KR20030042427A - 고체 촬상 장치 및 그 제조 방법 - Google Patents
고체 촬상 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20030042427A KR20030042427A KR1020020073032A KR20020073032A KR20030042427A KR 20030042427 A KR20030042427 A KR 20030042427A KR 1020020073032 A KR1020020073032 A KR 1020020073032A KR 20020073032 A KR20020073032 A KR 20020073032A KR 20030042427 A KR20030042427 A KR 20030042427A
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- South Korea
- Prior art keywords
- solid
- state imaging
- imaging device
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- transmitting member
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- 238000003384 imaging method Methods 0.000 title claims description 100
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229920005989 resin Polymers 0.000 claims abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims description 42
- 238000001746 injection moulding Methods 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 11
- 239000007787 solid Substances 0.000 claims description 5
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 32
- 229920005992 thermoplastic resin Polymers 0.000 description 12
- 238000007789 sealing Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000004954 Polyphthalamide Substances 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Structure Of Printed Boards (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (7)
- 고체 촬상 장치로서:절연성 수지로 형성되고, 관통 개구부를 갖는 구조체;상기 구조체의 표면에 형성된 배선 패턴;상기 배선 패턴에 접속되고 상기 관통 개구부를 덮도록 상기 구조체에 장착된 고체 촬상 소자; 및상기 고체 촬상 소자와 대향하고 상기 관통 개구부를 덮도록 상기 구조체에 장착된 투광성 부재를 포함하고,상기 구조체는 상기 투광성 부재가 상기 구조체에 장착된 투광성 부재 장착부에 구비된, 상기 관통 개구부로 관통하는 관통홈을 포함하는 것을 특징으로 하는 고체 촬상 장치.
- 제 1항에 있어서, 상기 구조체는 상기 배선 패턴이 형성된 각부, 및 상기 각부 위에 설치된 원통 형상의 몸체부를 포함하고, 상기 관통 개구부는 상기 몸체부와 각부 사이에 있는 것을 특징으로 하는 고체 촬상 장치.
- 제 1항에 있어서, 상기 투광성 부재는 광학 필터인 것을 특징으로 하는 고체 촬상 장치.
- 제 3항에 있어서, 상기 광학 필터는 열팽창계수가 절연성 수지의 열팽창계수보다 작은 재료로 형성되는 것을 특징으로 하는 고체 촬상 장치.
- 고체 촬상 장치의 제조 방법으로서:관통 개구부, 고체 촬상 소자가 상기 관통 개구부에 장착되는 고체 촬상 소자 접합부, 투광성 부재가 상기 고체 촬상 소자 접합부로부터 소정의 거리로 이격되어 상기 관통 개구부를 덮도록 장착되는 투광성 부재 장착부, 및 상기 투광성 부재 장착부에 구비된 상기 관통 개구부로 관통하는 관통홈을 포함하는 구조체를 절연성 수지로 성형하는 구조체 성형 단계;상기 구조체상에 배선 패턴을 형성하는 배선부 형성 단계;투광성 부재를 상기 투광성 부재 장착부에 장착하는 투광성 부재 장착 단계; 및상기 투광성 부재가 장착된 상기 구조체의 고체 촬상 소자 접합부에 고체 촬상 소자를 장착하는 고체 촬상 소자 접합 단계를 포함하는, 고체 촬상 장치의 제조 방법.
- 제 5항에 있어서, 상기 구조체 성형 단계는 상기 구조체를 사출 성형에 의해 열가소성 절연 수지로 형성하는 단계인 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
- 제 5항에 있어서, 상기 관통홈은 상기 열가소성 절연 수지의 사출 성형 방향에 수직한 방향으로 상기 관통 개구부를 향하여 서로 대향하는 위치에 형성되는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001357987A JP3646933B2 (ja) | 2001-11-22 | 2001-11-22 | 固体撮像装置およびその製造方法 |
JPJP-P-2001-00357987 | 2001-11-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030042427A true KR20030042427A (ko) | 2003-05-28 |
KR100839145B1 KR100839145B1 (ko) | 2008-06-19 |
Family
ID=19169247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020073032A KR100839145B1 (ko) | 2001-11-22 | 2002-11-22 | 고체 촬상 장치 및 그 제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6707125B2 (ko) |
JP (1) | JP3646933B2 (ko) |
KR (1) | KR100839145B1 (ko) |
CN (1) | CN1422071A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100808962B1 (ko) * | 2005-03-02 | 2008-03-04 | 샤프 가부시키가이샤 | 고체 촬상 장치 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4004705B2 (ja) * | 2000-02-29 | 2007-11-07 | 松下電器産業株式会社 | 撮像装置と撮像装置組立方法 |
US7012315B1 (en) * | 2000-11-01 | 2006-03-14 | Micron Technology, Inc. | Frame scale package using contact lines through the elements |
FR2824953B1 (fr) * | 2001-05-18 | 2004-07-16 | St Microelectronics Sa | Boitier semi-conducteur optique a lentille incorporee et blindage |
KR100514917B1 (ko) * | 2002-05-07 | 2005-09-14 | 미쓰이 가가쿠 가부시키가이샤 | 고체 촬상소자 장착용 패키지 |
JP3813944B2 (ja) * | 2003-04-28 | 2006-08-23 | 松下電器産業株式会社 | 撮像装置 |
JP3981348B2 (ja) * | 2003-05-30 | 2007-09-26 | 松下電器産業株式会社 | 撮像装置およびその製造方法 |
KR100609012B1 (ko) * | 2004-02-11 | 2006-08-03 | 삼성전자주식회사 | 배선기판 및 이를 이용한 고체 촬상용 반도체 장치 |
US7262405B2 (en) * | 2004-06-14 | 2007-08-28 | Micron Technology, Inc. | Prefabricated housings for microelectronic imagers |
CN100586253C (zh) * | 2005-11-09 | 2010-01-27 | 皇家飞利浦电子股份有限公司 | 包装、包装载体及其制造方法、诊断设备及其制造方法 |
JPWO2007096992A1 (ja) * | 2006-02-24 | 2009-07-09 | パナソニック株式会社 | 撮像装置及び携帯端末装置 |
JP2008092532A (ja) * | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 撮像装置とその製造方法および携帯電話装置 |
JP2008148222A (ja) * | 2006-12-13 | 2008-06-26 | Matsushita Electric Ind Co Ltd | 固体撮像装置とその製造方法 |
US20080165257A1 (en) * | 2007-01-05 | 2008-07-10 | Micron Technology, Inc. | Configurable pixel array system and method |
US7812869B2 (en) * | 2007-05-11 | 2010-10-12 | Aptina Imaging Corporation | Configurable pixel array system and method |
KR100867523B1 (ko) * | 2007-07-06 | 2008-11-10 | 삼성전기주식회사 | 카메라 모듈 패키지 |
CN101689534A (zh) * | 2007-07-19 | 2010-03-31 | 株式会社藤仓 | 半导体封装体及其制造方法 |
US20090179290A1 (en) * | 2008-01-15 | 2009-07-16 | Huang Shuangwu | Encapsulated imager packaging |
US20090206431A1 (en) * | 2008-02-20 | 2009-08-20 | Micron Technology, Inc. | Imager wafer level module and method of fabrication and use |
US9197796B2 (en) * | 2011-11-23 | 2015-11-24 | Lg Innotek Co., Ltd. | Camera module |
CN103178023B (zh) * | 2013-02-28 | 2016-11-16 | 格科微电子(上海)有限公司 | 混合基板、半导体器件的封装方法和封装结构 |
CN104076475A (zh) * | 2013-03-29 | 2014-10-01 | 鸿富锦精密工业(深圳)有限公司 | 摄像头模块及其制造方法 |
WO2017094777A1 (ja) * | 2015-12-02 | 2017-06-08 | マイクロモジュールテクノロジー株式会社 | 光学装置及び光学装置の製造方法 |
JP2017139258A (ja) * | 2016-02-01 | 2017-08-10 | ソニー株式会社 | 撮像素子パッケージ及び撮像装置 |
US10109753B2 (en) * | 2016-02-19 | 2018-10-23 | X-Celeprint Limited | Compound micro-transfer-printed optical filter device |
KR20190088812A (ko) | 2018-01-19 | 2019-07-29 | 삼성전자주식회사 | 팬-아웃 센서 패키지 |
JP7191373B2 (ja) * | 2018-11-16 | 2022-12-19 | マイクロモジュールテクノロジー株式会社 | 光学装置、分光センサモジュール、撮像モジュール、及び光学装置の製造方法 |
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JPH06343231A (ja) * | 1993-05-31 | 1994-12-13 | Nishishiba Electric Co Ltd | 系統連系保護装置 |
JPH0946909A (ja) * | 1995-07-27 | 1997-02-14 | Nissin Electric Co Ltd | 並列多重連系分散電源の単独運転検出装置 |
JP3302898B2 (ja) * | 1997-01-30 | 2002-07-15 | 東芝アイティー・コントロールシステム株式会社 | 発電設備の系統連系保護装置 |
JP3397608B2 (ja) * | 1996-12-26 | 2003-04-21 | 西芝電機株式会社 | 発電設備の系統連系保護装置 |
US5821532A (en) * | 1997-06-16 | 1998-10-13 | Eastman Kodak Company | Imager package substrate |
JP2001119006A (ja) * | 1999-10-19 | 2001-04-27 | Sony Corp | 撮像デバイス及びその製造方法 |
US6396116B1 (en) * | 2000-02-25 | 2002-05-28 | Agilent Technologies, Inc. | Integrated circuit packaging for optical sensor devices |
JP3751829B2 (ja) * | 2001-01-16 | 2006-03-01 | 株式会社東芝 | 発電設備の系統連系保護装置 |
-
2001
- 2001-11-22 JP JP2001357987A patent/JP3646933B2/ja not_active Expired - Lifetime
-
2002
- 2002-11-21 US US10/301,256 patent/US6707125B2/en not_active Expired - Lifetime
- 2002-11-22 KR KR1020020073032A patent/KR100839145B1/ko active IP Right Grant
- 2002-11-22 CN CN02150599A patent/CN1422071A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100808962B1 (ko) * | 2005-03-02 | 2008-03-04 | 샤프 가부시키가이샤 | 고체 촬상 장치 |
Also Published As
Publication number | Publication date |
---|---|
US6707125B2 (en) | 2004-03-16 |
KR100839145B1 (ko) | 2008-06-19 |
US20030094665A1 (en) | 2003-05-22 |
JP3646933B2 (ja) | 2005-05-11 |
JP2003158252A (ja) | 2003-05-30 |
CN1422071A (zh) | 2003-06-04 |
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