KR20010023850A - 평판 표시용 이중층 금속 - Google Patents

평판 표시용 이중층 금속 Download PDF

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Publication number
KR20010023850A
KR20010023850A KR1020007002527A KR20007002527A KR20010023850A KR 20010023850 A KR20010023850 A KR 20010023850A KR 1020007002527 A KR1020007002527 A KR 1020007002527A KR 20007002527 A KR20007002527 A KR 20007002527A KR 20010023850 A KR20010023850 A KR 20010023850A
Authority
KR
South Korea
Prior art keywords
layer
aluminum
metal
clad
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020007002527A
Other languages
English (en)
Korean (ko)
Inventor
차크라보티키쇼어케이.
라마니스웨이얌부
Original Assignee
데이비드 엘. 화이트
캔데선트 테크놀러지스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 데이비드 엘. 화이트, 캔데선트 테크놀러지스 코포레이션 filed Critical 데이비드 엘. 화이트
Publication of KR20010023850A publication Critical patent/KR20010023850A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
KR1020007002527A 1997-09-17 1998-09-10 평판 표시용 이중층 금속 Withdrawn KR20010023850A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/932,318 1997-09-17
US08/932,318 US5894188A (en) 1997-09-17 1997-09-17 Dual-layer metal for flat panel display
PCT/US1998/018786 WO1999014780A1 (en) 1997-09-17 1998-09-10 Dual-layer metal for flat panel display

Publications (1)

Publication Number Publication Date
KR20010023850A true KR20010023850A (ko) 2001-03-26

Family

ID=25462137

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007002527A Withdrawn KR20010023850A (ko) 1997-09-17 1998-09-10 평판 표시용 이중층 금속

Country Status (6)

Country Link
US (3) US5894188A (https=)
EP (1) EP1016113B1 (https=)
JP (1) JP4255616B2 (https=)
KR (1) KR20010023850A (https=)
DE (1) DE69839124T2 (https=)
WO (1) WO1999014780A1 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894188A (en) * 1997-09-17 1999-04-13 Candescent Technologies Corporation Dual-layer metal for flat panel display
US6433473B1 (en) * 1998-10-29 2002-08-13 Candescent Intellectual Property Services, Inc. Row electrode anodization
US6822386B2 (en) * 1999-03-01 2004-11-23 Micron Technology, Inc. Field emitter display assembly having resistor layer
US6462467B1 (en) * 1999-08-11 2002-10-08 Sony Corporation Method for depositing a resistive material in a field emission cathode
US7052350B1 (en) * 1999-08-26 2006-05-30 Micron Technology, Inc. Field emission device having insulated column lines and method manufacture
US6635983B1 (en) * 1999-09-02 2003-10-21 Micron Technology, Inc. Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate
US6710525B1 (en) * 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
US20020184970A1 (en) * 2001-12-13 2002-12-12 Wickersham Charles E. Sptutter targets and methods of manufacturing same to reduce particulate emission during sputtering
WO2001086282A1 (en) 2000-05-11 2001-11-15 Tosoh Smd, Inc. Cleanliness evaluation in sputter targets using phase
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US7064500B2 (en) * 2000-05-26 2006-06-20 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6407516B1 (en) 2000-05-26 2002-06-18 Exaconnect Inc. Free space electron switch
US6800877B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6545425B2 (en) 2000-05-26 2003-04-08 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
JP2003535443A (ja) * 2000-05-31 2003-11-25 キャンデゼント テクノロジーズ コーポレイション 多層電極構造および形成方法
US6822626B2 (en) 2000-10-27 2004-11-23 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6762566B1 (en) 2000-10-27 2004-07-13 Science Applications International Corporation Micro-component for use in a light-emitting panel
US7288014B1 (en) 2000-10-27 2007-10-30 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6764367B2 (en) * 2000-10-27 2004-07-20 Science Applications International Corporation Liquid manufacturing processes for panel layer fabrication
US6545422B1 (en) * 2000-10-27 2003-04-08 Science Applications International Corporation Socket for use with a micro-component in a light-emitting panel
US6612889B1 (en) * 2000-10-27 2003-09-02 Science Applications International Corporation Method for making a light-emitting panel
US6570335B1 (en) 2000-10-27 2003-05-27 Science Applications International Corporation Method and system for energizing a micro-component in a light-emitting panel
US6801001B2 (en) * 2000-10-27 2004-10-05 Science Applications International Corporation Method and apparatus for addressing micro-components in a plasma display panel
US6796867B2 (en) * 2000-10-27 2004-09-28 Science Applications International Corporation Use of printing and other technology for micro-component placement
US6620012B1 (en) 2000-10-27 2003-09-16 Science Applications International Corporation Method for testing a light-emitting panel and the components therein
US6935913B2 (en) * 2000-10-27 2005-08-30 Science Applications International Corporation Method for on-line testing of a light emitting panel
JP4303970B2 (ja) * 2001-04-04 2009-07-29 トーソー エスエムディー，インク． アルミニウムスパッタリングターゲットまたはアルミニウム合金スパッタリングターゲット中の酸化アルミニウム介在物の臨界寸法を決定する方法
US6565400B1 (en) * 2001-06-26 2003-05-20 Candescent Technologies Corporation Frit protection in sealing process for flat panel displays
US6632117B1 (en) * 2001-06-26 2003-10-14 Candescent Intellectual Property Services, Inc. Frit protection in sealing process for flat panel displays
JP4349904B2 (ja) * 2001-08-09 2009-10-21 トーソー エスエムディー，インク． 寸法と位置によって分類された欠陥の種類による、非破壊的なターゲット清浄度特性決定のための方法と装置
US6406926B1 (en) * 2001-08-15 2002-06-18 Motorola, Inc. Method of forming a vacuum micro-electronic device
US7064475B2 (en) * 2002-12-26 2006-06-20 Canon Kabushiki Kaisha Electron source structure covered with resistance film
US20050189164A1 (en) * 2004-02-26 2005-09-01 Chang Chi L. Speaker enclosure having outer flared tube
CN112204897A (zh) 2018-06-01 2021-01-08 瑞典爱立信有限公司 用于波束选择的方法
WO2020108777A1 (en) 2018-11-30 2020-06-04 Telefonaktiebolaget Lm Ericsson (Publ) Approaches for beam selection

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
JPH08507643A (ja) * 1993-03-11 1996-08-13 フェド．コーポレイション エミッタ先端構造体及び該エミッタ先端構造体を備える電界放出装置並びにその製造方法
US5601466A (en) * 1995-04-19 1997-02-11 Texas Instruments Incorporated Method for fabricating field emission device metallization
WO1996042113A1 (en) * 1995-06-13 1996-12-27 Advanced Vision Technologies, Inc. Laminar composite lateral field-emission cathode and fabrication process
US5780960A (en) * 1996-12-18 1998-07-14 Texas Instruments Incorporated Micro-machined field emission microtips
US5894188A (en) * 1997-09-17 1999-04-13 Candescent Technologies Corporation Dual-layer metal for flat panel display

Also Published As

Publication number Publication date
JP4255616B2 (ja) 2009-04-15
US5894188A (en) 1999-04-13
WO1999014780A1 (en) 1999-03-25
EP1016113A4 (en) 2005-08-17
US6225732B1 (en) 2001-05-01
EP1016113A1 (en) 2000-07-05
US6019657A (en) 2000-02-01
EP1016113B1 (en) 2008-02-13
DE69839124D1 (de) 2008-03-27
JP2001516942A (ja) 2001-10-02
DE69839124T2 (de) 2009-03-05

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20000309

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20011017

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid