KR100371343B1 - Deposition chamber apparatus for plasma polymerization - Google Patents

Abstract

The present invention relates to a deposition apparatus for plasma polymerization, and more particularly, a deposition chamber having a first electrode and a second electrode disposed to face each other, and forming a thin film on a sample using plasma generated through the first electrode and the second electrode. And a gas injection means for uniformly injecting the reaction gas into the deposition chamber, wherein the gas injection means is installed to be evenly disposed on at least one of the upper and lower surfaces of the deposition chamber to react into the deposition chamber. By providing a deposition apparatus for plasma polymerization composed of a plurality of gas injection nozzles for injecting the gas to the reaction gas is evenly distributed in the deposition chamber to ensure uniformity of the sample passed through the deposition chamber.

Description

Deposition equipment for plasma polymerization {DEPOSITION CHAMBER APPARATUS FOR PLASMA POLYMERIZATION}

The present invention relates to a continuous process plasma polymerization equipment, and more particularly, to a deposition apparatus for plasma polymerization having a structure in which a reaction gas is evenly distributed in a deposition chamber to ensure uniformity of a sample.

In the plasma polymerization apparatus, a polymer is deposited on a sample by chemically reacting a source gas, that is, a reaction gas, using a plasma to form a thin film on the surface of the sample.

At this time, the thin film formed on the surface of the sample has different chemical properties according to the kind of reaction gas, the kind of power used for generating plasma, the magnitude of voltage, the deposition time, and the like.

That is, the thin film may obtain characteristics such as surface strength change, adhesion and adsorption, hydrophilicity, and hydrophobicity depending on the processing conditions.

Such plasma polymerization equipment is widely used to manufacture thin films of metal films, semiconductor films, insulating films, photoconductor films, diffusion barrier films, and adhesion films constituting semiconductor integrated circuit devices, superconducting devices, various electronic devices, and various sensors.

In the plasma polymerization apparatus as described above, as shown in FIG. 1, the coiling chamber 10, the deposition chamber 20, and the uncoiling chamber 30 are continuously disposed to supply the coiling chamber 10. When the sample wound on the supply is supplied into the deposition chamber 20, a thin film is formed on the surface of the sample in the deposition chamber 20, and the sample in which the thin film is completed is recovered to the uncoiling chamber 30.

The thin film forming process will be described in more detail with reference to FIG. 2. First, the sample of the coiling chamber 10 into the deposition chamber 20 in a state in which the pressure inside the deposition chamber 20 is maintained at a constant vacuum state ( When M 'is supplied, the reaction gas is injected into the deposition chamber 20 through each gas inlet 21 and 22.

At this time, each of the gas injection ports 21 and 22 is installed at the upper and lower ends of the side into which the reaction gas is injected in the deposition chamber 20, as shown in FIG. 3.

As described above, the reaction gas is injected and at the same time, the first electrode 23 and the second electrode 24 provided to face each other with the sample M 'interposed therebetween by direct current power or high frequency power by the power supply 25. In addition, low frequency power is applied to form plasma in the deposition chamber 20.

That is, the charged particles are accelerated by the electrostatic field between the first electrode 23 and the second electrode 24 to interact with each other by the collision of the charged particles and the charged particles or the charged particles and the electrodes 23 and 24. The plasma is generated and maintained accordingly.

Thereafter, the reaction gas causes a chemical reaction by the action of the plasma to deposit a polymer on the sample M ', and a thin film is formed on the surface of the sample M' by the polymer.

The sample M 'on which the thin film is formed as described above is discharged toward the uncoiling chamber 30. As a result, the thin film formation process by plasma polymerization of the sample M 'is completed.

In the above description, reference numeral 11 denotes a connection passage connecting the coiling chamber 10 and the deposition chamber 20, and reference numeral 31 denotes a connection passage connecting the deposition chamber 20 and the uncoiling chamber 30. Numeral 32 designates a gas exhaust vent, respectively.

In addition, reference numeral 26 denotes a diffusion pump, reference numeral 27 denotes a rotary pump, reference numeral 28 denotes a thermo couple gauge, and reference numeral 29 denotes an ion gauge. Indicates.

However, in the conventional deposition apparatus constructed and operated as described above, the reaction gas is supplied to the side through which the sample M 'is introduced through each gas inlet 21 and 22, as shown in FIG. M ') is discharged to the connection passage 31 and discharged through the gas exhaust port (32).

Therefore, the above-described conventional plasma polymerization deposition apparatus has a dead zone in which the reaction gas is hardly present at the upper and lower ends of the sample M 'in the deposition chamber 20, that is, at the outlet side ( D1) and D2 are generated. Due to the dead volume D1 and D2, the characteristic values of the inlet-side sample M 'and the outlet-side sample M' of the deposition chamber 20 are changed. There was a problem that it is difficult to secure uniformity of M ').

The present invention has been made to solve the above problems, and to provide a deposition apparatus for plasma polymerization to ensure uniformity of the sample passed through the deposition chamber by evenly distributed reaction gas in the deposition chamber. There is this.

1 is a schematic view showing the overall system of a continuous process plasma polymerization equipment;

Figure 2 is a plan sectional view showing the internal structure of a deposition chamber for a typical plasma polymerization,

Figure 3 is a schematic side cross-sectional view showing a gas flow state of the deposition apparatus for plasma polymerization according to the prior art,

Figure 4 is a side cross-sectional view showing a deposition apparatus for plasma polymerization according to the present invention,

5 is a configuration diagram showing part A of FIG. 4 in detail.

<Explanation of symbols for the main parts of the drawings>

50: deposition chamber 51: upper gas injection nozzle

53: lower gas injection nozzle 55, 57: mesh structure

56, 58: mesh member 59: slit

M: Sample

The present invention for achieving the above object comprises a deposition chamber having a first electrode and a second electrode provided opposite to each other to form a thin film on the sample using the plasma generated through the first electrode and the second electrode; A plurality of gas injection nozzles installed on at least one of an upper surface and a lower surface of the deposition chamber to inject a reaction gas into the deposition chamber; A mesh member disposed above or below the gas injection nozzle to mix and disperse the reaction gas injected from the gas injection nozzle; It characterized in that it comprises a plurality of slits protruding inclined in the opposite direction to the direction in which the reaction gas is injected to both sides of the mesh member to promote the mixing of the reaction gas.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

Figure 4 is a side cross-sectional view showing a deposition apparatus for plasma polymerization according to the present invention, Figure 5 is a block diagram showing part A of Figure 4 in detail.

4 and 5, the deposition apparatus for plasma polymerization according to the present invention includes a first electrode and a second electrode which are disposed to face each other, and use plasma generated through the first electrode and the second electrode. It comprises a deposition chamber 50 for forming a thin film on the sample (M), and a gas injection means for uniformly injecting the reaction gas into the deposition chamber (50).

Here, the gas injection means is composed of a plurality of gas injection nozzles 51 and 53 which are installed to be evenly disposed on the upper and lower surfaces of the deposition chamber 50 to inject the reaction gas into the deposition chamber 50. Each of the gas injection nozzles 51 and 53 is divided into an upper gas injection nozzle 51 provided on an upper surface of the deposition chamber 50 and a lower gas injection nozzle 53 provided on a lower surface of the deposition chamber 50. .

In addition, the upper and lower sides of the deposition chamber 50, the mesh structure for passing and mixing and dispersing at the same time while passing the reaction gas injected through the respective gas injection nozzles 51, 53 to improve the uniformity of the reaction gas ( 55 and 57 are respectively installed.

In addition, the mesh structures 55 and 57 include a plurality of mesh members 56 and 58 installed in the same direction as the reaction gas is injected.

In addition, the mesh members 56 and 58 are installed to be arranged with a predetermined interval therebetween. If the spacing between the mesh members 56 and 58 is too large, no effect is generated and conversely too small. If so, it is most preferable to have about 15-18 FPI (Fins per Inch) because it will disturb the flow of the reaction gas itself.

In addition, on both side surfaces of each of the mesh members 56 and 58, three to four slits 59 protruding obliquely in a direction opposite to the direction in which the reaction gas is injected are formed so as to facilitate mixing of the reaction gases. .

The deposition apparatus for plasma polymerization according to the present invention configured as described above is operated as follows.

First, when the sample M of the coiling chamber is supplied to the deposition chamber 50 while the pressure inside the deposition chamber 50 is maintained at a constant vacuum state, the upper gas injection nozzles 51 and the lower gas injection nozzles are supplied. The reaction gas is injected into the deposition chamber 50 through the 53.

Thereafter, the reaction gases injected through the respective gas injection nozzles 51 and 53 are mesh structures 55 and 57, that is, a plurality of mesh members 56, respectively installed on the upper side and the lower side of the deposition chamber 50. The mixture is mixed and dispersed while passing through the 58 and the slit 59 and then supplied to the sample M side.

Therefore, the reaction gas is uniformly distributed throughout the surface of the sample (M).

As described above, the reaction gas is injected and at the same time, DC power or high frequency power or low frequency power is applied to the first electrode and the second electrode which are installed to face each other with the sample M interposed therebetween so that the inside of the deposition chamber 50 is provided. Plasma is formed.

That is, the charged particles are accelerated by the electrostatic field between the first electrode and the second electrode, and the plasma is generated and maintained according to the interaction caused by the collision of the charged particles and the charged particles or the charged particles and the respective electrodes.

Thereafter, the reaction gas causes a chemical reaction by the action of the plasma to deposit a polymer on the sample M, and a thin film is formed on the surface of the sample M by the polymer.

The sample M in which the thin film is formed as described above is discharged toward the uncoiling chamber. Thus, the thin film formation process by plasma polymerization of the sample M is completed.

In the above description, reference numeral 61 denotes a connection passage connecting the coiling chamber and the deposition chamber 50, reference numeral 63 denotes a connection passage connecting the deposition chamber 20 and the uncoiling chamber, and reference numeral 65 denotes a gas exhaust port. Represent each.

In the deposition polymerization apparatus for plasma polymerization according to the present invention constructed and operated as described above, the reaction gas is deposited by the action of the gas injection nozzles 51 and 53 and the mesh structures 55 and 57. Since it is evenly distributed inside the distribution state of the reaction gas on the surface of the sample (M) as a whole is uniform, there is an advantage that the uniformity of the sample (M) passed through the deposition chamber 50 is secured.

Claims (4)

A deposition chamber having a first electrode and a second electrode disposed to face each other, and forming a thin film on a sample using plasma generated through the first electrode and the second electrode; A plurality of gas injection nozzles installed on at least one of an upper surface and a lower surface of the deposition chamber to inject a reaction gas into the deposition chamber; A mesh member disposed above or below the gas injection nozzle to mix and disperse the reaction gas injected from the gas injection nozzle; Deposition apparatus for plasma polymerization comprising a plurality of slits protruding obliquely in a direction opposite to the direction in which the reaction gas is injected to both sides of the mesh member to promote the mixing of the reaction gas. The method of claim 1, The mesh member is a deposition apparatus for plasma polymerization, characterized in that installed in the same direction as the reaction gas injection direction. delete delete