JP2005302579A - Manufacturing method of image display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an image display device, capable of speedily and stably carrying out sealing work. <P>SOLUTION: In this manufacturing method to realize sealing treatment by ohmic-heating a single-sided substrate, for instance, a sealing material 21a provided on a back substrate 12 is performed for ohmic-heating, a front substrate 11 is brought close to the back substrate with the sealing material 21a fused by this ohmic-heating, and the substrates are superimposed each other by matching their sealing faces. Thereby, a sealing material 21b provided on the front substrate 11 is fused by receiving the fusion heat of the sealing material 21a, and the sealing material 21a and the sealing material 21b are mutually fused to form an integrated sealing layer 21. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a manufacturing method for manufacturing a flat-type image display device including a pair of substrates that are arranged to face each other and whose peripheral portions are sealed to each other.

  2. Description of the Related Art In recent years, various image display devices have been developed as next-generation lightweight and thin display devices that replace cathode ray tubes (hereinafter referred to as CRTs). Such image display devices include a liquid crystal display (hereinafter referred to as LCD) that controls the intensity of light using the orientation of liquid crystal, and a plasma display panel (hereinafter referred to as PDP) that emits phosphors by ultraviolet rays of plasma discharge. A field emission display (hereinafter referred to as FED) that emits a phosphor by an electron beam of a field emission electron emission device; a surface conduction electron emission display (hereinafter referred to as SED) that emits a phosphor by an electron beam of a surface conduction electron emission device; Etc.).

  Among these various display devices, for example, FEDs and SEDs generally have a front substrate and a rear substrate arranged to face each other with a predetermined gap, and these substrates are connected to each other through a rectangular frame-shaped side wall. Are joined together to form a vacuum envelope. A phosphor screen is formed on the inner surface of the front substrate, and a number of electron-emitting devices are provided on the inner surface of the rear substrate as electron emission sources that excite the phosphor to emit light.

  Further, in order to support an atmospheric pressure load applied to the back substrate and the front substrate, a plurality of support members are disposed between these substrates. The potential on the back substrate side is almost the ground potential, and an anode voltage is applied to the phosphor screen. The red, green, and blue phosphors that make up the phosphor screen are irradiated with the electron beams emitted from the electron-emitting devices, and the phosphors emit light to display an image.

  With such FEDs and SEDs, the thickness of the display device can be reduced to a few millimeters, and it is lighter and thinner than CRTs currently used as television and computer displays. can do.

  For example, in the FED as described above, various manufacturing methods have been studied in order to join the front substrate and the rear substrate constituting the envelope. In general, a sintered material such as frit glass is filled between two substrates and side walls, heated and sintered in a furnace, and the substrate and side walls are bonded to form an envelope. As an example of a basic procedure, a material in which a side wall is welded to a rear substrate is prepared in advance, and this and the front substrate are further welded.

However, unnecessary gas is generated when the frit glass is sintered. This gas remains inside the sealed envelope after welding and becomes an obstacle when the inside of the envelope is exhausted to a high vacuum later. Therefore, a low melting point metal sealing material such as indium that melts at a relatively low temperature is filled between the front substrate and the side wall, and the conductive sealing material itself is heated by the Joule heat when the conductive sealing material is energized. A method of dissolving and bonding substrates (hereinafter referred to as energization heating) has been studied.
JP 2002-319346 A

  In the energization heating described above, in the pressure-heating mode in which the sealing materials provided on the respective substrates are heated and melted at the same time in a state where the substrates are pressurized with each other, A heating-pressurizing mode in which the substrates are pressurized can be considered.

  However, in the conventional technique, in the pressurization-heating mode, the sealing material such as indium provided on each substrate is pressurized before energization. There is a problem that the sealing material heated and melted from the outside protrudes and stable sealing cannot be expected. In the case of the heating-pressing mode, the sealing materials on both the substrates are in a heated and melted state in advance, so that the heat treatment and the cooling treatment after the sealing require a lot of time and the workability is poor. there were. Furthermore, at this time, it is possible to shorten the time required for melting the sealing material by increasing the current value at the time of energization heating. In this case, a large energization current is required, and There is a problem that the thermal strain stress increases to cause deformation or breakage of the substrate.

  The present invention has been made in view of the above points, and an object thereof is to efficiently and quickly and stably perform sealing work with a sealing material using a conductive metal material while maintaining the entire substrate at a low temperature. An object of the present invention is to provide a method of manufacturing an image display device that can improve the yield.

  In order to achieve the above object, the present invention provides a method for manufacturing an image display device in which an envelope is formed by sealing sealing portions provided on opposing surfaces of a pair of substrates arranged opposite to each other. Among the substrates, heating a sealing portion provided on one substrate, and overlapping the sealing portion provided on the other substrate to seal the sealing portion of each substrate. Features. As a result, the sealing operation can be performed efficiently and stably in a short time while maintaining the entire substrate at a low temperature.

  In order to achieve the above object, the present invention provides a method for manufacturing an image display device in which an envelope is formed by sealing sealing portions provided on opposing surfaces of a pair of substrates arranged opposite to each other. Among the substrates, the sealing portion provided on one of the substrates is energized and heated, and the energized and heated sealing portion is overlapped with the sealing portion provided on the other substrate to form the sealing portion of each substrate. It is characterized by sealing. As a result, the sealing operation can be performed efficiently and stably in a short time while maintaining the entire substrate at a low temperature.

  According to the present invention, the sealing process by heating the one-side substrate enables the sealing operation to be performed efficiently and stably in a short time while maintaining the entire substrate at a low temperature, thereby providing high reliability and display quality. It is possible to provide a method for manufacturing an image display device capable of manufacturing a high image display device.

  Embodiments in which the method for manufacturing an image display device according to the present invention is applied to the manufacture of an FED will be described in detail below with reference to the drawings. Here, the embodiment will be described by taking a sealing process by energization heating of one side substrate as an example.

  As shown in FIGS. 1 to 4, the FED includes a front substrate 11 and a rear substrate 12 each made of a rectangular glass plate, and these substrates are arranged to face each other with a gap of 1 to 2 mm. The back substrate 12 is formed to have a size larger than that of the front substrate 11. The front substrate 11 and the back substrate 12 constitute a flat rectangular vacuum envelope 10 whose peripheral portions are joined to each other via a rectangular frame-shaped side wall 18 and the inside is maintained in a vacuum state. .

  A plurality of plate-like support members 14 are provided inside the vacuum envelope 10 in order to support an atmospheric pressure load applied to the front substrate 11 and the rear substrate 12. These support members 14 extend in a direction parallel to one side of the vacuum envelope 10 and are arranged at a predetermined interval along a direction orthogonal to the one side. The support member 14 is not limited to a plate shape, and a columnar member may be used.

  A phosphor screen 16 that functions as an image display surface is formed on the inner surface of the front substrate 11. The phosphor screen 16 is configured by arranging red, green, and blue phosphor layers R, G, and B, and a black light absorbing layer 20 positioned between these phosphor layers. The phosphor layers R, G, and B extend in a direction parallel to the one side of the vacuum envelope 10 and are arranged at a predetermined interval along a direction orthogonal to the one side. On the phosphor screen 16, for example, a metal back 17 made of aluminum and a getter film 27 made of barium are sequentially stacked.

  On the inner surface of the back substrate 12, as shown in FIG. 3, a large number of electron-emitting devices 22 that emit electron beams are provided as electron-emitting sources that excite the phosphor layer of the phosphor screen 16. These electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. More specifically, a conductive cathode layer 24 is formed on the inner surface of the back substrate 12, and a silicon dioxide film 26 having a large number of cavities 25 is formed on the conductive cathode layer. On the silicon dioxide film 26, a gate electrode 28 made of molybdenum, niobium or the like is formed. A cone-shaped electron-emitting device 22 made of molybdenum or the like is provided in each cavity 25 on the inner surface of the back substrate 12. Further, on the inner surface of the back substrate 12, a large number of wirings 23 for supplying a potential to the electron-emitting devices 22 are provided in a matrix shape, and the end portions are drawn out to the peripheral edge portion of the vacuum envelope 10.

  In the FED configured as described above, a video signal is input to the electron-emitting device 22 and the gate electrode 28 formed in a simple matrix system. When the electron-emitting device 22 is used as a reference, a gate voltage of +100 V is applied when the luminance is highest. Further, +10 kV is applied to the phosphor screen 16. Thereby, an electron beam is emitted from the electron emitter 22. The magnitude of the electron beam emitted from the electron-emitting device 22 is modulated by the voltage of the gate electrode 28, and this electron beam excites the phosphor layer of the phosphor screen 16 to emit light, thereby displaying an image. .

  Thus, since a high voltage is applied to the phosphor screen 16, a high strain point glass is used as the plate glass for the front substrate 11, the back substrate 12, the side wall 18, and the support member 14. As will be described later, the back substrate 12 and the side wall 18 are sealed with a low melting point glass 19 such as frit glass. Further, the front substrate 11 and the side wall 18 of the rear substrate 12 are sealed with a sealing layer 21 containing indium (In) as a conductive low melting point sealing material. The sealing process (sealing process by energization heating of the one-side substrate) in the embodiment of the present invention using the sealing layer 21 will be described later.

Next, the manufacturing method of FED which has the said structure is demonstrated in detail.
First, the phosphor screen 16 is formed on the plate glass to be the front substrate 11. In this method, a plate glass having the same size as the front substrate 11 is prepared, and a phosphor stripe pattern is formed on the plate glass by a plotter machine. The plate glass on which the phosphor stripe pattern is formed and the plate glass for the front substrate are placed on a positioning jig and set on an exposure table. In this state, the phosphor screen is formed on the glass plate which becomes the front substrate 11 by exposing and developing. Thereafter, a metal back 17 is formed on the phosphor screen 16.

  Subsequently, the electron-emitting device 22 is formed on the plate glass for the back substrate 12. In this method, a matrix-like conductive cathode layer 24 is formed on a plate glass, and an insulating film of a silicon dioxide film is formed on the cathode layer by, for example, a thermal oxidation method, a CVD method or a sputtering method. Thereafter, a metal film for forming a gate electrode such as molybdenum or niobium is formed on the insulating film by, for example, sputtering or electron beam evaporation. Next, a resist pattern having a shape corresponding to the gate electrode to be formed is formed on the metal film by lithography. Using this resist pattern as a mask, the metal film is etched by wet etching or dry etching to form the gate electrode 28.

  Thereafter, the insulating film is etched by wet etching or dry etching using the resist pattern and the gate electrode 28 as a mask to form the cavity 25. Then, after removing the resist pattern, a peeling layer made of, for example, aluminum or nickel is formed on the gate electrode 28 by performing electron beam evaporation from a direction inclined by a predetermined angle with respect to the surface of the back substrate 12. Further, for example, molybdenum is deposited by electron beam evaporation as a material for forming the cathode from a direction perpendicular to the surface of the back substrate 12. As a result, the electron-emitting device 22 is formed inside the cavity 25. Next, the release layer is removed together with the metal film formed thereon by a lift-off method.

  Subsequently, the side wall 18 and the support member 14 are sealed on the inner surface of the back substrate 12 by the low melting point glass 19 in the atmosphere. Thereafter, a base layer 30a is formed over the entire periphery of the sidewall 18, and indium, for example, is filled as a sealing material to a predetermined width and thickness as required by a sealing method described later on the base layer. 21 is formed. Similarly, a base layer 30b is formed on the sealing surface facing the side wall of the front substrate 11, and, for example, indium is used as a sealing material on the base layer by a sealing method to be described later, with a predetermined width and The sealing layer 21 is formed by filling the thickness.

  As the metal sealing material, it is desirable to use a low melting point metal material having a melting point of about 350 ° C. or less and excellent adhesion and bondability. Indium (In) used in the present embodiment has not only a low melting point of 156.7 ° C., but also has excellent characteristics such as low vapor pressure and no brittleness even at low temperatures. Further, the base layers 31a and 31b are made of a material having good wettability and airtightness with respect to the metal sealing material, that is, a material having high affinity with the metal sealing material.

  Next, the back substrate 12 and the front substrate 11 to which the side walls 18 are sealed are arranged to face each other with a predetermined distance therebetween, and in this state, the substrate is put into a vacuum processing apparatus. Here, for example, a vacuum processing apparatus 100 as shown in FIG. 5 is used.

  The vacuum processing apparatus 100 includes a load chamber 101, baking, an electron beam cleaning chamber 102, a cooling chamber 103, a getter film deposition chamber 104, an assembly chamber 105, a cooling chamber 106, and an unload chamber 107 arranged side by side. ing. The assembly chamber 105 is provided with a power supply device 120 that outputs a DC power source for heating and melting the sealing materials (indium) 21a and 21b forming the sealing layer. Each chamber of the vacuum processing apparatus 100 is configured as a processing chamber capable of vacuum processing, and all the chambers are evacuated when the FED is manufactured. These processing chambers are connected by a gate valve or the like (not shown).

  First, the front substrate 11 and the rear substrate 12 that are opposed to each other with a predetermined distance are put into the load chamber 101. Then, after the atmosphere in the load chamber 101 is changed to a vacuum atmosphere, it is sent to the baking and electron beam cleaning chamber 102.

  In the baking and electron beam cleaning chamber 102, various members are heated to a temperature of 350 to 400 ° C. to release the surface adsorption gas of each substrate. At the same time, an electron beam is irradiated onto the phosphor screen surface of the front substrate 11 and the electron-emitting device surface of the rear substrate 12 from an electron beam generator (not shown) attached to the baking and electron beam cleaning chamber 102. At that time, the electron beam is deflected and scanned by a deflection device mounted outside the electron beam generator, whereby the entire surfaces of the phosphor screen surface and the electron-emitting device surface are respectively cleaned with the electron beam.

  The front substrate 11 and the rear substrate 12 that have been subjected to baking and electron beam cleaning are sent to a cooling chamber 103, cooled to a temperature of about 120 ° C., and then sent to a getter film deposition chamber 104. In the vapor deposition chamber 104, a barium film is deposited on the outside of the metal back 17 as the getter film 27. The barium film can prevent the surface from being contaminated with oxygen, carbon, or the like, and can maintain an active state.

  Subsequently, the front substrate 11 and the rear substrate 12 are sent to the assembly chamber 105. In the assembly chamber 105, the front substrate 11 and the rear substrate 12 are respectively held by a pair of hot plates (not shown) in the assembly chamber in a state of being opposed to each other. The front substrate 11 is fixed to the upper hot plate by a fixing jig (not shown) so as not to fall.

  Thereafter, while maintaining the front substrate 11 and the rear substrate 12 at approximately 120 ° C., the indium of the sealing layer 21 is melted by energization heating by supplying DC power from the power supply device 120 while being moved toward each other. The peripheral edge of the back substrate 12 is sealed. A manufacturing method according to an embodiment of the present invention at this time will be described with reference to FIGS.

  First, the manufacturing method according to the first embodiment of the present invention will be described with reference to FIGS. In the manufacturing method according to the first embodiment, a base layer and a sealing layer are formed on each of the front substrate 11 and the rear substrate 12, and the sealing layer provided on one of the substrates is melted by energization heating. The sealing surfaces of the front substrate 11 and the rear substrate 12 are sealed by superimposing the substrates and melting the sealing material provided on the other substrate with the heat of fusion of the sealing material provided on the one substrate. ing.

  In the first embodiment, the sealing surface of the side wall 18 of the back substrate 12 is shown in FIGS. 6 (a) and 6 (b) in the step before being put into the vacuum processing apparatus. A sealing material (indium) 21a for forming the sealing layer 21 is applied to the base layer 30a over the entire circumference in a predetermined width and thickness, and further, the front surface facing the sealing surface of the side wall 18 of the back substrate 12 A sealing material 21b similar to the above is applied to the base layer 30b over the entire circumference of the sealing surface of the substrate 11 to a predetermined width and thickness. The front substrate 11 and the rear substrate 12 are sent to the assembly chamber 105 in a state of being opposed to each other, and here, a sealing process is performed by energizing and heating the one side substrate.

  In the first embodiment for realizing the sealing process by energization heating of this one side substrate, as shown in FIG. 6B and FIG. 7A, it is provided on one of the substrates, for example, the rear substrate 12. A direct current power is supplied from the power supply device 120 to the sealing material 21a, and the sealing material 21a is energized and heated. At this time, it is necessary to consider the current path so that the energization current is divided into two with respect to the sealing material 21a. FIG. 7 shows an example of a simplified model that does not include members such as the support member 14 and the side wall 18.

  In a state where the sealing material 21a is melted by the energization heating, the front substrate 11 and the rear substrate 12 are brought close to each other, and the substrates are overlapped with the sealing surfaces being matched.

  By this superposition, the sealing material 21a in the molten state provided on the back substrate 12 contacts the sealing material 21b provided on the front substrate 11, and the sealing material 21b provided on the front substrate 11 becomes the back substrate. 12 is melted by receiving the heat of fusion of the sealing material 21 a provided on the sealing material 21, and the sealing materials 21 a and 21 b are melted together to form an integrated sealing layer 21. This sealing state is shown in FIG. Further, FIG. 8 shows a temperature change state in the vicinity of the sealing portions of the rear substrate 12 and the front substrate 11 in the sealing process.

  FIG. 8A shows an example of state transition of temperature change during energization heating, and FIG. 8B shows an example of state transition of temperature change during substrate cooling after overlapping the substrates. Yes. Here, the sealing material is not melted by energization heating in a short time, but only one side substrate (back substrate 12) is sealed over a long period of about 60 seconds as shown in FIG. The dressing 21a is heat-treated.

  On the other hand, since the heat of fusion of the sealing material 21a is taken away by the sealing material 21b after superposition, as shown in FIG. The sealing layer 21 becomes solidified (for example, 140 ° C. or lower) in about 90 seconds, and the cooling process can be completed in about 3 minutes. Therefore, in the example of FIG. 8, the sealing process is completed in about 3 to 4 minutes in total, 1 minute for heating and 2 to 3 minutes for cooling.

  Note that the example shown in FIG. 8 is an example in which the sealing material 21a provided on the back substrate 12 and the sealing material 21b provided on the front substrate 11 are made equal, and the heat dissipation characteristics of the substrate, metal By appropriately adjusting and distributing the amount of the sealing material 21a provided on the back substrate 12 and the amount of the sealing material 21b provided on the front substrate 11 in consideration of various conditions such as the thermal characteristics of the sealing material. A more efficient and stable sealing is possible by the sealing process by energization heating of the one-side substrate. For example, in the sealing process, the amount of heat transferred from the substrate that is energized and heated (in this example, the back substrate 12) to the substrate that is not heated (in this example, the front substrate 11) is limited to a necessary minimum. In this case, it is conceivable that the amount of the sealing material 21 a provided on the back substrate 12 is made smaller than the amount of the sealing material 21 b provided on the front substrate 11. In addition, when the bonding strength of the substrate, the sealing material, the fusion time, and the like are used as conditions, it is conceivable to allocate a large amount of the sealing material on the side to be electrically heated.

  Next, a second embodiment for realizing a sealing process by energization heating of one side substrate will be described with reference to FIG. In the manufacturing method according to the second embodiment, the base layer and the sealing layer are formed on one substrate, only the base layer is formed on the other substrate, and the sealing layer provided on the one substrate is heated by energization. The sealing surfaces of the substrates are sealed by fusing them and fusing the melted sealing material to the base layer provided on the other substrate. In the example shown in FIG. 9A, a sealing material 21 a for forming a sealing layer and a base layer 30 a are provided on the back substrate 12, and only the base layer 30 b is provided on the front substrate 11.

  In the second embodiment, as shown in FIG. 9A, for example, DC power is supplied from the power supply device 120 to the sealing material 21a provided on the back substrate 12, and the sealing material 21a is heated by energization. To do.

  In a state where the sealing material 21a is melted by this energization heating, the front substrate 11 and the rear substrate 12 are brought close to each other and the substrates are overlapped with the sealing surfaces being matched.

  By this superposition, as shown in FIG. 9B, the sealing material 21a in the molten state provided on the back substrate 12 comes into contact with the base layer 30b provided on the front substrate 11, and the sealing material 21a is The sealing layer 21 is formed by fusing to the base layer 30b.

  The sealing process by energization heating of the one-sided substrate according to the second embodiment can omit the step of providing a sealing material on the front substrate 11 and can eliminate the time required for melting the sealing materials from each other. Can be simplified and the time can be shortened.

  Next, a third embodiment that realizes a sealing process by energization heating of the one-side substrate will be described with reference to FIG. In the manufacturing method according to the third embodiment, the base layer and the sealing layer are formed on one substrate, only the base layer is formed on the other substrate, and the sealing layer provided on the one substrate is used as the base layer. The sealing surfaces of the substrates are sealed together by melting by energization heating and fusing the melted sealing material to the base layer provided on the other substrate. In the example shown in FIG. 10A, a sealing material 21 a for forming a sealing layer and a base layer 30 a are provided on the back substrate 12, and only the base layer 30 b is provided on the front substrate 11.

  In the second embodiment, the sealing material 21a is melted by indirectly heating and energizing the sealing material 21a through the base layer 30a, instead of directly supplying current to the sealing material 21a and heating it. . That is, as shown in FIG. 10A, for example, the base layer 30a provided on the back substrate 12 is supplied with DC power from the power supply device 120 to energize and heat the base layer 30a, and the heat generated in the base layer 30a. The sealing material 21a provided on the foundation layer 30a is melted.

  In a state where the sealing material 21a is melted by this energization heating, the front substrate 11 and the rear substrate 12 are brought close to each other and the substrates are overlapped with the sealing surfaces being matched.

  By this superposition, as shown in FIG. 10B, the molten sealing material 21a provided on the back substrate 12 comes into contact with the base layer 30b provided on the front substrate 11, and the sealing material 21a is The sealing layer 21 is formed by fusing to the base layer 30b.

  In the third embodiment, as in the second embodiment described above, the process of providing the sealing material on the front substrate 11 can be omitted, and the time required for melting the sealing materials can be eliminated. The process can be simplified and the time can be shortened.

  Further, as another embodiment for realizing the sealing process by energization heating of the one side substrate, for example, in FIG. 10A, only the base layer 30a is formed on the back substrate 12, and the base layer 30b of the front substrate 11 is formed. When the sealing layer is formed in advance, the base layer 30a provided on the back substrate 12 is supplied with DC power from the power supply device 120 to energize and heat the base layer 30a, and the substrates are overlapped with each other. The sealing layer formed on the base layer 30 b of the front substrate 11 is dissolved by the heat of the base layer 30 a provided on the back substrate 12, and the sealing layer provided on the front substrate 11 is dissolved in the base layer 30 a provided on the back substrate 12. It is also possible to form the sealing layer 21 by fusing. Further, in each of the above embodiments, it is possible to promote the fusion of the sealing material by energizing and heating the base layer provided on the substrate that is not energized and heated.

As described above, in the assembly chamber 105, the sealing surfaces of the substrates are sealed by the sealing process by energization heating of the one-side substrate.
The front substrate 11 and the rear substrate 12 sealed by the above process are cooled to room temperature in the cooling chamber 106 and taken out from the unload chamber 107. Thereby, the vacuum envelope 10 of the FED is completed.
In addition, this invention is not limited to the said embodiment, In an implementation stage, a component can be deform | transformed and embodied in the range which does not deviate from the summary of this invention. In addition, various inventions can be formed by appropriately combining a plurality of components disclosed in the embodiment. For example, in the above embodiment, the sealing process by energization heating of the one-side substrate using a metallic sealing material such as indium is taken as an example, but the sealing material using an external heat source such as a lamp heater other than the energization heating is used. It is also possible to apply a melting means for sealing materials, a melting means for sealing materials by a combination of electric heating and an external heat source, and the like. Further, the sealing material is not limited to indium. For example, in the case of a sealing process by energization heating, another sealing material having conductivity may be used. As a specific example, a metal containing at least one of In, Sn, Pb, Ga, and Bi can be used as the sealing material. In addition, the side wall of the envelope may be formed integrally with the rear substrate or the front substrate in advance, and further, the outer shape of the vacuum envelope, the configuration and arrangement of the support member, the presence or absence of the underlayer, the electronic The type of the emission element is not limited to the above embodiment, and the method of the present invention can be applied to various configurations. In the above-described embodiment, the step of bonding the substrates in a vacuum atmosphere has been described. However, the method of the present invention can be applied in other atmospheric environments. Further, the present invention is not limited to the manufacture of the FED, but can also be applied to the manufacture of other image display devices such as SED and PDP, or the image display device in which the inside of the envelope does not become a high vacuum.

The perspective view which shows the whole FED which concerns on embodiment of this invention. The perspective view which shows the internal structure of the said FED. FIG. 2 is a cross-sectional view taken along line AA in FIG. 1. The top view which expands and shows a part of phosphor screen of the FED. The figure which shows schematically the vacuum processing apparatus used for manufacture of the said FED. The top view which shows the front substrate used for manufacture of the said FED for demonstrating 1st Embodiment of this invention, and a back substrate. Process explanatory drawing of the sealing process in the said 1st Embodiment. The figure which shows the state of the temperature change of the back substrate and front substrate in the sealing process of the said 1st Embodiment. Process explanatory drawing of the sealing process in 2nd Embodiment of this invention. Process explanatory drawing of the sealing process in 2nd Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Vacuum envelope, 11 ... Front substrate, 12 ... Back substrate, 14 ... Supporting member, 16 ... Phosphor screen, 18 ... Side wall, 21 ... Sealing layer, 21a, 21b ... Sealing material, 22 ... Electron emission Element 30a, 30b ... Underlayer, 100 ... Vacuum processing device, 120 ... Power supply device.

Claims (7)

In the manufacturing method of the image display device that forms the envelope by sealing the sealing portions provided on the opposing surfaces of the pair of substrates arranged opposite to each other,
Among the substrates, a sealing portion provided on one substrate is heated, and the sealing portion is overlapped with a sealing portion provided on the other substrate to seal the sealing portion of each substrate. An image display device manufacturing method characterized by the above. In the manufacturing method of the image display device that forms the envelope by sealing the sealing portions provided on the opposing surfaces of the pair of substrates arranged opposite to each other,
Of each of the substrates, a sealing portion provided on one of the substrates is energized and heated, and the energized and heated sealing portion is overlapped with a sealing portion provided on the other substrate to seal the substrates. A method for manufacturing an image display device, wherein the part is sealed.   Among each of the substrates, at least a sealing portion of the substrate has a sealing material, and the sealing material is melted and the sealing portion is sealed by contact of the sealing portions of the substrates. The method for manufacturing an image display device according to claim 1 or 2.   The sealing portion of at least one of the substrates has a base layer of the sealing material, and the sealing material is fused to the base layer to seal the sealing portion. Item 4. A method for manufacturing an image display device according to Item 3.   The method for manufacturing an image display device according to claim 4, wherein the underlayer is energized and heated to fuse the sealing material to the underlayer.   4. The method for manufacturing an image display device according to claim 3, wherein the amount of the sealing material provided on the one substrate and the amount of the sealing material provided on the other substrate are distributed under a predetermined condition.   The method for manufacturing an image display device according to claim 2, wherein a time zone of the energization heating is 2 seconds to 10 minutes.

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