KR20040090928A - Ｍｒａｍ 장치 제조 방법 - Google Patents

Ｍｒａｍ 장치 제조 방법 Download PDF

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Publication number
KR20040090928A
KR20040090928A KR1020040026404A KR20040026404A KR20040090928A KR 20040090928 A KR20040090928 A KR 20040090928A KR 1020040026404 A KR1020040026404 A KR 1020040026404A KR 20040026404 A KR20040026404 A KR 20040026404A KR 20040090928 A KR20040090928 A KR 20040090928A
Authority
KR
South Korea
Prior art keywords
plasma
substrate
layer
etching
argon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020040026404A
Other languages
English (en)
Korean (ko)
Inventor
첸다우 잉
시아오이 첸
춘 얀
아제이 쿠마르
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20040090928A publication Critical patent/KR20040090928A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09B—EDUCATIONAL OR DEMONSTRATION APPLIANCES; APPLIANCES FOR TEACHING, OR COMMUNICATING WITH, THE BLIND, DEAF OR MUTE; MODELS; PLANETARIA; GLOBES; MAPS; DIAGRAMS
    • G09B9/00—Simulators for teaching or training purposes
    • G09B9/02—Simulators for teaching or training purposes for teaching control of vehicles or other craft
    • G09B9/04—Simulators for teaching or training purposes for teaching control of vehicles or other craft for teaching control of land vehicles
    • G09B9/042—Simulators for teaching or training purposes for teaching control of vehicles or other craft for teaching control of land vehicles providing simulation in a real vehicle
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Business, Economics & Management (AREA)
  • Educational Administration (AREA)
  • Educational Technology (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
KR1020040026404A 2003-04-17 2004-04-17 Ｍｒａｍ 장치 제조 방법 Withdrawn KR20040090928A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/418,449 US6841484B2 (en) 2003-04-17 2003-04-17 Method of fabricating a magneto-resistive random access memory (MRAM) device
US10/418,449 2003-04-17

Publications (1)

Publication Number Publication Date
KR20040090928A true KR20040090928A (ko) 2004-10-27

Family

ID=32908356

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040026404A Withdrawn KR20040090928A (ko) 2003-04-17 2004-04-17 Ｍｒａｍ 장치 제조 방법

Country Status (4)

Country Link
US (1) US6841484B2 (https=)
EP (1) EP1469511A2 (https=)
JP (1) JP2004349687A (https=)
KR (1) KR20040090928A (https=)

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KR101066158B1 (ko) * 2009-05-27 2011-09-20 캐논 아네르바 가부시키가이샤 자기 소자의 제조 방법 및 제조 장치

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US7265404B2 (en) * 2005-08-30 2007-09-04 Magic Technologies, Inc. Bottom conductor for integrated MRAM
US7635546B2 (en) * 2006-09-15 2009-12-22 Applied Materials, Inc. Phase shifting photomask and a method of fabricating thereof
JP4978292B2 (ja) * 2007-04-19 2012-07-18 東ソー株式会社 ルテニウムのエッチング用組成物の除害方法
US9136463B2 (en) * 2007-11-20 2015-09-15 Qualcomm Incorporated Method of forming a magnetic tunnel junction structure
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JPWO2010026704A1 (ja) * 2008-09-04 2012-01-26 キヤノンアネルバ株式会社 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体
JPWO2010029701A1 (ja) * 2008-09-09 2012-02-02 キヤノンアネルバ株式会社 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体
WO2010064564A1 (ja) * 2008-12-01 2010-06-10 キヤノンアネルバ株式会社 磁気抵抗素子、その製造方法、および該製造方法に用いる記憶媒体
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US8912012B2 (en) 2009-11-25 2014-12-16 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
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US8642457B2 (en) 2011-03-03 2014-02-04 United Microelectronics Corp. Method of fabricating semiconductor device
US8501634B2 (en) 2011-03-10 2013-08-06 United Microelectronics Corp. Method for fabricating gate structure
US8519487B2 (en) 2011-03-21 2013-08-27 United Microelectronics Corp. Semiconductor device
US8324118B2 (en) 2011-03-28 2012-12-04 United Microelectronics Corp. Manufacturing method of metal gate structure
US8921238B2 (en) 2011-09-19 2014-12-30 United Microelectronics Corp. Method for processing high-k dielectric layer
US8426277B2 (en) 2011-09-23 2013-04-23 United Microelectronics Corp. Semiconductor process
US9000568B2 (en) 2011-09-26 2015-04-07 United Microelectronics Corp. Semiconductor structure and fabrication method thereof
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US9478627B2 (en) 2012-05-18 2016-10-25 United Microelectronics Corp. Semiconductor structure and process thereof
KR20140013201A (ko) * 2012-07-20 2014-02-05 삼성전자주식회사 반도체 소자의 제조 방법
US8501636B1 (en) 2012-07-24 2013-08-06 United Microelectronics Corp. Method for fabricating silicon dioxide layer
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US8951884B1 (en) 2013-11-14 2015-02-10 United Microelectronics Corp. Method for forming a FinFET structure
JP6285322B2 (ja) * 2014-08-26 2018-02-28 東京エレクトロン株式会社 被処理体をエッチングする方法
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) * 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
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US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
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Publication number Priority date Publication date Assignee Title
KR101066158B1 (ko) * 2009-05-27 2011-09-20 캐논 아네르바 가부시키가이샤 자기 소자의 제조 방법 및 제조 장치

Also Published As

Publication number Publication date
US6841484B2 (en) 2005-01-11
JP2004349687A (ja) 2004-12-09
EP1469511A2 (en) 2004-10-20
US20040209476A1 (en) 2004-10-21

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