KR20000031043A - Fabrication method of semiconductor package and device thereof - Google Patents
Fabrication method of semiconductor package and device thereof Download PDFInfo
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- KR20000031043A KR20000031043A KR1019980046847A KR19980046847A KR20000031043A KR 20000031043 A KR20000031043 A KR 20000031043A KR 1019980046847 A KR1019980046847 A KR 1019980046847A KR 19980046847 A KR19980046847 A KR 19980046847A KR 20000031043 A KR20000031043 A KR 20000031043A
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- semiconductor chip
- adhesive tape
- semiconductor
- picked
- wafer adhesive
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 373
- 238000000034 method Methods 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000002390 adhesive tape Substances 0.000 claims abstract description 170
- 230000003313 weakening effect Effects 0.000 claims abstract description 75
- 239000000853 adhesive Substances 0.000 claims abstract description 68
- 230000001070 adhesive effect Effects 0.000 claims abstract description 68
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 238000000926 separation method Methods 0.000 claims description 101
- 239000007789 gas Substances 0.000 claims description 72
- 239000000112 cooling gas Substances 0.000 claims description 47
- 238000001179 sorption measurement Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 238000005507 spraying Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 159
- 238000010586 diagram Methods 0.000 description 5
- 238000007599 discharging Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
본 발명은 반도체패키지의 제조방법 및 그 장치에 대한 것으로, 더욱 상세하게는 반도체패키지를 제조함에 있어서 웨이퍼소잉공정을 통하여 웨이퍼접착테이프(일명, 텍키테이프(Tacky Tape)에 접착된 상태로 낱개 소잉(Sawing; 절단, 재단)된 반도체칩을 웨이퍼접착테이프에서 용이하게 픽업(떼어내는 것, 분리해 내는 것)하기 위한 방법 및 이와 같은 반도체칩의 픽업방법을 가능케 해주는 이젝션장치의 개량에 관한 것이다.The present invention relates to a method for manufacturing a semiconductor package and an apparatus thereof, and more particularly, to the manufacture of a semiconductor package, in the state of being bonded to a wafer adhesive tape (also referred to as "Tacky Tape") through a wafer sawing process. The present invention relates to a method for easily picking up (splitting and separating) a semiconductor chip, which has been cut and cut, from a wafer adhesive tape, and to an improvement of an ejection apparatus that enables such a method of picking up a semiconductor chip.
일반적으로, 반도체패키지를 제조하려면 우선적으로 반도체패키지의 핵심이 되는 반도체칩을 마련해야 하는데, 이 반도체칩은 원판 디스크 형태의 웨이퍼(1)로부터 얻어진다.Generally, in order to manufacture a semiconductor package, a semiconductor chip, which is the core of the semiconductor package, must first be prepared, which is obtained from the wafer 1 in the form of a disc.
즉, 웨이퍼(1)에는 동일 구성을 갖는 반도체칩(2)이 일정간격으로 무수히 많이 설계 실장되어 있는데 이렇게 연속 반복적으로 설계되어 있는 반도체칩(2)들을 사용가능하도록 하기 위하여 반도체칩(2)을 낱개로 절삭하는 웨이퍼소잉공정을 실행하게 된다. 이때 상기 웨이퍼(1)를 낱개의 반도체칩(2)으로 분리하기 위해서는 이 웨이퍼(1)를 링상의 프레임(20)에 부착되어 지지되는 웨이퍼접착테이프(3)의 상면에 부착하되, 소잉작업시 반도체칩(2)의 자연분리가 발생하지 않도록 상당한 접착력을 보지하도록 웨이퍼(1)를 견고히 접착한 후, 소정의 절단공구(Saw)를 사용하여 웨이퍼접착테이프(3) 상면에 부착된 웨이퍼(1)를 정해진 프로그램에 의거하여 소잉하게 된다.That is, in the wafer 1, a large number of semiconductor chips 2 having the same configuration are designed and mounted at regular intervals. In order to enable the semiconductor chips 2 that are designed repeatedly and repeatedly, the semiconductor chips 2 may be used. The wafer sawing process of cutting individually is performed. At this time, in order to separate the wafer 1 into individual semiconductor chips 2, the wafer 1 is attached to the upper surface of the wafer adhesive tape 3 which is attached to and supported by the ring-shaped frame 20. After the wafer 1 is firmly adhered so as to maintain a significant adhesive force so that the natural separation of the semiconductor chip 2 does not occur, the wafer 1 attached to the upper surface of the wafer adhesive tape 3 using a predetermined cutting tool (Saw) ) According to the designated program.
따라서, 이러한 웨이퍼소잉공정을 마친 상태에서의 웨이퍼(1) 형태는 도 1의 예시와 같이 웨이퍼(1)가 바둑판 모양으로 절단되어 수많은 반도체칩(2)이 웨이퍼접착테이프(3)에 붙어 있는 상태가 된다.Therefore, in the state of completing the wafer sawing process, the shape of the wafer 1 is a state in which the wafer 1 is cut in a checkerboard shape as shown in FIG. 1 and a number of semiconductor chips 2 are attached to the wafer adhesive tape 3. Becomes
이와 같이 웨이퍼소잉공정이 끝나게 되면 별도의 진공흡착구(4)를 이용하여 웨이퍼접착테이프(3)에 붙어 있는 낱개의 반도체칩(2)을 하나 하나 떼어내게 되는데(웨이퍼접착테이프(3)에서 반도체칩(2)을 분리하는 공정 수행), 이때 각각의 반도체칩(2)들은 소잉가공 과정을 충분히 견딜 수 있을 정도로 상당한 접착력으로 웨이퍼접착테이프(3)에 접착되어 있는 관계로(여기서 반도체칩의 크기가 작으면 작을수록 접착강도는 강해야 함) 소잉가공된 반도체칩(2)들을 진공흡착구(4)의 흡착력만으로는 용이하게 떼어낼 수 없기 때문에, 반도체칩의 분리보조수단으로서 소위 이젝션장치를 사용하게 된다. 즉 이 이젝션장치를 통하여 웨이퍼접착테이프(3)와 반도체칩(2)과의 접착상태를 부분적으로 약화시키거나 분리시킨 상태에서 진공흡착구(4)의 흡착력으로 반도체칩(2)을 웨이퍼접착테이프(3)로부터 완전히 떼어내어(분리시켜) 다음공정인 다이어태치공정(리드프레임의 반도체칩탑재판에 반도체칩을 부착)으로 공급함으로써 반도체패키지의 제조공정이 연속적으로 진행되는 것이다.When the wafer sawing process is completed as described above, the semiconductor chips 2 attached to the wafer adhesive tape 3 are separated one by one using a separate vacuum suction hole 4 (the semiconductor in the wafer adhesive tape 3). In this case, each semiconductor chip 2 is adhered to the wafer adhesive tape 3 with a significant adhesive force enough to withstand the sawing process (where the size of the semiconductor chip is performed). The smaller the smaller, the stronger the adhesive strength should be.) Since the sawed semiconductor chips 2 cannot be easily removed only by the adsorption force of the vacuum suction port 4, use a so-called ejection apparatus as a separation aid of the semiconductor chips. do. That is, the semiconductor chip 2 is attached to the wafer adhesive tape by the suction force of the vacuum suction port 4 in the state in which the adhesion state between the wafer adhesive tape 3 and the semiconductor chip 2 is partially weakened or separated through the ejection apparatus. The semiconductor package manufacturing process is continuously performed by completely removing (separating) from (3) and supplying it to the next step of the attach process (attaching the semiconductor chip to the semiconductor chip mounting plate of the lead frame).
그런데, 종래에는 이러한 반도체칩을 부분적으로 떼어내기 위한 분리보조수단을 적용함에 있어서, 도 3a와 도 3b의 예시에서 보는 바와 같이 하나 또는 몇 개의 첨예한 니들핀(5)을 구비한 이잭션장치를 사용하거나 또는 2단계로 작동하는 2중의 니들핀(6)(6′)을 구비한 이젝션장치를 사용하여 웨이퍼접착테이프(3) 위에 붙어 있는 반도체칩(2)을 밑에서 위로 치켜 올리는 방법을 통해 반도체칩(2)이 웨이퍼접착테이프(3)에서 부분적으로 떨어지도록 하는 방법을 주로 사용해 왔었다.By the way, in the conventional application of the separation aid means for partially removing such a semiconductor chip, as shown in the examples of Figs. 3a and 3b, an ejection device having one or several sharp needle pins 5 is provided. By using the ejection device having double needle pins 6, 6 'operated in two steps or by lifting the semiconductor chip 2 on the wafer adhesive tape 3 from the bottom up. The method in which the chip 2 partially falls off the wafer adhesive tape 3 has been mainly used.
그러나 상기와 같이, 분리보조수단으로써 첨예한 니들핀(5)(6)(6′)을 구비한 이잭션장치를 사용하는 경우에는 반도체칩(2)의 크기에 따라 니들핀(5)(6)(6′)의 직경이나 끝단부의 모양처리 및 구조를 변경해야 하고, 또한 니들핀(5)(6)(6′)의 인출속도와 강도 등을 정확하게 조절하는데에 따른 곤란함이 있어 자칫 반도체칩(2)의 이면에 니들핀자국(흡집)을 남기게 되고, 심한 경우에는 반도체칩(2)에 크랙(Crack; 금이 감)을 유발시키는 등 반도체칩(2)을 손상시키게 되고, 진공흡착구(4)를 통한 반도체칩(2)의 픽업실패를 초래하는 등 반도체칩의 픽업방법에 상당한 문제점으로 지적되어 왔었다.As described above, however, in the case of using an ejection device having sharp needle pins 5, 6, and 6 'as separate assisting means, the needle pins 5 and 6 are formed according to the size of the semiconductor chip 2; 6 '), the shape and the shape of the end portion need to be changed, and the pin pins 5, 6, and 6' have difficulty in accurately controlling the withdrawal speed and strength. Needle pin marks (absorption) are left on the back surface of the chip 2, and in severe cases, the semiconductor chip 2 is damaged by causing cracks in the semiconductor chip 2, and vacuum adsorption is performed. It has been pointed out as a significant problem in the method of picking up a semiconductor chip, such as causing a pickup failure of the semiconductor chip 2 through the sphere 4.
즉, 상기 니들핀(5)(6)(6′)이 픽업할 반도체칩(2)이 접착된 웨이퍼접착테이프(3)의 저면을 약하게 밀게 되면 반도체칩(2)과 웨이퍼접착테이프(3) 간의 접착력을 이기지 못하여 반도체칩(2)이 웨이퍼접착테이프(3)로부터 용이하게 분리되지 않는 반면, 니들핀(5)(6)(6′)이 픽업할 반도체칩(2)이 접착된 웨이퍼접착테이프(3)의 저면을 너무 강하게 타격하여 밀어 올리면 반도체칩(2)은 쉽게 분리되지만 반도체칩(2)에 치명적인 손상을 입히게 되는 문제가 발생하게 된다.That is, when the needle pins 5, 6, 6 ′ weakly push the bottom surface of the wafer adhesive tape 3 to which the semiconductor chip 2 to be picked up is weakly pushed, the semiconductor chip 2 and the wafer adhesive tape 3 are pressed. While the semiconductor chip 2 is not easily separated from the wafer adhesive tape 3 because it cannot overcome the adhesion between the wafers, the wafer adhesive with the semiconductor chip 2 to be picked up by the needle pins 5, 6, 6 ′ is bonded. If the bottom surface of the tape 3 is pushed too hard and pushed up, the semiconductor chip 2 is easily detached, but a problem occurs that causes fatal damage to the semiconductor chip 2.
이에, 본 발명에서는 이러한 니들핀의 타격에 의하여 반도체칩을 분리하는 분리보조수단에 의존하는 방식만을 통해서는 반도체칩을 안전하고 용이하게 분리할 수 없다는 점에 착안하여 보다 안전하게 반도체칩을 픽업할 수 있는 방법 및 분리보조수단으로서의 이젝션장치를 발명하게 된 것으로써,Therefore, the present invention can pick up the semiconductor chip more safely by noting that the semiconductor chip cannot be safely and easily separated only by the method of relying on the separating aid means for separating the semiconductor chip by the hitting of the needle pin. Method and an ejection apparatus as a separation aid,
본 발명의 목적은 웨이퍼접착테이프에 붙어 있는 반도체칩에 직접적인 충격을 줌이 없이 반도체칩과 웨이퍼접착테이프 간의 접착력을 약화시키거나 부분분리가 진행되도록 하여 반도체칩의 손상없이 웨이퍼접착테이프로부터 반도체칩의 원만한 분리가 실현될 수 있도록 하는데 있으며, 또한 반도체칩에 가해지는 힘이 반도체칩(2)에 충격을 주지 않는 범위내에서 작용하도록 하여 반도체칩(2)과 웨이퍼접착테이프(3)간의 부분분리가 진행되도록 함으로써 반도체칩(2)의 손상없이 웨이퍼접착테이프(3)로부터 반도체칩(2)의 안전한 흡착분리가 이루어질 수 있도록 하는데 목적이 있는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to weaken the adhesive force between the semiconductor chip and the wafer adhesive tape or to perform partial separation without directly impacting the semiconductor chip attached to the wafer adhesive tape so that the semiconductor chip is removed from the wafer adhesive tape without damaging the semiconductor chip. Smooth separation can be realized, and the force applied to the semiconductor chip operates within a range that does not impact the semiconductor chip 2 so that partial separation between the semiconductor chip 2 and the wafer adhesive tape 3 can be achieved. It is intended to allow the safe adsorptive separation of the semiconductor chip 2 from the wafer adhesive tape 3 without damaging the semiconductor chip 2.
도 1은 웨이퍼소잉공정을 마친 웨이퍼의 형태를 예시한 평면구성도1 is a plan view illustrating the shape of a wafer after a wafer sawing process;
도 2는 종래 웨이퍼 상태에서 재단(소잉)된 반도체칩을 픽업하는 방법을 예시한 공정도2 is a process diagram illustrating a method of picking up a cut (sawed) semiconductor chip in a conventional wafer state;
도 3a∼3b는 종래 니들핀 구조의 이젝션장치를 나타낸 것으로써,3A to 3B show an ejection apparatus having a conventional needle pin structure,
도 3a는 하나의 첨예한 니들핀을 구비한 경우3a shows the case with one sharp needle pin
도 3b는 2단계로 작동하는 2중의 니들핀을 구비한 경우3b is provided with double needle pins operating in two steps
도 4는 본 발명에 의한 반도체칩 픽업방법을 예시한 공정도4 is a process diagram illustrating a semiconductor chip pickup method according to the present invention.
도 5a ∼ 5c는 본 발명에 있어서 접착력약화수단을 통해 접착력이 크게 약화된 반도체칩을 진공흡착구로 픽업하는 과정을 보인 예시도로써,5A to 5C are exemplary views illustrating a process of picking up a semiconductor chip whose adhesive strength is greatly weakened through the adhesive weakening means to the vacuum suction port according to the present invention.
도 5a는 웨이퍼접착테이프 전체를 냉각시켜 모든 반도체칩의 접착력을 크게 약화시킨 상태에서 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보인 예시도5A is an exemplary view illustrating a process of picking up a semiconductor chip using a vacuum suction port while cooling the entire wafer adhesive tape and greatly weakening the adhesion of all the semiconductor chips.
도 5b는 웨이퍼접착테이프 일부영역을 냉각시켜 그 영역에 속하는 반도체칩의 접착력을 크게 약화시킨 상태에서 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보인 예시도5B is an exemplary view illustrating a process of picking up a semiconductor chip using a vacuum suction hole in a state in which a portion of the wafer adhesive tape is cooled to significantly weaken the adhesive force of the semiconductor chip in the region.
도 5c는 픽업할 낱개의 반도체칩이 접착된 부위만을 냉각시켜 그 반도체칩의 접착력만을 크게 약화시킨 상태에서 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보인 예시도5C is an exemplary view illustrating a process of picking up a semiconductor chip using a vacuum suction port in a state in which only a portion of the semiconductor chip to be picked up is cooled to significantly weaken the adhesive force of the semiconductor chip.
도 6a ∼ 6c는 본 발명에 있어서 접착력약화수단과 부분분리수단를 통해 접착력을 약화시킴과 동시에 반도체칩을 웨이퍼접착테이프로부터 부분분리시켜 진공흡착구로 픽업하는 과정을 보인 다른 실시예로써,6A to 6C illustrate another embodiment of the present invention, in which the adhesive force is weakened through the adhesive weakening means and the partial separating means, and at the same time, the semiconductor chip is partially separated from the wafer adhesive tape to pick up the vacuum suction port.
도 6a는 웨이퍼접착테이프 전체를 냉각시켜 모든 반도체칩의 접착력을 약화시킨 상태에서 부분분리수단을 통해 픽업할 반도체칩을 부분분리시킨 후 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보인 예시도6A is an exemplary view illustrating a process of picking up a semiconductor chip using a vacuum suction port after partially separating a semiconductor chip to be picked up through a partial separation means while cooling the entire wafer adhesive tape to weaken the adhesive strength of all the semiconductor chips.
도 6b는 웨이퍼접착테이프 일부영역을 냉각시켜 그 영역에 속하는 반도체칩의 접착력을 약화시킨 상태에서 부분분리수단을 통해 픽업할 반도체칩을 부분분리시킨 후 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보인 예시도6B illustrates a process of partially picking up a semiconductor chip to be picked up through a partial separating means while cooling a portion of a wafer adhesive tape to weaken the adhesive force of a semiconductor chip belonging to the region, and then picking up the semiconductor chip using a vacuum suction port. Illustrated diagram
도 6c는 픽업할 낱개의 반도체칩이 접착된 부위만을 냉각시켜 그 반도체칩의 접착력만을 약화시킨 상태에서 부분분리수단을 통해 픽업할 반도체칩을 부분분리시킨 후 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보인 예시도6C shows that the semiconductor chips to be picked up are partially separated by means of a partial separation means after cooling only the portion where the respective semiconductor chips to be picked up are bonded and weakened only the adhesive force of the semiconductor chips. Illustrated process
도 7a ∼ 7b는 본 발명에 있어서 고압기체와 진공흡착구를 사용하여 웨이퍼접착테이프에 접착된 반도체칩을 픽업하는 과정을 보인 다른 실시예로써,7A to 7B illustrate another example of a process of picking up a semiconductor chip bonded to a wafer adhesive tape using a high pressure gas and a vacuum suction port according to the present invention.
도 7a는 픽업할 낱개의 반도체칩이 접착된 부위에 고압냉각기체를 토출시켜 반도체칩을 부분분리시킨 후 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보여 주는 예시도7A is an exemplary view showing a process of picking up a semiconductor chip using a vacuum suction port after discharging the high-pressure cooling gas to a portion where the semiconductor chips to be picked up are adhered to each other.
도 7b는 픽업할 낱개의 반도체칩이 접착된 부위에 고압비냉각기체를 토출시켜 반도체칩을 부분분리시킨 후 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보인 예시도7B is an exemplary view illustrating a process of picking up a semiconductor chip using a vacuum suction port after partially separating the semiconductor chip by discharging a high-pressure uncooled gas to a portion where the semiconductor chips to be picked up are bonded.
도 8a는 본 발명에 있어서 픽업할 낱개의 반도체칩이 접착된 부위에 고압냉각기체를 분사함과 동시에 칩고정수단을 통해 인접하는 반도체칩을 고정한 상태에서 진공흡착구를 이용해 반도체칩을 픽업하는 과정을 보인 다른 실시예의 예시도8A illustrates a process of picking up a semiconductor chip using a vacuum suction port while injecting a high-pressure cooling gas into a portion to which individual semiconductor chips to be picked up are bonded, and at the same time fixing adjacent semiconductor chips through a chip fixing means. Example of another embodiment showing
도 8b는 동 평면 개략도8B is a copper plane schematic view
(도면의 주요부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)
1 : 웨이퍼 2, 2′ : 반도체칩1: wafer 2, 2 ′: semiconductor chip
3 : 웨이퍼접착테이프 4 : 진공흡착구3: wafer adhesive tape 4: vacuum suction port
5 : 니들핀 6, 6′: 니들핀5: needle pin 6, 6 ′: needle pin
7 : 접착력약화수단 8 : 부분분리수단7: adhesion weakening means 8: partial separation means
9 : 칩고정수단 10 : 기체분사장치9 chip fixing means 10 gas injection device
20 : 프레임 30 : 진공흡착구20: frame 30: vacuum suction port
Z : 일정영역Z: certain area
상기와 같은 목적을 달성하기 위한 본 발명의 반도체패키지 제조방법 및 이젝션장치는 다음과 같은 특징을 제공한다.The semiconductor package manufacturing method and the ejection apparatus of the present invention for achieving the above object provides the following features.
소잉되어 낱개화된 반도체칩(2)이 다수 접착되어 있는 웨이퍼접착테이프(3)로부터 진공흡착구(4)를 사용하여 낱개의 반도체칩(2)을 떼어내는(분리하는) 반도체칩의 픽업방법을 실현함에 있어서,A method of picking up a semiconductor chip in which a plurality of semiconductor chips 2 are separated (isolated) using a vacuum suction port 4 from a wafer adhesive tape 3 to which a plurality of sawed and separated semiconductor chips 2 are bonded. In realizing
소잉된 반도체칩(2)이 다수 부착되어 있는 웨이퍼접착테이프(3)에 접착력약화수단(7)을 가하여 상기 웨이퍼접착테이프(3)를 냉각시켜 반도체칩(2)과 웨이퍼접착테이프(3)간의 접착력을 약화시키는 접착력약화공정과, 접착력이 크게 약화되어 웨이퍼접착테이프(3) 위에 붙어 있는 낱개의 반도체칩(2)을 공지의 진공흡착구(4)로 흡착하여 웨이퍼접착테이프(3)로부터 반도체칩(2)을 완전 분리하는 반도체칩흡착분리공정을 포함하는 것을 특징으로 하며,An adhesive force weakening means 7 is applied to the wafer adhesive tape 3 to which a large number of sawed semiconductor chips 2 are attached, thereby cooling the wafer adhesive tape 3 to between the semiconductor chip 2 and the wafer adhesive tape 3. A weakening process of weakening the adhesive force, and a weakening of the adhesive force, the individual semiconductor chips 2 adhering on the wafer adhesive tape 3 are adsorbed by a known vacuum suction port 4, and the semiconductor is discharged from the wafer adhesive tape 3 to the semiconductor. It characterized in that it comprises a semiconductor chip adsorption separation process for completely separating the chip (2),
또한, 상기 웨이퍼접착테이프(3)의 밑면에 접착력약화수단(7)을 가하여 웨이퍼접착테이프(3)를 냉각시켜 반도체칩(2)들과 웨이퍼접착테이프(3) 간 접착력을 약화시킨 상태에서 부분분리수단(8)을 사용하여 픽업할 반도체칩(2)을 밀어 올려 픽업할 반도체칩(2)의 부분분리가 실현되도록 한 후, 공지의 진공흡착구(4)로 흡착하여 웨이퍼접착테이프(3)로부터 반도체칩(2)을 완전 분리할 수 있도록 함을 특징으로 하고,In addition, by applying an adhesive force weakening means (7) to the bottom surface of the wafer adhesive tape (3) to cool the wafer adhesive tape (3) in a state of weakening the adhesive force between the semiconductor chip (2) and the wafer adhesive tape (3) By using the separating means 8, the semiconductor chip 2 to be picked up is pushed up so that partial separation of the semiconductor chip 2 to be picked up is realized, followed by adsorption with a known vacuum suction port 4, and then a wafer adhesive tape 3 To completely separate the semiconductor chip 2 from
또한, 진공흡착구(4)로 픽업할 반도체칩(2)을 흡착함에 있어서, 웨이퍼접착테이프(3)의 밑면 중 픽업할 반도체칩(2)이 접착된 한정된 부분만을 고압기체로 강하게 브로잉(집중분사)하여 픽업할 반도체칩(2)의 접착력을 약화시킴과 동시에 반도체칩(2)의 부분분리가 진행되도록 한 후, 공지의 진공흡착구(4)로 흡착하여 웨이퍼접착테이프(3)로부터 반도체칩(2)을 완전 분리할 수 있도록 함을 특징으로 하며,Further, in adsorbing the semiconductor chip 2 to be picked up by the vacuum suction port 4, only a limited portion of the bottom surface of the wafer adhesive tape 3 to which the semiconductor chip 2 is to be picked up is strongly blown with a high pressure gas ( Concentrated injection) to weaken the adhesive force of the semiconductor chip 2 to be picked up, and at the same time to allow partial separation of the semiconductor chip 2 to proceed, it is adsorbed by a known vacuum suction port 4 and then removed from the wafer adhesive tape 3. Characterized in that the semiconductor chip (2) can be completely separated,
또한, 접착력약화수단(7)과 부분분리수단(8)을 동시에 제공하는 고압기체를 사용하여 웨이퍼접착테이프(3)로부터 반도체칩(2)을 분리함에 있어서, 픽업할 반도체칩(2)이 접착된 한정된 부분만을 고압기체로 강하게 브로잉(집중분사)하여 픽업할 반도체칩(2)의 접착력을 약화시킴과 동시에 픽업할 반도체칩(2)과 인접하는 타 반도체칩(2)의 움직임을 막기 위하여 칩고정수단(9)으로 인접하는 타 반도체칩(2)을 흡착고정토록 하는 것을 특징으로 한다.In addition, in separating the semiconductor chip 2 from the wafer adhesive tape 3 by using a high-pressure gas which provides the adhesion weakening means 7 and the partial separation means 8 simultaneously, the semiconductor chip 2 to be picked up is bonded. In order to weaken the adhesive force of the semiconductor chip 2 to be picked up by intensely blowing (intensive injection) only a limited part of the high pressure gas, and to prevent the movement of the semiconductor chip 2 adjacent to the semiconductor chip 2 to be picked up. The chip holding means 9 is characterized by adsorbing and fixing other semiconductor chips 2 adjacent to each other.
따라서, 본 발명에 의하면 반도체칩(2)이 붙어 있는 웨이퍼접착테이프(3)에 접착력약화수단(7)을 가하거나 또는 접착력약화수단(7)을 가한 상태에서 부분분리수단(8)을 부가하거나 또는 고압기체를 사용하는 분리보조수단을 통하여 반도체칩(2)의 접착력이 약화되어 부분분리가 진행된 상태에서 진공흡착에 의한 반도체칩(2)의 완전 분리를 실현함으로써 반도체칩(2)에 직접적인 충격을 주지 않으면서 웨이퍼접착테이프(3)에서 반도체칩(2)을 용이하게 흡착분리해 낼 수 있어 궁극적으로 반도체패키지의 신뢰성을 제고하는 효과를 제공하게 되는 것이다.Therefore, according to the present invention, the adhesion weakening means 7 is applied to the wafer adhesive tape 3 to which the semiconductor chip 2 is attached, or the partial separation means 8 is added while the adhesion weakening means 7 is applied. Alternatively, a direct impact on the semiconductor chip 2 is realized by realizing the complete separation of the semiconductor chip 2 by vacuum adsorption in a state in which the adhesive force of the semiconductor chip 2 is weakened through partial separation means using a high-pressure gas. The semiconductor chip 2 can be easily separated and separated from the wafer adhesive tape 3 without ultimately providing an effect of ultimately increasing the reliability of the semiconductor package.
이하, 본 발명을 첨부된 예시도면을 통해 보다 구체적으로 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
(실시예 1)(Example 1)
도 4는 본 발명에 의한 반도체칩의 픽업방법을 예시한 공정도이며, 도 5a ∼ 5c는 본 발명에 있어서 접착력약화수단(7)을 통해 접착력이 크게 약화된 반도체칩(2)을 공지의 진공흡착구(4)로 픽업하여 분리해내는 과정을 보인 예시도로써,4 is a process diagram illustrating a method of picking up a semiconductor chip according to the present invention, and FIGS. 5A to 5C are known vacuum adsorption of a semiconductor chip 2 whose adhesive strength is greatly weakened by the adhesive force weakening means 7 according to the present invention. As an exemplary view showing the process of picking up and separating a sphere (4),
본 발명에 의한 반도체칩(2)의 분리공정은, 크게 자재세팅공정과, 냉각기체를 사용하여 웨이퍼접착테이프(3)에 접착되어 있는 반도체칩(2)의 접착력을 크게 약화시키기 위한 접착력약화공정과, 접착력이 약화된 반도체칩(2)을 공지의 진공흡착구(4)를 사용하여 완전 분리해 내는 반도체칩흡착분리공정으로 이루어진다.The separation step of the semiconductor chip 2 according to the present invention includes a material setting step and a weakening step for greatly weakening the adhesive force of the semiconductor chip 2 adhered to the wafer adhesive tape 3 by using a cooling gas. And a semiconductor chip adsorption separation step of completely separating the semiconductor chip 2 whose adhesive strength is weakened by using a known vacuum suction port 4.
<자재세팅공정><Material setting process>
소잉작업이 완료된 자재(소잉된 다수의 반도체칩(2)들이 웨이퍼접착테이프(3) 윗면에 접착된 상태)를 반도체칩(2)의 분리작업이 용이하도록 이젝션장치와 진공흡착구(4)의 사이에 세팅한다.In order to facilitate the separation of the semiconductor chip 2, the material (the state in which the sawed semiconductor chips 2 are bonded to the upper surface of the wafer adhesive tape 3) of the sawing operation is completed. Set in between.
<접착력약화공정><Adhesive weakening process>
반도체칩(2)과 웨이퍼접착테이프(3) 간의 접착력을 약화시키기 위한 방법에는 웨이퍼접착테이프(3)의 전체를 냉각시키는 전체냉각방법과 정해진 일부영역(Z)만을 냉각시키는 일부영역냉각방법과 픽업할 반도체칩(2)의 접착부위만을 한정 냉각시키는 방법이 있다.The method for weakening the adhesive force between the semiconductor chip 2 and the wafer adhesive tape 3 includes a total cooling method of cooling the entire wafer adhesive tape 3, a partial region cooling method of cooling only a predetermined partial region Z, and a pickup. There is a method of limited cooling only the bonding portion of the semiconductor chip 2.
웨이퍼접착테이프의 전체냉각Full cooling of wafer adhesive tape
도 5a의 예시와 같이, 다수의 반도체칩(2)들이 접착되어 있는 웨이퍼접착테이프(3)에 접착력약화수단(7)으로서의 냉각기체(냉각된 공기 및 가스)를 분사하여 웨이퍼접착테이프(3)를 전체적으로 냉각시킨다. 즉 냉각기체를 분사하는 기체분사장치(10)를 웨이퍼접착테이프(3)로부터 멀리 이격시킨 상태에서 냉각기체를 분사하면 냉각기체가 웨이퍼접착테이프(3)의 밑면 전체로 확산되면서 웨이퍼접착테이프(3)는 전체적으로 냉각이 되게 된다. 이렇게 웨이퍼접착테이프(3)가 전체적으로 냉각이 되면 온도변화에 따라 수축력이 큰 이 웨이퍼접착테이프(3)는 순간적으로 수축을 하게 되므로 상기 웨이퍼접착테이프(3) 위에 접착되어 있는 반도체칩(2)은 접착력이 크게 약화된 상태가 된다.As illustrated in FIG. 5A, a wafer gas (cooled air and gas) serving as an adhesive force weakening means 7 is injected onto a wafer adhesive tape 3 to which a plurality of semiconductor chips 2 are bonded. Cool the whole. That is, when the gas is sprayed in a state where the gas injection device 10 for injecting the cooling gas is spaced apart from the wafer adhesive tape 3, the cooling gas is diffused to the entire underside of the wafer adhesive tape 3, and thus the wafer adhesive tape 3 is applied. ) Will be cooled as a whole. When the wafer adhesive tape 3 is cooled as a whole, the wafer adhesive tape 3 having a large shrinkage force contracts instantaneously as the temperature changes, so that the semiconductor chip 2 adhered on the wafer adhesive tape 3 Adhesion is greatly weakened.
웨이퍼첩착테이프의 일부영역냉각Cooling of Partial Area of Wafer Bonding Tape
도 5b의 예시와 같이, 다수의 반도체칩(2)들이 접착되어 있는 웨이퍼접착테이프(3)에 일정영역(Z)을 정하여 이 정해진 일정영역(Z)에 접착력약화수단(7)으로서의 냉각기체(냉각된 공기 및 가스)를 분사하여 웨이퍼접착테이프(3)의 일정영역(Z)만을 냉각시킨다. 즉 냉각기체를 분사하는 기체분사장치(10)를 웨이퍼접착테이프(3)의 일정영역(Z)에 근접시켜 분사하게 되면 냉각기체가 웨이퍼접착테이프(3)의 정해진 일정영역(Z)만을 집중 냉각하게 되므로 웨이퍼접착테이프(3)의 정해진 일정영역(Z)만이 냉각되게 된다. 이렇게 냉각기체의 집중적인 영향을 받은 웨이퍼접착테이프(3)의 일정영역(Z) 부분에는 순간적인 수축변화가 발생하므로 상기 웨이퍼접착테이프(3) 위에 접착되어 있는 반도체칩(2)을 접착력이 크게 약화된 상태가 된다.As illustrated in FIG. 5B, the cooling gas as the weakening force means 7 is defined in the predetermined region Z by defining a predetermined region Z on the wafer adhesive tape 3 to which the plurality of semiconductor chips 2 are adhered. Cooled air and gas) are injected to cool only a predetermined region Z of the wafer adhesive tape 3. That is, when the gas injection device 10 for injecting the cooling gas is injected close to the predetermined region Z of the wafer adhesive tape 3, the cooling gas concentrates and cools only the predetermined predetermined region Z of the wafer adhesive tape 3. Therefore, only a predetermined predetermined region Z of the wafer adhesive tape 3 is cooled. As a result, instantaneous shrinkage changes occur in a portion Z of the wafer adhesive tape 3 affected by the intensive influence of the cooling gas, so that the adhesion force of the semiconductor chip 2 adhered to the wafer adhesive tape 3 is greatly increased. It is in a weakened state.
픽업할 반도체칩이 접착된 부분만의 냉각Cooling only the part where the semiconductor chip to be picked up is bonded
도 5c의 예시와 같이, 다수의 반도체칩(2)들이 접착되어 있는 웨이퍼접착테이프(3) 중 픽업할 반도체칩(2)이 접착되어 있는 부분에만 접착력약화수단(7)으로서의 냉각기체(냉각된 공기 및 가스)를 분사하여 그 부분의 접착력을 약화시킨다. 즉 냉각기체를 분사하는 기체분사장치(10)를 웨이퍼접착테이프(3)에 거의 밀착시킨 상태에서 픽업할 반도체칩(2)이 접착되어 있는 부분에만 냉각기체를 분사하게 되면 냉각기체가 웨이퍼접착테이프(3)의 극히 한정된 부분만을 냉각하게 된다. 이렇게 냉각기체의 집중적인 영향을 받은 부분의 웨이퍼접착테이프(3)에는 순간적인 수축변화가 발생하므로 픽업할 반도체칩(2)만이 웨이퍼접착테이프(3)에서 접착력이 크게 약화된 상태가 된다.As illustrated in FIG. 5C, a cooling gas as the weakening force means 7 is applied only to a portion of the wafer adhesive tape 3 to which the plurality of semiconductor chips 2 are bonded to which the semiconductor chip 2 to be picked up is bonded (cooled). Air and gas) to weaken the adhesion of the part. That is, when the gas is sprayed only to a portion where the semiconductor chip 2 to be picked up is adhered to the wafer adhesive tape 3 while the gas injection device 10 for injecting the cooling gas is in close contact with the wafer adhesive tape 3, the cooling gas is attached to the wafer adhesive tape. Only the very limited part of (3) is cooled. Thus, the instantaneous shrinkage change occurs in the wafer adhesive tape 3 of the intensively influenced portion of the cooling gas, so that only the semiconductor chip 2 to be picked up is greatly weakened in the adhesive strength of the wafer adhesive tape 3.
<반도체칩흡착분리공정><Semiconductor chip adsorption separation process>
접착력약화수단(7)인 냉각기체에 의하여 반도체칩(2)과 웨이퍼접착테이프(3) 간의 접착력이 크게 약화된 상태에서 공지의 진공흡착구(4)를 사용하여 접착력이 크게 약화된 픽업할 낱개의 반도체칩(2)을 흡착하여 웨이퍼접착테이프(3)로부터 하나 하나의 반도체칩(2)을 떼어 내는 작업을 수행한다. 따라서 큰 접착저항 없이 웨이퍼접착테이프(3)로부터 반도체칩(2)은 실패없이 쉽게 분리해 낼 수 있는 것이다.In the state where the adhesion force between the semiconductor chip 2 and the wafer adhesive tape 3 is greatly weakened by the cooling gas, which is the weakening force of the adhesive force 7, the pick-up to which the adhesive force is greatly weakened by using a well-known vacuum suction port 4 is used. The semiconductor chip 2 is adsorbed to remove the semiconductor chip 2 from the wafer adhesive tape 3. Therefore, the semiconductor chip 2 can be easily separated from the wafer adhesive tape 3 without a large adhesive resistance without failure.
(실시예 2)(Example 2)
도 6a ∼ 6c는 본 발명에 있어서 접착력약화수단(7)을 통해 반도체칩(2)의 접착력을 약화시킴과 동시에 부분분리수단(8)을 통해 반도체칩(2)을 웨이퍼접착테이프(3)로부터 부분분리시켜 공지의 진공흡착구(4)로 반도체칩(20을 픽업하는 과정의 다른 실시에를 보인 예시도로써,6A to 6C show that in the present invention, the adhesive force of the semiconductor chip 2 is weakened by the adhesive force weakening means 7 and the semiconductor chip 2 is removed from the wafer adhesive tape 3 through the partial separation means 8. As an exemplary diagram showing another embodiment of the process of picking up the semiconductor chip 20 by the partial separation by a known vacuum suction port 4,
동 반도체칩(2)의 분리공정은, 크게 자재세팅공정과, 접착력약화수단(7)인 냉각기체를 사용하여 웨이퍼접착테이프(3)에 접착되어 있는 반도체칩(2)의 접착력을 약화시킴과 동시에 픽업할 반도체칩(2)이 접착되어 있는 웨이퍼접착테이프(3)의 밑면을 부분분리수단(8)인 니들핀을 사용하여 웨이퍼접착테이프(3)로부터 반도체칩(2)이 부분분리가 이루어지도록 하는 접착력약화 및 반도체칩부분분리공정과, 이렇게 부분분리가 진행된 픽업할 반도체칩(2)을 공지의 진공흡착구(4)를 사용하여 완전 분리해 내는 반도체칩흡착분리공정으로 이루어진다.The separation step of the semiconductor chip 2 is to greatly weaken the adhesion force of the semiconductor chip 2 adhered to the wafer adhesive tape 3 by using the material setting step and the cooling gas which is the weakening means of the adhesive force 7. At the same time, the bottom surface of the wafer adhesive tape 3 to which the semiconductor chip 2 to be picked up is bonded to the semiconductor chip 2 from the wafer adhesive tape 3 by using a needle pin as the partial separating means 8. The adhesive force weakening and the semiconductor chip partial separation process, and the semiconductor chip adsorption separation process of completely separating the semiconductor chip 2 to be picked up in this way using a known vacuum suction port 4 are performed.
<자재세팅공정><Material setting process>
소잉작업이 완료된 자재(소잉된 다수의 반도체칩(2)들이 웨이퍼접착테이프(3) 윗면에 접착된 상태)를 반도체칩(2)의 분리작업이 용이하도록 이젝션장치와 진공흡착구(4)의 사이에 세팅한다.In order to facilitate the separation of the semiconductor chip 2, the material (the state in which the sawed semiconductor chips 2 are bonded to the upper surface of the wafer adhesive tape 3) of the sawing operation is completed. Set in between.
<접착력약화 및 반도체칩부분분리공정><Adhesion weakening and semiconductor chip part separation process>
웨이퍼접착테이프의 전체냉각 후 반도체칩의 부분분리Partial Separation of Semiconductor Chip After Total Cooling of Wafer Adhesive Tape
도 6a의 예시와 같이, 다수의 반도체칩(2)들이 접착되어 있는 웨이퍼접착테이프(3)에 접착력약화수단(7)으로서의 냉각기체(냉각된 공기 및 가스)를 분사하여 웨이퍼접착테이프(3)를 전체적으로 냉각시킨다. 즉 냉각기체를 분사하는 기체분사장치(10)를 웨이퍼접착테이프(3)로부터 멀리 이격시킨 상태에서 냉각기체를 분사하면 냉각기체가 웨이퍼접착테이프(3)의 밑면 전체로 확산되면서 웨이퍼접착테이프(3)는 전체적으로 냉각이 되게 된다. 이렇게 웨이퍼접착테이프(3)가 전체적으로 냉각이 되면 온도변화에 따라 수축력이 큰 이 웨이퍼접착테이프(3)는 순간적으로 수축을 하게 되므로 상기 웨이퍼접착테이프(3) 위에 접착되어 있는 반도체칩(2)은 접착력이 약화된 상태가 된다.As shown in FIG. 6A, a wafer gas (cooled air and gas) serving as a weakening means 7 is sprayed onto a wafer adhesive tape 3 to which a plurality of semiconductor chips 2 are bonded. Cool the whole. That is, when the gas is sprayed in a state where the gas injection device 10 for injecting the cooling gas is spaced apart from the wafer adhesive tape 3, the cooling gas is diffused to the entire underside of the wafer adhesive tape 3, and thus the wafer adhesive tape 3 is applied. ) Will be cooled as a whole. When the wafer adhesive tape 3 is cooled as a whole, the wafer adhesive tape 3 having a large shrinkage force contracts instantaneously as the temperature changes, so that the semiconductor chip 2 adhered on the wafer adhesive tape 3 Adhesion is weakened.
이와 같이 반도체칩(2)의 접착상태가 약화된 상태에서 반도체칩(2)의 분리작업을 보다 안전하게 실시하기 위하여 픽업할 반도체칩(2)이 접착되어 있는 웨이퍼접착테이프(3)의 밑면을 부분분리수단(8)인 니들핀(끝단이 무딘 호형상)으로 약간 밀어 올려 웨이퍼접착테이프(3)에서 픽업할 반도체칩(2)의 부분분리가 진행되도록 한다.In this way, the lower surface of the wafer adhesive tape 3 to which the semiconductor chip 2 to be picked up is adhered in order to perform the separation operation of the semiconductor chip 2 in a state where the adhesion state of the semiconductor chip 2 is weakened. Slightly pushes up with the needle pin (dull arc shape) which is the separating means 8 so that partial separation of the semiconductor chip 2 to be picked up from the wafer adhesive tape 3 may proceed.
웨이퍼첩착테이프의 일부영역냉각 후 반도체칩의 부분분리Partial Separation of Semiconductor Chip After Cooling Partial Area of Wafer Bonding Tape
도 6b의 예시와 같이, 다수의 반도체칩(2)들이 접착되어 있는 웨이퍼접착테이프(3)에 일정영역(Z)을 정하여 이 정해진 일정영역(Z)에 접착력약화수단(7)으로서의 냉각기체(냉각된 공기 및 가스)를 분사하여 웨이퍼접착테이프(3)의 일정영역(Z)만을 냉각시킨다. 즉 냉각기체를 분사하는 기체분사장치(10)를 웨이퍼접착테이프(3)의 일정영역(Z)에 근접시켜 분사하게 되면 냉각기체가 웨이퍼접착테이프(3)의 정해진 일정영역(Z)만을 집중 냉각하게 되므로 웨이퍼접착테이프(3)의 정해진 일정영역(Z)만이 냉각되게 된다. 이렇게 냉각기체의 집중적인 영향을 받은 부분에는 순간적인 수축변화가 발생하므로 상기 웨이퍼접착테이프(3) 위에 접착되어 있는 반도체칩(2)을 접착력이 약화된 상태가 된다.As shown in FIG. 6B, the cooling gas as the weakening force means 7 is defined in the predetermined region Z by defining a predetermined region Z on the wafer adhesive tape 3 to which the plurality of semiconductor chips 2 are bonded. Cooled air and gas) are injected to cool only a predetermined region Z of the wafer adhesive tape 3. That is, when the gas injection device 10 for injecting the cooling gas is injected close to the predetermined region Z of the wafer adhesive tape 3, the cooling gas concentrates and cools only the predetermined predetermined region Z of the wafer adhesive tape 3. Therefore, only a predetermined predetermined region Z of the wafer adhesive tape 3 is cooled. Thus, since the momentary shrinkage change occurs in the intensively affected part of the cooling gas, the adhesive force of the semiconductor chip 2 adhered on the wafer adhesive tape 3 is weakened.
이와 같이 일정영역(Z)에 포함되어 있는 반도체칩(2)의 접착상태가 약화된 상태에서 반도체칩(2)의 분리작업을 보다 안전하게 실시하기 위하여 픽업할 반도체칩(2)이 접착되어 있는 웨이퍼접착테이프(3)의 밑면을 부분분리수단(8)인 니들핀(끝단이 무딘 호형상)으로 약간 밀어 올려 웨이퍼접착테이프(3)에서 픽업할 반도체칩(2)의 부분분리가 진행되도록 한다.In this way, the wafer to which the semiconductor chip 2 to be picked up is bonded in order to perform the separation operation of the semiconductor chip 2 in a state in which the adhesion state of the semiconductor chip 2 included in the predetermined region Z is weakened. The bottom surface of the adhesive tape 3 is slightly pushed up to the needle pin (dull arc shape), which is the partial separating means 8, so that the partial separation of the semiconductor chip 2 to be picked up from the wafer adhesive tape 3 proceeds.
픽업할 반도체칩이 접착된 부분만의 냉각 후 반도체칩의 부분분리Partial separation of the semiconductor chip after cooling only the part where the semiconductor chip to be picked up is bonded
도 6c의 예시와 같이, 다수의 반도체칩(2)들이 접착되어 있는 웨이퍼접착테이프(3) 중 픽업할 반도체칩(2)이 접착되어 있는 부분에만 접착력약화수단(7)으로서의 냉각기체(냉각된 공기 및 가스)를 분사하여 그 부분의 접착력을 약화시킨다. 즉 냉각기체를 분사하는 기체분사장치(10)를 웨이퍼접착테이프(3)에 거의 밀착시킨 상태에서 픽업할 반도체칩(2)이 접착되어 있는 부분에만 냉각기체를 분사하게 되면 냉각기체가 웨이퍼접착테이프(3)의 극히 한정된 부분만을 냉각하게 된다. 이렇게 냉각기체의 집중적인 영향을 받은 부분에는 순간적인 수축변화가 발생하므로 픽업할 반도체칩(2)만이 웨이퍼접착테이프(3)에서 접착력이 약화된 상태가 된다.As illustrated in FIG. 6C, a cooling gas as the weakening force of the adhesion weakening means 7 is provided only in a portion of the wafer adhesive tape 3 to which the plurality of semiconductor chips 2 are bonded to which the semiconductor chips 2 to be picked up are bonded. Air and gas) to weaken the adhesion of the part. That is, when the gas is sprayed only to a portion where the semiconductor chip 2 to be picked up is adhered to the wafer adhesive tape 3 while the gas injection device 10 for injecting the cooling gas is in close contact with the wafer adhesive tape 3, the cooling gas is attached to the wafer adhesive tape. Only the very limited part of (3) is cooled. In this way, since the momentarily shrinkage change occurs in the intensively influenced portion of the cooling gas, only the semiconductor chip 2 to be picked up is in a state in which the adhesive force of the wafer adhesive tape 3 is weakened.
이와 같이 픽업할 반도체칩(2)의 접착상태가 약화된 상태에서 반도체칩(2)의 분리작업을 보다 안전하게 실시하기 위하여 픽업할 반도체칩(2)이 접착되어 있는 웨이퍼접착테이프(3)의 밑면을 부분분리수단(8)인 니들핀(끝단이 무딘 호형상)으로 약간 밀어 올려 웨이퍼접착테이프(3)에서 픽업할 반도체칩(2)의 부분분리가 진행되도록 한다.Thus, the bottom surface of the wafer adhesive tape 3 to which the semiconductor chip 2 to be picked up is bonded in order to carry out the separation operation of the semiconductor chip 2 in a state where the adhesion state of the semiconductor chip 2 to be picked up is weakened. Is slightly pushed up to the needle pin (dull arc shape), which is the partial separating means 8, so that the partial separation of the semiconductor chip 2 to be picked up from the wafer adhesive tape 3 proceeds.
여기서, 반도체칩부분분리공정을 진행함에 있어서 부분분리수단(8)인 니들핀이 픽업할 반도체칩(2)을 밀어 올리는 힘(압력)은 접착력약화수단(7)으로서의 냉각기체으 영향으로 접착력이 약화된 반도체칩(2)이 웨이퍼접착테이프(3)에서 분리될 수 있는 정도의 압력이면 족하다 할 것이다.Here, in the semiconductor chip partial separation process, the force (pressure) for pushing up the semiconductor chip 2 to be picked up by the needle pin, which is the partial separation means 8, is due to the influence of the cooling gas as the weakening force 7. It will be sufficient if the weakened semiconductor chip 2 has a pressure enough to be separated from the wafer adhesive tape 3.
<반도체칩흡착분리공정><Semiconductor chip adsorption separation process>
접착력약화수단(7)과 부분분리수단(8)을 통하여 웨이퍼접착테이프(3)로부터 픽업할 반도체칩(2)의 부분분리가 진행된 상태에서 공지의 진공흡착구(4)를 사용하여 부분분리된 픽업할 낱개의 반도체칩(2)을 흡착하여 웨이퍼접착테이프(3)로부터 하나 하나의 반도체칩(2)을 떼어 내는 작업을 수행한다. 따라서 큰 접착저항 없이 웨이퍼접착테이프(3)로부터 반도체칩(2)은 실패없이 아주 쉽게 분리해 낼 수 있는 것이다.Partial separation was performed using a well-known vacuum suction port 4 in the state where partial separation of the semiconductor chip 2 to be picked up from the wafer adhesive tape 3 was carried out through the adhesion weakening means 7 and the partial separation means 8. The semiconductor chips 2 to be picked up are adsorbed to remove one semiconductor chip 2 from the wafer adhesive tape 3. Therefore, the semiconductor chip 2 can be easily separated from the wafer adhesive tape 3 without a large adhesive resistance without failure.
(실시예 3)(Example 3)
도 7a ∼ 7b는 본 발명에 있어서 접착력약화수단(7)과 부분분리수단(8)을 공용하는 고압기체와 공지의 진공흡착구(4)를 사용하여 웨이퍼접착테이프(3)에 접착된 반도체칩(2)을 픽업하는 과정을 보인 다른 실시예로써,7A to 7B show a semiconductor chip bonded to the wafer adhesive tape 3 by using a high pressure gas for sharing the adhesion weakening means 7 and the partial separating means 8 and a known vacuum suction port 4 according to the present invention. As another embodiment showing the process of picking up (2),
동 분리공정은, 크게 자재세팅공정과, 고압기체를 사용하여 웨이퍼접착테이프(3)에 접착되어 있는 픽업할 반도체칩(2)의 접착력을 약화시킴과 동시에 웨이퍼접착테이프(3)로부터 픽업할 반도체칩(2)의 부분분리가 진행되도록 하기 위한 반도체칩부분분리공정과, 부분분리된 상태의 픽업할 반도체칩(2)을 공지의 진공흡착구(4)를 사용하여 완전 분리해 내는 반도체칩흡착분리공정으로 이루어진다.This separation step significantly reduces the adhesive force of the semiconductor chip 2 to be picked up and bonded to the wafer adhesive tape 3 using a high-pressure gas, and at the same time, the semiconductor to be picked up from the wafer adhesive tape 3. A semiconductor chip partial separation process for partial separation of the chip 2 and a semiconductor chip adsorption for completely separating the semiconductor chip 2 to be picked up in a separated state using a known vacuum suction port 4. It is a separation process.
<자재세팅공정><Material setting process>
소잉작업이 완료된 자재(소잉된 다수의 반도체칩(2)들이 웨이퍼접착테이프(3) 윗면에 접착된 상태)를 반도체칩(2)의 분리작업이 용이하도록 이젝션장치와 진공흡착구(4)의 사이에 세팅한다.In order to facilitate the separation of the semiconductor chip 2, the material (the state in which the sawed semiconductor chips 2 are bonded to the upper surface of the wafer adhesive tape 3) of the sawing operation is completed. Set in between.
<반도체칩부분분리공정><Semiconductor Chip Part Separation Process>
고압기체를 이용하여 반도체칩을 부분분리하는 방법에는 접착력약화수단(7)과 부분분리수단(8)을 공용하는 고압냉각기체를 이용하는 방법과, 부부분리수단(8)만을 구비한 고압비냉각기체를 이용하는 방법이 있다.The method of partially separating the semiconductor chip by using a high pressure gas includes a method using a high pressure cooling gas that shares the weakening means 7 and the partial separating means 8, and a high pressure uncooled gas having only the couple separating means 8. There is a way to use.
고압냉각기체를 이용하여 반도체칩을 부분분리하는 방법Separation of semiconductor chips using high pressure cooling gas
도 7a의 도시와 같이, 픽업할 낱개의 반도체칩(2)이 접착된 부위에 고압냉각기체를 분사시켜 냉각기체에 의한 픽업할 반도체칩(2)의 접착력이 약화되도록 함과 동시에 고압에 의하여 픽업할 반도체칩(2)의 부분분리가 진행되도록 한다.As shown in FIG. 7A, the high-pressure cooling gas is sprayed onto a portion where the semiconductor chips 2 to be picked up are adhered to each other so that the adhesive force of the semiconductor chips 2 to be picked up by the cooling gas is weakened and picked up by high pressure. Partial separation of the semiconductor chip 2 is performed.
고압비냉각기체를 이용하여 반도체칩을 부분분리하는 방법Separation of semiconductor chips using high pressure uncooled gas
도 7b의 예시와 같이, 픽업할 낱개의 반도체칩(2)이 접착된 부위에 고압비냉각기체를 분사시켜 고압에 의하여 픽업할 반도체칩(2)의 부분분리가 진행되도록 한다.As illustrated in FIG. 7B, a high-pressure uncooled gas is sprayed onto a portion to which the individual semiconductor chips 2 to be picked up are adhered to allow partial separation of the semiconductor chips 2 to be picked up by high pressure.
<반도체칩흡착분리공정><Semiconductor chip adsorption separation process>
고압기체에 의하여 웨이퍼접착테이프(3)로부터 픽업할 반도체칩(2)의 부분분리가 진행된 상태에서 공지의 진공흡착구(4)를 사용하여 부분분리된 픽업할 낱개의 반도체칩(2)을 흡착하여 웨이퍼접착테이프(3)로부터 하나 하나의 반도체칩(2)을 떼어 내는 작업을 수행한다. 따라서 큰 접착저항 없이 웨이퍼접착테이프(3)로부터 반도체칩(2)은 실패없이 아주 쉽게 분리해 낼 수 있는 것이다.In the state where the partial separation of the semiconductor chip 2 to be picked up from the wafer adhesive tape 3 by the high-pressure gas is in progress, adsorption of the semiconductor chips 2 to be picked up by using a well-known vacuum suction port 4 is performed. Thus, the operation of removing one semiconductor chip 2 from the wafer adhesive tape 3 is performed. Therefore, the semiconductor chip 2 can be easily separated from the wafer adhesive tape 3 without a large adhesive resistance without failure.
(실시예 4)(Example 4)
도 8a는 본 발명에 있어서 픽업할 낱개의 반도체칩(2)이 접착된 부위에 고압기체(고압냉각기체 또는 고압비냉각기체)를 분사함과 동시에 칩고정수단(9)을 통해 인접하는 반도체칩(2)을 흡착고정한 상태에서 공지의 진공흡착구(4)를 이용해 반도체칩(2)을 픽업하는 과정을 보인 다른 실시예로써,FIG. 8A shows a semiconductor chip adjacent to the chip fixing means 9 while injecting a high-pressure gas (high-pressure cooling gas or a high-pressure non-cooling gas) to a portion to which the individual semiconductor chips 2 to be picked up are bonded. In another embodiment showing the process of picking up the semiconductor chip 2 using the well-known vacuum suction port 4 in the state that (2) is fixed to the adsorption,
동 분리공정은, 크게 자재세팅공정과, 픽업할 반도체칩(2)에 인접하는 주위의 반도체칩(2′)이 움직이지 못하도록 칩고정수단(9)을 통하여 흡착고정함과 동시에 고압기체를 사용하여 웨이퍼접착테이프(3)에 접착되어 있는 픽업할 반도체칩(2)의 부분분리가 이루어지도록 하는 반도체칩부분분리공정과, 부분분리된 상태의 픽업할 반도체칩(2)을 공지의 진공흡착구(4)를 사용하여 완전 분리해 내는 반도체칩흡착분리공정으로 이루어진다.In the separation step, a high-pressure gas is used at the same time as the material setting step and the adsorption fixation means through the chip fixing means 9 to prevent the semiconductor chip 2 ′ adjacent to the semiconductor chip 2 to be picked up from moving. And a semiconductor chip partial separation step of performing partial separation of the semiconductor chip 2 to be picked up, which is adhered to the wafer adhesive tape 3, and a semiconductor chip 2 to be picked up in a separated state. It consists of a semiconductor chip adsorption separation process that is separated completely using (4).
<자재세팅공정><Material setting process>
소잉작업이 완료된 자재(소잉된 다수의 반도체칩(2)들이 웨이퍼접착테이프(3) 윗면에 접착된 상태)를 반도체칩(2)의 분리작업이 용이하도록 이젝션장치와 진공흡착구(4)의 사이에 세팅한다.In order to facilitate the separation of the semiconductor chip 2, the material (the state in which the sawed semiconductor chips 2 are bonded to the upper surface of the wafer adhesive tape 3) of the sawing operation is completed. Set in between.
<반도체칩부분분리공정><Semiconductor Chip Part Separation Process>
픽업할 반도체칩(2)에 인접해 있는 주위의 반도체칩(2′)이 움직이지 못하도록 칩고정수단(9)으로서의 진공흡착구(30)를 가동시켜 주위의 반도체칩(2′)을 흡착고정한다. 그리고 동시에 고압기체를 사용하여 웨이퍼접착테이프(3)에 접착되어 있는 픽업할 반도체칩(2)을 강하게 밀어 올려 웨이퍼접착테이프(3)에서 픽업할 반도체칩(2)의 부분분리가 이루어지도록 한다. 이때 사용되는 상기 진공흡착구(30)의 형태는 도 8a, 8b의 예시와 같이 픽업할 반도체칩(2)의 크기보다 직경이 큰 원형 또는 사각형태의 것이면 좋으며, 그 형태는 여러 가지가 있을 수 있을 것이다.The vacuum suction port 30 serving as the chip fixing means 9 is operated so that the peripheral semiconductor chip 2 'adjacent to the semiconductor chip 2 to be picked up is moved so as to attract and fix the surrounding semiconductor chip 2'. do. At the same time, the semiconductor chip 2 to be picked up strongly attached to the wafer adhesive tape 3 is strongly pushed up using a high-pressure gas so that partial separation of the semiconductor chip 2 to be picked up from the wafer adhesive tape 3 is performed. At this time, the shape of the vacuum suction port 30 to be used may have a circular or rectangular shape having a diameter larger than the size of the semiconductor chip 2 to be picked up as shown in FIGS. 8A and 8B, and may have various shapes. There will be.
<반도체칩흡착분리공정><Semiconductor chip adsorption separation process>
고압기체에 의하여 웨이퍼접착테이프(3)로부터 픽업할 반도체칩(2)의 부분분리가 진행된 상태에서 공지의 진공흡착구(4)를 사용하여 부분분리된 픽업할 낱개의 반도체칩(2)을 흡착하여 웨이퍼접착테이프(3)로부터 하나 하나의 반도체칩(2)을 떼어 내는 작업을 수행한다. 따라서 큰 접착저항 없이 웨이퍼접착테이프(3)로부터 반도체칩(2)은 실패없이 아주 쉽게 분리해 낼 수 있는 것이다.In the state where the partial separation of the semiconductor chip 2 to be picked up from the wafer adhesive tape 3 by the high-pressure gas is in progress, adsorption of the semiconductor chips 2 to be picked up by using a well-known vacuum suction port 4 is performed. Thus, the operation of removing one semiconductor chip 2 from the wafer adhesive tape 3 is performed. Therefore, the semiconductor chip 2 can be easily separated from the wafer adhesive tape 3 without a large adhesive resistance without failure.
한편, 본 발명에는 상기한 바와 같이 반도체칩(2)에 직접적인 충격이 가해지지 않도록 하면서 반도체칩(2)과 웨이퍼접착테이프(3) 간의 접착력약화를 가능케 하고, 또한 최소한의 힘으로 반도체칩(2)의 부분분리가 이루어지도록 하는 분리보조수단으로서의 이젝션장치를 구비하게 되는데, 이 이젝션장치는 진공흡착구(4)가 무리없이 픽업할 반도체칩(2)을 안전하게 분리할 수 있도록 도와 주는 역할을 수행한다.On the other hand, the present invention enables the weakening of the adhesive force between the semiconductor chip 2 and the wafer adhesive tape 3 while avoiding a direct impact on the semiconductor chip 2 as described above, and also allows the semiconductor chip 2 with minimal force. And an ejection device as a separate assisting means for partial separation of the device, which serves to help the vacuum suction port 4 to safely separate the semiconductor chip 2 to be picked up without difficulty. do.
상기 이젝션장치는 반도체칩(2)과 웨이퍼접착테이프(3) 간의 접착력을 약화시켜 주는 접착력약화수단(7)과, 웨이퍼접착테이프(3)로부터 반도체칩(2)의 부분분리가 진행되도록 하는 부분분리수단(8)과, 픽업할 반도체칩(2)에 인접하는 타 반도체칩(2′)의 움직임을 막기 위한 칩고정수단(9)과, 웨이퍼접착테이프(3)에 고압기체를 분사하는 기체분사장치(10)를 필요적으로 선택하여 구성된다.The ejection apparatus includes an adhesive force weakening means (7) for weakening the adhesive force between the semiconductor chip (2) and the wafer adhesive tape (3), and a portion for allowing partial separation of the semiconductor chip (2) from the wafer adhesive tape (3). Gas for injecting a high pressure gas into the separation means 8, the chip holding means 9 for preventing the movement of the other semiconductor chip 2 'adjacent to the semiconductor chip 2 to be picked up, and the wafer adhesive tape 3; It is comprised by selecting the injection apparatus 10 as needed.
즉, 상기 이젝션장치는;That is, the ejection apparatus;
도 5a의 예시와 같이, 다수의 반도체칩(2)들이 접착된 웨이퍼접착테이프(3)의 밑면 전체를 골고루 냉각하도록 웨이퍼접착테이프(3)로부터 멀리 이격 설치되며, 냉각기체를 분사하여 반도체칩(2)의 접착력을 크게 약화시켜 주는 접착력약화수단(7)만을 구비하는 경우와,As illustrated in FIG. 5A, a plurality of semiconductor chips 2 are spaced apart from the wafer adhesive tape 3 so as to evenly cool the entire bottom surface of the wafer adhesive tape 3 to which the semiconductor chips 2 are bonded. 2) is provided with only the adhesive force weakening means (7) that greatly weakens the adhesive force of 2),
도 5b의 예시와 같이, 다수의 반도체칩(2)들이 접착된 웨이퍼접착테이프(3)의 밑면 중 일정영역(Z)만을 냉각하도록 웨이퍼접착테이프(3)로부터 근접 설치되며, 냉각기체를 분사하여 반도체칩(2)의 접착력을 크게 약화시켜 주는 접착력약화수단(7)만을 구비하는 경우와,As illustrated in FIG. 5B, a plurality of semiconductor chips 2 are installed in close proximity from the wafer adhesive tape 3 to cool only a predetermined area Z of the bottom surface of the wafer adhesive tape 3 to which the plurality of semiconductor chips 2 are bonded. In the case of including only the adhesive force weakening means (7) that greatly weakens the adhesive force of the semiconductor chip (2),
도 5c의 예시와 같이, 다수의 반도체칩(2)들이 접착된 웨이퍼접착테이프(3)의 밑면중 픽업할 반도체칩(2)이 접착된 한정된 부위만을 냉각하도록 웨이퍼접착테이프(3)에 거의 밀착 설치되는 접착력약화수단(7)만을 구비하여 구성할 수가 있다.As illustrated in FIG. 5C, the bottom surface of the wafer adhesive tape 3 to which the plurality of semiconductor chips 2 are bonded is almost in close contact with the wafer adhesive tape 3 so as to cool only a limited portion to which the semiconductor chip 2 to be picked up is bonded. Only the adhesive force weakening means 7 provided can be provided.
상기한 도 5a ∼ 5c 적용의 이젝션장치를 구성하는 접착력약화수단(7)은 냉각기체를 사용하게 되는데, 기체의 압력은 요구되지 않으며 기체의 종류는 공기(에어) 및 가스를 사용할 수 있으나 여기서 바람직하기는 인체 및 환경에 무해한 가스(헬륨, 질소 등)를 사용하는 것이 좋다.The adhesive weakening means 7 constituting the ejection apparatus of FIGS. 5A to 5C described above uses a cooling gas, and the pressure of the gas is not required, and the type of gas may be air (air) or gas. In the following, it is preferable to use a gas (helium, nitrogen, etc.) that is harmless to humans and the environment.
또한 상기 이젝션장치는;In addition, the ejection device;
도 6a의 예시와 같이, 다수의 반도체칩(2)들이 접착된 웨이퍼접착테이프(3)의 밑면 전체를 골고루 냉각하도록 웨이퍼접착테이프(3)로부터 멀리 이격 설치되며 냉각기체를 분사하여 반도체칩(2)의 접착력을 약화시켜 주는 접착력약화수단(7)을 구비함과 동시에 픽업할 반도체칩(2)의 부분분리를 진행시켜 주는 부분분리수단(8)을 더 구비하는 경우와,As illustrated in FIG. 6A, a plurality of semiconductor chips 2 are spaced apart from the wafer adhesive tape 3 so as to evenly cool the entire bottom surface of the wafer adhesive tape 3 to which the semiconductor chips 2 are bonded. And a partial separating means 8 for advancing partial separation of the semiconductor chip 2 to be picked up at the same time as the adhesive force weakening means 7 for weakening the adhesive force of
도 6b의 예시와 같이, 다수의 반도체칩(2)들이 접착된 웨이퍼접착테이프(3)의 밑면 중 일정영역(Z)만을 냉각하도록 웨이퍼접착테이프(3)로부터 근접 설치되며 냉각기체를 분사하여 반도체칩(2)의 접착력을 약화시켜 주는 접착력약화수단(7)을 구비함과 동시에 픽업할 반도체칩(2)의 부분분리를 진행시켜 주는 부분분리수단(8)을 더 구비하는 경우와,As illustrated in FIG. 6B, the semiconductor is sprayed by a cooling gas and is installed close to the wafer adhesion tape 3 to cool only a predetermined area Z of the bottom surface of the wafer adhesion tape 3 to which the plurality of semiconductor chips 2 are bonded. In addition to the case of having a weakening means (7) for weakening the adhesive force of the chip (2) and at the same time having a partial separating means (8) for advancing partial separation of the semiconductor chip 2 to be picked up,
도 6c의 예시와 같이, 다수의 반도체칩(2)들이 접착된 웨이퍼접착테이프(3)의 밑면 중 픽업할 반도체칩(2)이 접착된 한정된 부위만을 냉각하도록 웨이퍼접착테이프(3)에 거의 밀착 설치되는 접착력약화수단(7)을 구비함과 동시에 픽업할 반도체칩(2)의 부분분리를 진행시켜 주는 부분분리수단(8)을 더 구비하여 구성할 수가 있다.As illustrated in FIG. 6C, the bottom surface of the wafer adhesive tape 3 to which the plurality of semiconductor chips 2 are bonded is almost in close contact with the wafer adhesive tape 3 to cool only a limited portion to which the semiconductor chip 2 to be picked up is bonded. In addition to the adhesion weakening means (7) provided, it is possible to further comprise a partial separating means (8) for advancing partial separation of the semiconductor chip (2) to be picked up.
도 6a ∼ 6c에서 예시된 바의 부분분리수단(8)은, 수개의 니들핀으로 구성될 수 있는데, 이때 니들핀의 끝단은 가능한 한 무디게 구성(호형상)하여 픽업할 반도체칩(2)을 밀어 올리는 과정에서 반도체칩(2)의 밑면에 충격이나 자국(흠집)이 생기지 않도록 매우 미약한 힘으로, 즉 픽업할 반도체칩(2)의 약화된 접착력을 부분분리할 수 있는 정도의 세기로 반도체칩(2)의 밑부분을 밀어 올리면 족하다 할 것이다.The partial separating means 8 as illustrated in FIGS. 6A to 6C may be composed of several needle pins, wherein the ends of the needle pins are configured as dull as possible (arc shapes) to pick up the semiconductor chip 2 to be picked up. In the pushing up process, the semiconductor chip 2 has a very weak force so that the bottom surface of the semiconductor chip 2 is not impacted or scratched, i.e., the strength of the semiconductor chip 2 to be picked up can be partially separated. Push the bottom of the chip (2) will be enough.
또한 상기 이젝션장치는;In addition, the ejection device;
도 7a의 예시와 같이, 접착력약화수단(7)과 부분분리수단(8)을 공유하는 고압냉각기체를 분사하는 기체분사장치(10)만으로 구성할 수 있으며,As shown in Figure 7a, it can be composed of only the gas injection device 10 for injecting a high pressure cooling gas sharing the adhesion weakening means 7 and the partial separation means (8),
도 7b의 예시와 같이, 부분분리수단(8)만을 갖는 고압비냉각기체를 분사하는 기체분사장치(10)만으로 구성할 수도 있다.As illustrated in FIG. 7B, the gas injection device 10 may be configured to inject a high-pressure uncooled gas having only the partial separating means 8.
상기 기체분사장치(10)에서 분사되는 고압기체(고압냉각기체 및 고압비냉각기체)의 압력은 반도체칩(2)을 접착하고 있는 웨이퍼접착테이프(3)의 접착력을 이길 수 있는 정도의 힘(기체압)을 가지면 충분하며, 이때 기체분사장치(10)의 압력은 기체를 분사(토출)하는 노즐구경을 조정함으로써 반도체칩(2)의 크기변화에 쉽게 적응할 수 있다.The pressure of the high pressure gas (high pressure cooling gas and the high pressure non-cooling gas) injected from the gas injector 10 is such that a force that can overcome the adhesive force of the wafer adhesive tape 3 adhering the semiconductor chip 2 ( Gas pressure), and the pressure of the gas injection device 10 can be easily adapted to the size change of the semiconductor chip 2 by adjusting the nozzle diameter for injecting (ejecting) gas.
또한 상기 이젝션장치는;In addition, the ejection device;
도 8a의 예시와 같이, 고압기체를 분사하여 픽업할 반도체칩(2)을 부분분리시켜 주기 위한 부분분리수단(8)이 설치된 기체분사장치(10)를 구비함과 동시에 상기 부분분리수단(8)의 주위에 픽업할 반도체칩(2)에 인접하는 반도체칩(2′)을 흡착고정시켜 주기 위한 칩고정수단(9)을 더 구비하여 구성할 수가 있다. 여기서 상기 칩고정수단(9)은 픽업할 반도체칩(2)에 인접하는 반도체칩(2′)의 하부에 밀착설치되어 기체분사장치(10)에서 픽업할 반도체칩(2)을 부분분리시키기 위하여 고압기체를 분사할 때, 반도체칩(2)에 인접하는 타 반도체칩(2′)의 움직임을 막기 위하여 반대로(고압기체를 토출시켜 반도체칩(2)을 부분분리시키는 동작과 반대) 반도체칩(2′)을 흡착하여 고정시키는 역할을 수행한다.As shown in FIG. 8A, a gas ejection apparatus 10 provided with a partial separation means 8 for partially separating the semiconductor chip 2 to be picked up by injecting a high-pressure gas is provided, and at the same time, the partial separation means 8 Can be further provided with chip fixing means 9 for adsorbing and fixing the semiconductor chip 2 'adjacent to the semiconductor chip 2 to be picked up. Here, the chip fixing means 9 is installed in close contact with the lower portion of the semiconductor chip 2 'adjacent to the semiconductor chip 2 to be picked up so as to partially separate the semiconductor chip 2 to be picked up by the gas injector 10. When spraying the high-pressure gas, the semiconductor chip (opposite to the operation of discharging the high-pressure gas to partially separate the semiconductor chip 2) in order to prevent the movement of another semiconductor chip 2 'adjacent to the semiconductor chip 2) 2 ') is adsorbed and fixed.
이와 같이, 본 발명에 의하면 소잉된 반도체칩(2)이 붙어 있는 웨이퍼접착테이프(3)의 밑면을 접착력약화수단(7)으로 냉각시키거나, 접착력약화수단(7)으로 냉각시킴과 동시에 부분분리수단(8)으로 픽업할 반도체칩(2)을 부분분리하거나 또는 고압기체를 사용하여 픽업할 반도체칩(2)을 부분분리시켜 주는 방법을 채용함으로써 반도체칩(2)에 직접적인 충격을 주지 않고 최소한의 힘을 가하여 웨이퍼접착테이프에 접착된 반도체칩(2)을 안전하게 흡착분리해 낼 수 있어 반도체칩(2)의 손상을 예방하게 되므로 궁극적으로 반도체패키지의 신뢰성을 제고시킬 수 있는 것이다.As described above, according to the present invention, the bottom surface of the wafer adhesive tape 3 on which the sawed semiconductor chip 2 is attached is cooled by the adhesion weakening means 7 or by the adhesion weakening means 7 and at the same time separated. By means of partially separating the semiconductor chip 2 to be picked up by the means 8 or partially separating the semiconductor chip 2 to be picked up using a high-pressure gas, the semiconductor chip 2 can be applied at least without a direct impact. Since the semiconductor chip 2 adhered to the wafer adhesive tape can be safely adsorbed and separated to prevent the damage of the semiconductor chip 2, ultimately, the reliability of the semiconductor package can be improved.
이상에서 설명한 것은 본 발명에 의한 반도체칩의 픽업방법 및 그 장치를 설명하기 위한 하나의 실시예에 불과한 것이며, 본 발명은 상기한 실시예에 한정하지 않고 이하의 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능할 것이다.What has been described above is only one embodiment for explaining a method and a device for picking up a semiconductor chip according to the present invention, and the present invention is not limited to the above-described embodiment but the gist of the present invention as claimed in the following claims. Various changes can be made by those skilled in the art without departing from the scope of the present invention.
Claims (26)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-1998-0046847A KR100378094B1 (en) | 1998-11-02 | 1998-11-02 | Method and apparatus for manufacturing a semiconductor package |
| JP11002632A JP2000138277A (en) | 1998-11-02 | 1999-01-08 | Method and system for picking up semiconductor chip unit from wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR10-1998-0046847A KR100378094B1 (en) | 1998-11-02 | 1998-11-02 | Method and apparatus for manufacturing a semiconductor package |
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| KR20000031043A true KR20000031043A (en) | 2000-06-05 |
| KR100378094B1 KR100378094B1 (en) | 2003-06-02 |
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| KR10-1998-0046847A KR100378094B1 (en) | 1998-11-02 | 1998-11-02 | Method and apparatus for manufacturing a semiconductor package |
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| KR (1) | KR100378094B1 (en) |
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| US6869264B2 (en) | 2002-11-11 | 2005-03-22 | Samsung Electronics Co., Ltd | Method and apparatus for picking up a semiconductor chip, method and apparatus for removing a semiconductor chip from a dicing tape, and a method of forming a perforated dicing tape |
| KR101515752B1 (en) * | 2014-03-19 | 2015-04-28 | 세메스 주식회사 | Apparatus for picking up a die |
| US11239104B2 (en) | 2019-03-12 | 2022-02-01 | Samsung Electronics Co., Ltd. | Chip ejecting apparatus |
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| JP2006049591A (en) * | 2004-08-05 | 2006-02-16 | Disco Abrasive Syst Ltd | Fracture method and fracture equipment of adhesive film stuck on wafer |
| KR101190442B1 (en) * | 2012-02-15 | 2012-10-11 | 세크론 주식회사 | Method of ejecting a die from a wafer, die ejecting unit and method of picking up a die and apparatus of picking up a die |
| KR101397750B1 (en) * | 2012-07-25 | 2014-05-21 | 삼성전기주식회사 | Chip ejector and chip removal method using the same |
| JP7154686B2 (en) * | 2018-06-06 | 2022-10-18 | 株式会社ディスコ | Wafer processing method |
| JP2019212813A (en) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | Wafer processing method |
| JP2019212815A (en) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | Wafer processing method |
| JP2019212817A (en) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | Wafer processing method |
| JP2019212814A (en) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | Wafer processing method |
| JP2019212818A (en) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | Wafer processing method |
| JP2019212784A (en) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | Wafer processing method |
| JP2019212783A (en) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | Wafer processing method |
| JP2019212816A (en) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | Wafer processing method |
| JP2020024994A (en) * | 2018-08-06 | 2020-02-13 | 株式会社ディスコ | Wafer processing method |
| JP2020024993A (en) * | 2018-08-06 | 2020-02-13 | 株式会社ディスコ | Wafer processing method |
| JP2020024992A (en) * | 2018-08-06 | 2020-02-13 | 株式会社ディスコ | Wafer processing method |
| JP7166720B2 (en) * | 2018-10-17 | 2022-11-08 | 株式会社ディスコ | Wafer processing method |
| JP7166718B2 (en) * | 2018-10-17 | 2022-11-08 | 株式会社ディスコ | Wafer processing method |
| JP7166719B2 (en) * | 2018-10-17 | 2022-11-08 | 株式会社ディスコ | Wafer processing method |
| JP7503886B2 (en) | 2018-11-06 | 2024-06-21 | 株式会社ディスコ | Wafer Processing Method |
| JP7224719B2 (en) * | 2019-01-17 | 2023-02-20 | 株式会社ディスコ | Wafer processing method |
| JP2020174100A (en) * | 2019-04-10 | 2020-10-22 | 株式会社ディスコ | Wafer processing method |
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| JPS5587454A (en) * | 1978-12-26 | 1980-07-02 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
| JPS61140145A (en) * | 1984-12-12 | 1986-06-27 | Akita Denshi Kk | Pick-up apparatus |
| KR930003146B1 (en) * | 1990-03-19 | 1993-04-22 | 삼성항공산업 주식회사 | Ejecting method of semiconductor chip |
| JPH0637169A (en) * | 1992-07-16 | 1994-02-10 | Hitachi Ltd | Pellet pushing-up mechanism for semiconductor manufacture device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6869264B2 (en) | 2002-11-11 | 2005-03-22 | Samsung Electronics Co., Ltd | Method and apparatus for picking up a semiconductor chip, method and apparatus for removing a semiconductor chip from a dicing tape, and a method of forming a perforated dicing tape |
| KR100480628B1 (en) * | 2002-11-11 | 2005-03-31 | 삼성전자주식회사 | Chip pick-up method and device for manufacturing semiconductor device using air blowing |
| US7284941B2 (en) | 2002-11-11 | 2007-10-23 | Samsung Electronics Co., Ltd. | Method and apparatus for picking up a semiconductor chip, method and apparatus for removing a semiconductor chip from a dicing tape, and a method of forming a perforated dicing tape |
| US7465142B2 (en) | 2002-11-11 | 2008-12-16 | Samsung Electronics Co., Ltd. | Method and apparatus for picking up a semiconductor chip, method and apparatus for removing a semiconductor chip from a dicing tape, and a method of forming a perforated dicing tape |
| KR101515752B1 (en) * | 2014-03-19 | 2015-04-28 | 세메스 주식회사 | Apparatus for picking up a die |
| US11239104B2 (en) | 2019-03-12 | 2022-02-01 | Samsung Electronics Co., Ltd. | Chip ejecting apparatus |
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| Publication number | Publication date |
|---|---|
| KR100378094B1 (en) | 2003-06-02 |
| JP2000138277A (en) | 2000-05-16 |
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