KR20000001008A - Plastic package mold device having built-in semiconductor chip and its molding method - Google Patents
Plastic package mold device having built-in semiconductor chip and its molding method Download PDFInfo
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- KR20000001008A KR20000001008A KR1019980021024A KR19980021024A KR20000001008A KR 20000001008 A KR20000001008 A KR 20000001008A KR 1019980021024 A KR1019980021024 A KR 1019980021024A KR 19980021024 A KR19980021024 A KR 19980021024A KR 20000001008 A KR20000001008 A KR 20000001008A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
본 발명은 반도체칩을 내장한 플라스틱 패키지 몰딩 장치에 관한 것으로서, 보다 상세하게는 상부금형과 하부금형 사이에 몰딩된 플라스틱 패키지를 냉각으로 접착력을 약화시킨 후 리프트하여 크랙 발생을 방지한 반도체 칩을 내장한 플라스틱 패키지 몰딩 장치와 그 몰딩 방법에 관한 것이다.The present invention relates to a plastic package molding apparatus incorporating a semiconductor chip, and more particularly, to a semiconductor package in which a plastic package molded between an upper mold and a lower mold is weakened by cooling and then lifted to prevent cracking. A plastic package molding apparatus and a molding method thereof.
통상, 반도체칩을 내장하는 플라스틱 패키지는 다양한 형태로 개발되고 있으며, 특히 플라스틱 패키지는 그 두께를 최소화하여 패키지를 경량화하기 위하여 TOSP나 TQFP와 같은 박막 형태로 개발되었고, 또한 실장밀도를 증대시키기 위하여 큰 사이즈의 칩에 대한 점유율 증가의 대응으로 리드 온 칩(Lead on chip) 구조가 채택되었다.In general, plastic packages containing semiconductor chips have been developed in various forms, and in particular, plastic packages have been developed in a thin film form such as TOSP or TQFP in order to minimize the thickness of the package and to increase the mounting density. In response to an increase in the market share for chips of size, a lead on chip structure is adopted.
그러나, 박막 패키지는 반도체 조립 공정의 적용에 여러 가지 문제점이 있으며, 특히 두께가 얇아서 몰드 공정에서 메커니컬한 손상에 대응하는 대응력이 약하다. 더욱이 소형 패키지를 위하여 채용한 리드 온 칩 구조는 칩 크랙에 더욱 취약한 특성을 가지며, 이 경우 대형 칩을 탑재하였기 때문에 패키지 크랙에 대비하여 접착력이 뛰어난 LME(Low Molecula Epoxy) 컴파운드가 이용되기 때문에 몰드 금형과 접착에 의한 칩 크랙이 발생된다.However, the thin film package has various problems in the application of the semiconductor assembly process, and in particular, the thickness thereof is weak so that the corresponding force corresponding to mechanical damage in the mold process is weak. Furthermore, the lead-on chip structure adopted for the small package is more vulnerable to chip crack, and in this case, since the large chip is mounted, the low molecula epoxy compound (LME), which has excellent adhesion against the package crack, is used to mold the mold. Chip cracking is caused by adhesion.
또한 패키지의 저면에 접하는 하부금형에 설치된 이젝트핀(Eject Pin)은 컴파운드의 접착 현상이 발생되는 시점과 동일한 시점에 리프트된다. 그러므로, 패키지가 순간적으로 휘어지고, 내장된 반도체칩은 패키지의 휨에 저항하지만 저항력이 패키지의 휘는 힘보다 약하면 반도체칩에는 크랙이 발생된다.In addition, the eject pin (Eject Pin) installed in the lower mold in contact with the bottom of the package is lifted at the same time when the compound adhesion phenomenon occurs. Therefore, the package is bent instantaneously, and the embedded semiconductor chip resists warpage of the package, but if the resistance is weaker than that of the package, cracks occur in the semiconductor chip.
종래의 몰딩 기술을 참조하면, 일반적으로 와이어 본딩 공정이 완료된 리드 프레임은 상, 하로 일치되게 배치된 몰드 금형 사이로 이송된 후 하부금형 상에 놓인다. 동시에 주입할 컴파운드는 하부금형의 플런저(Plunger) 위에 놓이며, 그 후 상부와 하부금형이 맞물린다.Referring to the conventional molding technology, generally, the lead frame in which the wire bonding process is completed is transferred between mold molds arranged up and down, and then placed on the lower mold. The compound to be injected at the same time is placed on the lower mold plunger, and the upper and lower molds are then engaged.
그리고, 플런저가 주어진 속도로 금형 내부로 주입되며, 이때 상부와 하부금형은 고온 상태이기 때문에 고체의 컴파운드는 액화되어 반도체칩이 배치된 캐비티(Cavity) 내부로 주입된다.Then, the plunger is injected into the mold at a given speed, and since the upper and lower molds are in a high temperature state, the solid compound is liquefied and injected into the cavity in which the semiconductor chip is disposed.
플런저의 이송이 완료되면 캐비티 안은 컴파운드로 충진되고, 소정 시간동안 컴파운드가 큐어(Cure)되면 단단하게 플라스틱 패키지가 고화된다.When the transfer of the plunger is completed, the inside of the cavity is filled with the compound, and when the compound is cured for a predetermined time, the plastic package is solidified.
그 후, 맞물린 상부와 하부금형이 이격되고, 하부금형의 이젝트핀이 상승되면서 플라스틱 패키지를 리프트한다.Thereafter, the engaged upper and lower molds are spaced apart and the eject pins of the lower molds are raised to lift the plastic package.
이때 전술한 컴파운드와 금형간의 접착으로 인한 크랙이 발생된다.At this time, a crack is generated due to the adhesion between the compound and the mold.
따라서, 종래의 플라스틱 패키지 몰드 장치로 플라스틱 패키지를 제조함에 있어서, 플라스틱 패키지의 컴파운드 또는 반도체칩의 크랙으로 인한 심각한 손상이 발생되어 수율이 저하되는 문제점이 있다.Therefore, in manufacturing a plastic package with a conventional plastic package mold apparatus, there is a problem that a serious damage due to the compound of the plastic package or the crack of the semiconductor chip is generated, the yield is reduced.
본 발명의 목적은 몰딩된 플라스틱 패키지를 이루는 컴파운드와 하부금형 간의 접착력을 제거하여 이젝트핀에 의한 플라스틱 패키지 리프트시 발생되는 크랙과 같은 손상을 방지함에 있다.An object of the present invention is to remove the adhesive force between the compound and the lower mold forming the molded plastic package to prevent damage such as cracks generated when the plastic package lift by the eject pin.
본 발명의 또다른 목적들은 다음의 상세한 설명과 첨부된 도면으로부터 보다 명확해질 것이다.Other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.
도 1은 본 발명에 따른 반도체칩을 내장한 플라스틱 패키지 몰드 장치의 바람직한 실시예를 나타내는 단면도이다.1 is a cross-sectional view showing a preferred embodiment of a plastic package mold apparatus incorporating a semiconductor chip according to the present invention.
도 2는 실시예에 의하여 플라스틱 패키지가 몰딩된 후 냉각시키는 상태를 나타내는 단면도이다.2 is a cross-sectional view illustrating a state in which a plastic package is molded and then cooled according to an embodiment.
도 3은 실시예에 의하여 플라스틱 패키지가 리프트되는 상태를 나타내는 단면도이다.3 is a cross-sectional view showing a state in which the plastic package is lifted according to the embodiment.
본 발명에 반도체칩을 내장한 플라스틱 패키지 몰딩 장치는 리드프레임이 놓이는 하부금형으로 공기를 유입시켜서 고화된 플라스틱 패키지를 냉각시켜서 열수축시키고, 열수축으로 하부금형과의 접착력이 제거된 플라스틱 패키지를 이젝트핀으로 리프트하도록 구성된다.The plastic package molding apparatus incorporating a semiconductor chip according to the present invention induces air into the lower mold on which the lead frame is placed, thereby cooling the solidified plastic package and thermally contracting it. Configured to lift.
즉, 반도체칩을 내장한 플라스틱 패키지 몰딩은 리드프레임의 이송후 컴파운드의 캐비티 내부로 주입으로 인한 몰딩을 수행하고, 큐어 단계를 거친 후 공기를 이용하여 플라스틱 패키지를 냉각하며, 그 후 이젝트핀으로 리프트하여 배출하는 과정으로 이루어진다.In other words, the plastic package molding in which the semiconductor chip is embedded performs molding by injection into the cavity of the compound after the transfer of the lead frame, cools the plastic package using air after the curing step, and then lifts it by the eject pin. By the process of discharge.
따라서, 플라스틱 패키지를 이루는 컴파운드와 하부금형과의 접착력이 열수축으로 인하여 자연스럽게 제거되어서 리프트시 크랙이 발생되지 않는다.Therefore, the adhesive force between the compound and the lower mold forming the plastic package is naturally removed due to heat shrinkage, so that no crack is generated during the lift.
이하, 본 발명에 따른 바람직한 실시예에 대하여 첨부 도면을 참조하여 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명에 따른 실시예는 도 1과 같이 플라스틱 패키지(10)를 몰딩하기 위하여 구성되는 상부금형(12)과 하부금형(14) 중 하부금형(14)에 설치되는 이젝트핀(16)을 통하여 공기를 유입시키는 구조를 갖는다.According to an embodiment of the present invention, as shown in FIG. 1, the air is ejected through the eject pin 16 installed in the lower mold 14 of the upper mold 12 and the lower mold 14 configured to mold the plastic package 10. It has a structure for introducing the.
즉, 이젝트핀(16)이 설치된 하부금형(14)의 관통공(18)에 냉각을 위한 공기를 유입시키기 위한 공간을 형성하고, 관통공(18)을 통하여 공기가 유입된다.That is, a space for introducing air for cooling into the through hole 18 of the lower mold 14 in which the eject pin 16 is installed, and air is introduced through the through hole 18.
본 발명에 따른 반도체칩을 내장한 플라스틱 패키지 몰딩 방법에 대하여 도 1 내지 도 3을 참조하여 순차적으로 설명한다.A plastic package molding method incorporating a semiconductor chip according to the present invention will be described sequentially with reference to FIGS. 1 to 3.
먼저, 종래와 동일하게 와이어 본딩된 리드프레임(20)이 상하로 일치되게 배치된 상부와 하부금형(12, 14) 사이에 이송되고, 그 후 상부와 하부금형(12, 14)이 맞물려서 도 1과 같은 상태가 된다.First, the wire-bonded leadframe 20 is transferred between the upper and lower molds 12 and 14 arranged to be aligned up and down in the same manner as in the related art, and then the upper and lower molds 12 and 14 are engaged with each other. Will be in the same state as
그리고, 컴파운드가 플런저(도시되지 않음)가 놓인 후 가열된 상부금형(12)에 의하여 액화되어 캐비티로 충진되며, 완전히 캐비티가 충진된 후 소정 시간 큐어 단계를 거쳐서 플라스틱 패키지가 고화된다.Then, the compound is liquefied by the heated upper mold 12 after the plunger (not shown) is placed and filled into the cavity, and after the cavity is completely filled, the plastic package is solidified through a predetermined time curing step.
그 후, 상부금형(12)과 하부금형(14)이 상하로 이격되면, 고화된 플라스틱 패키지(10)는 하부금형(14) 상에 도 2와 같이 남게된다.Thereafter, when the upper mold 12 and the lower mold 14 are spaced up and down, the solidified plastic package 10 remains on the lower mold 14 as shown in FIG. 2.
이때 하부금형(14)에 설치된 이젝트핀(16)이 삽입된 관통공(18)을 통하여 냉각용 공기가 유입되며, 공기는 유입되어서 높은 온도를 갖는 플라스틱 패키지(10)를 냉각시킨다.At this time, the cooling air is introduced through the through hole 18 into which the eject pin 16 installed in the lower mold 14 is inserted, and the air is introduced to cool the plastic package 10 having a high temperature.
플라스틱 패키지(10)는 냉각되면서 수축되고, 그에 따라서 자연스럽게 플라스틱 패키지(10)를 이루는 컴파운드와 하부금형(14)은 떨어진다.The plastic package 10 shrinks as it cools, so that the compound and lower mold 14 that naturally make up the plastic package 10 fall.
소정 시간 동안 공기가 유입되어 플라스틱 패키지(10)가 냉각되고, 그 후 도 3과 같이 이젝트핀(16)이 리프트되어 플라스틱 패키지(10)를 리프트한다. 이때 플라스틱 패키지(10)는 수축에 의하여 컴파운드와 하부금형(14)이 떨어진 상태이므로 휘어짐없이 리프트되며, 종래의 크랙 발생과 같은 문제점은 발생되지 않는다.Air is introduced for a predetermined time to cool the plastic package 10, and then, as shown in FIG. 3, the eject pin 16 is lifted to lift the plastic package 10. At this time, the plastic package 10 is lifted without bending because the compound and the lower mold 14 are separated by the contraction, and a problem such as a conventional crack does not occur.
필요에 따라서, 냉각된 플라스틱 패키지의 손상을 방지하기 위하여 후속되는 공정에 영향을 주지 않도록 플라스틱 패키지는 상온으로 가열되거나 후속 공정에서 온도 조절되어서 상온으로 유지됨이 바람직하다.If desired, the plastic package is preferably heated to room temperature or temperature controlled in a subsequent process to maintain room temperature so as not to affect subsequent processes to prevent damage to the cooled plastic package.
이상에서 상세히 설명한 바와 같이, 본 발명은 바람직한 실시예에 대해 상세히 기술되었지만, 본 발명이 속하는 기술 분야에 있어서 통상의 지식을 가진 사람이라면, 본 발명의 정신 및 범위를 벗어나지 않으면서 본 발명을 여러 가지로 변형 또는 변경하여 실시할 수 있음을 알 수 있을 것이다.As described in detail above, the present invention has been described in detail with respect to preferred embodiments, but those skilled in the art to which the present invention pertains, various embodiments of the present invention without departing from the spirit and scope of the present invention It will be appreciated that the present invention may be modified or modified as described above.
따라서, 본 발명에 의하면 리프트되는 과정에서 몰딩이 완료된 플라스틱 패키지에 크랙이 발생되어 손상되는 것이 방지되므로 수율이 극대화되는 효과가 있다.Therefore, according to the present invention, since the crack is prevented from being damaged due to the molding of the plastic package in which the molding is completed, the yield is maximized.
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Cited By (4)
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KR20010111766A (en) * | 2000-06-13 | 2001-12-20 | 마이클 디. 오브라이언 | Molding die for manufacturing semiconductor package |
KR101056822B1 (en) * | 2001-10-05 | 2011-08-12 | 어드밴스드 시스템즈 오토메이션 리미티드 | Semiconductor wafer molding apparatus and method |
US8582987B2 (en) * | 2009-07-06 | 2013-11-12 | Brother Kogyo Kabushiki Kaisha | Printing device |
KR20190036924A (en) * | 2017-09-28 | 2019-04-05 | 코오롱플라스틱 주식회사 | High Temperature Blow Asistied Fabrication Method For Fiber Reinforced Thermoplastic Composites and That Apparatus |
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1998
- 1998-06-08 KR KR1019980021024A patent/KR20000001008A/en not_active Application Discontinuation
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KR20010111766A (en) * | 2000-06-13 | 2001-12-20 | 마이클 디. 오브라이언 | Molding die for manufacturing semiconductor package |
KR101056822B1 (en) * | 2001-10-05 | 2011-08-12 | 어드밴스드 시스템즈 오토메이션 리미티드 | Semiconductor wafer molding apparatus and method |
US8582987B2 (en) * | 2009-07-06 | 2013-11-12 | Brother Kogyo Kabushiki Kaisha | Printing device |
KR20190036924A (en) * | 2017-09-28 | 2019-04-05 | 코오롱플라스틱 주식회사 | High Temperature Blow Asistied Fabrication Method For Fiber Reinforced Thermoplastic Composites and That Apparatus |
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