SG104316A1 - Ion beam irradiation apparatus and method of igniting a plasma for the same - Google Patents
Ion beam irradiation apparatus and method of igniting a plasma for the sameInfo
- Publication number
- SG104316A1 SG104316A1 SG200202486A SG200202486A SG104316A1 SG 104316 A1 SG104316 A1 SG 104316A1 SG 200202486 A SG200202486 A SG 200202486A SG 200202486 A SG200202486 A SG 200202486A SG 104316 A1 SG104316 A1 SG 104316A1
- Authority
- SG
- Singapore
- Prior art keywords
- igniting
- plasma
- same
- ion beam
- beam irradiation
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001129014A JP3758520B2 (ja) | 2001-04-26 | 2001-04-26 | イオンビーム照射装置および関連の方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG104316A1 true SG104316A1 (en) | 2004-06-21 |
Family
ID=18977607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200202486A SG104316A1 (en) | 2001-04-26 | 2002-04-24 | Ion beam irradiation apparatus and method of igniting a plasma for the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US6548381B2 (ko) |
JP (1) | JP3758520B2 (ko) |
KR (1) | KR100454457B1 (ko) |
CN (1) | CN1190821C (ko) |
GB (1) | GB2380314B (ko) |
SG (1) | SG104316A1 (ko) |
TW (1) | TW556246B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173757A (ja) * | 2001-12-04 | 2003-06-20 | Nissin Electric Co Ltd | イオンビーム照射装置 |
DE10303683B4 (de) * | 2003-01-30 | 2007-03-08 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Verringern der durch Kontamination hervorgerufenen Prozessfluktuationen während des Ionenimplantierens |
US7105840B2 (en) * | 2005-02-03 | 2006-09-12 | Axcelis Technologies, Inc. | Ion source for use in an ion implanter |
US20090159441A1 (en) * | 2005-12-06 | 2009-06-25 | Shinmaywa Industries, Ltd. | Plasma Film Deposition System |
US20070137576A1 (en) * | 2005-12-19 | 2007-06-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for providing an inductively coupled radio frequency plasma flood gun |
US20070170995A1 (en) * | 2006-01-20 | 2007-07-26 | Dutton David T | Plasma generating devices and methods for using the same |
KR100819020B1 (ko) * | 2006-11-27 | 2008-04-02 | 세메스 주식회사 | 플라즈마 처리 장치 |
JP4001185B1 (ja) | 2007-03-06 | 2007-10-31 | 日新イオン機器株式会社 | プラズマ発生装置 |
KR101307111B1 (ko) | 2010-08-24 | 2013-09-11 | 닛신 이온기기 가부시기가이샤 | 플라즈마 발생 장치 |
US8664861B1 (en) | 2010-08-24 | 2014-03-04 | Nissin Ion Equipment Co., Ltd. | Plasma generator |
US8471476B2 (en) | 2010-10-08 | 2013-06-25 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement |
US20160233055A1 (en) * | 2015-02-06 | 2016-08-11 | Mks Instruments Inc. | Apparatus and Method for Metastable Enhanced Plasma Ignition |
CN108269488A (zh) * | 2018-02-08 | 2018-07-10 | 丹阳市鼎新机械设备有限公司 | 一种镜片用粒子轰击式防伪机 |
JPWO2023276127A1 (ko) * | 2021-07-01 | 2023-01-05 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2704438B2 (ja) * | 1989-09-04 | 1998-01-26 | 東京エレクトロン株式会社 | イオン注入装置 |
US5466929A (en) * | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
JPH07153405A (ja) | 1993-11-30 | 1995-06-16 | Nissin Electric Co Ltd | プラズマ応用装置 |
US5565036A (en) * | 1994-01-19 | 1996-10-15 | Tel America, Inc. | Apparatus and method for igniting plasma in a process module |
JP3174699B2 (ja) | 1994-11-08 | 2001-06-11 | 三菱重工業株式会社 | 磁場中の高周波放電の点火装置 |
JPH10149897A (ja) * | 1996-11-21 | 1998-06-02 | Sumitomo Metal Ind Ltd | プラズマ処理方法 |
GB2325561B (en) * | 1997-05-20 | 2001-10-17 | Applied Materials Inc | Apparatus for and methods of implanting desired chemical species in semiconductor substrates |
GB9710380D0 (en) * | 1997-05-20 | 1997-07-16 | Applied Materials Inc | Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
JP3608416B2 (ja) * | 1999-02-02 | 2005-01-12 | 日新電機株式会社 | プラズマ源 |
-
2001
- 2001-04-26 JP JP2001129014A patent/JP3758520B2/ja not_active Expired - Lifetime
-
2002
- 2002-04-24 SG SG200202486A patent/SG104316A1/en unknown
- 2002-04-25 US US10/131,085 patent/US6548381B2/en not_active Expired - Lifetime
- 2002-04-25 GB GB0209404A patent/GB2380314B/en not_active Expired - Fee Related
- 2002-04-26 KR KR10-2002-0022853A patent/KR100454457B1/ko active IP Right Grant
- 2002-04-26 CN CNB021184690A patent/CN1190821C/zh not_active Expired - Lifetime
- 2002-04-26 TW TW091108680A patent/TW556246B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3758520B2 (ja) | 2006-03-22 |
TW556246B (en) | 2003-10-01 |
KR100454457B1 (ko) | 2004-10-28 |
CN1190821C (zh) | 2005-02-23 |
GB0209404D0 (en) | 2002-06-05 |
JP2002324511A (ja) | 2002-11-08 |
KR20020083934A (ko) | 2002-11-04 |
US6548381B2 (en) | 2003-04-15 |
CN1383182A (zh) | 2002-12-04 |
GB2380314A (en) | 2003-04-02 |
US20020164845A1 (en) | 2002-11-07 |
GB2380314B (en) | 2003-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2002359718A1 (en) | Apparatus and method for treating a workpiece using plasma generated from microwave radiation | |
AU2003287275A1 (en) | Methods and apparatus for generating high-density plasma | |
EP1361782A4 (en) | PLASMA DEVICE AND PLASMA PRODUCTION METHOD | |
GB2389228B (en) | Ion beam processing method and apparatus therefor | |
GB2380314B (en) | Ion beam irradiation apparatus and method of igniting a plasma for the same | |
AU2002326159A1 (en) | Plasma treating apparatus and plasma treating method | |
AU2001265416A1 (en) | Method and apparatus for beam forming | |
GB2386468B (en) | Electron beam apparatus and electron beam adjusting method | |
AU2002352291A1 (en) | Method and apparatus for determining the intensity distribution of a radiation field | |
GB2365203B (en) | Operation method of ion source and ion beam irradiation apparatus | |
AU2002363514A1 (en) | Irradiation apparatus and method | |
AU2002357601A1 (en) | Plasma treatment apparatus and plasma generation method | |
GB2389226B (en) | Ion beam irradiation apparatus for supressing charge up of substrate and method for the same | |
AU2003216550A1 (en) | Method and apparatus for ion beam coating | |
GB2375226B (en) | Ion implantation apparatus suited for low energy ion implantation and tuning method therefor | |
GB2389455B (en) | Ion implantation apparatus equipped with plasma shower and ion implantation method | |
AU1301300A (en) | The method and the apparatus for plasma generation | |
AU2001237845A1 (en) | Plasma ion source and method | |
GB2375882B (en) | Electron beam irradiation system and electron beam irradiation method | |
GB0127084D0 (en) | Method and device for irradiating an ION beam and related method and device thereof | |
GB2372510B (en) | Apparatus and method for generating indium ion beam | |
GB2375881B (en) | Electron beam irradiation system and electron beam irradiation method | |
SG106660A1 (en) | Apparatus for implanting an ion on a target and method for the same | |
AU4875701A (en) | Method and apparatus for electron beam irradiation | |
AU2002335988A1 (en) | Ion imlantation method and apparatus |