JP2004265630A - Image display device and manufacturing method of the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device and a manufacturing method of the same capable of narrowing the frame and stably maintaining airtightness. <P>SOLUTION: A vacuum envelope 10 of the display device comprises a front face substrate 11 and a back face substrate 12 arranged to face each other; and a sealing part 40 sealing the peripheral part of the front face substrate and the back face substrate 11, 12 with each other. The sealing part 40 includes a frame 13 and a sealing material 32 extending along the peripheral edge of the front and the back face substrate 11, 12. The frame 13 has a cross-sectional shape in which, the gap between the outer surface of the frame 13 and at least one inner surface of the front and back face substrate 11, 12 is varied in the width direction of the frame 13, and the sealing material 32 is arranged between the frame 13 and at least one inner surface of the substrates. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an image display device having a flat shape having substrates arranged to face each other, and a method for manufacturing the same.
[0002]
[Prior art]
2. Description of the Related Art In recent years, various flat-panel image display devices have been developed as next-generation lightweight and thin display devices that replace cathode ray tubes (hereinafter, referred to as CRTs). Such an image display device includes a liquid crystal display (hereinafter, referred to as an LCD) that controls the intensity of light using the orientation of a liquid crystal, and a plasma display panel (hereinafter, referred to as a PDP) that emits a phosphor by ultraviolet rays of plasma discharge. ), A field emission display (hereinafter, referred to as FED) in which a phosphor is emitted by an electron beam of a field emission type electron emission element, and a surface conduction electron emission using a surface conduction type electron emission element as one type of FED. There is a display (hereinafter, referred to as SED).
[0003]
For example, an FED generally has a front substrate and a rear substrate that are opposed to each other with a predetermined gap therebetween. Constructs an enclosure. A phosphor screen is formed on the inner surface of the front substrate, and a number of electron-emitting devices are provided on the inner surface of the rear substrate as electron emission sources for exciting the phosphor to emit light.
[0004]
Further, in order to support the atmospheric pressure load applied to the rear substrate and the front substrate, a plurality of support members are disposed between these substrates. The potential on the back substrate side is almost the ground potential, and an anode voltage is applied to the phosphor screen. Then, an image is displayed by irradiating the red, green, and blue phosphors constituting the phosphor screen with electron beams emitted from a large number of electron-emitting devices to cause the phosphors to emit light.
[0005]
In such a display device, the thickness of the display device can be reduced to about several mm, and the weight and thickness of the display device can be reduced as compared with a CRT currently used as a display of a television or a computer. Can be.
[0006]
In the above FED, it is necessary to make the inside of the envelope a high vacuum. Also, in the case of a PDP, it is necessary to fill the discharge gas with a vacuum once. As a means for evacuating the envelope, a method has been proposed in which the final assembly of the front substrate and the rear substrate constituting the envelope is performed in a vacuum chamber (for example, see Patent Document 1).
[0007]
In this method, first, the front substrate and the rear substrate arranged in the vacuum chamber are sufficiently heated. This is to reduce the gas emission from the inner wall of the envelope, which is a main cause of deteriorating the degree of vacuum of the envelope. Next, when the front substrate and the rear substrate are cooled and the degree of vacuum in the vacuum chamber is sufficiently improved, a getter film for improving and maintaining the degree of vacuum of the envelope is formed on the phosphor screen. Thereafter, the front substrate and the rear substrate are heated again to a temperature at which the sealing material is melted, and cooled until the sealing material is solidified in a state where the front substrate and the rear substrate are combined at a predetermined position.
[0008]
The vacuum envelope created by such a method serves not only as a sealing step and a vacuum sealing step, but also does not require the time required to exhaust the inside of the envelope using an exhaust pipe, and, An extremely good degree of vacuum can be obtained.
[0009]
On the other hand, in the above method, a low melting point metal material such as indium suitable for sealing and sealing batch processing is used as a sealing material. However, since the sealing between the substrates is performed in a state where the indium is molten, there is a possibility that the molten indium may overflow into a display region inside the substrate or a wiring region around the substrate. As a solution to this problem, for example, a method has been proposed in which molten indium is actively discharged from a corner portion of a substrate during sealing (for example, Patent Document 2).
[0010]
[Patent Document 1]
JP 2001-229825 A
[Patent Document 2]
JP-A-2002-184329
[Problems to be solved by the invention]
However, indium near the center of each side of the substrate cannot move to the corner of the substrate as the size of the substrate increases, and may intrude inside or outside the substrate from a desired sealing area on the way. is there. When the indium protrudes, it comes into contact with a wiring or the like provided on the substrate, causing a problem such as a short circuit. For this reason, it is necessary to keep the width of the side wall wide so that even if the indium protrudes, it is within the width of the side wall. However, in the flat-panel type image display device, it is desirable that the area other than the display area is as small as possible, that is, the frame portion located around the display area is as small as possible.
[0013]
The present invention has been made in view of the above points, and an object of the present invention is to provide an image display device capable of narrowing a frame and maintaining a stable airtightness and a method of manufacturing the same.
[0014]
[Means for Solving the Problems]
In order to solve the above-described problems, an image display device according to an aspect of the present invention includes a front substrate and a rear substrate that are arranged to face each other, and a sealing portion that seals peripheral portions of the front substrate and the rear substrate to each other. The sealing portion includes a frame and a sealing material extending along the peripheral portion of the front substrate and the back substrate, and the frame includes the frame and the front surface. A gap between at least one of the substrate and the back substrate has a cross-sectional shape changed in a width direction of the frame, and the sealing material is provided between the frame and at least one substrate. It is characterized by.
[0015]
Further, a method of manufacturing an image display device according to an aspect of the present invention includes a front substrate and a rear substrate that are arranged to face each other, and a sealing portion that seals peripheral portions of the front substrate and the rear substrate to each other. In a method for manufacturing an image display device having an enclosed envelope,
Forming a sealing material layer over at least one of the inner peripheral edge of the front substrate and the inner peripheral edge of the rear substrate, facing the front substrate and the rear substrate on which the sealing material layer is formed. And a frame extending along the peripheral edge of the front substrate and the rear substrate between the inner peripheral edge of the front substrate and the rear substrate, and the outer surface of the frame and the front substrate and Using a frame having a cross-sectional shape in which the distance from at least one inner peripheral edge of the back substrate is changed in the width direction of the frame, heating the sealing material layer to melt or soften the sealing material. At the same time, the front substrate and the rear substrate are pressurized in a direction approaching each other to seal peripheral portions of the front substrate and the rear substrate.
[0016]
According to the image display device and the manufacturing method having the above-described configurations, when the front substrate and the rear substrate are joined at the time of sealing and pressurized at a predetermined pressure, the molten sealing material has a large gap between the substrate and the frame. Flow into the area. Therefore, the melted sealing material does not protrude into the image display region or the wiring region, and the sealing can be performed without causing a problem such as a wiring short circuit. At the same time, there is no need to secure a wide sealing width in consideration of the protrusion of the sealing material, and an image display device with a narrow frame can be obtained.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment in which an image display device according to the present invention is applied to an FED will be described in detail with reference to the drawings.
As shown in FIGS. 1 to 3, the FED includes a front substrate 11 and a rear substrate 12 each made of rectangular glass as an insulating substrate, and these substrates are opposed to each other with a gap of about 1 to 2 mm. Have been. The front substrate 11 and the rear substrate 12 are joined to each other via a rectangular frame-shaped side wall 13 to form a flat rectangular vacuum envelope 10 whose inside is maintained in a vacuum state.
[0018]
The peripheral portions of the front substrate 11 and the rear substrate 12 are joined to each other by a sealing portion 40. That is, the side wall 13 functioning as a frame is disposed between the sealing surface located at the inner peripheral edge of the front substrate 11 and the sealing surface located at the inner peripheral edge of the rear substrate 12. Further, between the front substrate 11 and the side wall 13 and between the back substrate 12 and the side wall 13, an underlayer 31 formed on the sealing surface of each substrate and an indium layer 32 formed on the underlayer are formed. Are sealed by the sealing layer 33 which is fused. A sealing portion 40 is configured by the sealing layer 33 and the side wall 13.
[0019]
In the present embodiment, the cross-sectional shape of the side wall 13 is circular. Here, the cross-sectional shape indicates a cross-sectional shape orthogonal to the long axis of the side wall 13. The distance between the sealing surface of the front substrate 11 and the outer surface of the side wall 13 and the distance between the sealing surface of the rear substrate 12 and the outer surface of the side wall 13 change in the width direction of the side wall. That is, when the side wall 13 is formed in a circular cross section, the distance between them is narrow at the center in the width direction of the side wall, and gradually widens toward both sides. The indium layer 32 is filled between the sealing surface of the front substrate 11 and the outer surface of the side wall 13 and between the sealing surface of the rear substrate 12 and the side wall screen. At this time, the width of each indium layer 32 is set within the range of the maximum width of the side wall 13.
[0020]
A plurality of plate-shaped support members 14 are provided inside the vacuum envelope 10 to support the atmospheric pressure load applied to the rear substrate 12 and the front substrate 11. These support members 14 extend in a direction parallel to the short side of the vacuum envelope 10 and are arranged at predetermined intervals along a direction parallel to the long side. Note that the shape of the support member 14 is not particularly limited to this, and a columnar support member may be used.
[0021]
As shown in FIG. 4, a phosphor screen 16 is formed on the inner surface of the front substrate 11. The phosphor screen 16 has striped phosphor layers R, G, and B that emit light of three colors, red, blue, and green, and a striped black light absorption as a non-light-emitting portion located between these phosphor layers. The layers 20 are arranged side by side. The phosphor layers R, G, and B extend in a direction parallel to the short side of the vacuum envelope 10 and are arranged at predetermined intervals along a direction parallel to the long side. A metal back 17 made of aluminum is deposited on the phosphor screen 16, and a getter film (not shown) is formed on the metal back.
[0022]
On the inner surface of the rear substrate 12, a large number of field emission type electron emission elements 22 each emitting an electron beam are provided as electron emission sources for exciting the phosphor layers R, G, B. These electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. In addition, on the inner surface of the rear substrate 12, a number of wirings 21 for supplying a drive signal to the electron-emitting devices 22 are formed in a matrix, and the ends thereof are extended to the peripheral edge of the rear substrate.
[0023]
Next, a method of manufacturing the FED configured as described above will be described in detail. First, the phosphor screen 16 is formed on a plate glass to be the front substrate 11. In this method, a glass sheet having the same size as the front substrate 11 is prepared, and a stripe pattern of the phosphor layer is formed on the glass sheet by a plotter machine. The plate glass on which the phosphor stripe pattern is formed and the plate glass for the front substrate are placed on a positioning jig and set on an exposure table, thereby exposing and developing the phosphor screen 16.
[0024]
Subsequently, the electron-emitting devices 22 are formed on the glass plate for the rear substrate. In this case, a matrix-shaped conductive cathode layer is formed on a sheet glass, and an insulating film of a silicon dioxide film is formed on the conductive cathode layer by, for example, a thermal oxidation method, a CVD method, or a sputtering method. After that, a metal film for forming a gate electrode such as molybdenum or niobium is formed on the insulating film by, for example, a sputtering method or an electron beam evaporation method. Next, a resist pattern having a shape corresponding to the gate electrode to be formed is formed on the metal film by lithography. Using the resist pattern as a mask, the metal film is etched by a wet etching method or a dry etching method to form a gate electrode 28.
Since a high voltage is applied to the phosphor screen 16, a high strain point glass is used for the plate glass for the front substrate 11, the rear substrate 12, and the support member 14.
[0025]
Subsequently, the insulating film is etched by wet etching or dry etching using the resist pattern and the gate electrode as a mask to form the cavity 25. After removing the resist pattern, a release layer made of, for example, aluminum or nickel is formed on the gate electrode 28 by performing electron beam evaporation from a direction inclined at a predetermined angle with respect to the rear substrate surface. Thereafter, for example, molybdenum as a material for forming a cathode is vapor-deposited from a direction perpendicular to the surface of the rear substrate by an electron beam vapor deposition method. Thus, the electron-emitting device 22 is formed inside each cavity 25. Subsequently, the release layer together with the metal film formed thereon is removed by a lift-off method.
[0026]
Subsequently, a side wall 13 arranged on the periphery of the substrate is formed. The side wall 13 is formed by using a metal round bar or wire having a circular cross section and bending it into a rectangular frame shape according to the required size. As the metal, for example, a conductive metal such as a simple substance or an alloy containing any of Fe, Ni, and Ti, or a non-conductive metal such as glass or ceramic can be used. Here, Fe was used.
[0027]
The bent portions are three portions corresponding to the three corners of the side wall. A portion corresponding to the remaining one corner of the side wall 13 is formed by welding both ends of a round bar or a wire to each other with a laser welding machine. At this time, the side wall is produced by instantaneously melting only the welded portion by a laser welding machine. In addition, it is desirable that no irregularities remain at the connection points during welding, but if irregularities occur, they can be sufficiently used as side walls by flattening with a metal file or the like.
[0028]
Next, a silver paste is applied to the sealing surface located at the inner peripheral edge of the front substrate 11 and the sealing surface located at the inner peripheral edge of the rear substrate 12 by a screen printing method, respectively. To form Subsequently, indium is applied as a metal sealing material having conductivity on each of the base layers 31 to form indium layers 32 extending over the entire circumference of the base layers.
[0029]
In addition, as the metal sealing material, it is desirable to use a low-melting-point metal material having a melting point of about 350 ° C. or less and having excellent adhesion and bonding properties. Indium (In) used in this embodiment has not only a low melting point of 156.7 ° C. but also excellent characteristics such as a low vapor pressure, a soft and strong impact, and a low brittleness even at a low temperature. In addition, it can be directly bonded to glass depending on conditions, and is a material suitable for the purpose of the present invention.
[0030]
Next, as shown in FIG. 5, the back substrate 12 having the underlayer 31 and the indium layer 32 formed on the sealing surface and the front substrate 12 having the side wall 13 mounted on the indium layer 32 are sealed. The jigs and the like are held in a state where the wearing surfaces face each other and face each other at a predetermined distance. At this time, for example, the front substrate 11 is arranged below the rear substrate 12 with the front substrate 11 facing upward. Then, in this state, the front substrate 11 and the rear substrate 12 are put into a vacuum processing apparatus.
[0031]
As shown in FIG. 6, the vacuum processing apparatus 100 includes a load chamber 101, a baking chamber, an electron beam cleaning chamber 102, a cooling chamber 103, a getter film deposition chamber 104, an assembly chamber 105, and a cooling chamber 106 provided in this order. , And an unloading chamber 107. Each of these chambers is configured as a processing chamber capable of performing vacuum processing, and all the chambers are evacuated during the manufacture of the FED. Adjacent processing chambers are connected by a gate valve or the like.
[0032]
The front substrate 11 and the rear substrate 12 on which the side walls 13 are placed are loaded into the load chamber 101, and after the inside of the load chamber 101 is evacuated, sent to the baking and electron beam cleaning chamber 102. In the baking and electron beam cleaning chamber 102, when a high degree of vacuum of about 10 ⁻⁵ Pa is reached, the back assembly and the front substrate are heated to a temperature of about 300 ° C. and baked, and the surface of each member is adsorbed. Allow sufficient gas to be released.
[0033]
At this temperature, the indium layer (melting point: about 156 ° C.) 32 melts. However, since the indium layer 32 is formed on the underlayer 31 having high affinity, the indium flows and is held on the underlayer. Then, the side wall 13 and the front substrate 12 are joined by the molten indium. Hereinafter, the front substrate 11 to which the side walls 13 are joined is referred to as a front substrate side assembly.
[0034]
In the baking / electron beam cleaning chamber 102, simultaneously with heating, an electron beam generator (not shown) attached to the baking / electron beam cleaning chamber 102 transmits the phosphor screen surface of the front substrate side assembly and the back substrate. Twelve electron-emitting device surfaces are irradiated with an electron beam. Since this electron beam is deflected and scanned by a deflecting device mounted outside the electron beam generator, it is possible to clean the entire surface of the phosphor screen surface and the electron emission element surface with the electron beam.
[0035]
After the heating and the electron beam cleaning, the front substrate side assembly and the rear substrate 12 are sent to the cooling chamber 103 and cooled to a temperature of about 100 ° C., for example. Subsequently, the front substrate side assembly and the rear substrate 12 are sent to the getter film deposition chamber 104, where a Ba film is deposited as a getter film on the phosphor screen and the metal back. The surface of the Ba film is prevented from being contaminated with oxygen, carbon, or the like, and can maintain an active state.
[0036]
Next, the front substrate side assembly and the rear substrate 12 are sent to the assembly chamber 105, where they are heated to 200 ° C. Thereby, the indium layer 32 is again melted or softened into a liquid state. In this state, the side wall 13 and the rear substrate 12 are joined with the indium layer 32 interposed therebetween, and are pressed with a predetermined pressure in a direction approaching each other. At this time, a part of the pressurized molten indium tends to flow in the direction of the display area or the wiring area of the rear substrate 12, but since the side wall 13 has a circular cross section, the molten indium is In the display area or the wiring area beyond the width of the side wall. Also in the front substrate side assembly, the indium melted again stays at a place where the distance between the sealing surface of the front substrate 11 and the outer surface of the side wall 13 is large, and is prevented from flowing to the display area side or outside beyond the width of the side wall. Is done. Accordingly, indium is maintained within the maximum width of the cross section of the side wall 13 on both the front substrate 11 side and the rear substrate 12 side.
[0037]
Thereafter, the indium is cooled and solidified. As a result, the back substrate 12 and the side wall 13 are sealed by the sealing layer 33 in which the indium layer 32 and the base layer 31 are fused. At the same time, the front substrate 11 and the side wall 13 are sealed by the sealing layer 33 in which the indium layer 32 and the base layer 31 are fused, and the vacuum envelope 10 is formed.
The vacuum envelope 10 thus formed is cooled to room temperature in the cooling chamber 106 and then taken out of the unloading chamber 107. Through the above steps, the FED is completed.
[0038]
According to the FED and the manufacturing method thereof configured as described above, the front substrate 11 and the rear substrate 12 are sealed in a vacuum atmosphere, so that the surface adsorbed gas on the substrate can be sufficiently reduced by using both baking and electron beam cleaning. And the getter film is not oxidized, and a sufficient gas adsorption effect can be obtained. Thereby, an FED that can maintain a high degree of vacuum can be obtained.
[0039]
Further, at the time of sealing, when the front substrate 11 and the rear substrate 12 are joined and pressurized at a predetermined pressure, the melted sealing material flows into a region having a large space between the substrate sealing surface and the outer surface of the side wall. Therefore, the molten sealing material does not protrude into the image display area or the wiring area, and reliable sealing can be performed without causing a problem such as a short circuit of the wiring. At the same time, it is not necessary to secure a wide sealing width in consideration of the protrusion of the sealing material, and an FED with a narrow frame can be obtained. Further, according to the above configuration, even a large-sized image display device having a size of 50 inches or more can be easily and reliably sealed, and excellent mass productivity can be obtained.
[0040]
In the above-described embodiment, the cross-sectional shape of the side wall 13 is circular. However, the cross-sectional shape is not limited to this, and the distance between the outer surface of the side wall and at least one of the sealing surfaces of the front substrate and the rear substrate changes in the width direction of the side wall. Any shape may be used, and a surface non-parallel to at least one of the sealing surfaces of the front substrate and the rear substrate, that is, a cross-sectional shape having at least a part that is not parallel to the sealing surface is formed. It should be done. For example, as shown in FIGS. 7A, 7B, 7C, and 7D, the side wall 13 may be formed in an elliptical, cross-shaped, or rhombic cross-sectional shape.
[0041]
The side wall 13 is not limited to a solid one and may have a hollow structure as shown in FIG. Also in this case, the cross-sectional shape of the side wall 13 is not limited to a circle, but may be an ellipse or a cross as in the embodiments shown in FIGS. 7 (a), 7 (b), 7 (c) and 7 (d). It may be formed in a shape or a rhombic cross-sectional shape.
As shown in FIG. 9, the sealing layer 33 between the side wall 13 and the front substrate 11 and the sealing layer 33 between the side wall 13 and the back substrate 12 are connected around the side wall, and the side wall is formed in the sealing layer 33. 13 may be embedded.
[0042]
The side wall 13 is not limited to metal, and may be formed of other materials such as glass and ceramic as long as the side wall shape is in accordance with the above-described embodiment.
[0043]
In addition, the sealing material is not limited to indium, and when sealing a glass panel, a sealing material that reduces the difference in thermal expansion coefficient between the glass panel and the sealing material or that reduces the effect of thermal expansion is used. Can be used as For example, as a sealing material, an alloy containing at least either In or Ga can be used as a sealing material, and frit glass, an organic adhesive, or an inorganic adhesive can be used as a non-conductive material.
[0044]
Further, in the above-described embodiment, when manufacturing the vacuum envelope, between the side wall and the front substrate, and between the side wall and the back substrate in a vacuum atmosphere, a configuration in which a sealing material such as indium is used. However, in advance, between the side wall and the front substrate, or between the side wall and the back substrate, after bonding in the atmosphere with a sealing material such as indium, or low melting glass, the remaining bonding portion described above. A configuration in which bonding is performed in a vacuum atmosphere by a process may be adopted.
[0045]
In the above-described embodiment, when the front substrate and the rear substrate are joined, the substrates are heated to about 200 ° C. in the assembly chamber to melt or soften the indium layer. However, the entire substrate is heated. Alternatively, the indium layer may be melted or softened by applying electric current. That is, the front substrate and the rear substrate are pressurized in a direction approaching each other, and while the side wall is sandwiched between the indium layers, the side wall 13 is energized to generate heat by Joule heat. It is good also as a structure to wear. In this case, the side wall 13 is formed of a conductive material. In this case, by forming the side wall 13 to have a hollow structure as shown in FIG. 8, a structure having high resistance and easy to generate heat can be obtained, and the amount of electricity can be reduced. At the same time, the heat capacity of the side wall 13 is reduced, and the side wall can be cooled in a short time after sealing the front substrate and the rear substrate. As a result, it is possible to improve the manufacturing efficiency.
Alternatively, instead of the side wall 13, a configuration may be adopted in which the indium layer 32 is melted or softened by Joule heat by directly energizing the indium layer 32 to seal the substrate.
[0046]
In addition, the present invention is not limited to the above-described embodiment, and can be variously modified within the scope of the present invention. For example, in the above-described embodiment, a field emission type electron emission element is used as the electron emission element, but the present invention is not limited to this. An element may be used. Further, the present invention is not limited to a display device requiring a vacuum envelope such as an FED or an SED, but is also applicable to other image display devices such as a PDP in which a vacuum is applied once and a discharge gas is injected. It is valid.
[0047]
【The invention's effect】
As described above in detail, according to the present invention, it is possible to provide an image display device capable of narrowing a frame and maintaining stable airtightness and a method of manufacturing the same.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an FED according to an embodiment of the present invention.
FIG. 2 is a perspective view showing a state where a front substrate of the FED is removed.
FIG. 3 is a sectional view taken along the line AA in FIG. 1;
FIG. 4 is a plan view showing a phosphor screen of the FED.
FIG. 5 is a cross-sectional view showing a state in which a front substrate and a rear substrate are arranged to face each other in the manufacturing process of the FED.
FIG. 6 is a view schematically showing a vacuum processing apparatus used for manufacturing the FED.
FIG. 7 is a sectional view showing a sealing portion of an FED according to another embodiment of the present invention.
FIG. 8 is a cross-sectional view showing a sealing portion of an FED according to still another embodiment of the present invention.
FIG. 9 is a sectional view showing a sealing portion of an FED according to another embodiment of the present invention.
[Explanation of symbols]
10: vacuum envelope, 11: front substrate, 12: rear substrate,
13 ... side wall, 14 ... support member, 16 ... phosphor screen,
22: electron-emitting device, 31: underlayer, 32: indium layer,
33: sealing layer, 40: sealing part

Claims (21)

A front substrate and a rear substrate, which are arranged to face each other, and a sealing portion that seals peripheral portions of the front substrate and the rear substrate to each other, and
The sealing portion includes a frame body and a sealing material extending along a peripheral portion of the front substrate and the rear substrate, and the frame body includes an outer surface of the frame body and at least one of the front substrate and the rear substrate. An image display device having a cross-sectional shape in which a distance from an inner surface of a substrate changes in a width direction of the frame, and wherein the sealing material is provided between the frame and at least one inner surface of the substrate. The image display device according to claim 1, wherein the frame has a circular or elliptical cross-sectional shape. The image display device according to claim 1, wherein the frame has a rhombic cross-sectional shape. The image display device according to claim 1, wherein the frame has a cross-sectional shape of a cross. 2. The image display device according to claim 1, wherein the frame is formed in a cross-sectional shape having at least a part of a surface non-parallel to the at least one substrate inner surface. 3. The image display device according to claim 1, wherein the frame is hollow. The image display device according to any one of claims 1 to 5, wherein the frame is formed solid. The image display device according to claim 1, wherein the sealing material is provided between the frame and the front substrate and between the frame and the rear substrate. The image display device according to claim 1, wherein the sealing material is provided within a range of a maximum width of the frame body cross section. 9. The image display device according to claim 1, wherein the entire outer surface of the frame is covered with the sealing material. The image display device according to claim 1, wherein the sealing material is a low melting point metal. The image display device according to any one of claims 1 to 11, wherein the sealing material has conductivity. 13. The image display device according to claim 1, wherein the sealing material is indium or an alloy containing indium. The image display device according to claim 1, wherein the sealing material is a non-conductive material. The image display device according to any one of claims 1 to 11, wherein the sealing material is frit glass, an organic adhesive, or an inorganic adhesive. The image display device according to any one of claims 1 to 15, wherein the frame has conductivity. A phosphor layer provided on the inner surface of the front substrate, and a plurality of electron sources provided on the inner surface of the back substrate for exciting the phosphor layer, wherein the inside of the envelope is maintained in a vacuum. The image display device according to any one of claims 1 to 16, wherein: In a method for manufacturing an image display device including an envelope having a front substrate and a rear substrate disposed to face each other, and a sealing portion in which peripheral portions of the front substrate and the rear substrate are sealed to each other,
Forming a sealing material layer over the entire circumference on at least one of the inner peripheral edge of the front substrate and the inner peripheral edge of the rear substrate,
The front substrate and the rear substrate on which the sealing material layer is formed are arranged to face each other,
A frame extending along the peripheral edge of the front substrate and the rear substrate is disposed between the inner peripheral edge of the front substrate and the rear substrate, and the outer surface of the frame and the front substrate and the rear substrate are Using a frame having a cross-sectional shape in which the interval with at least one inner surface peripheral portion has changed in the width direction of the frame,
The sealing material layer is heated to melt or soften the sealing material, and the front substrate and the rear substrate are pressed in a direction approaching each other to seal the peripheral portions of the front substrate and the rear substrate. Manufacturing method of an image display device. 19. The method according to claim 18, wherein the front substrate and the rear substrate are heated in a vacuum atmosphere to melt or soften the sealing material layer. 19. The image display device according to claim 18, wherein the frame is formed of a conductive material, and the frame is melted or softened by energizing the frame in a vacuum atmosphere. Production method. 19. The method according to claim 18, wherein the sealing material layer is formed of a conductive material, and the sealing material layer is melted or softened by applying a current to the sealing material layer in a vacuum atmosphere. A method for manufacturing an image display device.

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