KR19990039159A - Pixel repair method of liquid crystal display - Google Patents
Pixel repair method of liquid crystal display Download PDFInfo
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- KR19990039159A KR19990039159A KR1019970059144A KR19970059144A KR19990039159A KR 19990039159 A KR19990039159 A KR 19990039159A KR 1019970059144 A KR1019970059144 A KR 1019970059144A KR 19970059144 A KR19970059144 A KR 19970059144A KR 19990039159 A KR19990039159 A KR 19990039159A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134336—Matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- Nonlinear Science (AREA)
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
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- Thin Film Transistor (AREA)
Abstract
본 발명은 액정 표시 장치의 수리 방법에 관한 것으로서, 이물질로 인하여 서로 이웃하는 게이트선이 쇼트되면 상기 게이트선과 연결되어 있는 분지 및 유지 용량용 전극을 오픈시켜 이물질로부터 게이트선을 분리하여 쇼트된 게이트선들을 분리한다.The present invention relates to a repairing method of a liquid crystal display device. When a gate line adjacent to each other is shorted due to a foreign material, the gate lines shorted by separating the gate line from the foreign material by opening a branching and holding capacitor electrode connected to the gate line. To separate.
Description
본 발명은 액정 표시 장치의 화소 수리 방법에 관한 것이다.The present invention relates to a pixel repair method of a liquid crystal display device.
현대사회가 정보화되어감에 따라 정보 표시 장치로서 경박단소, 저소비전력의 장점을 갖춘 박막 트랜지스터 액정 표시 장치가 부각되고 있다.As the modern society becomes more information, a thin film transistor liquid crystal display device having the advantages of light and small and low power consumption as an information display device is emerging.
일반적으로 박막 트랜지스터 액정 표시 장치를 제조하는 공정에서 공정 수율을 감소시키는 불량의 원인으로 여러 가지를 들 수 있겠지만 데이터 구동 집적회로의 출력 단자로부터 각각의 박막 트랜지스터의 소스 단자로 연결되는 데이터 배선의 단선 결함(open defect)은 수율을 감소시키는 원인이 될 뿐아니라 리페어를 하기 위해서는 많은 비용이 투입된다.In general, there may be various causes of defects in reducing the process yield in the process of manufacturing a thin film transistor liquid crystal display device. (open defects) not only reduce the yield, but also cost a lot of money to repair.
구체적으로 리페어를 하기 위해서는 여러 가지 방법이 있지만, 기판에서 표시 영역이 되는 활성 영역의 바깥쪽에 각각의 데이터 및 게이트 배선과 교차하는 리던던시(redundancy) 배선을 형성하여 각각의 데이터 및 게이트 배선에서 오픈이 발생할 경우에 리던던시 배선을 이용하여 활성 영역의 바깥쪽으로 우회하여 신호를 전달하는 방법이 있다.Specifically, there are various methods for repairing, but redundancy wiring crossing each data and gate wiring is formed on the outside of the active region serving as the display area on the substrate, so that opening occurs in each data and gate wiring. In this case, there is a method of transmitting a signal by bypassing the outside of the active region using redundancy wiring.
일반적으로 앞에서 설명한 리던던시 배선을 리페어링이라고 한다.In general, the redundancy wiring described above is called repairing.
그리고 다른 방법으로는 각각의 화소 영역에 데이터선의 이웃하는 부분에 형성된 리페어바를 이용하여 화소 영역의 내부에서 단선 결함이 발생한 부분만을 우회하여 신호를 전달하는 방법이 있다.As another method, a signal is transmitted by bypassing only a portion where a disconnection defect has occurred inside the pixel area by using a repair bar formed in a neighboring portion of the data line in each pixel area.
또한, 서로 인접한 게이트선이 잔류하는 이물질에 의해 쇼트(short)되는 경우에 레이저를 이용하여 이들을 분리하는 방법도 있다.In addition, there is also a method of separating them using a laser when the gate lines adjacent to each other are shorted by foreign matter remaining.
그러면, 첨부한 도면을 참고로 하여 종래의 기술에 따른 액정 표시 장치를 수리하는 방법에 대하여 더욱 자세하게 알아보면 다음과 같다.Next, a method of repairing a liquid crystal display according to the related art will be described in detail with reference to the accompanying drawings.
도 1은 종래의 기술에 따른 액정 표시 장치의 수리 방법을 도시한 평면도이다.1 is a plan view illustrating a repairing method of a liquid crystal display according to the related art.
도 1에서 보는 바와 같이, 가로 방향으로 게이트선(3)이 형성되어 있으며, 세로 방향으로 데이터선(5)이 형성되어 있다. 데이터선(5)과 평행하게 형성된 게이트선(3)의 분지(31)를 통하여 게이트선(3)과 연결되어 있는 유지 용량용 전극(32)이 게이트선(3)과 평행하게 형성되어 있다. 그리고 일단은 유지 용량용 전극(32)과 연결되어 있고 타측은 데이터선(5)과 중첩되어 있으며, 데이터선(5)에 인접한 부분에 데이터선(5)과 평행하게 리페어바(34)가 형성되어 있다. 게이트선(3)과 데이터선(5)이 교차하는 부분에는 게이트선(3)의 일부인 게이트 전극(33), 데이터선(5)의 일부인 드레인 전극(51) 및 소스 전극(52)으로 이루어진 박막 트랜지스터(TFT)가 형성되어 있다. 여기서 박막 트랜지스터(TFT)의 소스 전극(52)은 이웃하는 화소 영역(P)에 형성되어 있는 화소 전극(17)과 연결되어 있다. 또한, 박막 트랜지스터(TFT)의 반도체층(130)은 상부로는 데이터선(5)과 유지 용량용 전극(32)이 교차하는 부분에서 하부로는 데이터선(5)과 리페어바(34)가 중첩되는 부분까지, 그리고 소스 전극(52)에 대응하는 부분에 형성되어 있다.As shown in FIG. 1, the gate line 3 is formed in the horizontal direction, and the data line 5 is formed in the vertical direction. A storage capacitor electrode 32 connected to the gate line 3 is formed in parallel with the gate line 3 through a branch 31 of the gate line 3 formed in parallel with the data line 5. One end is connected to the storage capacitor electrode 32 and the other side overlaps the data line 5, and a repair bar 34 is formed in a portion adjacent to the data line 5 in parallel with the data line 5. It is. A thin film made of a gate electrode 33 which is a part of the gate line 3, a drain electrode 51 which is a part of the data line 5, and a source electrode 52 at a portion where the gate line 3 and the data line 5 intersect. The transistor TFT is formed. Here, the source electrode 52 of the thin film transistor TFT is connected to the pixel electrode 17 formed in the neighboring pixel region P. In the semiconductor layer 130 of the thin film transistor TFT, the data line 5 and the repair bar 34 are disposed at a portion where the data line 5 and the storage capacitor electrode 32 cross each other. It is formed in the part corresponding to the source electrode 52 to the part which overlaps.
이러한 종래의 액정 표시 장치에서 잔류하는 이물질(A)에 의해 두 게이트선(3)이 쇼트되는 경우에는 서로 인접한 게이트선(3)을 사이를 레이저(laser)를 이용하여 오픈(open)부(a)를 형성하여 두 개의 게이트선(3)을 분리한다.When the two gate lines 3 are shorted by the foreign matter A remaining in the conventional liquid crystal display, the open portion a is formed by using a laser between the adjacent gate lines 3. ) To separate the two gate lines (3).
그러나 이러한 종래의 액정 표시 장치의 수리 방법에서는 작은 모양으로 이물질이 형성되어 수리하는 것은 가능하지만 잔류하는 이물질이 크게 형성되는 경우에는 레이저에 의한 손상이 심하게 발생하여 기생 불량이 유발되어 제품이 거절되는 가능성이 있으며, 이로 인하여 공정 수율이 떨어지게 된다.However, in the conventional method of repairing a liquid crystal display device, it is possible to repair by forming a foreign material in a small shape, but when the remaining foreign material is formed large, the possibility of product rejection due to severe damage caused by a laser is caused by the laser. Thereby, the process yield is lowered.
본 발명은 이러한 문제점을 해결하기 위한 것으로서, 잔류하는 이물질에 의한 게이트선의 쇼트를 안전하게 분리하는 수리 방법을 제공하는 데 있다.The present invention is to solve such a problem, and to provide a repair method for safely separating the short of the gate line by the remaining foreign matter.
도 1은 종래의 기술에 따른 액정 표시 장치의 수리 방법을 도시한 평면도이고,1 is a plan view illustrating a method of repairing a liquid crystal display according to a related art.
도 2는 본 발명의 실시예에 따른 액정 표시 장치의 수리 방법을 도시한 평면도이고,2 is a plan view illustrating a repairing method of a liquid crystal display according to an exemplary embodiment of the present invention.
이러한 본 발명에 따른 액정 표시 장치의 수리 방법에서는 이물질이 증착되어 서로 쇼트되어 있는 게이트선들 중에 택일적으로 게이트선을 이물질로 인한 쇼트로부터 레이저를 이용하여 분리한다.In the repairing method of the liquid crystal display according to the present invention, among the gate lines in which foreign matters are deposited and shorted, the gate lines are alternatively separated from the short caused by the foreign matter using a laser.
이러한 본 발명에 따른 액정 표시 장치에서 서로 인접한 게이트선들이 이물질로 인하여 쇼트되면, 게이트선, 게이트선의 분지 또는 유지 용량용 전극을 오픈시켜 택일적으로 하나의 게이트선을 분리시킨다.In the liquid crystal display according to the present invention, when the gate lines adjacent to each other are shorted due to the foreign matter, the gate line, the branch of the gate line, or the electrode for the storage capacitor are opened to separate one gate line.
그러면 첨부한 도면을 참고로 하여 본 발명에 따른 액정 표시 장치의 수리 방법의 실시예를 본 발명이 속하는 기술 분야에서 통상의 기술을 가진 자가 용이하게 실시할 수 있을 정도로 상세히 설명한다.An embodiment of a repairing method of a liquid crystal display according to the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily practice the present invention.
도 2는 본 발명의 실시예에 따른 액정 표시 장치의 수리 방법을 도시한 평면도이다.2 is a plan view illustrating a repairing method of a liquid crystal display according to an exemplary embodiment of the present invention.
도 2는 보는 바와 같이, 도 1의 구조와 동일하게 가로 방향으로 게이트선(3)이 형성되어 있으며, 세로 방향으로 데이터선(5)이 형성되어 있다. 데이터선(5)과 평행하게 형성된 게이트선(3)의 분지(31)를 통하여 게이트선(3)과 연결되어 있는 유지 용량용 전극(32)이 게이트선(3)과 평행하게 형성되어 있다. 그리고 일단은 유지 용량용 전극(32)과 연결되어 있고 타측은 데이터선(5)과 중첩되어 있으며, 데이터선(5)에 인접한 부분에 데이터선(5)과 평행하게 리페어바(34)가 형성되어 있다. 게이트선(3)과 데이터선(5)이 교차하는 부분에는 게이트선(33)의 일부인 게이트 전극(33), 데이터선(5)의 일부인 드레인 전극(51) 및 소스 전극(52)으로 이루어진 박막 트랜지스터(TFT)가 형성되어 있다. 여기서 박막 트랜지스터(TFT)의 소스 전극(52)은 이웃하는 화소 영역(P)에 형성되어 있는 화소 전극(17)과 연결되어 있다. 또한, 박막 트랜지스터(TFT)의 반도체층(130)은 상부로는 데이터선(5)과 유지 용량용 전극(32)이 교차하는 부분에서 하부로는 데이터선(5)과 리페어바(34)가 중첩되는 부부까지, 그리고 소스 전극(52)에 대응하는 부분에 형성되어 있다.As shown in FIG. 2, the gate line 3 is formed in the horizontal direction in the same manner as in the structure of FIG. 1, and the data line 5 is formed in the vertical direction. A storage capacitor electrode 32 connected to the gate line 3 is formed in parallel with the gate line 3 through a branch 31 of the gate line 3 formed in parallel with the data line 5. One end is connected to the storage capacitor electrode 32 and the other side overlaps the data line 5, and a repair bar 34 is formed in a portion adjacent to the data line 5 in parallel with the data line 5. It is. A thin film formed of a gate electrode 33 which is a part of the gate line 33, a drain electrode 51 which is a part of the data line 5, and a source electrode 52 at a portion where the gate line 3 and the data line 5 cross each other. The transistor TFT is formed. Here, the source electrode 52 of the thin film transistor TFT is connected to the pixel electrode 17 formed in the neighboring pixel region P. In the semiconductor layer 130 of the thin film transistor TFT, the data line 5 and the repair bar 34 are disposed at a portion where the data line 5 and the storage capacitor electrode 32 cross each other. It is formed in the part corresponding to the source electrode 52 until the couple which overlaps.
본 발명의 실시예에 따른 액정 표시 장치의 화소를 수리하는 방법을 상세하게 설명하면 다음과 같다.Hereinafter, a method of repairing a pixel of a liquid crystal display according to an exemplary embodiment of the present invention will be described in detail.
도 2에서와 같이 종래와 동일하게 이물질(A)로 인하여 서로 인접한 게이트선(3)들이 쇼트되면, 레이저를 이용하여 데이터선(5)과 평행하게 형성되어 있는 게이트선(3)의 분지(31)와 게이트선(3)과 평행하게 형성되어 있으며 유지 용량용 전극(32)을 세 부분의 오픈부(a, b, c)를 형성하여 하나의 게이트선(3)을 이물질(A)로부터 오픈시킨다.As shown in FIG. 2, when the gate lines 3 adjacent to each other are shorted due to the foreign matter A as in the related art, the branch 31 of the gate line 3 formed in parallel with the data line 5 by using a laser. ) And the gate electrode 3 are formed in parallel with each other, and the storage capacitor electrode 32 is formed with three open portions a, b, and c so that one gate line 3 is opened from the foreign matter A. Let's do it.
택일적으로 하나의 게이트선(3)을 이물질(A)로 인한 쇼트로부터 분리하면, 두 개의 게이트선(3)은 오픈된 상태가 된다.Alternatively, if one gate line 3 is separated from the short caused by the foreign matter A, the two gate lines 3 are left open.
따라서 본 발명에 따른 액정 표시 장치의 수리 방법에서는 레이저로 인한 손상을 최소화하여 기생적으로 발생하는 불량을 제거할 수 있다.Accordingly, in the repairing method of the liquid crystal display according to the present invention, parasitic defects can be eliminated by minimizing damage caused by laser.
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KR100885839B1 (en) * | 2001-12-29 | 2009-02-27 | 엘지디스플레이 주식회사 | Liquid crystal display |
KR101415788B1 (en) * | 2008-07-21 | 2014-07-04 | 삼성디스플레이 주식회사 | Repair Method for Repairing Line Defect of Organic Light Emitting Display Device |
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CN106802523B (en) * | 2017-01-25 | 2019-10-29 | 星源电子科技(深圳)有限公司 | Repair the dominant horizontal linear undesirable method of liquid crystal display panel |
KR20220083910A (en) | 2020-12-11 | 2022-06-21 | 삼성디스플레이 주식회사 | Display device |
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KR970009047B1 (en) * | 1993-07-22 | 1997-06-03 | 삼성전자 주식회사 | Display elements with repair function |
US6049369A (en) * | 1995-09-11 | 2000-04-11 | Hitachi, Ltd. | Parallel-field TFT LCD having reference electrodes and a conductive layer |
KR0182051B1 (en) * | 1995-12-28 | 1999-05-01 | 김광호 | Matrix type display device having repair structure repairable by pixel unit |
JP3031664B2 (en) * | 1996-02-19 | 2000-04-10 | 株式会社アドバンスト・ディスプレイ | TFT array substrate and liquid crystal display device using the same |
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KR100885839B1 (en) * | 2001-12-29 | 2009-02-27 | 엘지디스플레이 주식회사 | Liquid crystal display |
KR101415788B1 (en) * | 2008-07-21 | 2014-07-04 | 삼성디스플레이 주식회사 | Repair Method for Repairing Line Defect of Organic Light Emitting Display Device |
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