KR19990088041A - 얇은층을만드는캐소드스퍼터링장치용타겟 - Google Patents
얇은층을만드는캐소드스퍼터링장치용타겟 Download PDFInfo
- Publication number
- KR19990088041A KR19990088041A KR1019990015977A KR19990015977A KR19990088041A KR 19990088041 A KR19990088041 A KR 19990088041A KR 1019990015977 A KR1019990015977 A KR 1019990015977A KR 19990015977 A KR19990015977 A KR 19990015977A KR 19990088041 A KR19990088041 A KR 19990088041A
- Authority
- KR
- South Korea
- Prior art keywords
- target
- substrate
- grooves
- furrows
- targets
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 210000002381 plasma Anatomy 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (3)
- 진공 처리실에서 플라즈마를 이용하여 기판에 얇은 층을 만드는 캐소드 스퍼터링 장치의 타겟(2, 8)으로서, 평판 형태, 바람직하게는 원통 또는 평행 6면체의 형태를 취하며, 극성이 다른 소스들을 갖춘 자석 시스템이 기판 반대쪽의 타겟의 측면부에 배치되며, 이 소스들을 통해 아치형으로 만곡된 자력선들로부터 적어도 하나의 자체 완결된 터널이 형성되는 타겟에 있어서,기판을 향하는 타겟(2, 8)의 표면에 원형 링 형태를 띠는, 각각 또는 두 개의 반원부와 두 개의 직사각부로 이루어지는, 각각 타원형 무한 트랙을 이루는 홈 또는 고랑(4, 5, 6, 9, 10)이 여러 개 나 있으며, 여기서 각각 원형 링 형태 또는 타원형 경주 트랙 형태의 고랑들의 다수는 서로 동심적으로 배치되며, 이 고랑들 각각은 기판 평면(E)에 대하여 서로 같거나 다른 경사각(α, β)을 이루는 두 개의 평탄 경사면(4a, 4b; 5a, 5b, ...)을 갖는 것을 특징으로 하는 타겟.
- 제 1 항에 있어서, 기판을 향하는 타겟(2, 8)의 표면(3)에 마련된 고랑들(4, 5, 6, 9, 10)은 깊이(T)가 서로 다르고, 고랑을 만드는 경사면들(4a, 4b; 5a, 5b, ...)은 폭(B1, B2, ...)이 서로 다르게 나 있는 것을 특징으로 하는 타겟.
- 제 1 항 및 제 2 항에 있어서, 개별 고랑들(4, 5, 6; 9, 10)은 회전축선(5) 또는 초점(P1, P2) 내지 중심축선(H)에 대하여 서로 다른 간격으로 배치되며, 하지만 서로 평행한 두 고랑이 보이는 간격은 크기가 같은 것을 특징을 하는 타겟.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19819933.3 | 1998-05-05 | ||
DE19819933A DE19819933A1 (de) | 1998-05-05 | 1998-05-05 | Target für eine Kathodenzerstäubungsvorrichtung zur Herstellung dünner Schichten |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990088041A true KR19990088041A (ko) | 1999-12-27 |
KR100316227B1 KR100316227B1 (ko) | 2001-12-12 |
Family
ID=7866668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990015977A KR100316227B1 (ko) | 1998-05-05 | 1999-05-04 | 얇은 층을 만드는 캐소드 스퍼터링 장치용 타겟 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0955667B1 (ko) |
JP (1) | JPH11343567A (ko) |
KR (1) | KR100316227B1 (ko) |
DE (2) | DE19819933A1 (ko) |
ES (1) | ES2207053T3 (ko) |
TW (1) | TW483943B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120108981A (ko) * | 2011-01-26 | 2012-10-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타깃 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0850756A3 (en) * | 1996-12-25 | 1999-02-03 | Japan Polychem Corporation | Container and sheet of propylene polymer laminate |
US20050072668A1 (en) * | 2003-10-06 | 2005-04-07 | Heraeus, Inc. | Sputter target having modified surface texture |
CN102230158B (zh) * | 2004-11-17 | 2014-04-30 | Jx日矿日石金属株式会社 | 溅射靶、溅射靶-背衬板组装体以及成膜装置 |
CN101550536B (zh) * | 2008-03-31 | 2011-05-04 | 沈阳金纳新材料有限公司 | 一种用于磁控溅射的高纯镍靶材 |
TWI560295B (en) * | 2010-02-23 | 2016-12-01 | Evatec Ag | Target shaping |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2641558A1 (de) * | 1976-09-15 | 1978-03-16 | Siemens Ag | Verfahren zum aufbringen von elektrisch isolierenden schichten auf ein substrat durch hf-zerstaeubung (sputtern) |
US4100055A (en) * | 1977-06-10 | 1978-07-11 | Varian Associates, Inc. | Target profile for sputtering apparatus |
US4299678A (en) * | 1979-07-23 | 1981-11-10 | Spin Physics, Inc. | Magnetic target plate for use in magnetron sputtering of magnetic films |
JPS57149471A (en) * | 1981-03-07 | 1982-09-16 | Ulvac Corp | High-speed spattering device for ferromagnetic body |
CH649578A5 (de) * | 1981-03-27 | 1985-05-31 | Ulvac Corp | Hochgeschwindigkeits-kathoden-zerstaeubungsvorrichtung. |
DE3223245C2 (de) * | 1982-07-23 | 1986-05-22 | Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa | Ferromagnetische Hochgeschwindigkeits-Kathodenzerstäubungs-Vorrichtung |
DD216259B1 (de) * | 1983-06-30 | 1989-01-11 | Forschungsinstiut Manfred Von | Target zum hochratezerstaeuben ferromagnetischer materialien |
ATE47253T1 (de) * | 1983-12-05 | 1989-10-15 | Leybold Ag | Magnetronkatode zum zerstaeuben ferromagnetischer targets. |
KR900001825B1 (ko) * | 1984-11-14 | 1990-03-24 | 가부시끼가이샤 히다찌세이사꾸쇼 | 성막 지향성을 고려한 스퍼터링장치 |
US4610774A (en) * | 1984-11-14 | 1986-09-09 | Hitachi, Ltd. | Target for sputtering |
AU8629491A (en) * | 1990-08-30 | 1992-03-30 | Materials Research Corporation | Pretextured cathode sputtering target and method of preparation thereof and sputtering therewith |
DE4042286C1 (ko) * | 1990-12-31 | 1992-02-06 | Leybold Ag, 6450 Hanau, De | |
DE9310565U1 (de) * | 1993-07-15 | 1993-10-14 | Balzers Hochvakuum | Target für Kathodenzerstäubungsanlagen |
EP0676791B1 (de) * | 1994-04-07 | 1995-11-15 | Balzers Aktiengesellschaft | Magnetronzerstäubungsquelle und deren Verwendung |
DE29510381U1 (de) * | 1995-06-27 | 1995-09-07 | Leybold Ag | Vorrichtung zum Beschichten eines scheibenförmigen Substrats |
DE19614598A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
DE19614599A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
DE19614595A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
-
1998
- 1998-05-05 DE DE19819933A patent/DE19819933A1/de not_active Ceased
-
1999
- 1999-04-06 EP EP99106839A patent/EP0955667B1/de not_active Expired - Lifetime
- 1999-04-06 DE DE59906822T patent/DE59906822D1/de not_active Expired - Lifetime
- 1999-04-06 ES ES99106839T patent/ES2207053T3/es not_active Expired - Lifetime
- 1999-05-03 TW TW088107126A patent/TW483943B/zh active
- 1999-05-04 KR KR1019990015977A patent/KR100316227B1/ko not_active IP Right Cessation
- 1999-05-06 JP JP11126091A patent/JPH11343567A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120108981A (ko) * | 2011-01-26 | 2012-10-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타깃 |
Also Published As
Publication number | Publication date |
---|---|
KR100316227B1 (ko) | 2001-12-12 |
EP0955667A1 (de) | 1999-11-10 |
ES2207053T3 (es) | 2004-05-16 |
DE59906822D1 (de) | 2003-10-09 |
TW483943B (en) | 2002-04-21 |
DE19819933A1 (de) | 1999-11-11 |
JPH11343567A (ja) | 1999-12-14 |
EP0955667B1 (de) | 2003-09-03 |
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