KR20000037540A - 저온소성용 유전체 조성물과 이를 이용한 적층 세라믹 콘덴서의제조방법 - Google Patents
저온소성용 유전체 조성물과 이를 이용한 적층 세라믹 콘덴서의제조방법 Download PDFInfo
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- KR20000037540A KR20000037540A KR1019980052149A KR19980052149A KR20000037540A KR 20000037540 A KR20000037540 A KR 20000037540A KR 1019980052149 A KR1019980052149 A KR 1019980052149A KR 19980052149 A KR19980052149 A KR 19980052149A KR 20000037540 A KR20000037540 A KR 20000037540A
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- South Korea
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- sio
- multilayer ceramic
- ceramic capacitor
- batio
- srzro
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 38
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000010304 firing Methods 0.000 title abstract description 13
- 238000005245 sintering Methods 0.000 claims abstract description 12
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 claims abstract description 8
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims abstract description 8
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 8
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 3
- 229910014458 Ca-Si Inorganic materials 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 229910018557 Si O Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- -1 CaCO 3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
시료번호 | BaTiO3(mol%) | SrZrO3(mol%) | MgCO3(mol%) | Y2O3(mol%) | Nb2O5(mol%) | LixCa(1-x/2)SiO3(mol%) | x |
비교재1 | 94.80 | 0.20 | 1.8 | 1.0 | 0.2 | 2.0 | 0.25 |
발명재1 | 94.55 | 0.45 | 1.7 | 1.1 | 0.2 | 2.0 | 0.25 |
발명재2 | 94.10 | 0.80 | 1.9 | 1.1 | 0.3 | 1.8 | 0.24 |
발명재3 | 91.40 | 3.40 | 2.0 | 1.3 | 0.3 | 1.6 | 0.21 |
비교재2 | 90.40 | 5.00 | 1.8 | 1.3 | 0.3 | 1.2 | 0.19 |
발명재4 | 93.95 | 0.80 | 2.5 | 1.2 | 0.05 | 1.5 | 0.30 |
발명재5 | 94.10 | 1.20 | 1.9 | 0.6 | 0.7 | 1.5 | 0.25 |
비교재3 | 91.90 | 2.40 | 1.9 | 1.5 | 1.0 | 1.3 | 0.23 |
비교재4 | 91.80 | 1.20 | 2.5 | 1.3 | 0.5 | 2.7 | 0.05 |
발명재6 | 92.10 | 1.50 | 2.5 | 1.3 | 0.5 | 2.1 | 0.10 |
발명재7 | 93.30 | 1.50 | 1.9 | 1.4 | 0.4 | 1.5 | 0.60 |
비교재5 | 94.00 | 1.20 | 1.9 | 1.4 | 0.3 | 1.2 | 0.90 |
비교재6 | 95.80 | 0.80 | 0.1 | 1.5 | 0.3 | 1.5 | 0.22 |
시료번호 | 유전율(K) 25℃ | 유전손실(%) 25℃ | 유전율 온도계수 -55℃(%) | 유전율 온도계수 +125℃(%) | 절연저항 x1011(Ω) | 소성온도 (℃) |
비교재1 | 2540 | 0.8 | -8.2 | +5.7 | 23 | 1260 |
발명재1 | 3040 | 1.0 | -9.4 | +3.5 | 16 | 1200 |
발명재2 | 3280 | 1.1 | -12.1 | +2.8 | 13 | 1190 |
발명재3 | 3320 | 1.3 | -13.7 | -1.6 | 8 | 1160 |
비교재2 | 3570 | 1.6 | -16.4 | -7.7 | 0.3 | 1130 |
발명재4 | 3350 | 1.0 | -9.9 | +6.0 | 15 | 1200 |
발명재5 | 3100 | 0.9 | -14.2 | +5.5 | 21 | 1170 |
비교재3 | 2260 | 0.4 | -10.2 | +8.5 | 0.1 | 1140 |
비교재4 | 2150 | 0.3 | -14.9 | +7.0 | 12 | 1260 |
발명재6 | 3380 | 1.2 | -11.6 | +3.9 | 3 | 1190 |
발명재7 | 3250 | 1.1 | -8.2 | -2.3 | 2 | 1160 |
비교재5 | 2080 | 1.1 | -5.0 | -3.4 | 27 | 1130 |
비교재6 | 3120 | 2.7 | -15.3 | +4.2 | 16 | 1160 |
Claims (5)
- 적층 세라믹 콘덴서에 사용되는 유전체 조성물에 있어서,티탄산바륨(BaTiO3), 지르콘산스트론륨(SrZrO3), 산화이트륨(Y2O3), 탄산마그네슘(MgCO3), 산화니오븀(Nb2O5), 및 소결조제로서 Li-Ca-Si-O계를 포함하고, 그 조성은 a BaTiO3- b SrZrO3- c MgCO3- d Y2O3- e Nb2O5- f LixCa(1-x/2)SiO3의 일반식으로 표현될 때 그 몰%로, 91.40≤a≤94.55, 0.45≤b≤3.40, 0.2≤c≤9.0, 0.05≤d≤2.0, 0.05≤e≤0.70, 및 1.0≤f≤3.0의 범위인 것을 특징으로 하는 저온소성용 유전체 조성물
- 제1항에 있어서, 상기 LixCa(1-x/2)SiO3은 0.1≤x≤0.6 범위인 것을 특징으로 하는 저온소성용 유전체 조성물
- 내부전극으로 Ni을 이용한 적층 세라믹 콘덴서의 제조방법에 있어서,a BaTiO3- b SrZrO3- c MgCO3- d Y2O3- e Nb2O5- f LixCa(1-x/2)SiO3의 일반식으로 표현될 때 그 몰%로, 91.40≤a≤94.55, 0.45≤b≤3.40, 0.2≤c≤9.0, 0.05≤d≤2.0, 0.05≤e≤0.70, 1.0≤f≤3.0의 범위가 되도록 티탄산바륨(BaTiO3), 지르콘산스트론륨(SrZrO3), 산화이트륨(Y2O3), 탄산마그네슘(MgCO3), 산화니오븀(Nb2O5), 및 LixCa(1-x/2)SiO3분말을 첨가하여 습식혼합하여 건조하는 단계;상기 건조된 분말에 바인더와 용매를 첨가하여 슬러리를 제조하는 단계;상기 슬러리를 이용하여 일정 형태의 시트상으로 성형하는 단계;성형된 시트 위에 Ni 내부전극을 인쇄하고, 인쇄된 시트를 다수개 적층하여 가압하는 단계;상기와 같이 적층된 적층물을 일정 크기로 절단하고, 소부하여 내부의 바인더를 제거하는 단계;탈바인더 처리된 성형체를 1100~1200℃ 온도에서 소결하는 단계; 및상기 소결체의 양단에 외부전극을 형성하는 단계; 를 포함하여 구성됨을 특징으로 하는 적층 세라믹 콘덴서의 제조방법
- 제3항에 있어서, 상기 LixCa(1-x/2)SiO3은 Li2O, CaCO3및 SiO2분말을 혼합하여 0.1≤x≤0.6의 범위로 조성된 것을 사용함을 특징으로 하는 제조방법
- 제3항에 있어서, 상기 소결온도는 1150~1200℃의 범위임을 특징으로 하는 제조방법
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KR1019980052149A KR100276271B1 (ko) | 1998-12-01 | 1998-12-01 | 저온소성용 유전체 조성물과 이를 이용한 적층 세라믹 콘덴서의제조방법 |
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KR1019980052149A KR100276271B1 (ko) | 1998-12-01 | 1998-12-01 | 저온소성용 유전체 조성물과 이를 이용한 적층 세라믹 콘덴서의제조방법 |
Publications (2)
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KR20000037540A true KR20000037540A (ko) | 2000-07-05 |
KR100276271B1 KR100276271B1 (ko) | 2000-12-15 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100444221B1 (ko) * | 2001-05-01 | 2004-08-16 | 삼성전기주식회사 | 유전체 자기 조성물, 이를 이용한 자기 커패시터 및 그 제조방법 |
KR100444220B1 (ko) * | 2001-05-01 | 2004-08-18 | 삼성전기주식회사 | 유전체 자기 조성물, 이를 이용한 자기 커패시터 및 그 제조방법 |
KR100452817B1 (ko) * | 2001-05-01 | 2004-10-15 | 삼성전기주식회사 | 유전체 자기 조성물, 이를 이용한 자기 커패시터 및 그 제조방법 |
KR100496135B1 (ko) * | 2002-09-18 | 2005-06-16 | (주) 알엔투테크놀로지 | 저온 동시소성 유전체 세라믹 조성물, 및 이의 용도 |
KR100916048B1 (ko) * | 2006-12-27 | 2009-09-08 | 삼성전기주식회사 | 유전체 세라믹 재료와 그 제조 방법 및 세라믹 콘덴서 |
-
1998
- 1998-12-01 KR KR1019980052149A patent/KR100276271B1/ko not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100444221B1 (ko) * | 2001-05-01 | 2004-08-16 | 삼성전기주식회사 | 유전체 자기 조성물, 이를 이용한 자기 커패시터 및 그 제조방법 |
KR100444220B1 (ko) * | 2001-05-01 | 2004-08-18 | 삼성전기주식회사 | 유전체 자기 조성물, 이를 이용한 자기 커패시터 및 그 제조방법 |
KR100452817B1 (ko) * | 2001-05-01 | 2004-10-15 | 삼성전기주식회사 | 유전체 자기 조성물, 이를 이용한 자기 커패시터 및 그 제조방법 |
KR100496135B1 (ko) * | 2002-09-18 | 2005-06-16 | (주) 알엔투테크놀로지 | 저온 동시소성 유전체 세라믹 조성물, 및 이의 용도 |
KR100916048B1 (ko) * | 2006-12-27 | 2009-09-08 | 삼성전기주식회사 | 유전체 세라믹 재료와 그 제조 방법 및 세라믹 콘덴서 |
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