JP2005174688A - Manufacturing method and manufacturing device for picture display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing device for a picture display device wherein sealing can be performed in a short time and stably while maintaining the whole substrate at low temperature. <P>SOLUTION: After a sealing material having conductivity is arranged and sealing layers 21a, 21b are formed along the inner periphery part of at least one of a front substrate 11 and a rear substrate 12, these substrates are arranged opposed to each other. By impressing a welding pressure on at least one of the front substrate and rear substrate, the substrates are pressurized in mutually approaching direction, and by interposing a sealing layer in between, at least a part of the front substrate and the rear substrate is mutually contacted. While the welding pressure is impressed, electricity is made to flow to the sealing layer and the sealing material is heated and melted, and the surrounding parts of the front substrate and the rear substrates are jointed. When turning on electricity and heating the sealing material, the turning on of electricity to the sealing material is controlled based on the changes in the welding pressure. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a manufacturing method and a manufacturing apparatus of an image display device having a substrate and a plurality of pixels arranged to face each other.

  In recent years, various image display devices have been developed as next-generation light-weight and thin display devices that replace cathode ray tubes (hereinafter referred to as CRTs). Such an image display device includes a liquid crystal display (hereinafter referred to as LCD) that controls the intensity of light using the orientation of liquid crystal, and a plasma display panel (hereinafter referred to as PDP) that emits phosphors by plasma discharge ultraviolet rays. Field emission display (hereinafter referred to as FED) that emits a phosphor with an electron beam of a field emission electron emission device, and a surface conduction electron emission display that emits a phosphor with an electron beam of a surface conduction electron emission device (hereinafter referred to as FED). Hereinafter referred to as SED).

  For example, FEDs and SEDs generally have a front substrate and a back substrate facing each other with a predetermined gap, and these substrates are vacuum-bonded by bonding their peripheral parts to each other via a rectangular frame-shaped side wall. The envelope is configured. A phosphor screen is formed on the inner surface of the front substrate, and a number of electron-emitting devices are provided on the inner surface of the rear substrate as electron emission sources that excite the phosphor to emit light.

  Further, in order to support an atmospheric pressure load applied to the back substrate and the front substrate, a plurality of support members are disposed between these substrates. The potential on the back substrate side is almost the ground potential, and an anode voltage is applied to the phosphor screen. The red, green, and blue phosphors that make up the phosphor screen are irradiated with the electron beams emitted from the electron-emitting devices, and the phosphors emit light to display an image.

  With such FEDs and SEDs, the thickness of the display device can be reduced to a few millimeters, and it is lighter and thinner than CRTs currently used as television and computer displays. can do.

  For example, in the FED as described above, various manufacturing methods have been studied in order to join a front substrate and a rear substrate constituting an envelope through a rectangular frame side wall. For example, in the vacuum device, the front substrate and the back substrate are sufficiently separated and the two substrates are baked while the entire vacuum device is exhausted to a high vacuum. The method of joining a board | substrate and a back substrate through a side wall is mentioned. In this method, indium that can be sealed at a relatively low temperature is usually used as a sealing material so as not to lower the adsorption ability of the getter.

  However, although indium is a low melting point metal, its melting temperature is about 160 ° C., and it has been confirmed that the adsorption ability of the getter is lowered even at this temperature. In addition, it was confirmed by experiments that the life characteristics deteriorate when the image display device sealed at this temperature is operated.

As a method for solving these problems, a low melting point sealing material such as indium is filled between the substrates, and the sealing material itself is heated and melted by the Joule heat to bond the substrates together. A method (hereinafter referred to as energization heating) has been studied (see, for example, Patent Document 1). According to this method, since only the sealing material can be melted at a high temperature while keeping the getter formation region at about 100 to 140 ° C., it is possible to prevent the adsorption ability of the getter from being lowered. Further, it is not necessary to spend an enormous amount of time for heating and cooling the substrate, and it is possible to bond the substrates and form an envelope in a short time.
JP 2002-319346 A

  However, in the above-described manufacturing method, in the filling process of indium, variations in the filling width and thickness of indium occur due to temperature, ultrasonic energy, changes in filling jig over time, and the like. Further, the indium at the time of energization is uneven and dense due to changes in surface tension. Furthermore, the substrate temperature during energization may vary slightly due to changes in the manufacturing apparatus over time, substrate warpage, and the like.

  When heat sealing is performed at about 160 ° C. as in the prior art, such a variation in filled indium does not have a significant effect on the sealing, and thus has not been a problem. However, in the case of energization sealing, since the heat generation of indium varies depending on the variation of filled indium, problems such as the temperature becoming too high and the substrate being cracked and the cooling time being extended occur. On the other hand, there is a problem that the current is stopped before the indium is completely melted at a low temperature, and sealing cannot be performed. For this reason, a manufacturing method that is not affected by variations in indium and substrate temperature is desired.

  The present invention has been made in view of these problems, and an object of the present invention is to provide a manufacturing method and a manufacturing apparatus for an image display device capable of stably performing sealing in a short time while maintaining the entire substrate at a low temperature. Is.

An image display device manufacturing method according to an aspect of the present invention includes an envelope having a front substrate and a rear substrate, which are arranged to face each other with a gap therebetween and whose peripheral portions are joined to each other, and the envelope In a method for manufacturing an image display device comprising a plurality of pixels provided,
A conductive sealing material is disposed along an inner peripheral edge of at least one of the front substrate and the rear substrate to form a sealing layer, and the front substrate and the rear substrate are disposed to face each other, and then the front surface Applying pressure to at least one of the substrate and the back substrate to press the substrates in a direction approaching each other, contacting at least a part of the front substrate and the back substrate with the sealing layer interposed therebetween, In the state in which the pressure is applied, the sealing layer is energized to heat and melt the sealing material, the peripheral portions of the front substrate and the back substrate are joined to each other, and the sealing material is energized and heated. It is characterized in that the energization to the sealing material is controlled based on the change in pressure.

An apparatus for manufacturing an image display device according to an embodiment of the present invention includes an envelope having a front substrate and a rear substrate, which are opposed to each other with a gap therebetween, and whose peripheral portions are joined to each other, and the front substrate and the rear substrate. In a manufacturing apparatus for an image display device, comprising: a sealing layer including a conductive material disposed along at least one inner peripheral edge of the plurality of pixels; and a plurality of pixels provided in the envelope.
A power source for passing a current through the sealing layer, a support mechanism for supporting the front substrate and the back substrate opposite to each other, and a drive for pressing at least one of the front substrate and the back substrate toward the other substrate A mechanism, a measuring instrument that measures a change in pressure applied when pressing the one substrate, a power supply control unit that controls a current or voltage output from the power supply in accordance with the change in pressure, It is characterized by having.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method and manufacturing apparatus of an image display apparatus which can be stably sealed in a short time, maintaining the whole board | substrate at low temperature can be provided.

Hereinafter, an embodiment in which an image display device according to the present invention is applied to an FED will be described in detail with reference to the drawings.
As shown in FIGS. 1 to 4, the FED includes a front substrate 11 and a rear substrate 12 each made of a rectangular glass plate, and these substrates are arranged to face each other at a predetermined interval. The back substrate 12 is formed to have a size larger than that of the front substrate 11. The front substrate 11 and the back substrate 12 constitute a flat rectangular vacuum envelope 10 whose peripheral portions are bonded to each other via a rectangular frame-shaped side wall 18 and the inside is maintained at a high vacuum. .

  A plurality of plate-like support members 14 are provided inside the vacuum envelope 10 in order to support an atmospheric pressure load applied to the front substrate 11 and the rear substrate 12. These support members 14 extend in a direction parallel to one side of the vacuum envelope 10 and are arranged at a predetermined interval along a direction perpendicular to the one side. The support member is not limited to a plate shape, and a columnar member may be used.

  A phosphor screen 16 that functions as an image display surface is formed on the inner surface of the front substrate 11. The phosphor screen 16 is configured by arranging red, green, and blue phosphor layers R, G, and B, and a light shielding layer 20 positioned between these phosphor layers. The phosphor layers R, G, and B extend in a direction parallel to the one side of the vacuum envelope 10 and are arranged at a predetermined interval along a direction orthogonal to the one side. On the phosphor screen 16, for example, a metal back layer 17 made of aluminum and a getter film 27 made of barium are sequentially stacked.

  As shown in FIG. 3, on the inner surface of the back substrate 12, a large number of electron-emitting devices 22 that emit electron beams are provided as electron-emitting sources that excite the phosphor layer of the phosphor screen 16. These electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. More specifically, a conductive cathode layer 24 is formed on the inner surface of the back substrate 12, and a silicon dioxide film 26 having a large number of cavities 25 is formed on the conductive cathode layer. On the silicon dioxide film 26, a gate electrode 28 made of molybdenum, niobium or the like is formed. A cone-shaped electron-emitting device 22 made of molybdenum or the like is provided in each cavity 25 on the inner surface of the back substrate 12. The conductive cathode layer and the gate electrode are formed in stripes in directions orthogonal to each other, and a large number of wirings 23 for supplying a potential to the conductive cathode layer and the gate electrode are formed on the peripheral portion of the back substrate 12. Is formed.

  In the FED configured as described above, a video signal is input to the electron-emitting device 22 and the gate electrode 28 formed in a simple matrix system. When the electron-emitting device is used as a reference, a gate voltage of +100 V is applied when the luminance is highest. Further, +10 kV is applied to the phosphor screen 16. Thereby, an electron beam is emitted from the electron emitter 22. The magnitude of the electron beam emitted from the electron-emitting device is modulated by the voltage of the gate electrode 28, and this electron beam excites the phosphor layer of the phosphor screen 16 to emit light, thereby displaying an image.

  Thus, since a high voltage is applied to the phosphor screen 16, a high strain point glass is used as the plate glass for the front substrate 11, the back substrate 12, the side wall 18, and the support member 14. A space between the back substrate 12 and the side wall 18 is sealed with a low melting point glass 19. Further, the front substrate 11 and the side wall 18 are sealed by a sealing layer 21 containing indium (In) as a conductive low melting point sealing material.

Next, the manufacturing method of FED which has the said structure is demonstrated in detail.
First, the phosphor screen 16 is formed on the plate glass to be the front substrate 11. In this method, a plate glass having the same size as the front substrate 11 is prepared, and a phosphor stripe pattern is formed on the plate glass by a plotter machine. The plate glass on which the phosphor stripe pattern is formed and the plate glass for the front substrate are placed on a positioning jig and set on an exposure table. In this state, the phosphor screen is formed on the glass plate which becomes the front substrate 11 by exposing and developing. Thereafter, a positioning make 15 is formed on the inner surface corner portion of the front substrate 11, and a metal back layer 17 is formed on the phosphor screen 16.

  Subsequently, the electron-emitting device 22 is formed on the plate glass for the back substrate 12. First, a conductive cathode layer 24 is formed on a plate glass, and an insulating film of a silicon dioxide film is formed on the cathode layer by, for example, a thermal oxidation method, a CVD method or a sputtering method. Thereafter, a metal film for forming a gate electrode such as molybdenum or niobium is formed on the insulating film by, for example, sputtering or electron beam evaporation. Next, a resist pattern having a shape corresponding to the gate electrode to be formed is formed on the metal film by lithography. Using this resist pattern as a mask, the metal film is etched by wet etching or dry etching to form the gate electrode 28.

  After that, the cavity 25 is formed by etching the insulating film by wet etching or dry etching using the resist pattern and the gate electrode 28 as a mask. Then, after removing the resist pattern, a peeling layer made of, for example, aluminum or nickel is formed on the gate electrode 28 by performing electron beam evaporation from a direction inclined by a predetermined angle with respect to the back substrate surface. After that, for example, molybdenum is deposited by electron beam deposition as a material for forming the cathode from a direction perpendicular to the surface of the back substrate. As a result, the electron-emitting device 22 is formed inside the cavity 25. Next, the release layer is removed together with the metal film formed thereon by a lift-off method. Further, a positioning make 15 is formed at the inner corner portion of the back substrate 12.

  Subsequently, the side wall 18 and the support member 14 are sealed on the inner surface of the back substrate 12 by the low melting point glass 19 in the atmosphere. Thereafter, as shown in FIGS. 5 and 6, indium is filled to a predetermined width and thickness over the entire circumference of the sealing surface of the side wall 18 to form a sealing layer 21a. Similarly, indium is filled in a rectangular frame shape with a predetermined width and thickness on the sealing surface facing the side wall of the front substrate 11 to form the sealing layer 21b. The filling of the sealing layers 21a and 21b to the sealing surfaces of the side walls 18 and the front substrate 11 is a method of applying molten indium to the sealing surface, or a method of placing solid indium on the sealing surface. Etc.

  Next, as shown in FIG. 6, a pair of electrodes 30a and 30b for energization are mounted on the back substrate 12 to which the side walls 18 are bonded. Here, each electrode is formed by bending a copper plate having a thickness of, for example, 0.2 mm as a conductive member, and a mounting portion 32 that can be attached by sandwiching the peripheral portion of the back substrate 12 and a tongue that contacts a contact electrode described later. The contact part 36 which can contact the piece part 35 and the sealing layer 21 is integrally provided. The electrodes 30a and 30b are attached to the rear substrate in a state where the peripheral portion of the rear substrate 12 is elastically held by the mounting portion 32. At this time, the contact portion 36 of each electrode 3030a, 30b is brought into contact with indium formed on the side wall 18, and the electrode is electrically connected to the sealing layer 21a.

  The electrodes 30a and 30b are used as electrodes when energizing the sealing layers 21a and 21b. The electrodes 30a and 30b require a pair of a positive electrode and a negative electrode on the substrate and are energized in parallel between the pair of electrodes. It is desirable that each energization path has the same length. Therefore, the pair of electrodes 30a and 30b are mounted in the vicinity of the two corners facing the diagonal direction of the back substrate 12, and the length of the sealing layer located between the electrodes is set to be approximately equal on both sides of each electrode. Has been.

  After the electrodes 30a and 30b are mounted, the rear substrate 12 and the front substrate 11 are arranged to face each other with a predetermined distance therebetween, and in this state, they are put into a vacuum processing apparatus. Here, for example, a vacuum processing apparatus 100 as shown in FIG. 7 is used. The vacuum processing apparatus 100 includes a load chamber 101, baking, an electron beam cleaning chamber 102, a cooling chamber 103, a getter film deposition chamber 104, an assembly chamber 105, a cooling chamber 106, and an unload chamber 107 arranged side by side. ing. Connected to the assembly chamber 105 are a DC power supply 120 for energization and a computer 122 that functions as a power supply control unit for controlling the power supply. Each chamber of the vacuum processing apparatus 100 is configured as a processing chamber capable of vacuum processing, and all the chambers are evacuated when the FED is manufactured. These processing chambers are connected by a gate valve or the like (not shown).

  The above-described front substrate 11 and rear substrate 12 that are spaced apart by a predetermined distance are first put into the load chamber 101. Then, after the atmosphere in the load chamber 101 is changed to a vacuum atmosphere, it is sent to the baking and electron beam cleaning chamber 102. In the baking and electron beam cleaning chamber 102, various members are heated to a temperature of 300 ° C. to release the surface adsorption gas of each substrate. At the same time, an electron beam is irradiated onto the phosphor screen surface of the front substrate 11 and the electron-emitting device surface of the rear substrate 12 from an electron beam generator (not shown) attached to the baking and electron beam cleaning chamber 102. At that time, the electron beam is deflected and scanned by a deflection device mounted outside the electron beam generator, whereby the entire surfaces of the phosphor screen surface and the electron-emitting device surface are respectively cleaned with the electron beam.

  The front substrate 11 and the rear substrate 12 that have undergone electron beam cleaning are sent to the cooling chamber 103, cooled to a temperature of about 120 ° C., and then sent to the getter film deposition chamber 104. In the vapor deposition chamber 104, a barium film is deposited on the outside of the metal back layer 17 as the getter film 27. The barium film can prevent the surface from being contaminated with oxygen, carbon, or the like, and can maintain an active state.

  Subsequently, the front substrate 11 and the rear substrate 12 are sent to the assembly chamber 105. As shown in FIG. 8, hot plates 131 and 132 are disposed inside the assembly chamber 105 so as to face each other with a gap. A stage 134 that can be raised and lowered is disposed below the hot plate 132, and a plurality of support pins 133 are erected vertically on the stage. A spring 138 is attached to the extended end of each support pin 133. The support pin 133 is slidably inserted into a through hole formed in the hot plate 132 and can support the back substrate 12 by a tip portion thereof. The support pins 133 and the stage 134 are driven up and down by a motor 135 disposed outside the assembly chamber 105. The stage 134, the support pins 133, and the motor 135 constitute a drive mechanism, and together with the hot plates 131 and 132, a support mechanism. A load cell 139 for measuring the applied pressure acting on the substrate is installed outside the assembly chamber 105 via a bellows 140. The load cell 139 functions as a pressurizing force measuring unit and a measuring instrument.

  A pair of contact electrodes 137 that are in contact with the tongue pieces 35 of the electrodes 30 a and 30 b mounted on the back substrate 12 are provided at the ends of the hot plate 132. In addition, each contact electrode 137 is electrically connected to the power source 120 via the energization wiring 136. The current and voltage data output from the power supply 120 to the contact electrode 137 through the energization wiring 136 and the pressure data output from the load cell 139 are input to the computer 121.

  A stage 145 is disposed outside the assembly chamber 105, and an air cylinder 141 is connected to the stage. The hot plate 132 is connected to the stage 145 via a plurality of shafts 142 and bellows 143. Then, by operating the air cylinder 141, the hot plate 132 can be driven up and down in the direction of contacting and separating from the other hot plate 131.

  The front substrate 11 and the rear substrate 12 sent to the assembly chamber 105 are first positioned and fixed with respect to the corresponding hot plates 131 and 132, respectively, and the temperature is maintained at about 120 ° C. by these hot plates. At this time, after the front substrate 11 is positioned downward, it is sucked and fixed to the hot plate 131 by a known electrostatic chucking technique so as not to fall.

  After the mutual alignment of the front substrate 11 and the rear substrate 12 is completed, the motor 135 is driven to raise the stage 134 and the support pins 133, and the rear pins are supported by the support pins 133 and moved toward the front substrate 11, The rear substrate is pressed against the front substrate with a predetermined pressure. At this time, there is a slight variation in warpage and indium filling amount for each substrate, but the spring 138 provided at the tip of the support pin 133 can absorb these variations. Therefore, any substrate can be stably pressurized. By pressing, the contact portions 36 of the electrodes 30a and 30b are sandwiched between the sealing layers 21b and 21a on the front substrate 11 side and the rear substrate 12 side, and each electrode is in contact with the sealing layers 21a and 21b of both substrates. Electrical contact at the same time. At this time, the applied pressure applied to the back substrate 12 is measured by the load cell 139 and the value is input to the computer 121.

  Thereafter, the air cylinder 141 is operated to push the hot plate 132 upward, and the contact electrode 137 is brought into contact with the electrodes 30a and 30b, respectively. In this state, a 140 A direct current is output from the power source 120, and the sealing layers 21a and 21b are energized in a constant current mode through the energization wiring 136, the contact electrode 137, and the electrodes 30a and 30b. Thereby, indium is heated and melting of indium starts in about 10 seconds. Since the pressing force is applied to the back substrate 12 as described above, when the indium melts, the back substrate 12 is moved to the front surface until the support member 14 provided on the back substrate completely contacts the inner surface of the front substrate 11. It is pushed into the substrate 11 side. The spring 138 is slightly opened according to the amount of pushing at this time, and the release of the spring pressure is measured by the load cell 139 as a decrease in the applied pressure. This pressure data is input to the computer 121 in real time. During this time, the change in the applied pressure is as shown in FIG.

  In FIG. 9, point a indicates a point where indium melting starts and the spring 138 begins to open, and point b indicates a point where indium is completely melted and the support member 14 is completely in contact with the inner surface of the front substrate 11. . After point b, the back substrate 12 is not pushed further into the front substrate 11 side, so the applied pressure does not change. Therefore, the end of sealing can be determined by detecting the point b in the change in the applied pressure.

  Actually, since it is difficult to detect point b in real time, for example, the difference between the pressure applied several seconds ago and the current pressure is recorded on the computer sequentially, and the pressure difference is within a certain value for several seconds. If so, it is determined that the point b has been passed, and energization to the sealing layer is terminated. In this embodiment, the pressure difference between 5 seconds before and the present is measured as the slope of the pressure, and since this pressure difference was within 2 N for 5 seconds after 31 seconds from the start of pressurization, the indium was completely removed. It was determined that the movement of the back substrate was completed after melting. Then, 36 seconds after the start of pressurization, a signal indicating the end of energization was sent from the computer 121 to the power source 120 to stop energization of the sealing layer. Thereafter, by maintaining the pressurized state for several minutes, indium is cooled and solidified, and the front substrate 11 and the side wall 18 are sealed by the sealing layer 21. Thereby, the vacuum envelope 10 is formed.

  The sealed vacuum envelope 10 is sent to the cooling chamber 206, cooled to room temperature, and taken out from the unload chamber 207. The FED is completed through the above steps. The electrodes 30a and 30b may be removed after sealing.

  According to the FED manufacturing method and manufacturing apparatus as described above, the surface adsorbed gas can be sufficiently released by the combined use of baking and electron beam cleaning, and a getter film having excellent adsorption capability can be obtained. In addition, by performing energization sealing using indium, the sealing can be completed in a short time, so that a manufacturing method and a manufacturing apparatus excellent in mass productivity can be obtained.

  Further, by determining whether the indium is melted by changing the applied pressure and stopping the energization, sealing can be performed stably without being affected by variations in the indium filling amount. FIG. 10 shows changes in the applied pressure when two types of substrates c and d are sealed. Because the indium filling amount and the substrate temperature at the time of sealing varied, the time taken to melt the indium was different. However, it is possible to accurately determine when the indium has completely melted by measuring the change in the applied pressure (point b). The substrate c is energized for 45 seconds in a constant current mode of 140 A, and the substrate d is constant at 140 A. By energizing for 34 seconds in the current mode, both substrates could be stably sealed.

  As described above, by controlling the energization to the sealing material based on the change in the applied pressure at the time of sealing, even if the width or thickness of the conductive member varies from substrate to substrate, The change can be detected without being affected by the variation. Therefore, the energization heating conditions for the sealing material can be appropriately set for each substrate. As a result, it is possible to reliably bond in a short time while maintaining the entire substrate at a low temperature, and to manufacture an image display device capable of obtaining a stable and good image while maintaining the adsorption ability of the getter. be able to.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying constituent elements without departing from the scope of the invention in the implementation stage. Moreover, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

For example, as the low melting point sealing material having conductivity, instead of indium, a single metal selected from the group consisting of In, Ga, Pb, Sn and Zn, or In, Ga, Pb, Sn and Zn An alloy containing at least one element selected from the group consisting of can be used. In particular, it is desirable to use an alloy containing at least one element selected from the group consisting of In and Ga, In metal, and Ga metal. Since the low melting point sealing material containing In or Ga is excellent in wettability with a glass substrate mainly composed of SiO ₂ , the substrate on which the low melting point sealing material is disposed is glass mainly composed of SiO _2. Particularly suitable when formed. A preferable low melting point sealing material is an In metal or an alloy containing In. Examples of the alloy containing In include an alloy containing In and Ag, an alloy containing In and Sn, an alloy containing In and Zn, and an alloy containing In and Au.

  Further, the side wall of the envelope may be integrally formed with the rear substrate or the front substrate in advance. Needless to say, the outer shape of the vacuum envelope and the structure of the support member are not limited to the above-described embodiment. A matrix type light shielding layer and a phosphor layer may be formed, and a columnar support member having a cross-shaped cross section may be positioned and sealed with respect to the light shielding layer. As the electron-emitting device, a pn-type cold cathode device or a surface conduction electron-emitting device may be used. In the above embodiment, the step of bonding the substrates in a vacuum atmosphere has been described. However, the present invention can also be applied in other atmospheric environments. The present invention is not limited to the FED, but can also be applied to other image display devices such as SEDs and PDPs, or image display devices in which the inside of the envelope does not become a high vacuum.

The perspective view which shows the whole FED which concerns on embodiment of this invention. The perspective view which shows the internal structure of the said FED. FIG. 2 is a cross-sectional view taken along line AA in FIG. 1. The top view which expands and shows a part of phosphor screen of the FED. The top view which each shows the front substrate and back substrate which are used for manufacture of the said FED. The perspective view which shows the state which attached the electrode to the back substrate of the said FED. The figure which shows schematically the vacuum processing apparatus used for manufacture of the said FED. Sectional drawing which shows the assembly chamber of the said vacuum processing apparatus, and the state which has arrange | positioned the back substrate and front substrate in which indium is arrange | positioned facing. The figure which shows the change of the applied pressure of the board | substrate at the time of sealing. The figure which shows the change of the applied pressure at the time of sealing about a respectively different board | substrate.

Explanation of symbols

10 ... Vacuum envelope, 11 ... Front substrate, 12 ... Rear substrate,
14 ... support member, 16 ... phosphor screen, 18 ... side wall,
21, 21a, 21b ... sealing layer, 22 ... electron-emitting device,
30a, 30b ... electrodes, 100 ... vacuum processing device, 120 ... power supply,
131, 132 ... hot plate, 134 ... stage,
139 ... Load cell

Claims (7)

An image display device comprising: an envelope having a front substrate and a rear substrate, which are arranged to face each other with a gap therebetween, and whose peripheral portions are joined to each other; and a plurality of pixels provided in the envelope In the manufacturing method of
Along the inner peripheral edge of at least one of the front substrate and the rear substrate, a conductive sealing material is disposed to form a sealing layer,
After the front substrate and the rear substrate are arranged to face each other, a pressure is applied to at least one of the front substrate and the rear substrate to press the substrates in a direction approaching each other, and the sealing layer is sandwiched therebetween. Bringing at least a portion of the front substrate and the rear substrate into contact with each other;
In the state where the applied pressure is applied, the sealing layer is energized by heating and melting the sealing material, and the peripheral portions of the front substrate and the back substrate are joined together,
When energizing and heating the sealing material, the energization of the sealing material is controlled based on the change in the applied pressure.   Measuring means for measuring the applied pressure is provided on at least one of the front substrate and the back substrate, and during the energization heating of the sealing material, the applied pressure of the front substrate or the back substrate is detected and applied to the sealing material. The method for manufacturing an image display device according to claim 1, wherein energization is controlled.   3. The display device according to claim 2, wherein after the energization heating of the sealing material is started, a decrease in the applied pressure is detected, and the energization to the sealing material is controlled according to the applied pressure decrease. Production method.   The method for manufacturing an image display device according to claim 2, wherein after the energization heating of the sealing material is started, the energization to the sealing material is controlled by the inclination of the pressure change.   3. The method for manufacturing an image display device according to claim 2, wherein during the energization heating of the sealing material, the energization to the sealing material is stopped when the change is lost after the pressure is reduced. . An envelope having a front substrate and a rear substrate that are opposed to each other with a gap and bonded together, and a conductive material that is disposed along the inner peripheral edge of at least one of the front substrate and the rear substrate. In an apparatus for manufacturing an image display device comprising a sealing layer containing a material having a property, and a plurality of pixels provided in the envelope,
A power source for passing a current through the sealing layer, a support mechanism for supporting the front substrate and the back substrate opposite to each other, and a drive for pressing at least one of the front substrate and the back substrate toward the other substrate A mechanism, a measuring instrument that measures a change in pressure applied when pressing the one substrate, a power supply control unit that controls a current or voltage output from the power supply in accordance with the change in pressure, An apparatus for manufacturing an image display device, comprising:   The drive mechanism includes a stage that can be moved up and down, and a plurality of support pins that are erected on the stage and abut against the front substrate or the rear substrate via a spring, respectively. An apparatus for manufacturing an image display device according to claim 6.

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