KR20020007683A - Semiconductor package and its manufacturing method - Google Patents

Abstract

PURPOSE: A semiconductor package and a manufacturing method thereof are provided to manufacture a thin semiconductor package by offsetting the thickness of the first semiconductor chip by the thickness of a substrate like a lead or circuit board, and to improve a heat radiation capacity by exposing one surface of the first and/or second semiconductor chips to the exterior of an encapsulating material. CONSTITUTION: A plurality of input/output pads(4) are formed in the center of the second surface and in the inner circumference of the first semiconductor chip(2), including the first and second surfaces(2a,2b). The second semiconductor chip(6) has the first and second surfaces(6a,6b). A plurality of input/output pads(8) are formed on the first surface of the second semiconductor chip having the first and second surfaces, connected to the input/output pads formed in the center of the first semiconductor chip by using the first electrical connection unit. The substrate has the first and second surfaces in the outer circumference of the first semiconductor chip, connected to the input/output pads formed in the inner circumference of the first semiconductor chip by using the second electrical connection unit. The encapsulating material(40) encapsulates the first semiconductor chip, the second semiconductor chip, the first electrical connection unit, the second electrical connection unit and the substrate.

Description

Semiconductor package and its manufacturing method

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package and a method for manufacturing the same, and more particularly, to a semiconductor package and a method for manufacturing the same, which can realize high capacity by stacking semiconductor chips and excellent heat dissipation performance.

In general, the semiconductor package not only protects the semiconductor chip from the external environment, but also means that the electrical signal between the semiconductor chip and the motherboard is easily exchanged.

Recently, a multilayer semiconductor package having high functionality by stacking a plurality of semiconductor chips inside the semiconductor package has been released. Such a conventional multilayer semiconductor package 100 'is shown in FIG.

As shown, a circuit pattern 20 'having a bond finger 20a' and a ball land 20b 'is formed on the upper and lower surfaces of the resin layer 18'. The surface of the circuit board 16 'is coated with a cover coat 23'. In addition, the first semiconductor chip 2 'is bonded to the center of the upper surface of the circuit board 16' with the adhesive, and the second semiconductor chip 6 'is attached to the upper surface of the first semiconductor chip 2'. It is bonded by. Of course, a plurality of input / output pads 4 'and 8' are formed on the upper surfaces of the first semiconductor chip 2 'and the second semiconductor chip 6'. The I / O pads 4 'and 8' of the first semiconductor chip 2 'and the second semiconductor chip 6' are bonded fingers 20a 'of the circuit patterns 20' formed on the circuit board 16 ', respectively. ) Is connected to the conductive wire 60 '. In addition, the upper surface of the first semiconductor chip 2 ', the second semiconductor chip 6', the conductive wire 60 ', and the circuit board 16' is sealed with an encapsulant 40 '. A plurality of conductive balls 50 'are fused to the ball lands 20b' among the circuit patterns 20 'formed on the bottom surface of the circuit board 16', and the conductive balls 50 'are subsequently fixed on the motherboard. Is connected to the pattern.

In the semiconductor package 100 ', the electrical signals of the first semiconductor chip 2' and the second semiconductor chip 6 'are transmitted to the conductive wire 60', the bond finger 20a 'of the circuit board 16', It is exchanged with the motherboard through the conductive via hole 20c ', the ball land 20b' and the conductive ball 50 '.

However, such a conventional semiconductor package is the first semiconductor chip and the second semiconductor chip are sequentially stacked on the upper surface of the circuit board of a certain thickness, the thickness of the first semiconductor chip and the second semiconductor chip is added to the thickness of the circuit board. There is a disadvantage that the overall thickness is thick.

In addition, the amount of heat dissipation is increased when mounting a highly functional semiconductor chip in recent years, there is a problem that causes a malfunction of the semiconductor package because there is no means for properly discharging such heat.

In addition, since the loop height of the conductive wire connecting the input / output pad of the second semiconductor chip and the bond finger of the circuit board is large, the wire sweeping or the wire short during the manufacturing process of the semiconductor package is large. There is a problem that occurs frequently.

In addition, the circuit board is formed with a circuit pattern on the upper and lower surfaces around the resin layer, and the upper and lower circuit patterns are connected by conductive via holes, and the surface of the circuit pattern has a complicated structure coated with a cover coat, There is a problem that the price of the semiconductor package using the circuit board is expensive compared to the lead, the conventional circuit film and the circuit tape.

In addition, since both the first semiconductor chip and the second semiconductor chip are electrically connected to the circuit board by conductive wires, the manufacturing time (wire bonding time) takes a long time, and the defect rate is also increased.

Accordingly, the present invention has been made to solve the above-described conventional problems, to provide a semiconductor package and a manufacturing method of a thin overall thickness by canceling the thickness of the first semiconductor chip by the thickness of the lead or circuit board.

Another object of the present invention is to provide a semiconductor package having excellent heat dissipation performance by exposing one surface of a first semiconductor chip or a second semiconductor chip to the outside and a method of manufacturing the same.

It is still another object of the present invention to connect a second semiconductor chip to the upper surface of the first semiconductor chip by using flip chip technology, and thus, a semiconductor package and a method of manufacturing the same, which can solve the problems of conventional wire sweeping or wire short due to loop height. To provide.

It is still another object of the present invention to provide a semiconductor package and a method of manufacturing the same, which can provide a low-cost semiconductor package using a circuit board such as a lead or resin layer, film, tape, etc., which is relatively inexpensive.

It is still another object of the present invention to provide a semiconductor package and a method of manufacturing the same, which can shorten manufacturing time by using tap bonding, lead bonding, or gang bonding techniques on input / output pads of a first semiconductor chip.

1 is a cross-sectional view showing a conventional semiconductor package.

2A and 2B are a cross-sectional view and a bottom view showing a semiconductor package according to a first embodiment of the present invention.

3 is a cross-sectional view showing a semiconductor package according to a second embodiment of the present invention.

4A to 4F are explanatory views showing a method of manufacturing a semiconductor package according to the first embodiment of the present invention.

5A to 5G are explanatory views showing a method of manufacturing a semiconductor package according to the second embodiment of the present invention.

-Description of the main symbols in the drawings-

101,102; Semiconductor package according to the present invention

2; First semiconductor chips 2a and 2b; First and second surfaces of the first semiconductor chip

4; I / O pad of the first semiconductor chip

6; Second semiconductor chips 6a and 6b; First and second surfaces of the second semiconductor chip

8; I / O pad of the second semiconductor chip

10; Conductive Bump

12; Leads 12a, 12b; First and second side of the lead

14; Half etching part of lead

16; Circuit boards 16a and 16b; First and second sides of the circuit board

18; Resin layer 20; Circuit pattern

22; Through-hole 30; Liquid encapsulant

40; Encapsulant 50; Conductive ball

60; Conductive wire 70; Adhesive tape

In order to achieve the above object, the semiconductor package according to the present invention includes a first semiconductor chip having a first surface and a second surface, and having a plurality of input / output pads formed at a central portion and an inner circumference of the second surface; It has a first surface and a second surface, a plurality of input and output pads are formed on the first surface, the input and output pads are connected to the input and output pads formed in the center of the first semiconductor chip by the first electrical connection means 2 semiconductor chip; A substrate having a first surface and a second surface on an outer circumference of the first semiconductor chip and connected to an input / output pad formed on an inner circumference of the first semiconductor chip and a second electrical connection means; And a sealing material for encapsulating the first semiconductor chip, the second semiconductor chip, the first electrical connection means, the second electrical connection means, and the substrate.

The first electrical connection means may be any one selected from solder bumps, gold bumps, gold bumps coated with conductive epoxy, leadless solder bumps, and anisotropic conductive film (ACF).

Nickel / gold (Ni / Au) protrusions may be further formed on any one of the input / output pads of the first semiconductor chip or the second semiconductor chip connected by the first electrical connection means.

The first electrical connection means between the first semiconductor chip and the second semiconductor chip may be underfilled with a liquid encapsulant.

The first surface of the first semiconductor chip or the second surface of the second semiconductor chip may be exposed to the outside of the encapsulant.

A heat dissipation conductive member may be further attached to the first surface of the first semiconductor chip.

The first substrate may be exposed to the outside of the encapsulant.

The second electrical connection means may be a conductive wire.

The substrate may be a lead of copper (Cu) series.

The lead may further have a half etching portion formed on the first surface of the end portion facing the first semiconductor chip.

The substrate may be a circuit board. The circuit board has a resin layer as a base layer, and a conductive circuit pattern is formed on a second surface thereof, and the circuit pattern can be directly connected to an input / output pad of a first semiconductor chip.

In addition, a plurality of through holes are formed in the resin layer of the circuit board so that a predetermined region of the circuit pattern is opened to the outside through the first surface, and the through holes are electrically connected to the circuit patterns and are subsequently mounted on the motherboard. The conductive ball may be fused.

Preferably, the height of the second surface of the first semiconductor chip is smaller than the height of the second surface of the substrate.

The first surface of the first semiconductor chip, the first surface of the substrate and the one surface of the encapsulant may be the same surface.

In addition, the semiconductor package manufacturing method according to the present invention in order to achieve the above object has a first semiconductor chip having a first surface and a second surface, a plurality of input and output pads are formed in the central portion and the inner periphery of the second surface And a second semiconductor chip having a first surface and a second surface and having a plurality of input / output pads formed thereon, wherein the input / output pad and the second semiconductor chip formed at the center of the first semiconductor chip are provided. Interconnecting the input / output pads with first electrical connection means; It has a first surface and a second surface, and provided with a substrate that is located on the outer periphery of the first semiconductor chip and the second semiconductor chip to be mounted on the motherboard later, the first surface and the first semiconductor of the substrate Bonding an integral adhesive tape to the first substrate and the first surface of the first semiconductor chip such that the first surface of the chip is the same surface; Connecting the input / output pad formed on the inner circumference of the first semiconductor chip and the substrate with second electrical connection means; And sealing the first semiconductor chip, the second semiconductor chip, and the substrate on the adhesive tape with an encapsulant.

The first electrical connection means may be any one selected from solder bumps, gold bumps, gold bumps coated with conductive epoxy, leadless solder bumps, and anisotropic conductive films (ACF).

Nickel / gold (Ni / Au) protrusions may be formed on one of the input / output pads of the first semiconductor chip or the second semiconductor chip, and then may be interconnected by the first electrical connection means.

After the first semiconductor chip and the second semiconductor chip are connected by the first electrical connection means, the first electrical connection means may be underfilled with a liquid encapsulant.

The encapsulation step may allow the second surface of the second semiconductor chip to be exposed to the outside of the encapsulant.

After the encapsulation step, a heat-dissipating conductive member may be further attached to the first surface of the first semiconductor chip exposed to the outside of the encapsulant.

Conductive wires may be used as the second electrical connection means.

The substrate may be a copper (Cu) -based lead.

The lead may be one in which a half etched portion is further formed on a first surface of an end portion facing the first semiconductor chip.

The substrate has a resin layer as a base layer, and a conductive circuit pattern is formed on the resin layer, and an end portion of the circuit pattern can be directly connected to an input / output pad of the first semiconductor chip. A circuit board in which a plurality of through holes are further formed may be used in a predetermined region so as to open outward through the first surface.

At this time, after the sealing step, the adhesive tape is peeled off, and the conductive ball mountable on the motherboard is further welded to the through hole of the resin layer.

Preferably, the height of the second surface of the first semiconductor chip is smaller than the height of the second surface of the substrate.

According to the semiconductor package and the manufacturing method of the present invention as described above, the thickness of the first semiconductor chip is canceled by the thickness of the substrate (lead or circuit board), it is possible to obtain a semiconductor package with a thin overall thickness.

In addition, since one surface of the first semiconductor chip and / or the second semiconductor chip is exposed to the outside of the encapsulant, a semiconductor package having excellent heat dissipation performance can be obtained.

In addition, by further attaching a conductive member to the exposed surface of the first semiconductor chip (or the second semiconductor chip), the heat dissipation performance can be further improved.

In addition, by connecting the first semiconductor chip and the second semiconductor chip in the form of a flip chip, it is possible to solve problems such as wire sweeping or wire short due to the conventional loop height.

In addition, it is possible to obtain a low-cost semiconductor package by manufacturing a semiconductor package using a cheap lead, a circuit board and the like.

In addition, when a circuit board is used as a substrate, a semiconductor package can be shortened by directly connecting a conductive circuit pattern formed on the circuit board to an input / output pad of a first semiconductor chip using tap bonding, lead bonding, or gang bonding technology. It becomes possible.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings such that those skilled in the art can easily implement the present invention.

2A and 2B are a cross-sectional view and a bottom view showing a semiconductor package 101 according to a first embodiment of the present invention.

First, the first semiconductor chip 2 has a first plane 2a and a second plane 2b which are substantially planar, and a plurality of input / output pads 4 are formed at the central portion and the inner circumference of the second surface 2b. It is provided.

In addition, the first surface 6a and the second surface 6b are substantially planar, and a plurality of input / output pads 8 are formed on the first surface 6a, and the input / output pad 8 has a first surface. A second semiconductor chip 6 connected to the input / output pad 4 formed in the center of the first semiconductor chip 2 by electrical connection means is provided.

Here, the first electrical connection means may be a solder bump, a gold bump, a gold bump coated with a conductive epoxy, a leadless solder bump, or the like. The conductive bump 10 may be any one selected from an anisotropic conductive film (ACF).

The anisotropic conductive film is a mixture of a general adhesive film and conductive metal grains as is well known, the thickness of the adhesive film is about 50μm and the diameter of the conductive metal grains is about 5μm. In addition, the surface of the conductive metal grains is coated with a thin polymer (Polymer), and when heat or pressure is applied to a predetermined region of the anisotropic conductive film, the polymer surrounding the conductive metal grains of the portion melts to have conductivity and the like. The part of 가지고 has the property of maintaining a certain insulation, so it is easy to align the parts to be interconnected.

That is, in the method of interconnecting a semiconductor chip using the conductive bumps 10 (flip chip technology), the positions of the first semiconductor chip 2 and the second semiconductor chip 6 with respect to the input / output pads 4 and 8 are precisely determined. After matching, the conductive bumps 10 fused to any one of the input and output pads 4 and 8 should be reflowed. However, in the case of using the anisotropic conductive film, this high accuracy positioning is not necessary. have.

In addition, nickel / gold (Ni / Au) protrusions (not shown) are formed in advance on the input / output pads 4 and 8 of any one of the first semiconductor chip 2 and the second semiconductor chip 6. After that, the two semiconductor chips may be interconnected by using the conductive bumps 10 or the anisotropic conductive film as described above. The reason why the nickel / gold protrusions are formed in advance as described above is to reinforce the connection strength of the first semiconductor chip 2 and the second semiconductor chip 6.

On the other hand, when the two semiconductor chips are interconnected using the flip chip technology as described above, there is no difference in coefficient of thermal expansion between the two semiconductor chips to secure the standoff height of the conductive bump 10 or the anisotropic conductive film. Since it is not necessary, the overall thickness of the two stacked semiconductor chips is further reduced.

In addition, the conductive bumps 10 between the first semiconductor chip 2 and the second semiconductor chip 6 may be underfilled with the liquid encapsulant 30. When underfilled with the liquid encapsulant 30 as described above, the bonding strength of the two semiconductor chips is further strengthened, and the infiltration of foreign matter into the conductive bumps 10 is suppressed during the manufacturing process.

Subsequently, an outer peripheral edge of the first semiconductor chip 2 has a first surface 12a and a second surface 12b, and an input / output pad 4 formed at an inner peripheral edge of the first semiconductor chip 2. Substrate connected to the second electrical connecting means is provided.

Here, the substrate may be a lead 12 of copper (Cu) or iron (Fe) series, and the lead 12 may be formed on the first surface 12a of an end portion facing the first semiconductor chip 2. Half etched portion 14 may be further formed. The half-etching portion 14 improves the bonding area with the encapsulant 40 to be described later, and causes an interlocking effect, so that the lead 12 moves up, down, left, and right in the encapsulant 40. To prevent the phenomenon of deviation.

The second electrical connection means for electrically connecting the input / output pad 4 formed on the inner circumference of the first semiconductor chip 2 and the substrate, i.e., the lead 12, is a conductive wire 60 such as a gold wire or an aluminum wire. Is preferably used.

Subsequently, the first semiconductor chip 2, the second semiconductor chip 6, the first electrical connection means (the conductive bump 10 or the anisotropic conductive film), the second electrical connection means (the conductive wire 60) and the sub The straight (lead 12) is sealed with the sealing material 40.

The encapsulant 40 may be an epoxy molding compound or a liquid encapsulant 30 (eg, Glop Top) used in the underfill.

Meanwhile, the first semiconductor chip 2 may further expose the first surface 2a to the outside of the encapsulant 40 to further improve its heat dissipation performance.

Similarly, the second surface 6b of the second semiconductor chip 6 may also be exposed to the outside of the encapsulant 40 to further improve its heat dissipation performance (not shown).

In addition, a conductive member may be further attached to the first surface 2a of the first semiconductor chip 2 and / or the second surface 6b of the second semiconductor chip 6 to improve its heat dissipation performance. Not shown)

In addition, since the first surface 12a of the lead 12, that is, the lead 12, is also exposed to the outside of the encapsulant 40, the exposed surface may be later mounted on a predetermined pattern of the motherboard.

On the other hand, since the height of the second surface 2b of the first semiconductor chip 2 is smaller than the height of the second surface 12b of the substrate (lead 12), the second electrical connection means (conductive wire 60) The loop height of)) is minimized.

In addition, the first surface 2a of the first semiconductor chip 2 and the first surface 12a of the substrate (lead 12) and one surface of the encapsulant 40 form the same surface.

3 is a cross-sectional view showing a semiconductor package 102 according to a second embodiment of the present invention. Here, since the second embodiment of the present invention is similar to the first embodiment, only the differences will be described.

As shown, the interconnection structure of the first semiconductor chip 2 and the second semiconductor chip 6 is the same as that of the semiconductor package 101 according to the first embodiment of the present invention. However, in the second embodiment of the present invention, the circuit board 16 is positioned on the outer circumference of the first semiconductor chip 2 instead of the leads 12 as the substrate.

The circuit board 16 has a conductive circuit pattern 20 formed on the second surface 16b of which the resin layer 18, tape or film is selected as a base layer. The conductive circuit pattern 20 is a thin film of copper (Cu) series.

The circuit pattern 20 extends to a predetermined region of the first semiconductor chip 2 and is directly connected to the input / output pad 4 of the first semiconductor chip 2.

In addition, the circuit board 16 has a plurality of through holes 22 formed in the resin layer 18 so that the predetermined region of the circuit pattern 20 is opened outward through the first surface 16a. The through hole 22 is electrically connected to the circuit pattern 20 and a conductive ball 50 such as a solder ball is welded to be mounted on a motherboard later.

In the case where the circuit board 16 is used as described above, the circuit pattern 20 formed on the second surface 16b of the circuit board 16 is directly bonded to the input / output pad 4 of the first semiconductor chip 2. The conductive wire 60, like the first embodiment of the present invention, is not required. Therefore, the structure of the semiconductor package 102 is simplified and the number of manufacturing processes thereof is reduced.

In addition, as the substrate, a circuit board (not shown) having a resin layer as a base layer and a circuit pattern including a borland on a first surface and a bond finger on a second surface may be used.

4A to 4F are explanatory views showing a method of manufacturing the semiconductor package 101 according to the first embodiment of the present invention, and FIGS. 5A to 5G are semiconductor packages 102 according to the second embodiment of the present invention. The manufacturing method of the semiconductor packages 101 and 102 according to the present invention will be described with reference to this as an explanatory diagram showing a manufacturing method of the present invention.

1. A semiconductor chip interconnection step, comprising: a first semiconductor having a first surface (2a) and a second surface (2b), and having a plurality of input / output pads (4) formed at a central portion and an inner circumference of the second surface (2b). A second semiconductor chip 6 having a chip 2, and having a first surface 6a and a second surface 6b, and having a plurality of input / output pads 8 formed thereon. And the input / output pad 4 formed in the center of the first semiconductor chip 2 and the input / output pad 8 of the second semiconductor chip 6 are interconnected by first electrical connection means. See 5a)

Here, the first electrical connection means may be any one selected from solder bumps, gold bumps, gold bumps coated with conductive epoxy, conductive bumps 10 such as leadless solder bumps, or anisotropic conductive films.

Nickel / gold (Ni / Au) protrusions are formed on one of the input / output pads 4 and 8 of the input / output pads 4 and 8 of the first semiconductor chip 2 or the second semiconductor chip 6. It may be interconnected by electrical connection means.

After the first semiconductor chip 2 and the second semiconductor chip 6 are connected by the first electrical connection means, the first electrical connection means is underfilled with the liquid encapsulant 30 in order to improve the connection strength and the like. (See Figs. 4B and 5B).

2. Substrate and adhesive tape providing step, having a first surface (12a, 16a) and a second surface (12b, 16b), the outer periphery of the first semiconductor chip (2) and the second semiconductor chip (6) Integrally bonded so that the first surface 12a, 16a of the substrate and the first surface 2a of the first semiconductor chip 2 are flush with each other. The tape 70 is adhered to the first surfaces 12a and 16a of the substrate and the first surface 2a of the first semiconductor chip 2.

Here, the substrate is copper or iron-based, and a lead 12 having a half etched portion 14 may be used on the first surface 2a of the end portion facing the first semiconductor chip 2. 4c)

In addition, the substrate has a resin layer 18 as a base layer, and a conductive circuit pattern 20 is formed on the resin layer 18, and an end portion of the circuit pattern 20 is formed on the first semiconductor chip ( The circuit board 20 is directly connected to the input / output pad 4 of FIG. 2, and a plurality of through holes 22 are further formed so that a predetermined region of the circuit pattern 20 is opened to the outside through the first surface 16a. 16) may be used (see FIG. 5C).

On the other hand, the height of the second surface 2b of the first semiconductor chip 2 is smaller than the height of the second surface 12b, 16b of the substratum, so that the distance between the first semiconductor chip 2 and the substratum is It is desirable to minimize the loop height of.

3. A second electrical connection step, comprising: a second electrical connection between the input / output pad 4 formed on the inner circumference of the first semiconductor chip 2 and the substrate (second surface 12b of the lead 12). Connect by means.

In this case, when the lead 12 is used as the substrate, a conductive wire 60 such as gold wire or aluminum wire can be used. (See FIG. 4D.)

When the circuit board 16 is used as the substrate, the circuit pattern 20 formed on the circuit board 16 can be directly connected to the input / output pad 4 of the first semiconductor chip 2 (FIG. 5D). Reference)

Here, the method of connecting the circuit pattern 20 of the circuit board 16 to the input / output pad 4 of the first semiconductor chip 2 may be performed by using a tap bonding, a lead bonding or a gang bonding method, as is well known. The bonding time can be minimized.

4. In the encapsulation step, the first semiconductor chip 2, the second semiconductor chip 6, and the substrate on the adhesive tape 70 are encapsulated with an encapsulant 40 such as an epoxy molding compound or a liquid encapsulant. (See Figures 4e and 5e)

In this case, the second surface 6b of the second semiconductor chip 6 may be exposed to the outside of the encapsulant 40 to improve heat dissipation performance.

5. As a step of removing the adhesive tape, the adhesive tape 70 is removed from one surface of the first semiconductor chip 2, the encapsulant 40 and the substrate (see FIGS. 4F and 5F).

Here, after the adhesive tape 70 is removed as described above, a conductive member may be further attached to the first surface 2a of the first semiconductor chip 2 to further improve its heat dissipation performance. Not)

In this case, when the lead 12 is used as the substrate, the first surface 2a of the lead 12 may be directly mounted on the motherboard.

On the other hand, when the circuit board 16 is used as the substrate, the conductive balls 50 such as solder balls are fused to the through holes 22 formed in the circuit board 16 (see Fig. 5G).

After the above steps are completed, the conventional marking is performed. When the substrate has a matrix or a matrix having rows and columns, the semiconductor package is separated into a single semiconductor package through a singulation step.

As described above, although the present invention has been described with reference to the above embodiments, the present invention is not limited thereto, and various modified embodiments may be possible without departing from the scope and spirit of the present invention.

Therefore, according to the semiconductor package and the method of manufacturing the same according to the present invention, the thickness of the first semiconductor chip is canceled by the thickness of the substrate (lead or circuit board), thereby obtaining a semiconductor package having a thin thickness as a whole.

In addition, a semiconductor package having excellent heat dissipation performance can be obtained by exposing one surface of the first semiconductor chip and / or the second semiconductor chip to the outside of the encapsulant.

Furthermore, by further attaching a conductive member to the exposed surface of the first semiconductor chip (or the second semiconductor chip), its heat dissipation performance can be further improved.

In addition, by connecting the first semiconductor chip and the second semiconductor chip in the form of a flip chip, problems such as wire sweeping or wire short due to the conventional loop height can be solved.

In addition, a low cost semiconductor package can be obtained by manufacturing a semiconductor package using inexpensive leads, circuit boards, and the like.

In addition, when a circuit board is used as a substrate, a semiconductor package can be shortened by directly connecting a conductive circuit pattern formed on the circuit board to an input / output pad of a first semiconductor chip using tap bonding, lead bonding, or gang bonding technology. Can be.

Claims (15)

A first semiconductor chip having a first surface and a second surface, and having a plurality of input / output pads formed at a central portion and an inner circumference of the second surface; It has a first surface and a second surface, a plurality of input and output pads are formed on the first surface, the input and output pads are connected to the input and output pads formed in the center of the first semiconductor chip by the first electrical connection means 2 semiconductor chip; A substrate having a first surface and a second surface on an outer circumference of the first semiconductor chip and connected to an input / output pad formed on an inner circumference of the first semiconductor chip and a second electrical connection means; A semiconductor package comprising an encapsulant for encapsulating the first semiconductor chip, the second semiconductor chip, the first electrical connection means, the second electrical connection means, and the substrate. The method of claim 1, wherein the first electrical connection means is any one selected from solder bumps, gold bumps, gold bumps coated with conductive epoxy, leadless solder bumps, and anisotropic conductive films (ACF). A semiconductor package, characterized in that. The semiconductor package of claim 1, wherein the first electrical connection means between the first semiconductor chip and the second semiconductor chip is underfilled with a liquid encapsulant. The semiconductor package of claim 1, wherein the first semiconductor chip is exposed to the outside of the encapsulant. The heat dissipating conductive member is further attached to the first surface of the first semiconductor chip, and the second surface of the second semiconductor chip is exposed to the outside of the encapsulant. Semiconductor Package. The semiconductor package of claim 1, wherein the substrate has a first surface exposed to the outside of the encapsulant. The semiconductor package according to claim 1, wherein the second electrical connection means is a conductive wire. The semiconductor package of claim 1, wherein the substrate is a metallic lead. The semiconductor package according to claim 1, wherein the substrate is a circuit board having a circuit pattern including a resin layer as a base layer, a borland on a first surface, and a bond finger on a second surface. The semiconductor package of claim 1, wherein the substrate is formed of a resin layer as a base layer, and a second surface thereof is a circuit board having a conductive circuit pattern directly connected to an input / output pad of a first semiconductor chip. The circuit board of claim 10, wherein the circuit board has a plurality of through-holes formed in the resin layer such that a predetermined region of the circuit pattern is opened outwardly through the first surface, and the through-holes are electrically connected to the circuit pattern. A semiconductor package characterized in that the conductive ball is mounted on the board is fused. A first semiconductor chip having a first surface and a second surface, the first semiconductor chip having a plurality of input / output pads formed at a central portion and an inner circumference of the second surface, and having a first surface and a second surface; A second semiconductor chip having a plurality of input / output pads formed thereon, and interconnecting the input / output pad formed at the center of the first semiconductor chip with the input / output pad of the second semiconductor chip with first electrical connection means; It has a first surface and a second surface, and provided with a substrate that is located on the outer periphery of the first semiconductor chip and the second semiconductor chip to be mounted on the motherboard later, the first surface and the first semiconductor of the substrate Bonding an integral adhesive tape to the first substrate and the first surface of the first semiconductor chip such that the first surface of the chip is the same surface; Connecting the input / output pad formed on the inner circumference of the first semiconductor chip and the substrate with second electrical connection means; Method of manufacturing a semiconductor package comprising the step of encapsulating the first semiconductor chip, the second semiconductor chip, the substrate on the adhesive tape with an encapsulant. The method of manufacturing a semiconductor package according to claim 12, wherein after the first semiconductor chip and the second semiconductor chip are connected by the first electrical connection means, the first electrical connection means is underfilled with a liquid encapsulant. The method of claim 12, wherein after the encapsulating, the heat-dissipating conductive member is further attached to the first surface of the first semiconductor chip exposed to the outside of the encapsulant. The method of claim 12, wherein the height of the second surface of the first semiconductor chip is smaller than the height of the second surface of the substrate.