KR20020002591A - 박막 트랜지스터 액정 표시 장치의 제조 방법 - Google Patents
박막 트랜지스터 액정 표시 장치의 제조 방법 Download PDFInfo
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- KR20020002591A KR20020002591A KR1020000036806A KR20000036806A KR20020002591A KR 20020002591 A KR20020002591 A KR 20020002591A KR 1020000036806 A KR1020000036806 A KR 1020000036806A KR 20000036806 A KR20000036806 A KR 20000036806A KR 20020002591 A KR20020002591 A KR 20020002591A
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- liquid crystal
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 9
- 238000002161 passivation Methods 0.000 abstract description 9
- 239000012212 insulator Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000001312 dry etching Methods 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0252—Improving the response speed
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (7)
- 박막트랜지스터와 화소전극을 배치하기 위한 하부 기판 위에 투명전극을 형성하여 스토리지 캐패시턴스를 형성한 후 상기 투명전극을 패터닝하여 화소전극 및 데이터 신호선을 형성하는 제 1 마스크 공정과,상기 데이터 신호선위에 저 저항 데이터 금속 배선을 형성하고, 포스핀(PH3) 플라즈마 처리를 하여 상기 투명전극 표면에 InPOX를 형성시켜 비정질 실리콘과 오믹 접촉시킨 후, 비정질 실리콘막과 절연막을 연속해서 증착하여 액티브층 성막을 형성하는 제 2 마스크 공정과,상기 공정 이후 액티브 영역, 정전기 방지회로 영역, 스토리지 캐패시턴스 영역 및 데이터 신호라인을 보호하는 보호막 영역을 동시에 형성하는 제 3 마스크 공정과,상기 공정 이후 게이트 패턴을 형성하며, 이때 정전기 방지회로의 데이터 신호라인과 게이트 신호라인을 게이트 금속으로 연결하는 제 4 마스크 공정을 포함하여 이루어진 것을 특징으로 하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
- 제 1 항에 있어서, 상기 데이터 금속 배선은,몰리브덴(Mo), 텅스텐몰리브덴(MoW) 중 어느 1개의 단일 층으로 형성한 것을 특징으로 하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
- 제 1 항에 있어서, 상기 데이터 금속 배선은,알루미늄(Al)/몰리브덴(Mo), 몰리브덴(Mo)/알루미늄(Al)/몰리브덴(Mo) 중 어느 1개의 다층 구조로 형성한 것을 특징으로 하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
- 제 1 항에 있어서, 상기 제 3 마스크 공정시,상기 정전기 방지 회로의 데이터 금속과 게이트 금속을 연결할 부분의 비아 홀을 형성하는 공정을 포함하는 것을 특징으로 하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
- 제 1 항에 있어서, 상기 절연막은,질화실리콘(SiN), 산화질실리콘(SiON), 산화실리콘(SiO2) 중 어느 1개의 단일막으로 형성된 것을 특징으로 하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
- 제 1 항에 있어서, 상기 절연막은,질화실리콘(SiN)/산화질실리콘(SiON), 질화실리콘(SiN)/산화실리콘(SiO2) 중 어느 1개의 다층의 막으로 형성된 것을 특징으로 하는 박막 트랜지스터 액정 표시장치의 제조 방법.
- 제 1 항에 있어서, 상기 게이트 금속은,Al, AlND, AlSi. AlSiCu, MoW, Mo 중 어느 1개인 것을 특징으로 하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
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KR1020000036806A KR100668136B1 (ko) | 2000-06-30 | 2000-06-30 | 박막 트랜지스터 액정 표시 장치의 제조 방법 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100492722B1 (ko) * | 2002-06-25 | 2005-06-07 | 주식회사 지에이엔지니어링건축사사무소 | 건축물 내외벽장식용 인조석과 그 인조석의 제조방법 |
KR100863727B1 (ko) * | 2002-03-20 | 2008-10-16 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법 |
KR100870019B1 (ko) * | 2002-09-18 | 2008-11-21 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그의 제조 방법 |
WO2020073393A1 (zh) * | 2018-10-09 | 2020-04-16 | 武汉华星光电技术有限公司 | 用于显示器的像素结构 |
-
2000
- 2000-06-30 KR KR1020000036806A patent/KR100668136B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100863727B1 (ko) * | 2002-03-20 | 2008-10-16 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법 |
KR100492722B1 (ko) * | 2002-06-25 | 2005-06-07 | 주식회사 지에이엔지니어링건축사사무소 | 건축물 내외벽장식용 인조석과 그 인조석의 제조방법 |
KR100870019B1 (ko) * | 2002-09-18 | 2008-11-21 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그의 제조 방법 |
WO2020073393A1 (zh) * | 2018-10-09 | 2020-04-16 | 武汉华星光电技术有限公司 | 用于显示器的像素结构 |
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KR100668136B1 (ko) | 2007-01-15 |
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