KR20010072189A - 반도체 디바이스 - Google Patents
반도체 디바이스 Download PDFInfo
- Publication number
- KR20010072189A KR20010072189A KR1020017001409A KR20017001409A KR20010072189A KR 20010072189 A KR20010072189 A KR 20010072189A KR 1020017001409 A KR1020017001409 A KR 1020017001409A KR 20017001409 A KR20017001409 A KR 20017001409A KR 20010072189 A KR20010072189 A KR 20010072189A
- Authority
- KR
- South Korea
- Prior art keywords
- transistor
- type
- memory
- floating
- voltage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000005689 Fowler Nordheim tunneling Effects 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 230000005669 field effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99201765 | 1999-06-04 | ||
| EP99201765.7 | 1999-06-04 | ||
| PCT/EP2000/004891 WO2000075994A1 (en) | 1999-06-04 | 2000-05-24 | Semiconductor device with a non-volatile memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010072189A true KR20010072189A (ko) | 2001-07-31 |
Family
ID=8240268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020017001409A KR20010072189A (ko) | 1999-06-04 | 2000-05-24 | 반도체 디바이스 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1119875A1 (de) |
| JP (1) | JP2003501838A (de) |
| KR (1) | KR20010072189A (de) |
| WO (1) | WO2000075994A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220076749A1 (en) * | 2020-09-07 | 2022-03-10 | Stmicroelectronics (Rousset) Sas | New memory architecture for serial eeproms |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1451969A2 (de) | 2001-11-27 | 2004-09-01 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung mit byte-löschbarem eeprom speicher |
| JP4528718B2 (ja) * | 2005-12-27 | 2010-08-18 | 株式会社東芝 | 不揮発性半導体メモリの製造方法 |
| KR100805838B1 (ko) | 2006-08-10 | 2008-02-21 | 삼성전자주식회사 | 엑스아이피 플래시 메모리 장치 및 그 프로그램 방법 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| CN101751999A (zh) * | 2008-12-17 | 2010-06-23 | 上海华虹Nec电子有限公司 | 一种2t嵌入式浮栅电可擦写只读存储器 |
| CN106783868B (zh) * | 2017-02-16 | 2019-07-16 | 杰华特微电子（张家港）有限公司 | 基于cmos工艺的单次可编程只读存储器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432740A (en) * | 1993-10-12 | 1995-07-11 | Texas Instruments Incorporated | Low voltage flash EEPROM memory cell with merge select transistor and non-stacked gate structure |
| US5471422A (en) * | 1994-04-11 | 1995-11-28 | Motorola, Inc. | EEPROM cell with isolation transistor and methods for making and operating the same |
| US5687118A (en) * | 1995-11-14 | 1997-11-11 | Programmable Microelectronics Corporation | PMOS memory cell with hot electron injection programming and tunnelling erasing |
| US5862082A (en) * | 1998-04-16 | 1999-01-19 | Xilinx, Inc. | Two transistor flash EEprom cell and method of operating same |
-
2000
- 2000-05-24 KR KR1020017001409A patent/KR20010072189A/ko not_active Application Discontinuation
- 2000-05-24 EP EP00940280A patent/EP1119875A1/de not_active Withdrawn
- 2000-05-24 JP JP2001502170A patent/JP2003501838A/ja not_active Withdrawn
- 2000-05-24 WO PCT/EP2000/004891 patent/WO2000075994A1/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220076749A1 (en) * | 2020-09-07 | 2022-03-10 | Stmicroelectronics (Rousset) Sas | New memory architecture for serial eeproms |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003501838A (ja) | 2003-01-14 |
| WO2000075994A1 (en) | 2000-12-14 |
| EP1119875A1 (de) | 2001-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |