KR20010077530A - 질화물 발광 소자 - Google Patents
질화물 발광 소자 Download PDFInfo
- Publication number
- KR20010077530A KR20010077530A KR1020000005380A KR20000005380A KR20010077530A KR 20010077530 A KR20010077530 A KR 20010077530A KR 1020000005380 A KR1020000005380 A KR 1020000005380A KR 20000005380 A KR20000005380 A KR 20000005380A KR 20010077530 A KR20010077530 A KR 20010077530A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light emitting
- active layer
- emitting device
- ingan
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- 238000005253 cladding Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 12
- 238000001704 evaporation Methods 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 abstract 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 3
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (5)
- 기판 위에 형성되는 광 가이드층이나 클래딩층 중 적어도 어느 한 층과 활성층 사이에 중간 완충층이 삽입되는 구조를 포함하는 질화물 발광 소자.
- 제 1항에 있어서, 상기 중간 완충층은 900℃ 이하에서 성장됨을 특징으로 하는 질화물 발광 소자.
- 제 1항에 있어서, 상기 중간 완충층의 두께는 0.01∼5㎚인 것을 특징으로 하는 질화물 발광 소자.
- 제 1항에 있어서, 상기 중간 완충층은 상기 활성층이 InGaN으로 이루어진 경우에, GaN, AlGaN, InGaN 중 어느 하나로 이루어지는 것을 특징으로 하는 질화물 발광 소자.
- 제 1항에 있어서, 상기 중간 완충층이 InGaN을 사용하여 이루어질 때, In의 조성은 양자 장벽에 들어가는 In의 조성보다 작은 것을 특징으로 하는 질화물 발광 소자.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000005380A KR100628200B1 (ko) | 2000-02-03 | 2000-02-03 | 질화물 발광 소자 |
US09/773,508 US6590234B2 (en) | 2000-02-03 | 2001-02-02 | Nitride semiconductor light-emitting element and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000005380A KR100628200B1 (ko) | 2000-02-03 | 2000-02-03 | 질화물 발광 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010077530A true KR20010077530A (ko) | 2001-08-20 |
KR100628200B1 KR100628200B1 (ko) | 2006-09-27 |
Family
ID=19644110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000005380A KR100628200B1 (ko) | 2000-02-03 | 2000-02-03 | 질화물 발광 소자 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6590234B2 (ko) |
KR (1) | KR100628200B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9054253B2 (en) | 2001-05-30 | 2015-06-09 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3864735B2 (ja) * | 2000-12-28 | 2007-01-10 | ソニー株式会社 | 半導体発光素子およびその製造方法 |
KR100480593B1 (ko) * | 2002-01-04 | 2005-04-06 | 삼성전자주식회사 | 활성 영역 한정용 얼라인 키를 가지는 반도체 소자 및 그제조 방법 |
KR101045202B1 (ko) | 2003-10-17 | 2011-06-30 | 삼성전자주식회사 | III-V 족 GaN 계 반도체 소자 및 그 제조방법 |
KR100541104B1 (ko) * | 2004-02-18 | 2006-01-11 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
EP1755172A1 (en) * | 2005-08-17 | 2007-02-21 | Ngk Insulators, Ltd. | Semiconductor layered structure and its method of formation, and light emitting device |
US20070045638A1 (en) | 2005-08-24 | 2007-03-01 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with double heterostructure light emitting region |
KR101316423B1 (ko) * | 2007-08-09 | 2013-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101344181B1 (ko) | 2008-01-30 | 2013-12-20 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그의 제조 방법 |
US10497829B2 (en) | 2009-12-04 | 2019-12-03 | Sensor Electronic Technology, Inc. | Semiconductor material doping |
US9634183B2 (en) * | 2009-12-04 | 2017-04-25 | Sensor Electronic Technology, Inc. | Semiconductor material doping |
DE102013017275B4 (de) | 2013-10-17 | 2022-01-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3771952B2 (ja) * | 1995-06-28 | 2006-05-10 | ソニー株式会社 | 単結晶iii−v族化合物半導体層の成長方法、発光素子の製造方法およびトランジスタの製造方法 |
KR100226434B1 (ko) * | 1996-12-07 | 1999-10-15 | 이계철 | 고출력 반도체 레이저 구조 및 그 제조방법 |
US6266355B1 (en) * | 1997-09-12 | 2001-07-24 | Sdl, Inc. | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
US6466597B1 (en) * | 1998-06-17 | 2002-10-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
US6288417B1 (en) * | 1999-01-07 | 2001-09-11 | Xerox Corporation | Light-emitting devices including polycrystalline gan layers and method of forming devices |
KR20010002626A (ko) * | 1999-06-16 | 2001-01-15 | 조장연 | 더블 헤테로 구조의 질화물 반도체소자 |
KR20010008570A (ko) * | 1999-07-02 | 2001-02-05 | 조장연 | 양자 우물 구조의 질화물 반도체소자 |
KR20010009603A (ko) * | 1999-07-12 | 2001-02-05 | 조장연 | 질화물 반도체소자 |
KR100324203B1 (ko) * | 1999-09-18 | 2002-02-16 | 오길록 | 순수 이득결합 분포 궤환형 반도체 레이저 및 그 제조방법 |
-
2000
- 2000-02-03 KR KR1020000005380A patent/KR100628200B1/ko active IP Right Review Request
-
2001
- 2001-02-02 US US09/773,508 patent/US6590234B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9054253B2 (en) | 2001-05-30 | 2015-06-09 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
US9112083B2 (en) | 2001-05-30 | 2015-08-18 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
Also Published As
Publication number | Publication date |
---|---|
US6590234B2 (en) | 2003-07-08 |
US20010011731A1 (en) | 2001-08-09 |
KR100628200B1 (ko) | 2006-09-27 |
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