KR19990071863A - 저 저항 접촉 반도체 다이오드 - Google Patents
저 저항 접촉 반도체 다이오드 Download PDFInfo
- Publication number
- KR19990071863A KR19990071863A KR1019980704147A KR19980704147A KR19990071863A KR 19990071863 A KR19990071863 A KR 19990071863A KR 1019980704147 A KR1019980704147 A KR 1019980704147A KR 19980704147 A KR19980704147 A KR 19980704147A KR 19990071863 A KR19990071863 A KR 19990071863A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- type material
- highly doped
- contact
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 54
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 51
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9524414.1A GB9524414D0 (en) | 1995-11-29 | 1995-11-29 | Low resistance contact semiconductor device |
| GB9524414.1 | 1995-11-29 | ||
| PCT/GB1996/002914 WO1997020353A1 (en) | 1995-11-29 | 1996-11-27 | Low resistance contact semiconductor diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19990071863A true KR19990071863A (ko) | 1999-09-27 |
Family
ID=10784642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980704147A Abandoned KR19990071863A (ko) | 1995-11-29 | 1996-11-27 | 저 저항 접촉 반도체 다이오드 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US6133590A (https=) |
| EP (1) | EP0864180B1 (https=) |
| JP (1) | JP2000501238A (https=) |
| KR (1) | KR19990071863A (https=) |
| AU (1) | AU721907B2 (https=) |
| CA (1) | CA2238952C (https=) |
| DE (1) | DE69632961T2 (https=) |
| GB (2) | GB9524414D0 (https=) |
| RU (1) | RU2166222C2 (https=) |
| WO (1) | WO1997020353A1 (https=) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2011531A6 (es) * | 1987-12-10 | 1990-01-16 | Poyer Michael | Dispositivo de seguridad para aparatos grabadores o reproductores de cassettes de video. |
| DE19703612A1 (de) * | 1997-01-31 | 1998-08-06 | Siemens Ag | Halbleiterlaser-Bauelement |
| US5936266A (en) * | 1997-07-22 | 1999-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources |
| GB0012925D0 (en) | 2000-05-30 | 2000-07-19 | Secr Defence | Bipolar transistor |
| DE10057698A1 (de) * | 2000-11-21 | 2002-06-06 | Osram Opto Semiconductors Gmbh | Übereinander gestapelte Halbleiter-Diodenlaser |
| US6905900B1 (en) | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
| US7065124B2 (en) | 2000-11-28 | 2006-06-20 | Finlsar Corporation | Electron affinity engineered VCSELs |
| GB0030204D0 (en) * | 2000-12-12 | 2001-01-24 | Secr Defence | Reduced noise semiconductor photodetector |
| RU2200358C1 (ru) * | 2001-06-05 | 2003-03-10 | Хан Владимир Александрович | Полупроводниковый излучающий диод |
| JP2003086898A (ja) * | 2001-09-07 | 2003-03-20 | Nec Corp | 窒化ガリウム系半導体レーザ |
| US6965626B2 (en) | 2002-09-03 | 2005-11-15 | Finisar Corporation | Single mode VCSEL |
| US6813293B2 (en) | 2002-11-21 | 2004-11-02 | Finisar Corporation | Long wavelength VCSEL with tunnel junction, and implant |
| US7170097B2 (en) * | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
| US7298942B2 (en) | 2003-06-06 | 2007-11-20 | Finisar Corporation | Pluggable optical optic system having a lens fiber stop |
| US7433381B2 (en) | 2003-06-25 | 2008-10-07 | Finisar Corporation | InP based long wavelength VCSEL |
| US7560750B2 (en) * | 2003-06-26 | 2009-07-14 | Kyocera Corporation | Solar cell device |
| US7075962B2 (en) | 2003-06-27 | 2006-07-11 | Finisar Corporation | VCSEL having thermal management |
| US7054345B2 (en) | 2003-06-27 | 2006-05-30 | Finisar Corporation | Enhanced lateral oxidation |
| US7277461B2 (en) | 2003-06-27 | 2007-10-02 | Finisar Corporation | Dielectric VCSEL gain guide |
| US7149383B2 (en) | 2003-06-30 | 2006-12-12 | Finisar Corporation | Optical system with reduced back reflection |
| US6961489B2 (en) | 2003-06-30 | 2005-11-01 | Finisar Corporation | High speed optical system |
| US7210857B2 (en) | 2003-07-16 | 2007-05-01 | Finisar Corporation | Optical coupling system |
| US6887801B2 (en) | 2003-07-18 | 2005-05-03 | Finisar Corporation | Edge bead control method and apparatus |
| US7019330B2 (en) * | 2003-08-28 | 2006-03-28 | Lumileds Lighting U.S., Llc | Resonant cavity light emitting device |
| US7031363B2 (en) | 2003-10-29 | 2006-04-18 | Finisar Corporation | Long wavelength VCSEL device processing |
| DE102004047313B3 (de) * | 2004-09-29 | 2006-03-30 | Siced Electronics Development Gmbh & Co. Kg | Halbleiteranordnung mit einem Tunnelkontakt und Verfahren zu deren Herstellung |
| US7274040B2 (en) * | 2004-10-06 | 2007-09-25 | Philips Lumileds Lighting Company, Llc | Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
| JP2006313773A (ja) * | 2005-05-06 | 2006-11-16 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| US7535034B2 (en) | 2006-02-27 | 2009-05-19 | The Board Of Trustees Of The University Of Illinois | PNP light emitting transistor and method |
| US7813396B2 (en) | 2007-10-12 | 2010-10-12 | The Board Of Trustees Of The University Of Illinois | Transistor laser devices and methods |
| WO2009051664A2 (en) | 2007-10-12 | 2009-04-23 | The Board Of Trustees Of The University Of Illinois | Light emitting and lasing semiconductor devices and methods |
| TWI427824B (zh) * | 2008-03-14 | 2014-02-21 | 旭化成電子材料元件股份有限公司 | 紅外線發光元件 |
| JP5093063B2 (ja) | 2008-11-11 | 2012-12-05 | 住友電気工業株式会社 | 集積化半導体光素子及び半導体光装置 |
| TWI407575B (zh) | 2009-05-12 | 2013-09-01 | 國立大學法人筑波大學 | A semiconductor device, a method for manufacturing the same, and a solar battery |
| GB201000756D0 (en) | 2010-01-18 | 2010-03-03 | Gas Sensing Solutions Ltd | Gas sensor with radiation guide |
| GB201018417D0 (en) | 2010-11-01 | 2010-12-15 | Gas Sensing Solutions Ltd | Apparatus and method for generating light pulses from LEDs in optical absorption gas sensors |
| GB201018418D0 (en) | 2010-11-01 | 2010-12-15 | Gas Sensing Solutions Ltd | Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated |
| JP7355740B2 (ja) * | 2018-08-24 | 2023-10-03 | ソニーセミコンダクタソリューションズ株式会社 | 発光素子 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2614135B1 (fr) * | 1987-04-14 | 1989-06-30 | Telecommunications Sa | Photodiode hgcdte a reponse rapide |
| GB9100351D0 (en) * | 1991-01-08 | 1991-02-20 | Secr Defence | Semiconductor heterostructure device |
| US5166761A (en) * | 1991-04-01 | 1992-11-24 | Midwest Research Institute | Tunnel junction multiple wavelength light-emitting diodes |
| US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
| US5892784A (en) * | 1994-10-27 | 1999-04-06 | Hewlett-Packard Company | N-drive p-common surface emitting laser fabricated on n+ substrate |
-
1995
- 1995-11-29 GB GBGB9524414.1A patent/GB9524414D0/en active Pending
-
1996
- 1996-11-27 WO PCT/GB1996/002914 patent/WO1997020353A1/en not_active Ceased
- 1996-11-27 DE DE69632961T patent/DE69632961T2/de not_active Expired - Lifetime
- 1996-11-27 RU RU98112013/28A patent/RU2166222C2/ru active
- 1996-11-27 US US09/068,943 patent/US6133590A/en not_active Expired - Lifetime
- 1996-11-27 KR KR1019980704147A patent/KR19990071863A/ko not_active Abandoned
- 1996-11-27 JP JP9520270A patent/JP2000501238A/ja active Pending
- 1996-11-27 EP EP96939228A patent/EP0864180B1/en not_active Expired - Lifetime
- 1996-11-27 CA CA002238952A patent/CA2238952C/en not_active Expired - Lifetime
- 1996-11-27 GB GB9810627A patent/GB2321783B/en not_active Expired - Fee Related
- 1996-11-27 AU AU76360/96A patent/AU721907B2/en not_active Expired
-
2000
- 2000-08-11 US US09/636,741 patent/US6455879B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0864180B1 (en) | 2004-07-21 |
| WO1997020353A1 (en) | 1997-06-05 |
| US6455879B1 (en) | 2002-09-24 |
| AU721907B2 (en) | 2000-07-20 |
| DE69632961D1 (de) | 2004-08-26 |
| CA2238952A1 (en) | 1997-06-05 |
| JP2000501238A (ja) | 2000-02-02 |
| RU2166222C2 (ru) | 2001-04-27 |
| EP0864180A1 (en) | 1998-09-16 |
| GB9524414D0 (en) | 1996-01-31 |
| DE69632961T2 (de) | 2005-08-25 |
| CA2238952C (en) | 2004-05-25 |
| GB2321783A (en) | 1998-08-05 |
| GB9810627D0 (en) | 1998-07-15 |
| GB2321783B (en) | 2000-10-18 |
| AU7636096A (en) | 1997-06-19 |
| US6133590A (en) | 2000-10-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 19980529 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20011127 Comment text: Request for Examination of Application |
|
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
Patent event date: 20020416 Comment text: Notification of Change of Applicant Patent event code: PN23011R01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20040129 |
|
| NORF | Unpaid initial registration fee | ||
| PC1904 | Unpaid initial registration fee |