KR20030038491A - 반사층 부착 조명 장치 및 액정 표시 장치 - Google Patents
반사층 부착 조명 장치 및 액정 표시 장치 Download PDFInfo
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- KR20030038491A KR20030038491A KR1020020068752A KR20020068752A KR20030038491A KR 20030038491 A KR20030038491 A KR 20030038491A KR 1020020068752 A KR1020020068752 A KR 1020020068752A KR 20020068752 A KR20020068752 A KR 20020068752A KR 20030038491 A KR20030038491 A KR 20030038491A
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- liquid crystal
- light emitting
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- reflective layer
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 90
- 238000005286 illumination Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 25
- 238000009413 insulation Methods 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 276
- 238000010586 diagram Methods 0.000 description 33
- 230000005525 hole transport Effects 0.000 description 18
- 238000002347 injection Methods 0.000 description 17
- 239000007924 injection Substances 0.000 description 17
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000000284 extract Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 4
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910004286 SiNxOy Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- LLQHSBBZNDXTIV-UHFFFAOYSA-N 6-[5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-4,5-dihydro-1,2-oxazol-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC1CC(=NO1)C1=CC2=C(NC(O2)=O)C=C1 LLQHSBBZNDXTIV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- -1 or the like Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
종래품 | 본 발명품 | |
백라이트 표면 평균 휘도 cd/㎡반투과 반사층 투과 후의 표면 평균 휘도 cd/㎡발광부 휘도 cd/㎠전압 v소비 전류 ㎃소비 전력 ㎽비고 | 100010010003. 550175전체면 발광 | 10010010003.5517.5부분 발광 |
실시예 | 1 | 2 | 3 | 4 | ||
구성 | 두께 | 도 5 | 도 6 | 도 7 | 도 8 | |
기판 | 투명 기판 | 0.1-1.1㎜ | 102 | 102 | 102 | 102 |
양극층 | 투명 전극 | 100-200㎚ | 106 | 106 | 106 | 106 |
유기 EL층 | 정공 주입층정공 수송층발광층 | 30-100㎚10-40㎚10-40㎚ | 110110110 | 110110110 | 110110110 | 110110110 |
음극층 | 제1 음극층제2 음극층 | 0.1-2㎚100-200㎚ | 112112 | 112112 | 112112 | 112112 |
절연층 | 절연층 | 100-200㎚ | 108 | 108 | 없음 | 없음 |
반사층 | 반사층 | 100-200㎚ | 104 | 104 | 104 | 104 |
실시예 | 5 | 6 | 7 | 8 | ||
구성 | 두께 | 도 9 | 도 10 | 도 11 | 도 12 | |
기판 | 투명 기판 | 0.1-1.1㎜ | 102 | 102 | 102 | 102 |
양극층 | 투명 전극 | 100-200㎚ | 106 | 106 | 106 | 106 |
유기 EL층 | 정공 주입층정공 수송층발광층 | 30-100㎚10-40㎚10-40㎚ | 110110110 | 110110110 | 110110110 | 110110110 |
음극층 | 제1 음극층제2 음극층 | 0.1-2㎚100-200㎚ | 112112 | 112112 | 112112 | 112112 |
절연층 | 절연층 | 100-200㎚ | 없음 | 없음 | 108 | 없음 |
반사층 | 반사층 | 100-200㎚ | 104 | 104 | 104 | 104 |
실시예 | 9 | 10 | 11 | 12 | ||
구성 | 두께 | 도 13 | 도 14 | 도 15 | 도 16 | |
기판 | 기판 | 0.1-1.1㎜ | 102 | 102 | 102 | 102 |
반사층 | 반사층 | 50-200㎚ | 114 | 114 | 114 | 114 |
양극층 | 투명 전극 | 100-200㎚ | 106 | 106 | 106 | 106 |
유기 EL층 | 정공 주입층정공 수송층발광층 | 30-100㎚10-40㎚10-40㎚ | 110110110 | 110110110 | 110110110 | 110110110 |
투명 음극층 | 투명 제1 음극층투명 제2 음극층투명 제3 음극층 | 0.1-2㎚5-10㎚100-200㎚ | 115115115 | 115115115 | 150150*1 | 115115115 |
절연층 | 절연층 | 100-200㎚ | 108 | 108 | 108 | 108 |
반사층 | 반사층 | 100-200㎚ | 104 | 104 | 151(A1) | 104 |
실시예 | 13 | 14 | 15 | 16 | ||
구성 | 두께 | 도 17 | 도 18 | 도 19 | 도 20 | |
기판 | 기판 | 0.1-1.1㎜ | 102 | 102 *2 | 102 *2 | 102 *2 |
반사층 | 반사층 | 50-200㎚ | 114 | 114 | 114 | 114 |
양극층 | 투명 전극 | 100-200㎚ | 106 | 106 | 106 | 106 |
유기 EL층 | 정공 주입층정공 수송층발광층 | 30-100㎚10-40㎚10-40㎚ | 110110110 | 110110110 | 110110110 | 110110110 |
투명 음극층 | 투명 제1 음극층투명 제2 음극층투명 제3 음극층 | 0.1-2㎚5-10㎚100-200㎚ | 150150*1 | 115115115 | 115115115 | 150150*1 |
절연층 | 절연층 | 100-200㎚ | 108 | 108 | 108 | 108 |
반사층 | 반사층 | 100-200㎚ | 151(A1) | 104 | 104 | 151(A1) |
실시예 | 17 | 18 | ||
구성 | 두께 | 도 21 | 도 22 | |
기판 | 기판 | 0.1-1.1㎜ | 102 *2 | 102 *2 |
반사층 | 반사층 | 50-200㎚ | 114 | 114 |
양극층 | 투명 전극 | 100-200㎚ | 106 | 106 |
유기 EL층 | 정공 주입층정공 수송층발광층 | 30-100㎚10-40㎚10-40㎚ | 110110110 | 110110110 |
투명 음극층 | 투명 제1 음극층투명 제2 음극층투명 제3 음극층 | 0.1-2㎚5-10㎚100-200㎚ | 115115115 | 150150*1 |
절연층 | 절연층 | 100-200㎚ | 108 | 108 |
반사층 | 반사층 | 100-200㎚ | 104 | 151(A1) |
Claims (11)
- 반사층 부착 조명 장치에 있어서,반사부와 투과부가 형성된 반투과 반사층과, 상기 투과부에 대응하는 부위에 형성된 발광 소자를 구비하고, 상기 발광 소자의 발광하는 광이 상기 투과부로부터 출사하는 것을 특징으로 하는 반사층 부착 조명 장치.
- 제1항에 있어서, 상기 발광 소자가 발광층으로서 EL층을 갖는 EL 소자이며, 상기 투과부에 대응하는 위치의 EL층만이 발광하는 것을 특징으로 하는 반사층 부착 조명 장치.
- 제1항에 있어서, 상기 발광 소자가 발광층으로서 EL층을 갖는 EL 소자이며, 상기 투과부에 대응하는 위치에만 EL층이 형성된 것을 특징으로 하는 반사층 부착 조명 장치.
- 제2항에 있어서, 상기 EL층을 사이에 끼도록 형성된 양극층과 음극층을 구비하고, 상기 양극층과 상기 음극층의 적어도 한쪽이 상기 반사부에 대응하는 위치에는 형성되어 있지 않은 것을 특징으로 하는 반사층 부착 조명 장치.
- 제2항에 있어서, 상기 EL층을 사이에 끼도록 형성된 양극층과 음극층을 구비하고, 상기 반사부에 대응하는 위치에는, 상기 양극층과 상기 음극층의 적어도 한쪽과 상기 EL층 사이에 절연층이 형성된 것을 특징으로 하는 반사층 부착 조명 장치.
- 제5항에 있어서, 상기 투명부가 상기 음극층과 상기 양극층의 어느 한쪽의 기능을 구비하는 것을 특징으로 하는 반사층 부착 조명 장치.
- 제2항에 있어서, 상기 EL 소자는 EL층에 전압을 인가하기 위한 음극층과 양극층을 구비하고, 상기 투과부에 대응하는 위치에 형성된 상기 음극층과 상기 양극층의 어느 한쪽이 절연층으로 구분된 것을 특징으로 하는 반사층 부착 조명 장치.
- 제1항 내지 제7항 중 어느 한 항에 있어서, 상기 투과부가, 상기 반투과 반사층에 형성된 복수의 관통구멍인 것을 특징으로 하는 반사층 부착 조명 장치.
- 액정 패널과, 상기 액정 패널의 배면에 설치된 조명 장치를 갖는 액정 표시 장치에 있어서, 상기 조명 장치는, 반사부와 투과부가 형성된 반투과 반사층과, 상기 투과부에 대응하는 부위에 형성된 발광 소자를 구비하고, 상기 발광 소자의 발광하는 광이 상기 투과부로부터 출사하여 상기 액정 패널을 조사하는 것을 특징으로 하는 액정 표시 장치.
- 제9항에 있어서, 상기 발광 소자가 발광층으로서 EL층을 갖는 EL 소자이며, 상기 투과부에 대응하는 위치의 EL층만이 발광하는 것을 특징으로 하는 액정 표시 장치.
- 제10항에 있어서, 상기 액정 패널의 하부 글라스를 상기 EL 소자의 봉지 기판으로 한 것을 특징으로 하는 액정 표시 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00345246 | 2001-11-09 | ||
JP2001345246A JP3933915B2 (ja) | 2001-11-09 | 2001-11-09 | 反射層付き照明装置及び液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
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KR20030038491A true KR20030038491A (ko) | 2003-05-16 |
KR100850156B1 KR100850156B1 (ko) | 2008-08-04 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020020068752A KR100850156B1 (ko) | 2001-11-09 | 2002-11-07 | 반사층 부착 조명 장치 및 액정 표시 장치 |
Country Status (5)
Country | Link |
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US (1) | US20030102801A1 (ko) |
JP (1) | JP3933915B2 (ko) |
KR (1) | KR100850156B1 (ko) |
CN (1) | CN1417627A (ko) |
TW (1) | TW567379B (ko) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7772756B2 (en) * | 2003-08-01 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device including a dual emission panel |
EP2276088B1 (en) | 2003-10-03 | 2018-02-14 | Semiconductor Energy Laboratory Co, Ltd. | Light emitting element, and light emitting device using the light emitting element |
CN1295551C (zh) * | 2004-03-15 | 2007-01-17 | 信利半导体有限公司 | 变色液晶显示器及其制作方法 |
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KR20060007161A (ko) * | 2004-07-19 | 2006-01-24 | 엘지전자 주식회사 | 액정표시장치 |
CN100465749C (zh) * | 2005-07-18 | 2009-03-04 | 财团法人工业技术研究院 | 具透反式透膜的电泳显示器及制作方法 |
WO2016151429A1 (en) | 2015-03-23 | 2016-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Display panel and information processing device |
DE112016000030T5 (de) | 2015-04-13 | 2016-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigefeld, Datenprozessor und Herstellungsverfahren für ein Anzeigefeld |
JP6815122B2 (ja) | 2015-08-07 | 2021-01-20 | 株式会社半導体エネルギー研究所 | 表示パネル |
JP6791661B2 (ja) | 2015-08-07 | 2020-11-25 | 株式会社半導体エネルギー研究所 | 表示パネル |
WO2017055971A1 (en) | 2015-10-01 | 2017-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
WO2017068454A1 (en) | 2015-10-23 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, and data processing device |
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US5226723A (en) * | 1992-05-11 | 1993-07-13 | Chen Der Jong | Light emitting diode display |
US5804918A (en) * | 1994-12-08 | 1998-09-08 | Nippondenso Co., Ltd. | Electroluminescent device having a light reflecting film only at locations corresponding to light emitting regions |
JPH10124561A (ja) * | 1996-10-23 | 1998-05-15 | Toshiba Corp | システム構築業務支援装置 |
US6195140B1 (en) * | 1997-07-28 | 2001-02-27 | Sharp Kabushiki Kaisha | Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region |
US6075317A (en) * | 1998-07-30 | 2000-06-13 | Alliedsignal Inc. | Electroluminescent device having increased brightness and resolution and method of fabrication |
JP3767264B2 (ja) * | 1999-08-25 | 2006-04-19 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
JP2001135479A (ja) * | 1999-11-08 | 2001-05-18 | Canon Inc | 発光素子、並びにそれを用いた画像読取装置、情報処理装置及びディスプレイ装置 |
JP3849399B2 (ja) * | 2000-03-27 | 2006-11-22 | カシオ計算機株式会社 | 液晶表示装置 |
-
2001
- 2001-11-09 JP JP2001345246A patent/JP3933915B2/ja not_active Expired - Fee Related
-
2002
- 2002-10-25 TW TW091125245A patent/TW567379B/zh not_active IP Right Cessation
- 2002-11-07 KR KR1020020068752A patent/KR100850156B1/ko active IP Right Grant
- 2002-11-08 CN CN02149921A patent/CN1417627A/zh active Pending
- 2002-11-08 US US10/290,951 patent/US20030102801A1/en not_active Abandoned
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Publication number | Publication date |
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TW567379B (en) | 2003-12-21 |
KR100850156B1 (ko) | 2008-08-04 |
CN1417627A (zh) | 2003-05-14 |
JP3933915B2 (ja) | 2007-06-20 |
US20030102801A1 (en) | 2003-06-05 |
JP2003149641A (ja) | 2003-05-21 |
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