KR20030097881A - 반도체 메모리 장치의 제조 방법 - Google Patents
반도체 메모리 장치의 제조 방법 Download PDFInfo
- Publication number
- KR20030097881A KR20030097881A KR10-2003-7015025A KR20037015025A KR20030097881A KR 20030097881 A KR20030097881 A KR 20030097881A KR 20037015025 A KR20037015025 A KR 20037015025A KR 20030097881 A KR20030097881 A KR 20030097881A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- memory device
- layer
- manufacturing
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims abstract description 50
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 50
- 230000015654 memory Effects 0.000 claims description 49
- 238000001465 metallisation Methods 0.000 claims description 19
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 230000005291 magnetic effect Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 10
- 230000008021 deposition Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241001484259 Lacuna Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000005332 obsidian Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10124366.9 | 2001-05-18 | ||
DE10124366A DE10124366A1 (de) | 2001-05-18 | 2001-05-18 | Verfahren zum Herstellen einer Halbleiterspeichereinrichtung |
PCT/DE2002/001651 WO2002095827A2 (de) | 2001-05-18 | 2002-05-07 | Verfahren zum herstellen einer halbleiterspeichereinrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20030097881A true KR20030097881A (ko) | 2003-12-31 |
Family
ID=7685353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-7015025A KR20030097881A (ko) | 2001-05-18 | 2002-05-07 | 반도체 메모리 장치의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR20030097881A (de) |
CN (1) | CN1509498A (de) |
DE (1) | DE10124366A1 (de) |
WO (1) | WO2002095827A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10804320B2 (en) | 2017-06-05 | 2020-10-13 | Samsung Electronics Co., Ltd. | Insulation layer arrangement for magnetic tunnel junction device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6784091B1 (en) * | 2003-06-05 | 2004-08-31 | International Business Machines Corporation | Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices |
US11437431B2 (en) | 2020-01-15 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company Limited | Memory device with flat-top bottom electrodes and methods for forming the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5838608A (en) * | 1997-06-16 | 1998-11-17 | Motorola, Inc. | Multi-layer magnetic random access memory and method for fabricating thereof |
WO2000004555A2 (de) * | 1998-07-15 | 2000-01-27 | Infineon Technologies Ag | Speicherzellenanordnung, bei der ein elektrischer widerstand eines speicherelements eine information darstellt und durch ein magnetfeld beeinflussbar ist, und verfahren zu deren herstellung |
WO2000052701A1 (de) * | 1999-02-26 | 2000-09-08 | Infineon Technologies Ag | Speicherzellenanordnung und verfahren zu deren herstellung |
US6165803A (en) * | 1999-05-17 | 2000-12-26 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
DE10043159A1 (de) * | 2000-09-01 | 2002-03-21 | Infineon Technologies Ag | Speicherzellenanordnung und Verfahren zu deren Herstellung |
-
2001
- 2001-05-18 DE DE10124366A patent/DE10124366A1/de not_active Withdrawn
-
2002
- 2002-05-07 WO PCT/DE2002/001651 patent/WO2002095827A2/de active Application Filing
- 2002-05-07 KR KR10-2003-7015025A patent/KR20030097881A/ko not_active Application Discontinuation
- 2002-05-07 CN CNA028101804A patent/CN1509498A/zh active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10804320B2 (en) | 2017-06-05 | 2020-10-13 | Samsung Electronics Co., Ltd. | Insulation layer arrangement for magnetic tunnel junction device |
US11462584B2 (en) | 2017-06-05 | 2022-10-04 | Samsung Electronics Co., Ltd. | Insulation layer arrangement for magnetic tunnel junction device |
Also Published As
Publication number | Publication date |
---|---|
DE10124366A1 (de) | 2002-11-28 |
CN1509498A (zh) | 2004-06-30 |
WO2002095827A2 (de) | 2002-11-28 |
WO2002095827A3 (de) | 2003-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |