KR19990063359A - 접합 패드를 가진 이중 다마스크식 공정 - Google Patents

접합 패드를 가진 이중 다마스크식 공정 Download PDF

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Publication number
KR19990063359A
KR19990063359A KR1019980057481A KR19980057481A KR19990063359A KR 19990063359 A KR19990063359 A KR 19990063359A KR 1019980057481 A KR1019980057481 A KR 1019980057481A KR 19980057481 A KR19980057481 A KR 19980057481A KR 19990063359 A KR19990063359 A KR 19990063359A
Authority
KR
South Korea
Prior art keywords
layer
via hole
insulator layer
etching
bond pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019980057481A
Other languages
English (en)
Korean (ko)
Inventor
라이너 플로리안 슈나벨
시안 제이 닝
브루노 스풀러
Original Assignee
피터 토마스
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 피터 토마스, 지멘스 악티엔게젤샤프트 filed Critical 피터 토마스
Publication of KR19990063359A publication Critical patent/KR19990063359A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/088—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving partial etching of via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
KR1019980057481A 1997-12-23 1998-12-23 접합 패드를 가진 이중 다마스크식 공정 Ceased KR19990063359A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/997,682 1997-12-23
US08/997,682 US6033984A (en) 1997-12-23 1997-12-23 Dual damascene with bond pads

Publications (1)

Publication Number Publication Date
KR19990063359A true KR19990063359A (ko) 1999-07-26

Family

ID=25544264

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980057481A Ceased KR19990063359A (ko) 1997-12-23 1998-12-23 접합 패드를 가진 이중 다마스크식 공정

Country Status (5)

Country Link
US (1) US6033984A (https=)
EP (1) EP0926721A3 (https=)
JP (1) JPH11312704A (https=)
KR (1) KR19990063359A (https=)
TW (1) TW436930B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4651815B2 (ja) * 1998-01-23 2011-03-16 ローム株式会社 ダマシン配線および半導体装置
US6090696A (en) * 1999-10-20 2000-07-18 Taiwan Semicondutor Manufacturing Company Method to improve the adhesion of a molding compound to a semiconductor chip comprised with copper damascene structures
US6191023B1 (en) * 1999-11-18 2001-02-20 Taiwan Semiconductor Manufacturing Company Method of improving copper pad adhesion
US6838769B1 (en) 1999-12-16 2005-01-04 Agere Systems Inc. Dual damascene bond pad structure for lowering stress and allowing circuitry under pads
US6417087B1 (en) * 1999-12-16 2002-07-09 Agere Systems Guardian Corp. Process for forming a dual damascene bond pad structure over active circuitry
GB2364170B (en) * 1999-12-16 2002-06-12 Lucent Technologies Inc Dual damascene bond pad structure for lowering stress and allowing circuitry under pads and a process to form the same
US6551856B1 (en) * 2000-08-11 2003-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming copper pad redistribution and device formed
US6960496B2 (en) * 2003-04-03 2005-11-01 Taiwan Semiconductor Manufacturing Method of damascene process flow
US20060071304A1 (en) * 2004-09-29 2006-04-06 International Business Machines Corporation Structure and layout of a fet prime cell
US20060211167A1 (en) * 2005-03-18 2006-09-21 International Business Machines Corporation Methods and systems for improving microelectronic i/o current capabilities
US7425507B2 (en) * 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
US20110156260A1 (en) * 2009-12-28 2011-06-30 Yu-Hua Huang Pad structure and integrated circuit chip with such pad structure
US20120273937A1 (en) * 2011-04-30 2012-11-01 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Bump Interconnect Structure with Conductive Layer Over Buffer Layer
US8575022B2 (en) * 2011-11-28 2013-11-05 International Business Machines Corporation Top corner rounding of damascene wire for insulator crack suppression
US20250062124A1 (en) * 2023-08-18 2025-02-20 Tokyo Electron Limited Methods and structures for improving etch profile of underlying layers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2428373C2 (de) * 1974-06-12 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung
JPS5561027A (en) * 1978-10-30 1980-05-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Gas plasma etching
US5266446A (en) * 1990-11-15 1993-11-30 International Business Machines Corporation Method of making a multilayer thin film structure
US5618381A (en) * 1992-01-24 1997-04-08 Micron Technology, Inc. Multiple step method of chemical-mechanical polishing which minimizes dishing
US5773363A (en) * 1994-11-08 1998-06-30 Micron Technology, Inc. Semiconductor processing method of making electrical contact to a node
US5516710A (en) * 1994-11-10 1996-05-14 Northern Telecom Limited Method of forming a transistor
US5534462A (en) * 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5739563A (en) * 1995-03-15 1998-04-14 Kabushiki Kaisha Toshiba Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same
JP2728025B2 (ja) * 1995-04-13 1998-03-18 日本電気株式会社 半導体装置の製造方法
US5534460A (en) * 1995-04-27 1996-07-09 Vanguard International Semiconductor Corp. Optimized contact plug process
US5780337A (en) * 1996-09-23 1998-07-14 United Microelectronics Corporation Method of fabricating a bit line of a dynamic random access memory
US5877076A (en) * 1997-10-14 1999-03-02 Industrial Technology Research Institute Opposed two-layered photoresist process for dual damascene patterning

Also Published As

Publication number Publication date
EP0926721A2 (en) 1999-06-30
EP0926721A3 (en) 2001-12-19
TW436930B (en) 2001-05-28
JPH11312704A (ja) 1999-11-09
US6033984A (en) 2000-03-07

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