KR19990077474A - 렌즈가이동되는rema대물렌즈,발광시스템및그작동방법 - Google Patents
렌즈가이동되는rema대물렌즈,발광시스템및그작동방법 Download PDFInfo
- Publication number
- KR19990077474A KR19990077474A KR1019990006260A KR19990006260A KR19990077474A KR 19990077474 A KR19990077474 A KR 19990077474A KR 1019990006260 A KR1019990006260 A KR 1019990006260A KR 19990006260 A KR19990006260 A KR 19990006260A KR 19990077474 A KR19990077474 A KR 19990077474A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting system
- rema
- rema objective
- objective lens
- Prior art date
Links
- 238000006073 displacement reaction Methods 0.000 title 1
- 238000011017 operating method Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000004020 luminiscence type Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 8
- 241000022563 Rema Species 0.000 claims 10
- 239000011521 glass Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70183—Zoom systems for adjusting beam diameter
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
- Microscoopes, Condenser (AREA)
Abstract
Description
Claims (14)
- 2 차 광원 (1) 이 레티클 (33) 상에 이미지화되는, 마이크로리소그래픽 투사 노광 장치용 발광 시스템에 있어서, 이미지의 왜곡이 광학 소자 (15, 16; 17, 18) 사이의 적어도 하나의 가변 광로에 의해 세팅될 수 있는 것을 특징으로 하는 발광 시스템.
- 제 1 항에 있어서, 왜곡의 변동으로 인해 발광장치의 균일성이 특히 가장자리 쪽으로 상승하도록 변동되는 것을 특징으로 하는 발광 시스템.
- 광학 소자, 특히 렌즈를 포함하는 REMA 대물렌즈에 있어서, 2 개의 광학 소자 (15, 16; 17, 18) 사이의 광로가 특히 이동에 의해 조정될 수 있는 것을 특징으로 하는 REMA 대물렌즈.
- 제 1 항 또는 2 항에 있어서, 광학 소자 (71, 72) 의 조정, 변동 또는 교체에 의해 발광장치의 개구가 형태 및/또는 크기면에서 변동될 수 있는 것을 특징으로 하는 발광 시스템.
- 제 4 항에 있어서, 왜곡이 2 개의 소자 (15, 16; 17, 18) 사이의 광로 조정에 의해 개구에 따라 세팅가능한 것을 특징으로 하는 발광 시스템.
- 제 1 항, 2 항, 4 항 또는 5 항에 있어서, 발광 시스템이 REMA 대물렌즈 (123) 를 포함하고, 상기 REMA 대물렌즈 (123) 내에서 왜곡을 결정하는, 광학 소자 (15, 16; 17, 18) 사이의 가변 광로가 주어지는 것을 특징으로 하는 발광 시스템.
- 제 6 항에 있어서, REMA 대물렌즈 (123) 에서 2 개의 광학 소자 (2, 3; 4, 5) 사이의 적어도 하나의 제 2 광로가 가변되는 것을 특징으로 하는 발광 시스템.
- 제 6 항에 있어서, REMA 대물렌즈 (123) 의 물체 간격 (1-2) 이 가변되는 것을 특징으로 하는 발광 시스템.
- 제 1 항, 2 항 및 4 항 내지 8 항 중 어느 한 항에 있어서, 발광 시스템이 슬릿형 발광 횡단면을 가진 웨이퍼 스캐너의 발광 시스템으로 형성되는 것을 특징으로 하는 발광 시스템.
- 제 1 항, 2 항 및 4 항 내지 9 항 중 어느 한 항에 있어서, 부가적으로 그레이값 눈금 필터 (21) 가 제공되는 것을 특징으로 하는 발광 시스템.
- 마이크로리소그래픽 투사 노광장치용 가변 개구 및 REMA 대물렌즈 (123) 를 가진 발광 시스템의 작동 방법에 있어서, REMA 대물렌즈 (123) 의 2개의 광학 소자 (15, 16; 17, 18) 사이의 적어도 하나의 광로가 발광 시스템의 개구에 따라 변동되는 것을 특징으로 하는 발광 시스템의 작동 방법.
- 제 11 항에 있어서, 광로의 변동에 의해 웨이퍼 (500) 에서 발광의 균일성이 증가되는 것을 특징으로 하는 방법.
- 제 11 항 또는 12 항에 있어서, 광로가 광학 소자 (15, 16) 의 이동에 의해 변동되는 것을 특징으로 하는 방법.
- 제 11 항 내지 13 항 중 어느 한 항에 있어서, REMA 대물렌즈 (123) 내의 적어도 하나의 제 2 광로 또는 REMA 대물렌즈 (123) 의 물체 간격이 조정되는 것을 특징으로 하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19809395 | 1998-03-05 | ||
DE19809395A DE19809395A1 (de) | 1998-03-05 | 1998-03-05 | Beleuchtungssystem und REMA-Objektiv mit Linsenverschiebung und Betriebsverfahren dafür |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990077474A true KR19990077474A (ko) | 1999-10-25 |
KR100632812B1 KR100632812B1 (ko) | 2006-10-11 |
Family
ID=7859786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990006260A KR100632812B1 (ko) | 1998-03-05 | 1999-02-25 | 렌즈가 이동되는 rema 대물렌즈, 조명 시스템 및 그 작동 프로세스 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6295122B1 (ko) |
EP (1) | EP0940722A3 (ko) |
JP (1) | JPH11329963A (ko) |
KR (1) | KR100632812B1 (ko) |
DE (1) | DE19809395A1 (ko) |
TW (1) | TW409198B (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6833904B1 (en) | 1998-02-27 | 2004-12-21 | Nikon Corporation | Exposure apparatus and method of fabricating a micro-device using the exposure apparatus |
JP4238390B2 (ja) * | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
TWI283798B (en) * | 2000-01-20 | 2007-07-11 | Asml Netherlands Bv | A microlithography projection apparatus |
DE10010131A1 (de) * | 2000-03-03 | 2001-09-06 | Zeiss Carl | Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion |
US6717651B2 (en) | 2000-04-12 | 2004-04-06 | Nikon Corporation | Exposure apparatus, method for manufacturing thereof and method for manufacturing microdevice |
DE10029852A1 (de) * | 2000-06-16 | 2001-12-20 | Sick Ag | Objekterkennung |
TW498408B (en) * | 2000-07-05 | 2002-08-11 | Asm Lithography Bv | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
JP2002055277A (ja) | 2000-08-11 | 2002-02-20 | Nikon Corp | リレー結像光学系、および該光学系を備えた照明光学装置並びに露光装置 |
JP2002231619A (ja) * | 2000-11-29 | 2002-08-16 | Nikon Corp | 照明光学装置および該照明光学装置を備えた露光装置 |
JP3826047B2 (ja) * | 2002-02-13 | 2006-09-27 | キヤノン株式会社 | 露光装置、露光方法、及びそれを用いたデバイス製造方法 |
JP4332331B2 (ja) * | 2002-08-05 | 2009-09-16 | キヤノン株式会社 | 露光方法 |
DE10329793A1 (de) * | 2003-07-01 | 2005-01-27 | Carl Zeiss Smt Ag | Projektionsobjektiv für eine mikrolithographische Projektionsbelichtungsanlage |
WO2005026843A2 (en) * | 2003-09-12 | 2005-03-24 | Carl Zeiss Smt Ag | Illumination system for a microlithography projection exposure installation |
JP4455129B2 (ja) * | 2004-04-06 | 2010-04-21 | キヤノン株式会社 | 収差計測方法及びそれを用いた投影露光装置 |
JP4599936B2 (ja) * | 2004-08-17 | 2010-12-15 | 株式会社ニコン | 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法 |
DE102008007449A1 (de) | 2008-02-01 | 2009-08-13 | Carl Zeiss Smt Ag | Beleuchtungsoptik zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage für die Mikrolithographie |
CN107144947B (zh) * | 2017-06-26 | 2019-11-26 | 吉林工程技术师范学院 | 非球面变焦系统及照明光学系统 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851882A (en) * | 1985-12-06 | 1989-07-25 | Canon Kabushiki Kaisha | Illumination optical system |
JPS6461716A (en) * | 1987-08-31 | 1989-03-08 | Canon Kk | Illuminator |
JP3282167B2 (ja) * | 1993-02-01 | 2002-05-13 | 株式会社ニコン | 露光方法、走査型露光装置、及びデバイス製造方法 |
JPH0737798A (ja) * | 1993-07-20 | 1995-02-07 | Nippon Telegr & Teleph Corp <Ntt> | 投影露光装置 |
EP0687956B2 (de) * | 1994-06-17 | 2005-11-23 | Carl Zeiss SMT AG | Beleuchtungseinrichtung |
JP2705609B2 (ja) * | 1995-02-21 | 1998-01-28 | 日本電気株式会社 | 露光装置および露光方法 |
US5739899A (en) * | 1995-05-19 | 1998-04-14 | Nikon Corporation | Projection exposure apparatus correcting tilt of telecentricity |
JPH08316123A (ja) * | 1995-05-19 | 1996-11-29 | Nikon Corp | 投影露光装置 |
DE19548805A1 (de) * | 1995-12-27 | 1997-07-03 | Zeiss Carl Fa | REMA-Objektiv für Mikrolithographie-Projektionsbelichtungsanlagen |
KR100472866B1 (ko) * | 1996-02-23 | 2005-10-06 | 에이에스엠엘 네델란즈 비.브이. | 광학적장치용조명유닛 |
JPH09325275A (ja) * | 1996-06-04 | 1997-12-16 | Canon Inc | 照明装置及びそれを用いた投影露光装置 |
JP2891219B2 (ja) * | 1996-12-20 | 1999-05-17 | キヤノン株式会社 | 露光装置及びそれを用いた素子製造方法 |
-
1998
- 1998-03-05 DE DE19809395A patent/DE19809395A1/de not_active Withdrawn
-
1999
- 1999-02-05 EP EP99102271A patent/EP0940722A3/de not_active Ceased
- 1999-02-25 KR KR1019990006260A patent/KR100632812B1/ko not_active IP Right Cessation
- 1999-03-04 TW TW088103276A patent/TW409198B/zh not_active IP Right Cessation
- 1999-03-05 JP JP11058033A patent/JPH11329963A/ja active Pending
- 1999-03-05 US US09/264,137 patent/US6295122B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100632812B1 (ko) | 2006-10-11 |
US6295122B1 (en) | 2001-09-25 |
TW409198B (en) | 2000-10-21 |
JPH11329963A (ja) | 1999-11-30 |
EP0940722A2 (de) | 1999-09-08 |
DE19809395A1 (de) | 1999-09-09 |
EP0940722A3 (de) | 2001-06-20 |
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