KR20020083934A - 이온빔 조사장치 및 이 장치용 플라즈마 점화방법 - Google Patents
이온빔 조사장치 및 이 장치용 플라즈마 점화방법 Download PDFInfo
- Publication number
- KR20020083934A KR20020083934A KR1020020022853A KR20020022853A KR20020083934A KR 20020083934 A KR20020083934 A KR 20020083934A KR 1020020022853 A KR1020020022853 A KR 1020020022853A KR 20020022853 A KR20020022853 A KR 20020022853A KR 20020083934 A KR20020083934 A KR 20020083934A
- Authority
- KR
- South Korea
- Prior art keywords
- plasma
- ion beam
- substrate
- plasma generator
- generator
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims description 68
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000005468 ion implantation Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000011109 contamination Methods 0.000 abstract description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 15
- 230000001629 suppression Effects 0.000 abstract description 3
- 238000011017 operating method Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 30
- 238000012423 maintenance Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 238000011144 upstream manufacturing Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 241000251468 Actinopterygii Species 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (6)
- 기판에 이온빔을 주사하여 처리를 실시하는 이온빔 조사장치로서,이온빔이 이온생성용 가스와 충돌할 때 2차전자를 발생시시키는 진공실과;이 진공실에 연결된 플라즈마 발생장치를; 구비하며, 이 플라즈마 발생장치는:고주파방전을 발생시키는 고주파방전 발생기와;이온생성용 가스를 플라즈마 발생장치로 도입하는 이온생성용 가스 도입기와;상기 플라즈마 발생장치와 그라운드 사이에 접속된 직류전원을; 구비하고,직류전원은 플라즈마 발생장치에 정(正)전압을 인가하여 2차전자를 플라즈마 발생장치로 도입하도록 하며, 고주파방전발생기가 진공실로 고주파를 도입할 때 2차전지가 진공실에서 발생될 때 도입된 2차전지는 점화 트리거로서 플라즈마 발생기에서 플라즈마를 점화하는 것을 특징으로 하는 이온빔조사장치.
- 제1항에 있어서,직류전원은 플라즈마 발생장치에 정전압V을 인가하여 각 2차전자에 에너지를 부여하고, 플라즈마 생성용 가스에 포함된 원자 또는 분자의 제1이온화 에너지E1과 각 2차전자의 에너지E2에 의해 정의되는 정전압은 다음식V > (E1 - E2)/e[V] 를 만족하는 것을 특징으로 하는 이온빔 조사장치.
- 제1항에 있어서,2차전자가 플라즈마를 점화한 후, 직류전원은 스위칭에 의해 플라즈마에서 전자량을 제어하여 플라즈마 발생장치에 부전압을 인가하는 것을 특징으로 하는 이온빔 조사장치.
- 이온빔 조사장치의 운전방법으로서,(a) 이온빔이 진공실에서 이동할 때, 직류전원에 의해 플라즈마 발생기로 정전압을 인가하는 단계와;(b) 정전압에 의해 진공실로부터 플라즈마 발생장치로 2차전지를 인도하며, 여기서 2차전지는 정전압에 의해 플라즈마 발생장치에서 진공실로 흘러나온 플라즈마 생성용 가스와 이온빔을 충돌시켜 생성시키는 단계와;(c) 고주파발생기가 고주파를 인도할 때 점화 트리거로서의 2차전지에 의해 플라즈마를 점화하는 단계와;(d) 기판에 이온빔을 조사하는 단계와;(e) 기판에 플라즈마를 조사하는 동안 기판의 대전을 억제하기 위해 기판으로 플라즈마를 인가하는 단계를:구비하는 것을 특징으로 하는 이온빔 조사장치의 운전방법.
- 제4항에 있어서,(f) 이온 빔이 기판에 조사되는 동안 플라즈마의 양을 제어하기 위해 스위칭으로 직류전원에 의해 플라즈마 발생장치에 부전압을 인가하는 단계를;더 포함하는 것을 특징으로 하는 이온빔 조사장치의 운전방법.
- 반도체 기판에 이온조사에 의해 이온주입을 행하는 반도체 디바이스를 제조 방법으로서,(a) 이온빔이 진공실에서 이동할 때, 직류전원에 의해 플라즈마 발생기로 정전압을 인가하는 단계와;(b) 정전압에 의해 진공실로부터 플라즈마 발생장치로 2차전지를 인도하며, 여기서 2차전지는 정전압에 의해 플라즈마 발생장치에서 진공실로 흘러나온 플라즈마 생성용 가스와 이온빔을 충돌시켜 생성시키는 단계와;(c) 고주파발생기가 플라즈마 발생장치에 고주파를 인도할 때 점화 트리거로서의 2차전지에 의해 플라즈마를 점화하고, 반도체기판에 이온빔을 조사하는 단계와;(d) 반도체기판에 플라즈마를 조사하는 동안 기판의 대전을 억제하기 위해반도체기판으로 플라즈마를 공급하는 단계를:구비하는 것을 특징으로 하는 반도체 디바이스 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00129014 | 2001-04-26 | ||
JP2001129014A JP3758520B2 (ja) | 2001-04-26 | 2001-04-26 | イオンビーム照射装置および関連の方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020083934A true KR20020083934A (ko) | 2002-11-04 |
KR100454457B1 KR100454457B1 (ko) | 2004-10-28 |
Family
ID=18977607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0022853A KR100454457B1 (ko) | 2001-04-26 | 2002-04-26 | 이온빔 조사장치 및 이 장치용 플라즈마 점화방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6548381B2 (ko) |
JP (1) | JP3758520B2 (ko) |
KR (1) | KR100454457B1 (ko) |
CN (1) | CN1190821C (ko) |
GB (1) | GB2380314B (ko) |
SG (1) | SG104316A1 (ko) |
TW (1) | TW556246B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100819020B1 (ko) * | 2006-11-27 | 2008-04-02 | 세메스 주식회사 | 플라즈마 처리 장치 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173757A (ja) * | 2001-12-04 | 2003-06-20 | Nissin Electric Co Ltd | イオンビーム照射装置 |
DE10303683B4 (de) * | 2003-01-30 | 2007-03-08 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Verringern der durch Kontamination hervorgerufenen Prozessfluktuationen während des Ionenimplantierens |
US7105840B2 (en) * | 2005-02-03 | 2006-09-12 | Axcelis Technologies, Inc. | Ion source for use in an ion implanter |
CN101124349A (zh) * | 2005-12-06 | 2008-02-13 | 新明和工业株式会社 | 等离子体成膜装置 |
US20070137576A1 (en) * | 2005-12-19 | 2007-06-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for providing an inductively coupled radio frequency plasma flood gun |
US20070170995A1 (en) * | 2006-01-20 | 2007-07-26 | Dutton David T | Plasma generating devices and methods for using the same |
JP4001185B1 (ja) | 2007-03-06 | 2007-10-31 | 日新イオン機器株式会社 | プラズマ発生装置 |
KR101307111B1 (ko) * | 2010-08-24 | 2013-09-11 | 닛신 이온기기 가부시기가이샤 | 플라즈마 발생 장치 |
US8664861B1 (en) | 2010-08-24 | 2014-03-04 | Nissin Ion Equipment Co., Ltd. | Plasma generator |
US8471476B2 (en) | 2010-10-08 | 2013-06-25 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement |
US20160233055A1 (en) * | 2015-02-06 | 2016-08-11 | Mks Instruments Inc. | Apparatus and Method for Metastable Enhanced Plasma Ignition |
CN108269488A (zh) * | 2018-02-08 | 2018-07-10 | 丹阳市鼎新机械设备有限公司 | 一种镜片用粒子轰击式防伪机 |
WO2023276127A1 (ja) * | 2021-07-01 | 2023-01-05 | 株式会社日立ハイテク | 荷電粒子線装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2704438B2 (ja) * | 1989-09-04 | 1998-01-26 | 東京エレクトロン株式会社 | イオン注入装置 |
US5466929A (en) * | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
JPH07153405A (ja) | 1993-11-30 | 1995-06-16 | Nissin Electric Co Ltd | プラズマ応用装置 |
US5565036A (en) * | 1994-01-19 | 1996-10-15 | Tel America, Inc. | Apparatus and method for igniting plasma in a process module |
JP3174699B2 (ja) | 1994-11-08 | 2001-06-11 | 三菱重工業株式会社 | 磁場中の高周波放電の点火装置 |
JPH10149897A (ja) * | 1996-11-21 | 1998-06-02 | Sumitomo Metal Ind Ltd | プラズマ処理方法 |
GB2325561B (en) * | 1997-05-20 | 2001-10-17 | Applied Materials Inc | Apparatus for and methods of implanting desired chemical species in semiconductor substrates |
GB9710380D0 (en) * | 1997-05-20 | 1997-07-16 | Applied Materials Inc | Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
JP3608416B2 (ja) * | 1999-02-02 | 2005-01-12 | 日新電機株式会社 | プラズマ源 |
-
2001
- 2001-04-26 JP JP2001129014A patent/JP3758520B2/ja not_active Expired - Lifetime
-
2002
- 2002-04-24 SG SG200202486A patent/SG104316A1/en unknown
- 2002-04-25 GB GB0209404A patent/GB2380314B/en not_active Expired - Fee Related
- 2002-04-25 US US10/131,085 patent/US6548381B2/en not_active Expired - Lifetime
- 2002-04-26 TW TW091108680A patent/TW556246B/zh not_active IP Right Cessation
- 2002-04-26 CN CNB021184690A patent/CN1190821C/zh not_active Expired - Lifetime
- 2002-04-26 KR KR10-2002-0022853A patent/KR100454457B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100819020B1 (ko) * | 2006-11-27 | 2008-04-02 | 세메스 주식회사 | 플라즈마 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20020164845A1 (en) | 2002-11-07 |
US6548381B2 (en) | 2003-04-15 |
GB0209404D0 (en) | 2002-06-05 |
CN1383182A (zh) | 2002-12-04 |
GB2380314A (en) | 2003-04-02 |
CN1190821C (zh) | 2005-02-23 |
SG104316A1 (en) | 2004-06-21 |
KR100454457B1 (ko) | 2004-10-28 |
JP3758520B2 (ja) | 2006-03-22 |
TW556246B (en) | 2003-10-01 |
JP2002324511A (ja) | 2002-11-08 |
GB2380314B (en) | 2003-10-08 |
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