KR20010048261A - Gas Mixer for Chemical Vapor Deposit Apparatus - Google Patents

Gas Mixer for Chemical Vapor Deposit Apparatus Download PDF

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Publication number
KR20010048261A
KR20010048261A KR1019990052886A KR19990052886A KR20010048261A KR 20010048261 A KR20010048261 A KR 20010048261A KR 1019990052886 A KR1019990052886 A KR 1019990052886A KR 19990052886 A KR19990052886 A KR 19990052886A KR 20010048261 A KR20010048261 A KR 20010048261A
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South Korea
Prior art keywords
gas
body portion
holes
distributor
inlet
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KR1019990052886A
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Korean (ko)
Inventor
정경철
Original Assignee
박종섭
주식회사 하이닉스반도체
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Priority to KR1019990052886A priority Critical patent/KR20010048261A/en
Publication of KR20010048261A publication Critical patent/KR20010048261A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512Premixing before introduction in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45574Nozzles for more than one gas

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE: An apparatus for mixing gas in a chemical vapor deposition equipment is provided to uniformly mixing vapor and gas by installing a gas distributor on the outside of which a plurality of holes are formed. CONSTITUTION: The apparatus for mixing gas in a chemical vapor deposition equipment comprises a body part (11) installed inside the CVD (chemical vapor deposition) equipment; a plurality of vapor inlets formed inside the body part; a mixed gas exhaust nozzle (17) formed on the body part; and a gas distributor (A) installed inside the body part, wherein a plurality of holes (18) are formed on the outside of its body of the gas distributor with spaced apart from in a certain distance.

Description

화학기상 증착 장비의 가스 혼합 장치{Gas Mixer for Chemical Vapor Deposit Apparatus}Gas Mixer for Chemical Vapor Deposition Equipment {Gas Mixer for Chemical Vapor Deposit Apparatus}

본 발명은 반도체 제조 장비인 화학 기상 증착(Chemical Vapor Deposit ;이하 CVD라 약칭함)장비의 가스 혼합 장치에 관한 것으로 특히 가스 분배기를 설치 하므로써 반응 가스(reactive gas)와 화합물 기체를 균일하게 혼합하는 가스 혼합 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a gas mixing device of a chemical vapor deposition (hereinafter, referred to as CVD) equipment, which is a semiconductor manufacturing equipment, and in particular, a gas that uniformly mixes a reactive gas and a compound gas by installing a gas distributor. To a mixing device.

CVD 장비는 반도체 기판 상에서 화학 반응을 일으켜 원하는 소재의 박막을 형성시키는 장비로서 반응 가스와, 화합물 기체 즉, 형성 시키고자하는 박막 재료를 구성하는 원소로 된 1종 또는 그 이상의 화합물로 된 기체를 섞어 기판이 안치된 챔버내에 공급하여 혼합기체가 화학 반응을 일으키게 하므로써 원하는 소재의 박막을 기판상에 형성시키는데 가스와 화합물 기체를 혼합하여 챔버로 공급하는 장치가 가스 혼합 장치이다.CVD equipment is a chemical reaction on a semiconductor substrate to form a thin film of a desired material, a reaction gas and a compound gas, that is, a gas of one or more compounds of the elements constituting the thin film material to be formed by mixing A gas mixing device is a device for mixing a gas and a compound gas into a chamber by supplying the substrate into a chamber in which the mixed gas causes a chemical reaction to form a thin film of a desired material on the substrate.

CVD 장비로 얻어내는 여러 종류의 박막 소재 중 메탈 필름(Metal Film)이나 컨덕티브 옥사이드 필름(Conductive Oxide Film)등의 금속 박막을 얻어내는 장비를 금속 유기체 화학 기상 증착(Metal-Organic CVD ; 이하 MOCVD라 약칭함) 장비라 하는데 이 장비에서도 역시 가스 혼합 장치가 사용된다.Among various kinds of thin film materials obtained by CVD equipment, the equipment which obtains metal thin films such as metal film and conductive oxide film is called metal-organic CVD (MOCVD). Abbreviated) equipment, which also uses a gas mixing device.

이하 CVD 장비내의 가스 혼합 장치중 MOCVD 장비 내에서 사용되는 가스 혼합 장치를 예로 들어 종래의 가스 혼합 장치를 설명한다.Hereinafter, a conventional gas mixing apparatus will be described taking as an example a gas mixing apparatus used in the MOCVD apparatus among the gas mixing apparatuses in the CVD equipment.

도 1은 종래의 기술에 의한 가스 혼합장치에서 가스가 혼합되는 상태를 나타낸 개략 구조도이며 도면 내의 화살표는 기체 혹은 가스의 흐름을 나타낸다.1 is a schematic structural diagram showing a state in which gases are mixed in a gas mixing apparatus according to the prior art, and arrows in the drawings indicate gas or gas flow.

기화된 Metal Organic(이하 MO라 약칭함) 소스가 가스 혼합 장치 몸체 상부에 형성된 제 1 유입구(5)로 공급되면 제 1 가스 라인(2)을 따라 하향하고, 반응 기체는 가스 혼합 장치 우측에 형성된 제 2 유입구(6)로 공급되어 제 2,3 가스 라인(3,4)으로 분리되어 흐르다가 가스 혼합부(8)에서 만나 혼합된 후 반응 챔버내로 공급된다.When the vaporized Metal Organic source (hereinafter abbreviated as MO) source is fed to the first inlet 5 formed above the gas mixing device body, it descends along the first gas line 2 and the reaction gas is formed on the right side of the gas mixing device. It is supplied to the second inlet 6 and is separated into the second and third gas lines 3 and 4 and then flows to meet and mix in the gas mixing section 8 and then into the reaction chamber.

이때, 챔버내로 공급될 혼합 가스는 반응 가스와 기화된 MO 소스가 고루 혼합된 상태라야 웨이퍼 상에 박막이 균일하게 형성된다.At this time, the thin film is uniformly formed on the wafer only when the mixed gas to be supplied into the chamber is evenly mixed with the reactant gas and the vaporized MO source.

그러나, 종래 장치의 경우 반응 가스가 가스 혼합부까지 흐르는 경로가 두 가지로 각각 길이가 다르기 때문에 흐름형태가 서로 다르며 분리되었다가 가스 혼합부에서다시 합쳐지는 과정에서 난류를 형성하게 되고, 따라서 반응 가스의 유량이 계속 변화하기 때문에 기화된 MO 소스와 균일하게 배합된 혼합 가스를 반응 챔버로 공급할 수 가 없다.However, in the conventional apparatus, since the length of the reaction gas flows to the gas mixing part has two different lengths, the flow forms are different from each other, and the turbulent flow is formed in the process of being separated and then merged again in the gas mixing part. Since the flow rate of the gas continues to change, it is not possible to supply a mixed gas uniformly combined with the vaporized MO source to the reaction chamber.

따라서, 웨이퍼 상에 형성되는 박막은 혼합 가스내의 반응 가스의 유량 변화에 의해 균일도가 보장되지 않게 되는 문제점이 있고, 또한 반응 가스가 흐르는 경로가 길기 때문에 라인 측벽에 붙어 이후 파티클 발생원이 되는 문제점이 있었다.Therefore, the thin film formed on the wafer has a problem that the uniformity is not guaranteed due to the change in the flow rate of the reaction gas in the mixed gas, and because the path of the reaction gas flows long, the thin film is stuck to the side wall of the line and has a problem of generating particles later. .

따라서 본 발명은 상술한 종래 기술의 문제점을 해결하기 위해 제안된 것으로서, 외측에 다수개의 홀이 형성된 가스 분배기를 설치하여 기체 및 가스가 서로 균일하게 혼합될 수 있도록 한 CVD 장치내의 가스 혼합 장치를 제공함을 그 목적으로 한다.Accordingly, the present invention has been proposed to solve the above-mentioned problems of the prior art, and provides a gas mixing device in a CVD apparatus in which a gas distributor having a plurality of holes formed on the outside thereof can be uniformly mixed with each other. For that purpose.

상기한 목적을 달성하기 위한 본 발명은 CVD 장비 내에 설치되는 몸체부와, 몸체부내에 형성되는 다수개의 기체 유입구와, 몸체부에 형성되는 혼합가스 분출구와, 자체 몸통 외부에 일정 간격으로 다수개의 홀이 형성되며 몸체부 내에 설치되는 가스 분배기를 포함하여 구성되는 것이 특징이다.The present invention for achieving the above object is a body portion installed in the CVD equipment, a plurality of gas inlet formed in the body portion, the mixed gas outlet formed in the body portion, a plurality of holes at regular intervals outside the body itself It is formed and is characterized by including a gas distributor installed in the body portion.

또, 몸체부에는 제 1 요홈부가 형성되어 있고, 몸체부 상하에 접촉되며 제 2요홈부가 형성된 커버와, 몸체부와 상기 커버를 체결하는 체결 수단과, 몸체부와 상기 커버의 요홈부에 의해 발생되는 공간에 삽입되는 밀폐 수단을 더 포함하여 구성되며, 다수개의 홀은 사선형 배열로 형성된다.In addition, the body portion is formed by a cover having a first groove portion, which is in contact with the top and bottom of the body portion, the cover having the second groove portion formed therein, a fastening means for fastening the body portion and the cover, and the body portion and the groove portion of the cover. It further comprises a sealing means inserted into the space to be formed, the plurality of holes are formed in a diagonal arrangement.

가스 분배기는 상하가 개방된 원통형으로 되어 몸체부 내에서 몸체부 벽면과의 사이에 미세한 공간을 두고 상측 개방부는 화합물 기체가 유입되는 제 1유입구와, 하측 개방부는 반응챔버에 연결된 혼합가스 분출구와 연결되도록 설치되며, 다수개의 홀과 반응 가스가 유입되는 제 2 유입구는 미세 공간을 사이에 두고 연결되어 미세 공간을 따라 흐르는 반응가스가 상기 홀로 유입될 수 있도록 설치된 것이 특징이다.The gas distributor has a cylindrical shape with an open top and bottom, so that there is a small space between the wall of the body and the upper opening is connected to the first inlet through which the compound gas is introduced, and the lower opening is connected to the mixed gas outlet connected to the reaction chamber. The second inlets through which the plurality of holes and the reaction gas are introduced are connected to each other with a microcavity interposed therebetween so that the reaction gas flowing along the microcavity can be introduced into the hole.

또, 이 가스 분배기는 MOCVD 장비내에 설치하여 사용할 수 있다.In addition, this gas distributor can be installed and used in MOCVD equipment.

도 1은 종래의 발명에 의한 가스 혼합장치에서 가스가 혼합되는 상태를 나타낸 개략 구조도1 is a schematic structural diagram showing a state where gases are mixed in a gas mixing apparatus according to the related art

도 2a는 본 발명에 의한 가스 혼합장치의 평면도2a is a plan view of a gas mixing device according to the present invention

도 2b는 도 2a의 I-I'선의 종단면도FIG. 2B is a longitudinal sectional view of the II ′ line of FIG. 2A

도 2C는 도 2b의 A 부분인 가스 분배기의 사시도FIG. 2C is a perspective view of a gas distributor which is part A of FIG. 2B

<도면의 주요부분에 대한 부호 설명><Description of Signs of Major Parts of Drawings>

11:몸체부 12:커버 13: 밀폐 링11: Body part 12: cover 13: sealing ring

14:스크류 15:제 1유입부(혹은 기화된 MO가스 유입부)14: screw 15: the first inlet (or vaporized MO gas inlet)

16:제 2유입부(혹은 반응가스 유입부) 17: 혼합 가스 분출구16: second inlet (or reaction gas inlet) 17: mixed gas outlet

18:홀 A: 가스 분배기18: hole A: gas distributor

이하에서 첨부된 도면을 참조하여 본 발명의 구체적인 실시 예를 상세히 설명하되 본 발명이 CVD 장비중 MOCVD 장비 내에 설치되어 사용되는 예를 든다.Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2a는 본 발명에 의한 가스 혼합장치의 평면도이고, 도 2b는 도 2a의 I-I'선의 종단면도이고, 도 2C는 도 2b의 A 부분인 가스 분배기의 사시도 이다.FIG. 2A is a plan view of the gas mixing apparatus according to the present invention, FIG. 2B is a longitudinal sectional view of the line II ′ of FIG. 2A, and FIG. 2C is a perspective view of the gas distributor which is part A of FIG. 2B.

본 발명은 반응 챔버 상측에 설치되어 기화된 MO 소스와 반응 가스를 혼합하여 반응 챔버내로 혼합가스를 공급하는 작용을 한다.The present invention is installed above the reaction chamber serves to mix the vaporized MO source and the reaction gas to supply the mixed gas into the reaction chamber.

그 구성을 살펴보면 다음과 같다.The configuration is as follows.

육면체 형상을 가진 몸체부(11)는 3면의 중심이 일직선으로 관통되어 상측에는 기화된 MO 소스 유입구(15)가 형성되어 있고, 하측에는 혼합가스가 반응 챔버(미도시)로 이동하는 혼합가스 분출구(17)가 형성되며, 측면에는 반응 가스 유입구(16)가 형성되어 있으며 상측의 기화된 MO 소스 유입구(15) 주변을 따라 반원형태의 단면을 가진 제 1요홈부(23)가 형성되어 있다.The body portion 11 having a hexahedron shape has three centers of straight lines penetrated in a straight line to form a vaporized MO source inlet 15 at an upper side thereof, and a mixed gas in which a mixed gas moves to a reaction chamber (not shown). A jet port 17 is formed, and a reaction gas inlet 16 is formed at a side thereof, and a first recess 23 having a semicircular cross section is formed around the upper vaporized MO source inlet 15. .

몸체부(11) 상면과 하면은 커버(12)로 덮여 있는데 커버에는 몸체부의 제 1요홈부(23-2)와 커버가 접촉되는 지점에 몸체부의 요홈부와 똑같은 모양의 반원형의 단면을 가진 제 2요홈부(23-2)가 형성되어 결국 커버와 몸체부가 접촉될 때 링 형상의 공간을 형성한다.The upper and lower surfaces of the body portion 11 are covered with a cover 12. The cover has a semicircular cross section having the same shape as the groove portion of the body portion at the point where the first groove portion 23-2 and the cover contact the body portion. 2 concave portion 23-2 is formed to form a ring-shaped space when the cover and the body portion eventually contact.

이 공간에 밀폐 링(13)을 삽입하고 커버(12)와 몸체부(11)를 스크류(14)로 죄어 몸체부 내부를 외부로부터 밀폐시킨다.The sealing ring 13 is inserted into this space, and the cover 12 and the body portion 11 are tightened with screws 14 to seal the inside of the body portion from the outside.

또, 몸체부 내의 상하 관통 공간에는 상하가 개방된 원통형의 가스 분배기(A)가 설치되는데 몸체부의 벽면과는 기체가 흐를수 있을정도의 약간의 미세 공간(19)만 남겨둔 채 꼭 맞도록 되어있다. 가스 분배기(A)는 상하가 개방되어 있으므로 상측은 기화된 MO 소스 유입구(15)와, 하측은 혼합가스 분출구(17)와 각각 연결되고 몸통 주변에는 다수개의 홀(18)이 일정 간격으로 형성되어 반응 가스 유입구(16)로부터 들어와 몸체부 벽면과의 사이에 형성된 미세 공간을 따라 흐르는 가스가 홀(14)을 통해 가스 분배기 내부로 유입될 수 있도록 되어있다.In addition, a cylindrical gas distributor A, which is opened up and down, is installed in the upper and lower through spaces of the body part, and is fitted with the wall surface of the body part, leaving only a slight microcavity 19 enough for gas to flow. . Since the gas distributor A is open at the upper and lower sides, the upper side is connected to the vaporized MO source inlet 15 and the lower side is respectively connected to the mixed gas outlet 17, and a plurality of holes 18 are formed at regular intervals around the body. The gas flowing from the reaction gas inlet 16 and along the microcavity formed between the body wall surface can be introduced into the gas distributor through the hole 14.

본 실시예 에서는 가스 분배기에 형성된 홀의 배열은 일정 간격을 둔 사선 형태로 되어 있지만 가스 분배기 내로 고루 반응 가스가 유입될 수 있는 배열이라면 어떠한 배열이라도 무관하다.In this embodiment, the arrangement of the holes formed in the gas distributor is in the form of diagonal lines at regular intervals, but any arrangement may be used as long as the arrangement allows the reaction gas to flow into the gas distributor.

이하 본 발명의 동작을 설명한다.The operation of the present invention will be described below.

기화된 MO 소스가 가스 혼합 장치 상측의 기화된 MO 소스 유입구(15)를 통해 바로 가스 분배기(A) 내로 들어오고 반응 가스는 가스 혼합 장치 우측의 반응 가스 유입구(16)로 들어오나 가스 분배기 측벽에 부딪쳐 곧바로 가스 분배기 내로 유입되지는 못한다.The vaporized MO source enters the gas distributor A directly through the vaporized MO source inlet 15 above the gas mixing device and the reactant gas enters the reaction gas inlet 16 on the right side of the gas mixing device, but at the gas distributor sidewall. They do not hit the gas distributor immediately.

따라서, 가스 분배기 측벽에 부딪친 반응 가스는 측벽에 형성된 가스 분배기와 몸체부 사이의 미세 공간(19)을 따라 흘러 가스 분배기 외벽 전체에 분포하게 되고, 그 중 일부가 가스 분배기에 고른 분포로 형성된 홀(18)을 통해 내부로 유입되므로 가스 분배기 내부에는 반응 가스가 고른 분포로 유입된다.Accordingly, the reactant gas that strikes the gas distributor sidewall flows along the microcavity 19 between the gas distributor and the body portion formed on the sidewall, and is distributed throughout the outer wall of the gas distributor, and some of the holes are evenly distributed in the gas distributor. 18), the reaction gas is introduced into the gas distributor in an even distribution.

이상에서 설명한 바와 같이 본 발명은 다수개의 홀이 일정 간격으로 균일하게 형성된 가스 분배기를 설치하여 반응 가스가 각각의 홀을 통해 분산되어 혼합 장치 내로 유입되게 하므로써 반응 가스의 유량이 달라도 가스 혼합 장치 내로 유입되는 흐름 형태는 일정하게 되므로 가스 혼합 장치 내에서 반응 가스와 화합물 기체가 균일하게 혼합되어 반응 챔버로 공급되므로 웨이퍼 상에 균일한 박막이 형성되며, 반응가스 유입경로의 길이가 단축되어 파티클 발생 가능성도 줄어드는 효과를 가진다.As described above, the present invention installs a gas distributor in which a plurality of holes are uniformly formed at predetermined intervals so that the reaction gas is dispersed through each hole and introduced into the mixing device, even if the flow rate of the reaction gas is different, the gas mixing device flows into the gas mixing device. Since the flow form becomes constant, the reaction gas and the compound gas are uniformly mixed in the gas mixing device and supplied to the reaction chamber to form a uniform thin film on the wafer, and the length of the reaction gas inlet path is shortened, and thus the possibility of particle generation. It has a reducing effect.

Claims (4)

CVD 장비 내에 설치되는 몸체부와,A body portion installed in the CVD equipment, 상기 몸체부내에 형성되는 다수개의 기체 유입구와,A plurality of gas inlets formed in the body portion, 상기 몸체부에 형성되는 혼합가스 분출구와,A mixed gas outlet formed in the body portion; 자체 몸통 외부에 일정 간격으로 다수개의 홀이 형성되며 상기 몸체부 내에 설치되는 가스 분배기를 포함하여 구성되는 것이 특징인 CVD 장비내의 가스 혼합 장치.Gas mixing device in the CVD equipment, characterized in that it comprises a gas distributor which is formed in the body portion a plurality of holes at regular intervals outside the body. 청구항 1에 있어서,The method according to claim 1, 상기 몸체부에는 제 1 요홈부가 형성되어 있고,The body portion is formed with a first groove, 상기 몸체부 상하에 접촉되며 제 2요홈부가 형성된 커버와,A cover in contact with the upper and lower parts of the body part and having a second recess portion; 상기 몸체부와 상기 커버를 체결하는 체결 수단과,Fastening means for fastening the body portion and the cover; 상기 몸체부와 상기 커버의 요홈부에 의해 발생되는 공간에 삽입되는 밀폐 수단을 더 포함하여 구성되며,It further comprises a sealing means inserted into the space generated by the groove portion of the body portion and the cover, 상기 다수개의 홀은 사선형 배열로 형성되는 것이 특징인 CVD 장비내의 가스 혼합 장치.And said plurality of holes are formed in a diagonal arrangement. 청구항 1에 있어서,The method according to claim 1, 상기 가스 분배기는 상하가 개방된 원통형으로 되어 상기 몸체부 내에서 몸체부 벽면과의 사이에 미세한 공간을 두고 상측 개방부는 화합물 기체가 유입되는 제 1유입구와, 하측 개방부는 반응챔버에 연결된 혼합가스 분출구와 연결되도록 설치되며,The gas distributor has a cylindrical shape having an upper and lower opening, and has a fine space between the body part and the wall of the body, and the upper opening has a first inlet through which compound gas is introduced, and the lower opening has a mixed gas outlet connected to the reaction chamber. Installed to connect with 상기 다수개의 홀과 반응 가스가 유입되는 제 2 유입구는 상기 미세 공간을 사이에 두고 연결되어 미세 공간을 따라 흐르는 반응가스가 상기 홀로 유입될 수 있도록 설치된 것이 특징인 CVD 장비내의 가스 혼합 장치.And the second inlet through which the plurality of holes and the reactive gas are introduced are connected with the microcavity interposed therebetween so that the reaction gas flowing along the microcavity is introduced into the hole. 청구항 1에 있어서,The method according to claim 1, 상기 가스 분배기는 MOCVD 장비 내에 설치되는 것이 특징인 CVD 장비내의 가스 혼합 장치.And the gas distributor is installed in the MOCVD equipment.
KR1019990052886A 1999-11-26 1999-11-26 Gas Mixer for Chemical Vapor Deposit Apparatus KR20010048261A (en)

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