounted on the rear substrate 12 are in electrical contact with the sealing layer 21b on the front substrate 11 side. The other pair of electrodes 30 has a convex portion 47 formed in the body portion 34 of the electrode as shown in FIG. When the front substrate 11 and the back substrate 12 move in a direction close to each other, the convex portion 47 abuts on the periphery of the front substrate 11 and the contact portion 36 of the electrode is on the back substrate 12 side. It moves to the sealing layer 21a of and electrically contacts with this sealing layer 21a. At this time, the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the back substrate 12 side are kept in contact with each other.

When a current is applied from the electrode 30 to the sealing layers 21a and 21b in this state, the sealing layers 21a and 21b are separately heated and melted. After melting, energization is stopped and the front substrate 11 and the back substrate 12 are moved in a closer direction to pressurize. As a result, the sealing layers 21a and 21b are fused to form the sealing layer 21, and the sealing layer 21 seals the periphery of the front substrate 111 and the side wall 18. As shown in FIG.

52, 53, and 54, the other configurations are the same as those of the tenth embodiment described above, and the same parts are denoted by the same reference numerals, and detailed description thereof will be omitted. In the above modifications, the same effects as in the above-described embodiments can be obtained.

In addition, in each embodiment mentioned above, after sealing of the vacuum envelope of FED is complete | finished, you may remove an electrode from a vacuum envelope. According to the manufacturing method which concerns on 11th Embodiment of this invention, it is comprised so that the electrode 30 may be excised from the vacuum envelope 10 after sealing. For example, after sealing in 10th embodiment, the envelope 10 is taken out from the unloading chamber 107 of a vacuum processing apparatus. The envelope 10 remains in a state where the electrode 30 is firmly bonded to the sealing layer 21. Thus, these electrodes 30 are removed from the envelope 10 through the following steps.

First, as shown in FIG. 55, the blade of the ultrasonic cutter 60 is inserted at the interface between the electrode 30 and the sealing layer 21, and the sealing layer 21 positioned around the contact portion 36 of the electrode is removed. Remove by ultrasonic cutting. In the case of using the ultrasonic cutter 60, the frictional force between the blade and the sealing layer 21 is reduced due to the ultrasonic vibration, and the sealing layer can be easily removed without being almost pressurized.

Thus, when the sealing layer around the contact part 36 of the electrode 30 is removed, the bonding force of an electrode and a sealing layer will become weak. In this state, as shown in Fig. 56, the catching portion 32 of the electrode 30 is chucked through a holding jig (not shown) and drawn in the direction of the arrow. Thus, without damaging the substrate or the sealing layer, The electrode 30 may be mechanically removed from the envelope 10.

When the electrode 30 is removed from the FED configured as described above, the concave portion 41 corresponding to the trace in which the contact portion 36 of the electrode is disposed is left in the sealing layer 21. That is, as shown in Figs. 57 and 58, for example, a width of 5 mm and a groove depth are respectively applied to the two corner portions 40a and 40b of the sealing layer 21 facing in the diagonal direction of the vacuum envelope 10, respectively. A recess 41 of about 1 mm is formed, each opening toward the outside of the vacuum envelope. Accordingly, the sealing layer 21 is formed at the edge portions 40a and 40b of the vacuum envelope 10 so that the width thereof is partially narrowed.

In the eleventh embodiment, other configurations are the same as those of the tenth embodiment described above, and the same parts are denoted by the same reference numerals and detailed description thereof will be omitted.

According to the manufacturing method and FED which concerns on 11th Embodiment comprised as mentioned above, the effect similar to the Example mentioned above can be acquired. The advantage of simplifying the handling of the envelope is obtained by removing the electrode, which is an unnecessary part, from the FED after sealing. For example, when assembling an FED into a cabinet as a monitor, it is possible to prevent the electrode from becoming obstructed. It is possible to eliminate a problem such that the protruding portion of the electrode from the substrate hurts other devices or workers, or the envelope is broken by the load acting on the envelope through the electrode. In addition, since it is not necessary to adapt the conveying apparatus or the like to correspond to the electrodes, the manufacturing cost can be reduced.

Ultrasonic vibration cutting may be performed with an ultrasonic cutter to remove the sealing material around the electrode, so that the electrode can be easily separated.

In the eleventh embodiment described above, an ultrasonic cutter was used to remove the electrode 30 from the vacuum envelope 10, but may be removed by the following method. That is, as illustrated in FIG. 59, the ultrasonic vibrator 64 connected to the ultrasonic wave generator 62 is brought into contact with the electrode 30 to directly vibrate the electrode 30. In this case, the electrode 30 itself functions as a blade of the ultrasonic cutter to ultrasonically cut the interface between the contact portion 36 and the sealing layer 21 of the electrode. Through this, since the sealing material around the electrode 30 can be removed, the electrode can be easily separated.

In the sealing layer 21, the electrode near the contact portion 36 of the sealed electrode 30 is partially heated and softened to draw the electrode from the sealing layer in a state in which the bonding force between the electrode and the sealing layer 21 is weakened. You may also This consists of induction heating of the sealing layer 21 near the contact portion 36 of the electrode 30. That is, after sealing as shown in FIG. 60, the induction heating coil 66 is disposed adjacent to the front substrate 11 of the vacuum envelope 10 in the vicinity of the electrode 30, for example. When a high frequency is applied to the induction heating coil 66, the sealing layer 21 is heated at a high frequency through the front substrate 11 to partially soften the sealing layer.

In this case, the mounting portion 32 of the electrode 30 is preliminarily chucked through a holding jig (not shown) to apply a tensile force to the substrate outward direction. Accordingly, when the bonding strength between the electrode 30 and the sealing layer 21 is weakened when the sealing layer 21 is softened, the electrode 30 may be drawn out. After drawing the electrode 30, the energization to the induction heating coil 66 is stopped and spaced apart from the vacuum envelope 10 so that the heated portion of the sealing layer 21 is rapidly cooled to complete the FED vacuum envelope 10. do.

In the embodiment shown in FIG. 60, after the induction heating and melting of the sealing layer 21 near the contact part 36 of the electrode 30, you may remove a electrode mechanically. In this case, when the heating time is long, the airtight sealing of the envelope may be broken as the large area of the sealing layer 21 melts out. Therefore, it is preferable to perform heating in a short time of about 3 to 30 seconds. When the heating is performed for a short time, only the sealing material in the vicinity of the contact portion 36 of the electrode 30 is melted, so that the electrode 30 can be removed while the vacuum airtightness of the envelope 10 is secured.

The periphery of the electrode may be heated by other methods such as a local heater instead of induction heating.

In the embodiments shown in Figs. 59 and 60, the other configurations are the same as those of the eleventh embodiment described above, and the same parts are denoted by the same reference numerals and detailed description thereof will be omitted.

In addition, concave portions 41 as shown in Figs. 61A to 61E may be formed in the sealing layer 21 of the FED depending on the position of the electrodes and the shape of the electrodes. According to the modification shown in Fig. 61A, the edge portions of the side wall 18 and the sealing layer 21 are formed at right angles, and the recessed portions 41 are formed at the corner portions of the sealing layer. It is coming true. According to the modification shown in Fig. 61B, the edge portions of the side wall 18 and the sealing layer 21 are formed at right angles, and the recess 41 is formed in the shape of chamfering the corner portions of the sealing layer and extends in the diagonal direction. have.

According to the modification shown in Fig. 61C, the corner portions of the side wall 18 and the sealing layer 21 are formed in an arc shape, and the recesses 41 are formed in the corner portions of the sealing layer, and the rectangles extend in the diagonal direction. Is fulfilling. According to the modification shown in Fig. 61D, the corner portions of the side wall 18 and the sealing layer 21 are formed in an arc shape, and the bottom surface portion of the recess 41 is formed at the corner portions of the sealing layer. As a result, it has an arc shape. Further, according to the modification shown in Fig. 61E, the corner portions of the side wall 18 and the sealing layer 21 are formed in an arc shape, and the concave portion 41 is formed in the shape of chamfering the corner portions of the sealing layer and is in a diagonal direction. Extends.

In addition, the recessed part 41 may be formed in other shapes other than the above according to the shape of the electrode used. In addition, as long as the electrode 30 is set so that each conduction path length of the sealing layer 21 may be equal, it is not limited to the edge part of an outer envelope, For example, you may arrange | position it to the center part of a long side or a short side. In this case, the recessed part 41 is formed in the center part of the long side or short side of the sealing layer 21 corresponding to the arrangement position of the electrode 30. The position and shape of the recessed part 41 can be set arbitrarily.

When sealing is performed in the assembly chamber 105 described above, the sealing layers 21a and 21b respectively provided to the front substrate 11 and the rear substrate 12 are separately energized to melt the sealing material, and then both substrates are melted. Sealing may be performed by pressing at a desired pressure in a direction close to each other. In this case, two pairs and four electrodes 40 are required for two substrates. These electrodes are each mounted at four corners of the back substrate 12, for example, a pair of electrodes conducts electricity to the sealing layer 21a provided on the back substrate 12, and another pair of electrodes is provided on the front surface. It is used for energizing the sealing layer 21b provided on the substrate 11. Therefore, when the electrode is removed after sealing, four recesses 41 are formed in the sealing layer 21 of the vacuum envelope 10.

The number of the recesses is not limited to the two or four positions described above, but can be any number depending on the number of electrodes used. For example, when conduction sealing is performed using four electrodes in which contact portions are divided into two, eight recesses are formed.

In the eleventh embodiment described above, the entire electrode is configured to be separated from the vacuum envelope, but a part of the electrode may be removed while remaining. According to the manufacturing method which concerns on 12th Embodiment of this invention, the electrode 30 is cut | disconnected in the middle of a body part, leaving the contact part 36, and removes another part of an electrode from an envelope.

In detail, for example, the front substrate 11, the side wall 18, and the rear substrate 12 sealed through the same process as the above-described tenth embodiment are sent to the cooling chamber 106 of the vacuum processing apparatus to room temperature. Is cooled. In this state, the contact portion 36 of the electrode 30 is firmly bonded to the sealing layer 21. As shown in FIG. 62, an automated cutter 70 is disposed in the cooling chamber 106. As shown in FIG. The automated cutter 70 is extended as if the body portion 34 of the electrode 30 is sandwiched, and the body portion 34 is cut near the contact portion 36 through the automated cutter.

Subsequently, as shown in Fig. 63, the mounting portion 32 of the cut electrode 30 is chucked through a holding jig not shown and drawn in the direction of the arrow to be removed from the back substrate 12. As a result, a part of the contact portion 36 and the body portion 34 of the electrode 30 remains on the envelope 10 side, and other portions of the electrode including the mounting portion 32 are separated from the envelope. Portions other than the contact portion 36 of the electrode 30 are elastically sandwiched by the back substrate 12 and can be easily separated without damaging the substrate or the sealing layer 21. After the tip of the electrode 30 is cut off, the envelope 10 is sent to the unloading chamber 107 and taken out from the unloading chamber 107. Through this, the vacuum envelope 10 of the FED is left.

In the FED configured as described above, as most of the electrodes 30 are removed, two edge portions of the vacuum envelope 10 include a conductor piece including a part of the contact portion 36 and the body portion 34 of the electrode 30 ( Only 71 remain.

In the twelfth embodiment, the other configuration is the same as that of the tenth embodiment described above, the same reference numerals are assigned to the same parts, and detailed description thereof is omitted.

According to the manufacturing method and FED which concerns on the 11th Embodiment comprised as mentioned above, the effect similar to embodiment mentioned above can be acquired. In addition, since most of the electrodes, which are unnecessary parts in the FED after sealing, are removed from the edge of the envelope, only the electrode tip remains. However, since the area is extremely narrow, the handling of the envelope is simple. For example, when assembling an FED into a cabinet as a monitor, it is possible to prevent the electrode from becoming obstructed. The protruding portion from the substrate of the electrode may damage other devices or workers, or the load may be applied to the envelope through the electrode, thereby destroying the envelope. In addition, since it is not necessary to modify a conveying apparatus etc. to correspond to an electrode, manufacturing cost can be reduced. By cutting the electrode 30 and separating it from the vacuum envelope, the electrode can be easily separated without damaging the sealing layer or the substrate.

Further, in the twelfth embodiment, the electrode is cut and removed in the cooling chamber of the vacuum processing apparatus. However, the electrode is cut in the cooling chamber and the outer substrate is taken out through the unload chamber, and then the rear substrate is manually You may remove the cut part of an electrode in (12).

In addition, although the electrode is configured to be cut by an automated cutter mounted in the cooling chamber of the vacuum processing apparatus, the present invention is not limited thereto, and a device for preparing and removing the electrode may be prepared separately from the vacuum processing apparatus, and the cutting may be performed by the apparatus. do. When the electrode is thin and can be easily cut, the worker may cut manually by using a cutter or the like.

In the above-mentioned embodiment, a pair of electrodes which energize the sealing layer 21a of the back substrate side and a pair of electrodes which energize the sealing layer 21b of the front substrate side are provided separately, and two pairs of four You may energize a sealing layer using an electrode. In this case, four conductor pieces 71 which correspond to an electrode tip part remain in the completed FED. The position, shape, and number of electrodes are not limited to the above embodiment.

Next, the manufacturing method and manufacturing apparatus of FED concerning 13th Embodiment of this invention are demonstrated. 64 shows an FED manufactured according to this embodiment. The other configuration of the FED is the same as that of the FED shown in the above-described embodiment, the same reference numerals are assigned to the same parts, and detailed description thereof is omitted.

In the manufacturing method of the FED according to the thirteenth embodiment, the front substrate 111 on which the phosphor screen 16 and the metal back 17 are formed and the back substrate on which the electron emission elements 22 are formed in the same manner as the above-described embodiment ( 12) Prepare.

The side wall 18 and the support member 14 are sealed on the inner surface of the back substrate 12 through the low melting glass in the atmosphere. Then, the rectangular sealing layer 21a which apply | coated indium to predetermined | prescribed width and thickness is formed in the perimeter of the sealing surface of the side wall 18. Indium is applied to the sealing surface opposite to the side wall of the front substrate 11 in a rectangular frame shape at a predetermined width and thickness to form a rectangular frame sealing layer 21b corresponding to the sealing layer 21a on the back substrate 11 side. ).

Next, as shown in FIG. 65, a pair of electrodes 30 for power supply are mounted on the back substrate 12 to which the side walls 18 are bonded. Each electrode 30 is formed by bending a conductive member, for example, a 0.2 mm thick copper plate. Each electrode 30 includes a mounting portion 32 sandwiching the periphery of the back substrate 12, a tongue section 44 held by a retaining jig described below, and a contact portion 36 in contact with the sealing layer 21a. It is provided integrally. Each electrode 30 is mounted on the rear substrate in a state in which the peripheral edge of the rear substrate 12 is elastically sandwiched through the mounting portion 32. At this time, the contact part 36 of each electrode 30 is contacted with the sealing layer 21a formed in the side wall 18, and an electrode is electrically connected with the sealing layer. The tongue piece 44 protrudes outward from the back substrate 12.

After attaching the pair of electrodes 30 to the rear substrate 12, the rear substrate 12 and the front substrate 11 are spaced apart from each other by a predetermined interval and placed in the vacuum processing apparatus in this state. Here, the vacuum processing apparatus 100 shown in FIG. 9 is used, for example.

The front substrate 11 and the rear substrate 12 which are spaced apart by a predetermined interval are first introduced into the load chamber 101. And after forming the atmosphere in the load chamber 101 in a vacuum atmosphere, it bakes and is sent to the electron beam washing chamber 102. As shown in FIG.

In the baking and electron beam cleaning chamber 102, various members are heated to the temperature of 300 degreeC, and the surface adsorption gas of each board | substrate is discharge | released. At the same time, an electron beam from an electron beam generator not shown mounted in the baking and electron beam cleaning chamber 102 is irradiated to the phosphor screen surface of the front substrate 11 and the electron emission element surface of the rear substrate 12. At this time, the electron beam is deflected by the deflection apparatus mounted outside the electron beam generator, and the phosphor screen surface and the electron emission element surface are respectively cleaned by electron beam.

The front substrate 11 and the back substrate 12 having undergone electron beam cleaning are sent to the cooling chamber 103 and cooled to a temperature of about 120 ° C., and then to the getter film deposition chamber 104. In this vapor deposition chamber 104, a barium film serving as a getter film is formed on the outer side of the phosphor layer. Since the barium film can prevent the surface from being contaminated with oxygen, carbon, or the like, the barium film can be maintained in an active state.

Next, the front substrate 11 and the rear substrate 12 are sent to the assembly chamber 105. Inside the assembly chamber 105, as shown in Figs. 66 and 67, hot plates 131 and 132 for holding and heating both substrates, and a driving mechanism for driving the lower hot plates 132 in the vertical direction. 150, a wiring 134 for energizing the sealing layer, a pair of contact electrodes 135 in contact with the pair of electrodes 30, and a holding device for holding and holding the pair of electrodes 30, respectively. 136, a drive mechanism 137 for driving the holding device 136 in the up and down and in-plane directions, and a plurality of guide rollers 138 for moving the substrate in an in-plane direction, that is, in a direction parallel to the surface of the substrate, have. The contact electrode 135 is attached to the lower hot plate 132. The wiring 134 is connected to a power supply 120 provided outside the assembly chamber 105.

The front substrate 11 and the back substrate 12 sent to the assembly chamber 105 are first mechanically positioned by the guide rollers 138 with respect to the respective hot plates 131, 132. At this time, the front substrate 11 is fixed to the hot plate 131 by a known electrostatic adsorption technique so as not to fall after being positioned on the transfer jig. The rear substrate 12 is positioned on the lower hot plate 132 and then positioned by the guide roller 138. At the same time, tongue tongue portions 44 of the pair of electrodes 30 are electrically connected in contact with corresponding contact electrodes 135, respectively.

After the mutual positions of the front substrate 11 and the rear substrate 12 are aligned, the hot plate driving mechanism 150 moves the rear substrate 12 in the direction of the front substrate 11 to press the predetermined pressure. Accordingly, the contact portion 36 of each electrode 30 is inserted between the front substrate 11 and the sealing layers 21b and 21a of the back substrate 12 so that each electrode is electrically connected to the sealing layers of both substrates at the same time. Contact.

In this state, 140 A DC current is energized in the constant current mode from the power supply 120 to the sealing layers 21a and 21b via the electrode 30. As a result, indium is heated and melted, and the front substrate 11 and the back substrate 12 are hermetically sealed. After stopping the energization, the drive mechanism 137 moves the holding device 136 to the tongue section 44 of the electrode 30 as shown in FIG. 67, and clamps the tongue section 44 through the holding device. do. Thereafter, the driving mechanism 137 moves the holding device 136 together with the electrode 30 in the outward direction of the substrate along a direction parallel to the surface of the rear substrate 12 to move each electrode 30 in the molten state. It is separated from the indium and back substrate 12. Since indium is in a molten state immediately after the energization stops, the electrode 30 can be easily detached from the sealing layer. After the electrode 30 is separated, the sealing layer 21 is kept intact, and the molten indium hardens to form the envelope 10. The envelope 10 after sealing is sent to the cooling chamber 106, cooled to room temperature, and taken out from the unloading chamber 107. The vacuum envelope 10 of FED is completed by the above process.

According to the manufacturing method and the manufacturing apparatus of the FED which concerns on 13th embodiment mentioned above, it uses baking and electron beam cleaning together in that sealing and bonding of the front board | substrate 11 and the back board | substrate 12 are performed in a vacuum atmosphere. Through this, the surface adsorption gas can be sufficiently discharged, whereby a getter film excellent in adsorption capacity can be obtained. As the indium is energized and adsorbed and bonded, it is not necessary to heat the entire front substrate and the back substrate, thereby eliminating problems such as degradation of the getter film and cracking of the substrate during the sealing process. At the same time, the sealing time can be shortened, so that a production method excellent in mass productivity can be obtained. If the electrode is separated from indium in the assembling chamber after energization, the electrode does not remain in the FED after sealing. Therefore, for example, it is possible to prevent the occurrence of a problem in that the FED is assembled into a cabinet as a monitor or the envelope is broken by an electrode. This has the advantage that the handling of the envelope after sealing becomes easy.

In the thirteenth embodiment, the back substrate 12 is introduced into the post-vacuum processing apparatus in which the pair of electrodes 30 are mounted. However, the present invention is not limited thereto, and an electrode for energization is provided in the vacuum processing apparatus and the electrode is mounted on the substrate. It may be a manufacturing method and a manufacturing apparatus which are put into a vacuum processing apparatus, without using.

As shown in FIG. 68, the FED manufacturing apparatus according to the fourteenth embodiment of the present invention drives the hot plates 131 and 132 and the lower hot plate 132 in the vertical direction to fix and hold both substrates. Drive mechanism 150, wiring 134 for energizing the sealing layer, and electrode 145, drive mechanism for driving the electrode 145 in a direction parallel to the surface of the substrate and in a direction perpendicular to the surface of the substrate 137 and a plurality of guide rollers 138 for positioning by moving the substrate in a direction parallel to the surface thereof. The energization wiring 134 is connected to the power supply 120 outside the assembly chamber. The other structure of the manufacturing apparatus is the same as that of the thirteenth embodiment described above, and the same parts are denoted by the same reference numerals and detailed description thereof will be omitted.

In the fourteenth embodiment, the front substrate 11 and the rear substrate 12 sent to the assembly chamber 105 are first mechanically positioned by the guide rollers 138 with respect to the corresponding hot plates 131, 132, respectively. do. At this time, the front substrate 11 is adsorbed to the hot plate 131 by a known electrostatic adsorption technique so as not to fall after being positioned on the conveying jig.

Subsequently, the electrode drive mechanism 137 and the hot plate drive mechanism 150 move the electrode 145 and the back substrate 12 in the direction of the front substrate 11 to press to a desired pressure. Thereby, each electrode 145 is inserted between the sealing layers 21a and 21b of both board | substrates, and each electrode is electrically contacted simultaneously with the sealing layer of both board | substrates.

In this state, a direct current of 140 A is energized in the constant current mode from the power supply 120 to the sealing layers 21a and 21b through the electrode 145. Accordingly, when the indium is heated and melted, the front substrate 11 and the back substrate 12 are hermetically sealed. After stopping the energization, the electrode drive mechanism 137 moves the electrode 145 toward the outside of the substrate to separate it from the indium in the molten state. Immediately after the energization stops, the electrode 145 can be easily separated from the indium because the indium is in a molten state. After the electrodes are separated, the molten indium hardens to form the envelope 10 by maintaining the state as it is for several minutes. The envelope 10 after sealing is sent to the cooling chamber 106, cooled to room temperature, and taken out from the unloading chamber 107.

In 14th Embodiment, another structure is the same as that of 13th Embodiment, and description of the same part is abbreviate | omitted.

According to the above configuration, an electrode 145 for energization is provided in the assembly chamber 105 and is separated from the sealing layer after energization. Therefore, as in the thirteenth embodiment, no electrode remains in the FED after sealing. When assembling the FED into the cabinet as a monitor, it is possible to prevent a problem that the electrode is disturbed or the external air is destroyed by the electrode.

In a fourteenth embodiment, the process is performed by applying two pairs and four electrodes to each other by bringing the pair of electrodes into contact with the sealing layer on the front substrate side and the sealing layer on the back substrate side, respectively, and pressing the substrates together after the electrodes are separated. It may be. The position, shape, and number of electrodes are not limited to the above embodiment.

The present invention is not limited to the above-described embodiments, but can be modified in various ways within the scope of the present invention. Although the above-mentioned some embodiment used the vacuum envelope of the structure by which the side wall is clamped between the front board | substrate and the back board | substrate, you may comprise a side wall integrally with a front board | substrate or a back board, and the side wall is a back board | substrate and a back board | substrate. The structure bonded together may surround the board | substrate from the side surface. In addition, the sealing surface sealed by the energization heating of a sealing material may be two surfaces between a front substrate and a side wall, and a back substrate and a side wall.

In the above-described embodiment, the encapsulant on the front substrate side and the encapsulant on the rear substrate side are brought into contact with each other by heating. However, the encapsulation member may be joined while being solidified after conduction heating in a non-contact state. The configuration of the phosphor screen and the configuration of the electron emitting device are not limited to the embodiment of the present invention but may be other configurations.

In addition, the sealing material is not limited to indium, The other material which has electroconductivity may be sufficient. In general, a metal can be used as a sealing material because a sudden change in resistance occurs during phase change. For example, a metal or an alloy containing at least any one of In, Sn, Pb, Ga, and Bi may be used as the sealing material.

The above-described FED includes one or two pairs of electrodes, but may be configured to include at least one electrode previously attached to the envelope, and to electrically conduct heating by attaching another required electrode to the enclosure in the sealing step. In addition, the plurality of electrodes may be arranged such that the conduction paths of the sealing layers located between the electrodes are equal in length to each other, or may be arranged at positions symmetrical with respect to the sealing layer, and are not limited to the edges of the enclosure. It may be installed in.

In the above-mentioned embodiment, although the sealing layer which consists of indium is provided in both the back substrate side and the front substrate side, the structure which seals a front substrate and a back substrate in the state in which the sealing layer was provided only in one side may be sufficient.

The outer shape of the vacuum envelope and the configuration of the supporting member are not limited to the above embodiment. A matrix type light absorbing layer and a phosphor layer may be formed, and a cross-sectional columnar supporting member may be positioned and sealed with respect to the light absorbing layer. The electron emitting device may be a pn type cold cathode device, a surface conduction electron emitting device, or the like. In the above embodiment, the step of joining the substrate in a vacuum atmosphere has been described, but it can also be carried out in other atmosphere environments.

The present invention is not limited to the FED, but can also be applied to other image display devices such as SED and PDP, or to an image display device in which the inside of the enclosure maintains a high vacuum.

As described above, according to the present invention, it is possible to provide an image display apparatus, a manufacturing method and a manufacturing apparatus of the image display apparatus, which can perform the sealing operation stably and quickly, and have high reliability and good image display.

Claims (77)

An envelope having a front substrate and a rear substrate disposed opposite to the front substrate, the outer periphery of the front substrate and the rear substrate being sealed to each other by a sealing layer containing a conductive sealing material; And an electrode member mounted to the envelope in electrical contact with the sealing layer, the electrode member for energizing the sealing layer. The said electrode member is formed by bending a metal plate, Comprising: The 1st board part and 2nd board part which oppose at intervals, The said conducting part which connects these 1st and 2nd board parts, The said 1st board | substrate is provided. And a peripheral portion of the front substrate or the rear substrate sandwiched between the second plate portion and mounted on the envelope. The image display device according to claim 2, wherein the first plate portion includes a contact portion in electrical contact with the sealing layer. 3. The envelope of claim 2, wherein the envelope includes a frame-shaped sidewall bonded between the rear substrate and a peripheral portion of the rear substrate, and at least one side of the rear substrate and the front substrate is sealed to the sidewall through the sealing layer. And the electrode member is mounted to an enclosure by sandwiching the at least one peripheral portion and the side wall of the rear substrate and the front substrate between the first and second plate portions. According to claim 1, The electrode member has a contact portion in electrical contact with the sealing layer, a body portion extending from the contact portion toward the outside of the envelope, a conductive portion exposed to the outside of the envelope, The body portion has an outflow restriction portion located higher than the contact portion along the vertical direction. According to claim 1, wherein the electrode member has a contact portion in electrical contact with the sealing layer, and a body portion and a drain portion extending from the contact portion toward the outside of the envelope, the body portion than the contact portion in the vertical direction An image display device having an outflow restricting portion that is positioned high, and wherein the drain portion is positioned lower than the contact portion along the vertical direction. The image display device according to claim 5 or 6, wherein the electrode member has a conductive portion exposed or protruded to the outside of the envelope. 7. The image display apparatus according to claim 5 or 6, wherein the electrode member has a mounting portion that sandwiches a peripheral portion of the front substrate or the rear substrate, and is mounted on the envelope. The image display device according to claim 5 or 6, wherein the electrode member is formed by bending a metal plate. The image display device according to claim 5 or 6, wherein the contact portion of the electrode member has a horizontal portion having an extension length of 2 mm or more in the horizontal direction. The image display apparatus according to claim 6, wherein the drain portion of the electrode member has a width narrower than the width of the body portion. 7. The image display device according to claim 5 or 6, wherein a conductive material is filled in the contact portion of the electrode member and a region near the electrode member. 7. An image display apparatus according to claim 6, wherein a conductive material is filled in the contact portion of the electrode member, its vicinity, and the drain portion and its vicinity. According to claim 1, The electrode member has a contact portion in electrical contact with the sealing layer, and a body portion extending from the contact portion toward the outside of the envelope, at least a portion of the body portion is smaller than the cross-sectional area of the contact portion Image display device having a. The image display device according to claim 14, wherein the contact portion of the electrode member is positioned higher than the body portion along the vertical direction. The image display device according to claim 1, wherein the electrode members each have a plurality of contact portions arranged at intervals through which the sealing material can flow out while being electrically in contact with the sealing layer. The image display device according to claim 16, wherein the electrode member has a plurality of contact portions which respectively contact the sealing layer at both sides of one corner portion of the envelope. 17. The image display device according to claim 16, wherein the electrode member has a plurality of contact portions each contacting the sealing material at one side of one corner portion of the envelope. The image display device according to claim 16, wherein the electrode member is formed in a Y shape having two contact portions. The image display apparatus according to claim 1, wherein the sealing layer is formed in a substantially rectangular frame shape, and a plurality of electrode members are provided symmetrically on the sealing layer, and are electrically connected to the sealing layer, respectively. The sealing layer of claim 1, wherein the sealing layer has a substantially rectangular frame shape, and the electrode member is mounted on the rear substrate and electrically connected to the sealing layer, and the sealing layer is mounted on the front substrate. And a second electrode electrically connected to the second display device. The image display device of claim 1, wherein the sealing material includes at least one of In, Sn, Pb, Ga, and Bi. The image display device according to claim 1, wherein the electrode member is formed of a single element or an alloy containing at least one of Cu, Al, Fe, Ni, Co, Be, and Cr. The image display device according to claim 1, further comprising a phosphor layer provided on an inner surface of the front substrate, and a plurality of electron emission elements provided on the back substrate to excite the phosphor layer, respectively. According to claim 1, wherein the envelope has a frame-shaped side wall bonded between the periphery of the front substrate and the rear substrate, the sealing layer is provided between at least one side of the front substrate and the rear substrate and the side wall. Image display device. An envelope having a front substrate and a back substrate which are disposed to face each other and whose periphery is joined by an electrically conductive sealing material, An image display device comprising a plurality of electrode members each of which is at least partially covered by a conductive material layer and each of which is provided to be in electrical contact with the encapsulant through the conductive material layer. 27. The image display device according to claim 26, wherein the envelope has a frame-shaped sidewall bonded between the periphery of the front substrate and the rear substrate, and the encapsulant is provided between at least one side of the front substrate and the rear substrate and the side wall. . 27. The image display device according to claim 26, wherein the sealing material is provided in a frame shape along the periphery of the envelope, and the plurality of electrode members are provided at at least two corner portions of the envelope. 27. The image display device according to claim 26, wherein each electrode member is formed of a single element or an alloy containing at least one of Cu, Al, Fe, Ni, Co, Be, and Cr. 27. The image display device according to claim 26, wherein the sealing material comprises any one of In, Sn, Pb, Ga, and Bi. 27. The image display device of claim 26, wherein the conductive material layer comprises any one of In, Sn, Pb, Ga, and Bi. A sealing layer containing opposingly disposed front and rear substrates and an encapsulation material having a conductive material disposed along an inner periphery of at least one side of the front and rear substrates, wherein the encapsulation layer is a peripheral portion of the front and rear substrates. And a plurality of pixels provided in the envelope, each of the sealing layers having a plurality of recesses opened toward the outside of the envelope. The image display apparatus according to claim 32, wherein the plurality of recesses are located at two or four corners of the envelope. A sealing layer containing opposingly disposed front and rear substrates and an encapsulation material having a conductive material disposed along an inner periphery of at least one side of the front and rear substrates, wherein the encapsulation layer is a peripheral portion of the front and rear substrates. Is provided with an outer envelope bonded to each other, and a plurality of pixels provided in the outer envelope, And the envelope includes a contact portion bonded to the sealing layer and has a plurality of conductor pieces (mainly difficult to differentiate from electrodes) positioned at the periphery of the envelope. The image display device according to claim 34, wherein the conductor piece is disposed at a corner of the envelope. It is a manufacturing method of the image display apparatus provided with the envelope which has the front substrate and the back substrate which are mutually arrange | positioned and the peripheral part joined together, Forming a sealing layer by placing a conductive sealing material having a conductive portion on at least one peripheral portion of the front substrate and the rear substrate, Mounting an electrode member on the at least one side of the front substrate and the rear substrate on which the sealing layer is formed, and electrically connecting to the sealing layer, And energizing the sealing layer through the electrode member in a state where the front substrate and the rear substrate are disposed to face each other, and heat sealing the sealing layer to bond the peripheral portions of the front substrate and the back substrate to each other. It is a manufacturing method of the image display apparatus provided with the envelope which has the front substrate and the back substrate which are mutually arrange | positioned and the peripheral part joined together, A conductive layer is disposed on the periphery of the front substrate and the rear substrate to form a sealing layer, Mounting an electrode member on the at least one side of the front substrate and the back substrate and electrically connecting the sealing layer formed on the at least one side; The front substrate and the rear substrate are disposed to face each other, the electrode member is electrically contacted with a sealing layer formed on the other side of the front substrate and the rear substrate, and then energized to the sealing layer through the electrode member to heat-melt the sealing layer. To join the peripheral portions of the front substrate and the back substrate to each other. It is a manufacturing method of the image display apparatus provided with the envelope which has the front substrate and the back substrate which are mutually arrange | positioned and the peripheral part joined together, Forming a sealing layer by placing a conductive sealing material having a conductive portion on at least one peripheral portion of the front substrate and the rear substrate, An electrode member having a contact portion, a body portion having an outflow restriction portion extending from the contact portion and positioned higher than the contact portion along the vertical direction, and having a conducting portion, The electrode member is mounted on the at least one side of the front substrate and the rear substrate on which the sealing layer is formed in a state in which the body portion extends outward from the sealing layer and the conductive portion is exposed or protruded to the outside, and the contact portion is sealed. Electrical contact with the layer, A method for manufacturing an image display apparatus, wherein the front substrate and the rear substrate are opposed to each other and energized through the electrode member to the sealing layer to heat-melt the sealing layer to bond the peripheral portions of the front substrate and the back substrate to each other. It is a manufacturing method of the image display apparatus provided with the outer atmosphere which has the front substrate and the back substrate which are arrange | positioned opposing and joined together with the peripheral part, Forming a sealing layer by disposing a sealing material having conductivity at a peripheral portion of at least one side of the front substrate and the rear substrate, An electrode member having a contact portion, a body portion having an outflow restriction portion extending from the contact portion and positioned higher than the contact portion in the vertical direction, and a drain portion extending from the contact portion and positioned lower than the contact portion in the vertical direction. Ready, The electrode member is mounted on the at least one side of the front substrate or the rear substrate on which the sealing layer is formed, with the body portion and the drain portion extending outward from the sealing layer and the conductive portion exposed or protruding to the outside. Is electrically contacted with the sealing layer, In the state where the front substrate and the rear substrate are disposed to face each other, the conductive layer is energized through the electrode member to heat and seal the sealing layer, and the front substrate and the rear substrate are pressed in a direction close to each other, and the front substrate and the rear substrate are pressed. A method of manufacturing an image display device, wherein a peripheral portion of a substrate is bonded through the molten sealing material and the melted excess sealing material is flowed out from the drain portion of the electrode member to the outside. It is a manufacturing method of the image display apparatus provided with the envelope which has the front substrate and the back substrate which are mutually arrange | positioned and the peripheral part joined together, A conductive layer is disposed between the periphery of the front substrate and the rear substrate to form a sealing layer, Preparing an electrode member having a plurality of contact portions listed at intervals in which the sealing material can flow out, A plurality of contact portions of the electrode member are electrically contacted with the sealing layer, respectively In the state in which the front substrate and the rear substrate are pressed to each other in a direction close to each other, the sealing member is heated and melted by energizing the sealing layer through the electrode member to bond the periphery of the front substrate and the rear substrate through the melted sealing member. A method of manufacturing an image display apparatus, wherein the surplus sealing material melted and flowed out from the gap between the contact portions of the electrode member to the outside. It is a manufacturing method of the image display apparatus provided with the envelope which has the front substrate and the back substrate which are mutually arrange | positioned and the peripheral part joined together, A conductive sealing material is disposed between the peripheral portion of the front substrate and the rear substrate to form a sealing layer, A plurality of electrode members each having at least a part covered with a conductive material layer are prepared, The electrode member is electrically contacted with the sealing layer through the conductive material layer, A method of manufacturing an image display apparatus by energizing the sealing layer through the electrode member to melt the sealing material to bond the peripheral portions of the front substrate and the rear substrate to each other. The manufacturing method of the image display apparatus of Claim 41 which supplies a conductive material to the said electrode member, applying an ultrasonic wave, and forms the said conductive material layer. 42. The method according to any one of claims 36 to 41, wherein a frame-shaped side wall is disposed between the periphery of the front substrate and the rear substrate, and the sealing is performed between at least one side of the front substrate and the rear substrate and the side wall. A layer is provided, and the sealing layer is energized through the electrode member to melt the sealing material. The manufacturing method of the image display apparatus in any one of Claims 36-41 using the metal containing at least any one of In, Sn, Pb, Ga, Bi as said sealing material. The manufacturing method of the image display apparatus in any one of Claims 36-41 which sets the temperature of the said front board | substrate and back board | substrate immediately before energizing with the said sealing material to be lower than melting | fusing point of the said sealing material. The manufacturing method of the image display apparatus as described in any one of Claims 36-41 which energizes a said sealing layer in the state which kept the said enclosure in a vacuum atmosphere. 42. The method according to any one of claims 36 to 41, wherein the front substrate and the back substrate are heated and degassed in a vacuum atmosphere, and then cooled to a temperature lower than the melting point of the encapsulant in a vacuum atmosphere. Energizing the sealing layer to heat-melt only the sealing material, The manufacturing method of the image display apparatus which stops the electricity supply to the said sealing layer, conducts the heat of the said sealing layer to the said front substrate and the back substrate, and cools | solidifies a sealing layer. A manufacturing method of an image display apparatus including an envelope having a front substrate and a back substrate which are disposed to face each other and are joined to each other, and a plurality of pixels provided in the envelope. Forming a sealing layer by disposing a sealing material having conductivity at at least one peripheral portion of the front substrate and the rear substrate, The front substrate and the rear substrate are disposed to face each other with the encapsulant therebetween, At least one side of the opposing front substrate and the rear substrate is pressed in a direction in which the front substrate and the rear substrate are close to each other, and at least a portion of the sealing material is sandwiched in contact with the peripheral portion of the front substrate and the rear substrate. and, A method of manufacturing an image display apparatus in which the sealing material is heated and melted by energizing the sealing layer through an electrode member in the pressed state. 49. The method of claim 48, wherein a conductive sealing material is disposed on the periphery of the front substrate and the periphery of the rear substrate to form a sealing layer, and at least a portion of the sealing layer is energized with the sealing layers in contact with each other. The manufacturing method of an image display apparatus. A manufacturing method of an image display apparatus including an envelope having a front substrate and a back substrate which are disposed to face each other and are joined to each other, and a plurality of pixels provided in the envelope. A conductive sealing material is disposed on at least one of a peripheral portion of the at least one substrate and the sidewall of the front substrate and the back substrate, The front substrate and the rear substrate are disposed to face each other with the encapsulant and the sidewall interposed therebetween, At least one side of the opposing front substrate and the rear substrate is pressed in a direction in which the front substrate and the rear substrate are close to each other, at least a portion of the sealing material between at least one peripheral portion of the front substrate and the rear substrate and the side wall Sandwiched in contact with, A method of manufacturing an image display apparatus in which the sealing material is heated and melted by energizing the sealing material through an electrode member in the pressed state. 51. The method of claim 50, wherein a conductive sealing material is disposed on the periphery of the at least one of the front substrate and the rear substrate and the side wall to form a sealing layer, and at least a portion of the sealing layer is in contact with each other. The manufacturing method of the image display apparatus which energizes with a sealing material. The manufacturing method of the image display apparatus of Claim 48 or 51 which inserts the said electrode member between the said sealing layers, and energizes with a sealing material through this electrode member. A manufacturing method of an image display apparatus including an envelope having a front substrate and a back substrate which are disposed to face each other and are joined to each other, and a plurality of pixels provided in the envelope. A conductive layer is disposed on the periphery of the front substrate and the rear substrate, respectively to form a sealing layer, The front substrate and the rear substrate are disposed to face each other with the sealing layer therebetween; At least a portion of the sealing layers provided on the opposing front substrate and the rear substrate are welded to each other, The manufacturing method of the image display apparatus which makes an electrode member contact a said welding part, and energizes the sealing layers of both sides through this electrode member, and heat-melts the said sealing material. It is a manufacturing method of the image display apparatus provided with the outer atmosphere which has the front substrate and the back substrate which are arrange | positioned opposing and joined together with the peripheral part, Forming a sealing layer by placing a conductive sealing material having a conductive portion on at least one peripheral portion of the front substrate and the rear substrate, Preparing an electrode member including a mounting portion mountable on at least one side of the front substrate and the rear substrate, and a contact portion contactable with the sealing layer; Mounting the electrode on the at least one side of the front substrate and the rear substrate with the contact portion spaced apart from the sealing layer, The front substrate and the rear substrate are disposed to face each other while maintaining a gap between the contact portion and the sealing layer; Pressing the opposingly disposed front substrate and the rear substrate in a direction close to each other, contacting the front substrate and the rear substrate through the contact layer and electrically contacting the contact portion of the electrode member with the sealing layer; And energizing the sealing layer through the electrode member in the pressurized state to heat-melt the sealing layer to bond the peripheral portions of the front substrate and the back substrate to each other. It is a manufacturing method of the image display apparatus provided with the envelope which has the front substrate and the back substrate which are mutually arrange | positioned and the peripheral part joined together, Forming a sealing layer by placing a conductive sealing material having a conductive portion on at least one peripheral portion of the front substrate and the rear substrate, Preparing an electrode member including a mounting portion mountable on at least one side of the front substrate and the rear substrate, and a contact portion contactable with the sealing layer; Mounting the electrode member on the front substrate and the rear substrate with the contact portion spaced apart from the sealing layer, The front substrate and the rear substrate are disposed to face each other while maintaining a gap between the contact portion and the sealing layer; The opposing front substrate and the rear substrate are moved in a direction proximate to each other, and the contact portion of the electrode member mounted on the front substrate is electrically contacted with the sealing layer of the rear substrate, and the electrode member mounted on the rear substrate. The contact portion of the electrical contact with the sealing layer of the front substrate, While the electrode member is in electrical contact with the sealing layer, the electrode is energized to the sealing layer through the electrode member to heat-melt the sealing layer, and the opposingly disposed front and rear substrates are pressed in a direction proximate to each other. And a peripheral portion of the front substrate and the back substrate to be bonded to each other. It is a manufacturing method of the image display apparatus provided with the envelope which has the front substrate and the back substrate which are mutually arrange | positioned and the peripheral part joined together, Forming a sealing layer by placing a conductive sealing material having a conductive portion on at least one peripheral portion of the front substrate and the rear substrate, Preparing an electrode member including a mounting portion mountable on at least one side of the front substrate and the rear substrate, and a contact portion in contact with the sealing layer; Mounting the electrode member on one side of the front substrate or the rear substrate with the contact portion spaced apart from the sealing layer, The front substrate and the rear substrate are disposed to face each other while maintaining a gap between the contact portion and the sealing layer; The opposing front and rear substrates are moved in a direction close to each other, Electrically contacting the contact portion of the electrode member with the sealing layer, While the electrode member is in electrical contact with the sealing layer, the electrode is energized to the sealing layer through the electrode member to heat-melt the sealing layer, and the opposingly disposed front and rear substrates are pressed in a direction proximate to each other. And a peripheral portion of the front substrate and the back substrate to be bonded to each other. 55. The image display apparatus according to claim 54, wherein the front substrate and the rear substrate are heated to release adsorption gas from the front substrate and the rear substrate, and then the opposingly disposed front substrate and the rear substrate are pressed in a direction proximate to each other. Way. 55. The image display apparatus according to claim 54, wherein after irradiating an electron beam to at least one side of the front substrate and the rear substrate to clean the electron beam, the opposing front substrate and the rear substrate are pressed in a direction proximate to each other. Manufacturing method. 58. The manufacturing method of an image display apparatus according to claim 57, wherein said adsorption gas is discharged, a getter film is formed on an inner surface of said front substrate, and said opposingly disposed front substrate and back substrate are pressed in a direction close to each other. 55. The manufacturing method of an image display apparatus according to claim 54, wherein an alloy containing In or In is applied in advance to a contact portion of the electrode member. 55. The manufacturing method of an image display apparatus according to claim 54, wherein a mounting portion of the electrode member has a clip-like clamping portion capable of clamping a peripheral portion of at least one of the front substrate and the back substrate. 55. The method of claim 54, wherein the electrode member has a body and a conductive portion extending from the mounting portion, and the contact portion extends from the body. The manufacturing method of the image display apparatus of any one of Claims 48-62 whose said sealing material is a metal containing any one of In, Sn, Pb, Ga, and Bi. The manufacturing method of the image display apparatus of any one of Claims 48-62 which energizes and heats the said sealing layer in a vacuum atmosphere. An envelope having a front substrate and a back substrate which are disposed to face each other and are joined to each other through a sealing layer, and a manufacturing method of an image display device including a plurality of pixels provided in the envelope. Forming a sealing layer by disposing a sealing material having conductivity along at least one inner surface peripheral edge of the front substrate and the rear substrate; In the state in which the front substrate and the rear substrate are disposed to face each other, the current is supplied to the sealing layer through an electrode member electrically contacting the sealing layer, and the sealing layer is heated and melted to melt the peripheral portions of the front substrate and the rear substrate. Bonded with sealing material, The manufacturing method of the image display apparatus which removes the said electrode member after bonding. The manufacturing method of the image display apparatus of Claim 65 which cuts the interface of the said electrode member and a sealing layer by ultrasonic cutting, and removes the said electrode member. 67. The method of claim 66, wherein an ultrasonic wave is applied to the electrode member to ultrasonically cut the interface between the electrode member and the sealing layer to remove the electrode member. 66. The manufacturing method of an image display apparatus according to claim 65, wherein, after bonding the front substrate and the back substrate, the electrode member is removed in a state where the sealing layer is heated and softened or melted at the periphery of the electrode member. An envelope having a front substrate and a back substrate which are disposed to face each other and are joined to each other through a sealing layer, and a manufacturing method of an image display device including a plurality of pixels provided in the envelope. Forming a sealing layer by disposing a sealing material having conductivity along at least one inner surface peripheral edge of the front substrate and the rear substrate; The contact portion of the electrode member is brought into electrical contact with the sealing layer, In the state in which the front substrate and the rear substrate are disposed facing each other, it is energized to the sealing layer through the electrode member to heat the sealing layer to join the peripheral portion of the front substrate and the rear substrate with the molten sealing material, And after the bonding, the vicinity of the contact portion in contact with the sealing layer of the electrode member is cut to remove a portion other than the vicinity of the contact portion of the electrode member. 70. The method of claim 69, wherein the electrode member has a mounting portion mounted to at least one side of the front substrate and the rear substrate, a body portion extending from the mounting portion to the contact portion, And after the bonding, the body portion is cut in the vicinity of the contact portion, and the body portion and the mounting portion are removed from the envelope. An envelope having a front substrate and a back substrate which are disposed to face each other and are joined to each other through a sealing layer, and a manufacturing method of an image display device including a plurality of pixels provided in the envelope. A conductive sealing material is disposed along at least one inner peripheral edge of the front substrate and the rear substrate. In the state in which the front substrate and the rear substrate are disposed facing each other, the sealing material is heated and melted by energizing the sealing material through an electrode member electrically contacting the sealing material, After the energization ends, the electrode member is removed and separated from the sealing member in a state in which the sealing member is molten, And a peripheral portion of the front substrate and the back substrate to be bonded with the molten sealing material. The manufacturing method of the image display apparatus of Claim 71 which makes the said electrode member contact with the said sealing material just before the said electricity supply, and removes and removes it from the said sealing material after the said electricity supply end. An envelope having a front substrate and a back substrate which are disposed to face each other and are joined to each other through a sealing layer, and a manufacturing method of an image display device including a plurality of pixels provided in the envelope. Arranging a frame-like member having conductivity and an encapsulant that is melted by heating along at least one inner surface peripheral edge of the front substrate and the rear substrate, In the state in which the front substrate and the rear substrate are disposed opposite to each other through the electrode member electrically in contact with the frame member to melt the sealing material through the heat generated by the frame member, After the energization ends, the electrode member is removed and separated from the frame member in the state in which the sealing material is molten, And a peripheral portion of the front substrate and the back substrate to be bonded with the molten sealing material. 74. The manufacturing method of an image display apparatus according to claim 73, wherein said electrode member is brought into contact with said frame member immediately before said energization, and is removed from said frame member after said energization ends. The manufacturing method of the image display apparatus of Claim 71 or 73 whose said sealing material is a metal containing at least any one of In, Sn, Pb, Ga, and Bi. An enclosure having a front substrate and a back substrate which are disposed to face each other and have peripheral portions bonded to each other, a sealing layer comprising a conductive material disposed along an inner peripheral edge of at least one of the front substrate and the rear substrate, and the envelope It is a manufacturing apparatus of the image display apparatus provided with the some pixel provided in the inside, An electrode member in electrical contact with the sealing layer, A power supply for supplying current through the electrode member; A holding device for holding and fixing the electrode member; And a drive mechanism for moving the holding device in an inner surface direction of the front substrate or the back substrate. An enclosure having a front substrate and a back substrate which are disposed to face each other and have peripheral portions bonded to each other, a sealing layer comprising a conductive material disposed along an inner peripheral edge of at least one of the front substrate and the rear substrate, and the envelope It is a manufacturing apparatus of the image display apparatus provided with the some pixel provided in the inside, A plurality of electrode members provided to be in electrical contact with the sealing member, A power supply for supplying current to the sealing layer through the electrode member; And a drive mechanism for driving the electrode member in at least one inner surface direction of the front substrate and the rear substrate.