KR20040054811A - 반도체 디바이스 및 그 제조 방법 - Google Patents

반도체 디바이스 및 그 제조 방법 Download PDF

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Publication number
KR20040054811A
KR20040054811A KR10-2004-7008218A KR20047008218A KR20040054811A KR 20040054811 A KR20040054811 A KR 20040054811A KR 20047008218 A KR20047008218 A KR 20047008218A KR 20040054811 A KR20040054811 A KR 20040054811A
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KR
South Korea
Prior art keywords
amorphous
surface layer
semiconductor
semiconductor device
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7008218A
Other languages
English (en)
Korean (ko)
Inventor
스톨크피터에이
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Publication of KR20040054811A publication Critical patent/KR20040054811A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR10-2004-7008218A 2001-11-30 2002-11-20 반도체 디바이스 및 그 제조 방법 Ceased KR20040054811A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01204625 2001-11-30
EP01204625.6 2001-11-30
PCT/IB2002/004881 WO2003046967A2 (en) 2001-11-30 2002-11-20 Method of forming a doped region in a semiconductor body comprising a step of amorphization by irradiation

Publications (1)

Publication Number Publication Date
KR20040054811A true KR20040054811A (ko) 2004-06-25

Family

ID=8181336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7008218A Ceased KR20040054811A (ko) 2001-11-30 2002-11-20 반도체 디바이스 및 그 제조 방법

Country Status (7)

Country Link
US (1) US6982212B2 (enExample)
EP (1) EP1459366A2 (enExample)
JP (1) JP2005510871A (enExample)
KR (1) KR20040054811A (enExample)
AU (1) AU2002348835A1 (enExample)
TW (1) TWI268576B (enExample)
WO (1) WO2003046967A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100732630B1 (ko) * 2006-02-01 2007-06-27 삼성전자주식회사 불순물 도핑 영역을 포함하는 반도체 소자 및 그 형성 방법

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3737504B2 (ja) * 2004-03-31 2006-01-18 松下電器産業株式会社 半導体装置の製造方法
FR2870988B1 (fr) * 2004-06-01 2006-08-11 Michel Bruel Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
JP2006066686A (ja) * 2004-08-27 2006-03-09 Matsushita Electric Ind Co Ltd 不純物導入方法および不純物導入装置
US7091097B1 (en) * 2004-09-03 2006-08-15 Advanced Micro Devices, Inc. End-of-range defect minimization in semiconductor device
US7615502B2 (en) * 2005-12-16 2009-11-10 Sandisk 3D Llc Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
KR101113533B1 (ko) * 2006-03-08 2012-02-29 어플라이드 머티어리얼스, 인코포레이티드 기판상에 형성되는 구조체의 열적 처리를 위한 장치 및 방법
US20070221640A1 (en) 2006-03-08 2007-09-27 Dean Jennings Apparatus for thermal processing structures formed on a substrate
US7745909B2 (en) * 2007-02-26 2010-06-29 International Business Machines Corporation Localized temperature control during rapid thermal anneal
US20090096066A1 (en) * 2007-10-10 2009-04-16 Anderson Brent A Structure and Method for Device-Specific Fill for Improved Anneal Uniformity
US7679166B2 (en) * 2007-02-26 2010-03-16 International Business Machines Corporation Localized temperature control during rapid thermal anneal
US7692275B2 (en) * 2007-02-26 2010-04-06 International Business Machines Corporation Structure and method for device-specific fill for improved anneal uniformity
US7759773B2 (en) 2007-02-26 2010-07-20 International Business Machines Corporation Semiconductor wafer structure with balanced reflectance and absorption characteristics for rapid thermal anneal uniformity
US8138066B2 (en) 2008-10-01 2012-03-20 International Business Machines Corporation Dislocation engineering using a scanned laser
ES2680648T3 (es) 2009-03-09 2018-09-10 1366 Technologies Inc. Procedimientos de fabricación de cuerpos semiconductores delgados a partir de material fundido
GB201112610D0 (en) * 2011-07-22 2011-09-07 Rec Wafer Norway As Heating a furnace for the growth of semiconductor material
JP5910855B2 (ja) * 2011-12-19 2016-04-27 サンケン電気株式会社 半導体装置の製造方法
US9597744B2 (en) * 2013-11-11 2017-03-21 Siemens Energy, Inc. Method for utilizing a braze material with carbon structures
EP3252800A1 (en) * 2016-05-31 2017-12-06 Laser Systems & Solutions of Europe Deep junction electronic device and process for manufacturing thereof
DE102016114264B4 (de) * 2016-08-02 2024-10-24 Infineon Technologies Ag Herstellungsverfahren einschliesslich einer aktivierung von dotierstoffen
JP6655791B2 (ja) * 2016-08-25 2020-02-26 パナソニックＩｐマネジメント株式会社 太陽電池セル及びその製造方法
CN108807276A (zh) * 2017-05-05 2018-11-13 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN112885715A (zh) * 2021-01-08 2021-06-01 中国科学院微电子研究所 一种半导体器件的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535220A (en) * 1981-11-10 1985-08-13 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Integrated circuits
JPH01256124A (ja) * 1988-04-05 1989-10-12 Ricoh Co Ltd Ｍｏｓ型半導体装置の製造方法
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
US5953615A (en) * 1999-01-27 1999-09-14 Advance Micro Devices Pre-amorphization process for source/drain junction
US6777317B2 (en) * 2001-08-29 2004-08-17 Ultratech Stepper, Inc. Method for semiconductor gate doping

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100732630B1 (ko) * 2006-02-01 2007-06-27 삼성전자주식회사 불순물 도핑 영역을 포함하는 반도체 소자 및 그 형성 방법

Also Published As

Publication number Publication date
AU2002348835A1 (en) 2003-06-10
WO2003046967A3 (en) 2003-10-16
JP2005510871A (ja) 2005-04-21
US20050003638A1 (en) 2005-01-06
US6982212B2 (en) 2006-01-03
TW200409293A (en) 2004-06-01
WO2003046967A2 (en) 2003-06-05
EP1459366A2 (en) 2004-09-22
TWI268576B (en) 2006-12-11

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