KR20030094049A - 광기록재생방법과 광기록매체 - Google Patents
광기록재생방법과 광기록매체 Download PDFInfo
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- KR20030094049A KR20030094049A KR10-2003-0034734A KR20030034734A KR20030094049A KR 20030094049 A KR20030094049 A KR 20030094049A KR 20030034734 A KR20030034734 A KR 20030034734A KR 20030094049 A KR20030094049 A KR 20030094049A
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- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
- G11B7/24035—Recording layers
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- G11B7/002—Recording, reproducing or erasing systems characterised by the shape or form of the carrier
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- G11B7/2433—Metals or elements of groups 13, 14, 15 or 16 of the Periodic System, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
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Abstract
Description
Claims (11)
- 기판상에 적어도 모재와 보조재를 존재시키고, 외부로부터 기록되어야 할 정보에 따라서 강도 변조된 에너지를 가하고, 상기 모재 및 보조재의 적어도 한쪽을 상태 변화시키는 것에 의해 광학 특성을 변화시키고, 또 이 광학특성의 변화에 의한 반사율의 변화를 판독하고, 상기 정보를 재생하는 것을 특징으로 하는 광기록재생방법.
- 기판상에 적어도 상태변화를 일으키는 모재와 보조재를 인접하여 존재시키고, 상기 모재 및 보조재에 외부로부터 기록되어야 할 정보에 따라서 강도 변조된 에너지를 가하고, 상기 모재 및 보조재의 적어도 한쪽을 상태 변화시키는 것에 의해 광학 특성을 변화시키고, 또 이 광학특성의 변화에 따른 반사율의 변화를 판독하고, 상기 정보를 재생하는 것을 특징으로 하는 광기록재생방법.
- 제 1 항에 있어서,상기 모재를 막형상으로 하고, 상기 보조재를 인접하여 존재시키는 것을 특징으로 하는 광기록재생방법.
- 제 2 항에 있어서,상기 모재를 막형상으로 하고, 상기 보조재를 인접하여 존재시키는 것을 특징으로 하는 광기록재생방법.
- 기판상에 적어도 상태변화를 일으키는 모재와 보조재를 혼합하여 막형상으로 존재시키고, 여기에 외부로부터 기록되어야 할 정보에 따라서 강도 변조된 에너지를 가하고, 상기 모재 및 보조재의 적어도 한쪽을 상태 변화시키는 것에 의해 광학특성을 변화시키고, 또 이 광학특성의 변화를 판독하고, 상기 정보를 재생하는 것을 특징으로 하는 광기록재생방법.
- 제 1 항에 있어서,상기 모재를 막형상으로 하고, 상기 보조재를 혼합시키는 것을 특징으로 하는 광기록재생방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 모재중에 그 정상 상태를 안정화시키기 위한 안정화재를 존재시키는 것을 특징으로 하는 광기록재생방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,레이저빔을 조사하는 것에 의해 상기 에너지를 가하는 것을 특징으로 하는 광기록재생방법.
- 제 7 항에 있어서,레이저빔을 조사하는 것에 의해 상기 에너지를 가하는 것을 특징으로 하는 광기록재생방법.
- 기판과, 기판상에 설치된 기록층으로 이루어지며, 상기 기록층은 외부로부터 기록되어야 할 정보에 따라서 강도 변조된 에너지에 의해 상태변화를 일으키는 모재와, 보조재를 갖는 것을 특징으로 하는 광기록매체.
- 제 10 항에 있어서,상기 모재중에 그 정상 상태를 안정화시키기 위한 안정화재를 존재시킨 것을 특징으로 하는 광기록매체.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002162114 | 2002-06-03 | ||
JPJP-P-2002-00162114 | 2002-06-03 | ||
JPJP-P-2003-00034916 | 2003-02-13 | ||
JP2003034916 | 2003-02-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030094049A true KR20030094049A (ko) | 2003-12-11 |
KR100731472B1 KR100731472B1 (ko) | 2007-06-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020030034734A KR100731472B1 (ko) | 2002-06-03 | 2003-05-30 | 광기록재생방법과 광기록매체 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7154836B2 (ko) |
EP (1) | EP1398767B1 (ko) |
JP (1) | JP4139740B2 (ko) |
KR (1) | KR100731472B1 (ko) |
CN (1) | CN1479296A (ko) |
AT (1) | ATE479985T1 (ko) |
DE (1) | DE60333974D1 (ko) |
TW (1) | TWI263993B (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7952984B2 (en) * | 2004-04-22 | 2011-05-31 | Tdk Corporation | Optical recording medium and method of recording and reproducing of optical recording medium |
TWI237259B (en) * | 2004-12-07 | 2005-08-01 | Ind Tech Res Inst | Write-once optical recording mediums |
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
US7410910B2 (en) * | 2005-08-31 | 2008-08-12 | Micron Technology, Inc. | Lanthanum aluminum oxynitride dielectric films |
US20070154674A1 (en) * | 2005-12-29 | 2007-07-05 | Imation Corp. | Recordable optical media with thermal buffer layer |
US7972974B2 (en) | 2006-01-10 | 2011-07-05 | Micron Technology, Inc. | Gallium lanthanide oxide films |
US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
US7563730B2 (en) * | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
US7776765B2 (en) | 2006-08-31 | 2010-08-17 | Micron Technology, Inc. | Tantalum silicon oxynitride high-k dielectrics and metal gates |
US7432548B2 (en) * | 2006-08-31 | 2008-10-07 | Micron Technology, Inc. | Silicon lanthanide oxynitride films |
US7544604B2 (en) | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US20080057659A1 (en) * | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Hafnium aluminium oxynitride high-K dielectric and metal gates |
JP4764858B2 (ja) * | 2007-01-30 | 2011-09-07 | 株式会社リコー | 光記録媒体、スパッタリングターゲット及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS57205193A (en) * | 1981-06-12 | 1982-12-16 | Fuji Photo Film Co Ltd | Optical information recording medium |
KR890004230B1 (ko) * | 1984-08-24 | 1989-10-27 | 가부시끼가이샤 도오시바 | 광(光) 디스크 메모리 |
JPS62204442A (ja) | 1986-03-03 | 1987-09-09 | Toshiba Corp | 光記録媒体および光記録媒体の記録方法 |
US5635267A (en) * | 1992-09-17 | 1997-06-03 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium of phase change type having variably grooved tracks depending on their radial locations |
TW484126B (en) * | 1999-03-26 | 2002-04-21 | Matsushita Electric Ind Co Ltd | Manufacturing and recording regeneration method for information record medium |
US6967050B2 (en) * | 2000-07-05 | 2005-11-22 | Sony Corporation | Optical recording medium and a method of manufacturing the same |
JP4281232B2 (ja) * | 2000-08-31 | 2009-06-17 | ソニー株式会社 | 光記録媒体とその製造方法 |
-
2003
- 2003-05-21 TW TW092113752A patent/TWI263993B/zh not_active IP Right Cessation
- 2003-05-29 US US10/446,839 patent/US7154836B2/en not_active Expired - Lifetime
- 2003-05-30 KR KR1020030034734A patent/KR100731472B1/ko active IP Right Grant
- 2003-06-02 AT AT03012152T patent/ATE479985T1/de not_active IP Right Cessation
- 2003-06-02 JP JP2003156561A patent/JP4139740B2/ja not_active Expired - Fee Related
- 2003-06-02 EP EP03012152A patent/EP1398767B1/en not_active Expired - Lifetime
- 2003-06-02 DE DE60333974T patent/DE60333974D1/de not_active Expired - Lifetime
- 2003-06-03 CN CNA031408060A patent/CN1479296A/zh active Pending
Also Published As
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US7154836B2 (en) | 2006-12-26 |
US20040027966A1 (en) | 2004-02-12 |
JP2004296055A (ja) | 2004-10-21 |
JP4139740B2 (ja) | 2008-08-27 |
CN1479296A (zh) | 2004-03-03 |
EP1398767B1 (en) | 2010-09-01 |
EP1398767A3 (en) | 2007-04-04 |
ATE479985T1 (de) | 2010-09-15 |
EP1398767A2 (en) | 2004-03-17 |
TWI263993B (en) | 2006-10-11 |
DE60333974D1 (de) | 2010-10-14 |
KR100731472B1 (ko) | 2007-06-21 |
TW200400495A (en) | 2004-01-01 |
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