KR20020001737A - 트랜지스터를 제작하는 방법 - Google Patents

트랜지스터를 제작하는 방법 Download PDF

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Publication number
KR20020001737A
KR20020001737A KR1020017010279A KR20017010279A KR20020001737A KR 20020001737 A KR20020001737 A KR 20020001737A KR 1020017010279 A KR1020017010279 A KR 1020017010279A KR 20017010279 A KR20017010279 A KR 20017010279A KR 20020001737 A KR20020001737 A KR 20020001737A
Authority
KR
South Korea
Prior art keywords
thin film
underlayer
tft
gate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020017010279A
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English (en)
Korean (ko)
Inventor
마르틴 요트. 포웰
Original Assignee
요트.게.아. 롤페즈
코닌클리케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 요트.게.아. 롤페즈, 코닌클리케 필립스 일렉트로닉스 엔.브이. filed Critical 요트.게.아. 롤페즈
Publication of KR20020001737A publication Critical patent/KR20020001737A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
KR1020017010279A 1999-12-15 2000-11-30 트랜지스터를 제작하는 방법 Abandoned KR20020001737A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9929614.7A GB9929614D0 (en) 1999-12-15 1999-12-15 Method of manufacturing a transistor
GB9929614.7 1999-12-15
PCT/EP2000/012034 WO2001045147A1 (en) 1999-12-15 2000-11-30 Method of manufacturing a transistor

Publications (1)

Publication Number Publication Date
KR20020001737A true KR20020001737A (ko) 2002-01-09

Family

ID=10866349

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017010279A Abandoned KR20020001737A (ko) 1999-12-15 2000-11-30 트랜지스터를 제작하는 방법

Country Status (7)

Country Link
US (2) US6383926B2 (https=)
EP (1) EP1163695B1 (https=)
JP (1) JP2003517203A (https=)
KR (1) KR20020001737A (https=)
DE (1) DE60040275D1 (https=)
GB (1) GB9929614D0 (https=)
WO (1) WO2001045147A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9929615D0 (en) * 1999-12-15 2000-02-09 Koninkl Philips Electronics Nv Method of manufacturing an active matrix device
KR100611042B1 (ko) * 1999-12-27 2006-08-09 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
JP4015820B2 (ja) * 2001-04-11 2007-11-28 日本碍子株式会社 配線基板及びその製造方法
US7190008B2 (en) 2002-04-24 2007-03-13 E Ink Corporation Electro-optic displays, and components for use therein
GB2388709A (en) 2002-05-17 2003-11-19 Seiko Epson Corp Circuit fabrication method
US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors
CN1842745B (zh) * 2003-08-28 2013-03-27 株式会社半导体能源研究所 薄膜晶体管、薄膜晶体管的制造方法、以及显示器件的制造方法
WO2005045509A2 (en) * 2003-10-27 2005-05-19 E Ink Corporation Electro-optic displays
TWI236153B (en) * 2004-01-05 2005-07-11 Quanta Display Inc Method for fabricating self-aligned TFT
KR100669752B1 (ko) * 2004-11-10 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치
CN101443888B (zh) * 2006-03-13 2011-03-16 内诺格雷姆公司 薄硅或者锗片以及由薄片形成的光电池
US20080173877A1 (en) * 2007-01-09 2008-07-24 Kabushiki Kaisha Y.Y.L. Semiconductor apparatus
TWI378562B (en) * 2008-01-23 2012-12-01 Ind Tech Res Inst Microcrystalline silicon thin film transistor and method for manufactruing the same
JP5480554B2 (ja) * 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
FR2944140B1 (fr) * 2009-04-02 2011-09-16 Commissariat Energie Atomique Dispositif de detection d'image electronique
US9422964B2 (en) 2009-04-10 2016-08-23 3M Innovative Properties Company Blind fasteners
JP5629308B2 (ja) 2009-04-10 2014-11-19 スリーエム イノベイティブ プロパティズ カンパニー 盲締結具
US20100294352A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Metal patterning for electrically conductive structures based on alloy formation
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
US20140061795A1 (en) * 2012-08-31 2014-03-06 David H. Levy Thin film transistor including improved semiconductor interface
US8791023B2 (en) * 2012-08-31 2014-07-29 Eastman Kodak Company Patterned thin film dielectric layer formation
KR101958056B1 (ko) 2013-05-24 2019-03-13 데이진 가부시키가이샤 고점도 알콜 용매 및 실리콘/게르마늄계 나노입자를 포함하는 인쇄용 잉크

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133758A (ja) 1983-12-21 1985-07-16 Seiko Epson Corp Ｍｏｓ型半導体装置の製造方法
JPS60159825A (ja) 1984-01-31 1985-08-21 Sharp Corp 液晶表示素子の製造方法
US4994401A (en) * 1987-01-16 1991-02-19 Hosiden Electronics Co., Ltd. Method of making a thin film transistor
JP3162745B2 (ja) * 1991-08-29 2001-05-08 三洋電機株式会社 絶縁ゲート形電界効果トランジスタの製造方法
US5796458A (en) * 1992-09-01 1998-08-18 Fujitsu Limited Element division liquid crystal display device and its manufacturing method
JP3981426B2 (ja) * 1996-07-12 2007-09-26 シャープ株式会社 ゲート絶縁膜形成方法
KR100272260B1 (ko) * 1996-11-27 2000-11-15 김영환 유사다이아몬드를 이용한 박막트랜지스터 및 그의 제조방법
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
TW410478B (en) * 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
EP1093663A2 (en) * 1998-06-19 2001-04-25 Thin Film Electronics ASA Integrated inorganic/organic complementary thin-film transistor circuit

Also Published As

Publication number Publication date
DE60040275D1 (https=) 2008-10-30
US20020132401A1 (en) 2002-09-19
US20010015462A1 (en) 2001-08-23
EP1163695A1 (en) 2001-12-19
US6759711B2 (en) 2004-07-06
EP1163695B1 (en) 2008-09-17
GB9929614D0 (en) 2000-02-09
WO2001045147A1 (en) 2001-06-21
JP2003517203A (ja) 2003-05-20
US6383926B2 (en) 2002-05-07

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