KR20030011636A - 미소 치수 측정 장치 - Google Patents
미소 치수 측정 장치 Download PDFInfo
- Publication number
- KR20030011636A KR20030011636A KR1020020044047A KR20020044047A KR20030011636A KR 20030011636 A KR20030011636 A KR 20030011636A KR 1020020044047 A KR1020020044047 A KR 1020020044047A KR 20020044047 A KR20020044047 A KR 20020044047A KR 20030011636 A KR20030011636 A KR 20030011636A
- Authority
- KR
- South Korea
- Prior art keywords
- measurement
- image information
- recorded
- image
- measurement object
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title claims abstract description 133
- 238000003384 imaging method Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 6
- 238000001454 recorded image Methods 0.000 abstract description 2
- 230000006870 function Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003708 edge detection Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70655—Non-optical, e.g. atomic force microscope [AFM] or critical dimension scanning electron microscope [CD-SEM]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
Claims (3)
- 측정 대상물을 올려놓는 스테이지를 가지는 현미경과, 이 현미경으로 확대된 상기 측정 대상물의 확대 상을 촬영하는 촬영 장치와, 상기 측정 대상물에 따른 측정 조건을 기록하는 기록 장치를 가지고, 상기 기록된 측정 조건에 근거하여, 상기 촬영 장치로부터 출력한 화상 정보를 근거로 상기 측정 대상물의 치수를 측정하는 미소 치수 측정 장치에 있어서,사전에 상기 기록된 측정 조건에 따라 상기 측정 대상물을 촬영하여 얻어진 견본 화상 정보를 상기 기록 장치에 기록하고,상기 기록된 측정 조건에 근거하여 상기 측정 대상물을 측정할 때에 상기 기록된 견본 화상 정보의 표시를 실행하는 것을 특징으로 하는미소 치수 측정 장치.
- 제 1 항에 있어서,상기 기록된 측정 조건에 근거하여 상기 측정 장치의 각종 설정이 실행되고, 상기 각종 설정 중 적어도 어느 하나의 설정 내용을 추가로 변경 설정 가능하게 하는 것을 특징으로 하는미소 치수 측정 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 견본 화상 정보와 상기 측정 조건을 동시에 상기 기록 장치에 기록하는 것을 특징으로 하는미소 치수 측정 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001232961 | 2001-07-31 | ||
JPJP-P-2001-00232961 | 2001-07-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030011636A true KR20030011636A (ko) | 2003-02-11 |
KR100556013B1 KR100556013B1 (ko) | 2006-03-03 |
Family
ID=19064796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020044047A KR100556013B1 (ko) | 2001-07-31 | 2002-07-26 | 미소 치수 측정 장치 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100556013B1 (ko) |
CN (1) | CN1214230C (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101971779B (zh) * | 2010-09-15 | 2013-03-27 | 大连海洋大学 | 水产动物浮游幼体尺寸的测量方法 |
CN105526865B (zh) * | 2016-02-17 | 2018-04-24 | 江汉大学 | 劳埃德镜干涉微小尺度测量装置 |
CN108981577A (zh) * | 2018-06-25 | 2018-12-11 | 苏州健雄职业技术学院 | 一种压电陶瓷压电微位移测量方法 |
CN111816580A (zh) * | 2020-07-16 | 2020-10-23 | 宁波江丰电子材料股份有限公司 | 一种晶圆保持环花纹凸台宽度的测量方法及测量系统 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2825875B2 (ja) * | 1989-10-06 | 1998-11-18 | 富士通株式会社 | 寸法検査方法 |
KR960005919A (ko) * | 1994-07-26 | 1996-02-23 | 오노 시게오 | 패턴 검사 방법 및 장치 |
KR100244918B1 (ko) * | 1997-01-16 | 2000-02-15 | 윤종용 | 반도체 패턴 검사장치 및 그 검사방법 |
KR100296668B1 (ko) * | 1998-06-01 | 2001-10-26 | 윤종용 | 웨이퍼검사장비및이를이용한웨이퍼검사방법 |
KR20010039251A (ko) * | 1999-10-29 | 2001-05-15 | 윤종용 | 정상패턴과 칩의 패턴을 비교하므로써 레티클 패턴의 결함을 검사하는 방법 |
-
2002
- 2002-07-26 KR KR1020020044047A patent/KR100556013B1/ko active IP Right Grant
- 2002-07-31 CN CNB021278644A patent/CN1214230C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1400450A (zh) | 2003-03-05 |
CN1214230C (zh) | 2005-08-10 |
KR100556013B1 (ko) | 2006-03-03 |
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