KR20030056252A - 폴리실리콘 박막 제조방법 - Google Patents
폴리실리콘 박막 제조방법 Download PDFInfo
- Publication number
- KR20030056252A KR20030056252A KR1020010086427A KR20010086427A KR20030056252A KR 20030056252 A KR20030056252 A KR 20030056252A KR 1020010086427 A KR1020010086427 A KR 1020010086427A KR 20010086427 A KR20010086427 A KR 20010086427A KR 20030056252 A KR20030056252 A KR 20030056252A
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- South Korea
- Prior art keywords
- layer
- polysilicon
- region
- thin film
- active layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229920001296 polysiloxane Polymers 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 42
- 229920005591 polysilicon Polymers 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 238000002425 crystallisation Methods 0.000 claims abstract description 27
- 230000008025 crystallization Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000003054 catalyst Substances 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 10
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 29
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229910005883 NiSi Inorganic materials 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052759 nickel Inorganic materials 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 61
- 229910021417 amorphous silicon Inorganic materials 0.000 description 20
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910008045 Si-Si Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006411 Si—Si Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (4)
- 제 1 영역과, 제 1 영역의 양쪽 외곽부인 제 2 영역이 정의된 절연기판 상에 위치하며, 니켈 실리사이드(NiSiX)를 결정화 촉매로 이용하는 결정화 공정을 거쳐 형성된 폴리실리콘층을 형성하는 단계와;상기 폴리실리콘층을 패터닝하여, 상기 제 1 영역 상에 액티브층을 형성하는 단계와;상기 액티브층이 형성된 기판의 제 2 영역에 잔존하는 니켈 실리사이드를 불산(HF)과 과산화수소(H202) 혼합용액으로 이루어진 에천트를 이용하여 식각하는 단계와;상기 식각 단계를 거친 기판 상에, 게이트 전극, 소스 및 드레인 전극을 차례대로 형성하는 단계를 포함하는 폴리실리콘 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 에천트는 3 중량% ~ 10 중량%의 불산(HF)과 1 중량% ~ 5 중량%의 과산화수소(H202)를 포함하는 에천트인 폴리실리콘 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 액티브층을 형성하는 단계는, 상기 폴리실리콘층 상에 PR층(photo resist layer) 도포, 노광, 현상을 거쳐 형성된 PR층 패턴을 마스크로 하여 폴리실리콘층을 건식 식각하는 단계를 포함하는 폴리실리콘 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 결정화 공정은, 열 에너지 및 전기장을 이용하는 FE-MIC(Field Enhanced Metal Induced Crystallization) 방법에 의한 것인 폴리실리콘 박막트랜지스터의 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0086427A KR100466964B1 (ko) | 2001-12-27 | 2001-12-27 | 폴리실리콘 박막 제조방법 |
US10/319,636 US6946402B2 (en) | 2001-12-27 | 2002-12-16 | Fabricating method of polycrystalline silicon thin film transistor with improved electrical characteristics |
US11/095,484 US20050167634A1 (en) | 2001-12-27 | 2005-04-01 | Etchant for nickel silicide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0086427A KR100466964B1 (ko) | 2001-12-27 | 2001-12-27 | 폴리실리콘 박막 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030056252A true KR20030056252A (ko) | 2003-07-04 |
KR100466964B1 KR100466964B1 (ko) | 2005-01-24 |
Family
ID=19717718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0086427A KR100466964B1 (ko) | 2001-12-27 | 2001-12-27 | 폴리실리콘 박막 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (2) | US6946402B2 (ko) |
KR (1) | KR100466964B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019201475A1 (de) | 2018-04-19 | 2019-10-24 | Linde Aktiengesellschaft | Verfahren zum betreiben eines wärmetauschers, anordnung mit einem wärmetauscher und luftbearbeitungsanlage mit einer entsprechenden anordnung |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6884736B2 (en) * | 2002-10-07 | 2005-04-26 | Taiwan Semiconductor Manufacturing Co, Ltd. | Method of forming contact plug on silicide structure |
DE102006031105A1 (de) * | 2006-07-05 | 2008-01-10 | Wacker Chemie Ag | Verfahren zur Reinigung von Polysilicium-Bruch |
CN101500351A (zh) * | 2008-01-30 | 2009-08-05 | 奇美电子股份有限公司 | 有机电致发光装置及其制造方法 |
KR20140039863A (ko) * | 2012-09-25 | 2014-04-02 | 삼성디스플레이 주식회사 | 다결정 규소막 형성 방법, 다결정 규소막을 포함하는 박막 트랜지스터 및 표시 장치 |
TW201529473A (zh) * | 2013-06-24 | 2015-08-01 | Dow Corning | 自矽組成物移除矽化物之方法以及以此等方法製造之產品 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4717681A (en) * | 1986-05-19 | 1988-01-05 | Texas Instruments Incorporated | Method of making a heterojunction bipolar transistor with SIPOS |
JP3295679B2 (ja) * | 1995-08-04 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5798540A (en) * | 1997-04-29 | 1998-08-25 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with InAlAsSb/AlSb barrier |
EP0989962A4 (en) * | 1997-06-13 | 2005-03-09 | Mattson Technology Ip Inc | PROCESSES FOR PROCESSING SEMICONDUCTOR WAFERS |
DE19741465A1 (de) * | 1997-09-19 | 1999-03-25 | Wacker Chemie Gmbh | Polykristallines Silicium |
US6294441B1 (en) * | 1998-08-18 | 2001-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6380007B1 (en) * | 1998-12-28 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP4531177B2 (ja) * | 1998-12-28 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6624086B1 (en) * | 1999-09-15 | 2003-09-23 | Texas Instruments Incorporated | Effective solution and process to wet-etch metal-alloy films in semiconductor processing |
KR20010063597A (ko) * | 1999-12-23 | 2001-07-09 | 박종섭 | 박막 트랜지스터 제조 방법 |
US6821827B2 (en) * | 1999-12-28 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6492283B2 (en) * | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
TWI263336B (en) * | 2000-06-12 | 2006-10-01 | Semiconductor Energy Lab | Thin film transistors and semiconductor device |
JP4803625B2 (ja) * | 2001-09-04 | 2011-10-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2001
- 2001-12-27 KR KR10-2001-0086427A patent/KR100466964B1/ko active IP Right Grant
-
2002
- 2002-12-16 US US10/319,636 patent/US6946402B2/en not_active Expired - Lifetime
-
2005
- 2005-04-01 US US11/095,484 patent/US20050167634A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019201475A1 (de) | 2018-04-19 | 2019-10-24 | Linde Aktiengesellschaft | Verfahren zum betreiben eines wärmetauschers, anordnung mit einem wärmetauscher und luftbearbeitungsanlage mit einer entsprechenden anordnung |
Also Published As
Publication number | Publication date |
---|---|
US6946402B2 (en) | 2005-09-20 |
KR100466964B1 (ko) | 2005-01-24 |
US20030124779A1 (en) | 2003-07-03 |
US20050167634A1 (en) | 2005-08-04 |
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